Untitled
Abstract: No abstract text available
Text: AM072MX-CU-R High Power GaAs Power FET August 2007 Rev. 7 DESCRIPTION AM072MX-CU-R is a GaAs MESFET in high-power ceramic CU package . This part has a total gate width of 7.2mm. The AM072MX-CU-R is designed for high power microwave applications, operating up to 6 GHz. The CU
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AM072MX-CU-R
AM072MX-CU-R
34dBm
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AM300MX-CU
Abstract: No abstract text available
Text: AM300MX-CU High Power GaAs Power FET January 2003 Rev. 0 DESCRIPTION AMCOM’s AM300MX-CU is part of the CU series of GaAs MESFETs. This part has a total gate width of 30mm. The AM300MX-CU is designed for high power microwave applications, operating up to 6 GHz. The CU
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AM300MX-CU
AM300MX-CU
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AM300MX-CU-R
Abstract: No abstract text available
Text: AM300MX-CU-R April 2010 Rev 4 High Power GaAs Power FET DESCRIPTION AMCOM’s AM300MX-CU-R is part of the CU series of GaAs MESFETs. This part has a total gate width of 30mm. The AM300MX-CU-R is designed for high power microwave applications, operating up to 6GHz. The CU
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AM300MX-CU-R
AM300MX-CU-R
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Untitled
Abstract: No abstract text available
Text: AM300MX-CU-R High Power GaAs Power FET August 2007 Rev. 3 DESCRIPTION AMCOM’s AM300MX-CU-R is part of the CU series of GaAs MESFETs. This part has a total gate width of 30mm. The AM300MX-CU-R is designed for high power microwave applications, operating up to 6 GHz. The CU
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AM300MX-CU-R
AM300MX-CU-R
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AM072MX-CU-R
Abstract: No abstract text available
Text: AM072MX-CU-R April 2010 Rev 8 High Power GaAs Power FET DESCRIPTION AM072MX-CU-R is a GaAs MESFET in high-power ceramic CU package. This part has a total gate width of 7.2mm. The AM072MX-CU-R is designed for high power microwave applications, operating up to 6GHz. The CU
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AM072MX-CU-R
AM072MX-CU-R
34dBm
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ANG-S21
Abstract: AM072MX-CU GaAs S2p
Text: AM072MX-CU High Power GaAs Power FET September 2002 Rev. 3 DESCRIPTION AMCOM’s AM072MX-CU is a part of the CU series of GaAs MESFETs. This part has a total gate width of 7.2mm. The AM072MX-CU is designed for high power microwave applications, operating up to 6 GHz. The CU
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AM072MX-CU
AM072MX-CU
34dBm
Rem-108
ANG-S21
GaAs S2p
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Untitled
Abstract: No abstract text available
Text: QWLD thermocouple arrangements Contact Size 16 Pin Insert Rotation CW 6 None 90° A = AI.; B = Ch. 2 70° A = AI.; C = Ch.; B, D = Cu. 3 45° A = AI.; B = Ch.; C = Cu. 2 90° A = Con.; B = Cu. 3 3 None A = AI.; B = Cu.; C = Ch. 3 3 None A = Con.; B, C = Cu.
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40-AA
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Untitled
Abstract: No abstract text available
Text: QWLD thermocouple arrangements Contact Size 16 Pin Insert Rotation CW 6 None 90° A = AI.; B = Ch. 2 70° A = AI.; C = Ch.; B, D = Cu. 3 45° A = AI.; B = Ch.; C = Cu. 2 90° A = Con.; B = Cu. 3 3 None A = AI.; B = Cu.; C = Ch. 3 3 None A = Con.; B, C = Cu.
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40-AA
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Reflow Soldering
Abstract: 1.5mm LED
Text: Attention Points In Handling Surface Mount Chip LEDs SML-11* Series This product was developed as a surface mount LED especially suitable for soldering. Please take care of following points when using this device. 2.SOLDERING Sn-Cu, Sn-Ag-Cu, Sn-Ag-Bi-Cu
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SML-11*
Reflow Soldering
1.5mm LED
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Untitled
Abstract: No abstract text available
Text: solution copper wire bonding technology Copper Cu Wire Bonding Copper (Cu) wire has long been used as a method of connecting a silicon die to the package terminals. With the recent increase in gold (Au) wire cost, Cu wire is an attractive way to manage overall package cost.
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40mil
55/60nm
45/40nm
28/22nm
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SMLP34
Abstract: No abstract text available
Text: Attention Points In Handling Surface Mount Chip LEDs SML-P34* Series This product was developed as a surface mount LED especially suitable for reflow soldering. Please take care of following points when using this device. 0.45 0.4 0.45 2. SOLDERING Sn-Cu, Sn-Ag-Cu, Sn-Ag-Bi-Cu
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SML-P34*
SMLP34
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Untitled
Abstract: No abstract text available
Text: SK25GH063 C- R PO S$@ 407,- %*8,23.-, -', .6.,+ Absolute Maximum Ratings Symbol Conditions IGBT T$LA CU R PO S$ E$ CU R XPO S$ E$[¥ IGBT Module SK25GH063 *'-) MWW T NW Y C- R ZW S$ PX Y MW Y ] PW T CU R XPO S$ XW a- C- R PO S$ NM Y C- R ZW S$ Pc Y E$[¥R P : E$0%&
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SK25GH063
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RE334-LF
Abstract: No abstract text available
Text: HF-Platine RE334-LF - Epoxyd FR4 1,5 mm, zweiseitig 35 µm CU durchkontaktiert - heißverzinnt (HAL-leadfree) - 32 x 53 Lötinseln 2,0 mm² - Lochraster 2,54 x 2,54 mm - Lochdurchmesser 1,0 mm - Steckverbinder 32/ 64/ 96-polig DIN 41612 Bauform C - die Bestückungsseite ist total CU-kaschiert
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RE334-LF
96-polig
RE334-LF
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Untitled
Abstract: No abstract text available
Text: SK25GD063 C- R PO S$@ 407,- %*8,23.-, -', .6.,+ Absolute Maximum Ratings Symbol Conditions IGBT T$LA CU R PO S$ E$ CU R XPO S$ E$[¥ *'-) MWW T NW Y C- R ZW S$ PX Y MW Y ] PW T CU R XPO S$ XW a- C- R PO S$ NM Y C- R ZW S$ Pc Y E$[¥R P : E$0%& T$$ R NWW T^ TFL _ PW T^
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SK25GD063
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Abstract: No abstract text available
Text: SK15GH063 C- R PO S$@ 407,- %*8,23.-, -', .6.,+ Absolute Maximum Ratings Symbol Conditions IGBT T$LA CU R PO S$ E$ CU R XPO S$ E$¥] IGBT Module SK15GH063 *'-) MWW T PW Y C- R ZW S$ X[ Y NW Y ^ PW T CU R XPO S$ XW b- C- R PO S$ PW Y C- R ZW S$ XO Y PZ Y XWW
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SK15GH063
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Untitled
Abstract: No abstract text available
Text: SK45GH063 C- R PO S$@ 407,- %*8,23.-, -', .6.,+ Absolute Maximum Ratings Symbol Conditions IGBT T$LA CU R PO S$ E$ CU R XPO S$ E$¥] *'-) MWW T YO Z C- R [W S$ NW Z XWW Z ^ PW T CU R XPO S$ XW b- C- R PO S$ Od Z C- R [W S$ N[ Z XWW Z YYW Z E$¥]R P : E$0%&
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SK45GH063
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Untitled
Abstract: No abstract text available
Text: SK45GD063 C- R PO S$@ 407,- %*8,23.-, -', .6.,+ Absolute Maximum Ratings Symbol Conditions IGBT T$LA CU R PO S$ E$ CU R XPO S$ E$¥] *'-) MWW T YO Z C- R [W S$ NW Z XWW Z ^ PW T CU R XPO S$ XW b- C- R PO S$ NM Z C- R [W S$ PY Z E$¥]R P : E$0%& T$$ R NWW T_ TFL ` PW T_
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SK45GD063
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17 01 154 2203
Abstract: No abstract text available
Text: Kontakt-Maße c o n ta c t dimensions fix Ì = 1 9 1 Kontakt-Typ pin type — ABC G H J K L M CU u— N P Q CU _ 1- R S T -c : Qi QJ Œ. OJ r-\ CU INJ e QJ C_ CU u— CU Qj Cr 53 àL CM o -H i_n r*- -f f ¥ Mit Rechte Vorbehalten/ ill rights reserved
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76//in
30//in
27/im(
50/ii
D-32339
17 01 154 2203
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CU 53
Abstract: No abstract text available
Text: Y 3, 8 5 : 00-2 ,05 board drillin gs -0,4 Mon t a g e I o c h - M i t t e l I i n i e mounting hole cente r- lin e CU H-CU _ 1- (Lochbild) CU « Ci. <Ll •Sa C . a l l e Löcher all holes CU O l l—l c; CU rv i —— 01 ± 0,1 00,05 C . CU e—
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76jL4m
50//i
CU 53
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uPD70F3025A
Abstract: 74G4
Text: IC dependence of oscillating characteristics uPD70F3025A FCR6.0MC5 - S a. [U] UIH/UIL Room Temp. Udd [U] 5 b. CU] U2H/U2L c. [MHz] d. [uS] item a~e e. C/] f. CU] g. CU] Fosc Trise Duty Ustart Uhold LLC 6.0104 60 50.9 1.81 1.68 HLC 6.01 65 51 2 1.93 CCC 6.0096
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uPD70F3025A
UPD70F3025R
74G4
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uPD784218A
Abstract: No abstract text available
Text: IC dependence of osc i11 at inq character ist ics uPD784218A Room Temp. FCR4.0MC5 - S Udd a. CU] UIH/UIL LLM 5.2 HLM 5.2 HHH 5.2 LHM 5.2 HHH 5.1 -.5 -.6 -.5 -.5 b. CU] U2H/U2L c. [MHz] CU] 5 d. [uS] e. item cfe M f. [U] g. [U] Fosc Trise Duty Ustart Uhold
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uPD784218A
uPD7842
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80028
Abstract: 9806 M50747 8B428
Text: M50747 - 1 Rf CMohm] 1 FCRB.0MC5 Ta= 20 Cdeg] o a. UIH/U1L CU] b. U2H/U2L CU] 0 Tupical «- » lilnrftt._ 5 3 5 3 U2H * U2L t- c. Fosc [/] 3 C 3 400 d. Trise EuSl 300 200 100 00 e. Duty [/] 55 50 45 40 4.5 5 Udd f. Ustart CU] Typical = I.55
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M50747
M58747
80028
9806
8B428
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Untitled
Abstract: No abstract text available
Text: 53 SPECIFICATION SHEET 6559407 RS Stock No. DRAWING - 1 -TT cu LO CU U nit : mm Bulb Type 1. Structure Bulb D iam eter 0 4Max. Length 37Max Base Type W.T. Voltage 2. Design Characteristics T l.25 100/120/220/250V Amperage 0.6mA+10% Gas Type Neon gas-filled
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37Max
100/120/220/250V
000Hrs
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Untitled
Abstract: No abstract text available
Text: CERAMIC DISC CAPACITORS SPECIAL LEAD STYLE SPECIFICATIONS TYPE CU or CJ “ CU” Type: 100V to 1KV, Class 3 Lead Length L : 5.0 ± ,8mm (.196 ± .031) Lead Space (S): 6.35 ± .8mm (.250 ± .031) for under dia max 13.0mm (.492) 9.5 ± .8mm (.375 ± .031) for over dia max 13.5mm (.531)
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