AM200MX-CU
Abstract: S21ANG 139-2 MAG 15529
Text: AM200MX-CU High Power GaAs Power FET September 2002 Rev. 3 DESCRIPTION AMCOM’s AM200MX-CU is a part of the CU series of GaAs MESFETs. This part has a total gate width of 20mm. The AM200MX-CU is designed for high power microwave applications, operating up to 6 GHz. The CU
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AM200MX-CU
AM200MX-CU
38dBm
S21ANG
139-2 MAG
15529
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Untitled
Abstract: No abstract text available
Text: AM072MX-CU-R High Power GaAs Power FET August 2007 Rev. 7 DESCRIPTION AM072MX-CU-R is a GaAs MESFET in high-power ceramic CU package . This part has a total gate width of 7.2mm. The AM072MX-CU-R is designed for high power microwave applications, operating up to 6 GHz. The CU
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AM072MX-CU-R
AM072MX-CU-R
34dBm
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AM300MX-CU
Abstract: No abstract text available
Text: AM300MX-CU High Power GaAs Power FET January 2003 Rev. 0 DESCRIPTION AMCOM’s AM300MX-CU is part of the CU series of GaAs MESFETs. This part has a total gate width of 30mm. The AM300MX-CU is designed for high power microwave applications, operating up to 6 GHz. The CU
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AM300MX-CU
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AM100MX-CU-R
Abstract: No abstract text available
Text: AM100MX-CU-R April 2010 Rev 7 High Power GaAs Power FET DESCRIPTION AMCOM’s AM100MX-CU-R is a part of the CU series of GaAs MESFETs. This part has a total gate width of 10mm. The AM100MX-CU-R is designed for high power microwave applications, operating up to 6GHz. The CU
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AM100MX-CU-R
AM100MX-CU-R
35dBm
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AM300MX-CU-R
Abstract: No abstract text available
Text: AM300MX-CU-R April 2010 Rev 4 High Power GaAs Power FET DESCRIPTION AMCOM’s AM300MX-CU-R is part of the CU series of GaAs MESFETs. This part has a total gate width of 30mm. The AM300MX-CU-R is designed for high power microwave applications, operating up to 6GHz. The CU
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AM100MX-CU
Abstract: S21ANG
Text: AM100MX-CU High Power GaAs Power FET July 2003 Rev. 2 DESCRIPTION AMCOM’s AM100MX-CU is a part of the CU series of GaAs MESFETs. This part has a total gate width of 10mm. The AM100MX-CU is designed for high power microwave applications, operating up to 6 GHz. The CU
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AM100MX-CU
AM100MX-CU
35dBm
S21ANG
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AM150MX-CU-R
Abstract: No abstract text available
Text: AM150MX-CU-R April 2010 Rev 8 High Power GaAs Power FET DESCRIPTION AMCOM’s AM150MX-CU-R is a part of the CU series of GaAs MESFETs. This part has a total gate width of 15mm. The AM150MX-CU-R is designed for high power microwave applications, operating up to 6GHz. The CU
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Untitled
Abstract: No abstract text available
Text: AM300MX-CU-R High Power GaAs Power FET August 2007 Rev. 3 DESCRIPTION AMCOM’s AM300MX-CU-R is part of the CU series of GaAs MESFETs. This part has a total gate width of 30mm. The AM300MX-CU-R is designed for high power microwave applications, operating up to 6 GHz. The CU
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AM300MX-CU-R
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AM072MX-CU-R
Abstract: No abstract text available
Text: AM072MX-CU-R April 2010 Rev 8 High Power GaAs Power FET DESCRIPTION AM072MX-CU-R is a GaAs MESFET in high-power ceramic CU package. This part has a total gate width of 7.2mm. The AM072MX-CU-R is designed for high power microwave applications, operating up to 6GHz. The CU
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AM072MX-CU-R
AM072MX-CU-R
34dBm
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S21ANG
Abstract: AM150MX-CU
Text: AM150MX-CU High Power GaAs Power FET June 2003 Rev. 4 DESCRIPTION AMCOM’s AM150MX-CU is a part of the CU series of GaAs MESFETs. This part has a total gate width of 15mm. The AM150MX-CU is designed for high power microwave applications, operating up to 6 GHz. The CU
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ANG-S21
Abstract: AM072MX-CU GaAs S2p
Text: AM072MX-CU High Power GaAs Power FET September 2002 Rev. 3 DESCRIPTION AMCOM’s AM072MX-CU is a part of the CU series of GaAs MESFETs. This part has a total gate width of 7.2mm. The AM072MX-CU is designed for high power microwave applications, operating up to 6 GHz. The CU
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AM072MX-CU
AM072MX-CU
34dBm
Rem-108
ANG-S21
GaAs S2p
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Untitled
Abstract: No abstract text available
Text: AM100MX-CU-R High Power GaAs Power FET August 2007 Rev. 5 DESCRIPTION AMCOM’s AM100MX-CU-R is a part of the CU series of GaAs MESFETs. This part has a total gate width of 10mm. The AM100MX-CU-R is designed for high power microwave applications, operating up to 6 GHz. The CU
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35dBm
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Untitled
Abstract: No abstract text available
Text: AM200MX-CU-R High Power GaAs Power FET August 2007 Rev. 6 DESCRIPTION AMCOM’s AM200MX-CU-R is a part of the CU series of GaAs MESFETs. This part has a total gate width of 20mm. The AM200MX-CU-R is designed for high power microwave applications, operating up to 6 GHz. The CU
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AM200MX-CU-R
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38dBm
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AM200MX-CU-R
Abstract: No abstract text available
Text: AM200MX-CU-R April 2010 Rev 7 High Power GaAs Power FET DESCRIPTION AMCOM’s AM200MX-CU-R is a part of the CU series of GaAs MESFETs. This part has a total gate width of 20mm. The AM200MX-CU-R is designed for high power microwave applications, operating up to 6GHz. The CU
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Untitled
Abstract: No abstract text available
Text: Ergebnisseite der Teileliste Partlist 09 12 002 3011 Male insert, Han-Brid Cu < Series Number of contacts Size of hood/housing Termination Insert material Contacts Electrical data > other series Han-Brid Cu 4-poles + PE 3A Bustermination without PCB for Housing
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k0353
Abstract: ROP101116 MP9801 rop101 ROP1011 rop10111 delamination leadframe 371P160C3
Text: TEXAS INSTRUMENTS Informational Notification of Leadframe Coating and Solder Plate Changes for PLCC Packages July 17, 1996 Abstract As part of our continuing efforts to improve the quality and reliability of lead finish on our Plastic Leaded Chip Carrier PLCC products, Texas Instruments. will convert from Cu/Ni coated to Cu/Cu
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Abstract: No abstract text available
Text: SK13GD063 C- R PO S$@ 407,- %*8,23.-, -', .6.,+ Absolute Maximum Ratings Symbol Conditions IGBT T$LA CU R PO S$ E$ CU R XPO S$ E$[¥ *'-) MWW T XY Z C- R YW S$ XN Z PW Z ] PW T CU R XPO S$ XW a- C- R PO S$ PP Z C- R YW S$ XO Z E$[¥R P : E$0%& T$$ R NWW T^ TFL _ PW T^
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Untitled
Abstract: No abstract text available
Text: SK45GD063 C- R PO S$@ 407,- %*8,23.-, -', .6.,+ Absolute Maximum Ratings Symbol Conditions IGBT T$LA CU R PO S$ E$ CU R XPO S$ E$¥] *'-) MWW T YO Z C- R [W S$ NW Z XWW Z ^ PW T CU R XPO S$ XW b- C- R PO S$ NM Z C- R [W S$ PY Z E$¥]R P : E$0%& T$$ R NWW T_ TFL ` PW T_
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ECN30102
Abstract: No abstract text available
Text: Lead: Cu alloy + Pb-Free plating [Applied IC: ECN30102/30105/30107/30204/30207/30206/ 30611/30601/30603/30604/30671SP/SPV/SPR]
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ECN30102/30105/30107/30204/30207/30206/
30611/30601/30603/30604/30671SP/SPV/SPR]
ECN30102
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Untitled
Abstract: No abstract text available
Text: Technical Data Effective January 2014 Industrial grade 15/10A Non-NEMA locking devices Project Name: Prepared By: Description Project Number: Date: Non-NEMA 15A, 125V/AC, 10A, 250V/AC, 3P-3W Catalog Number: Type: G CU CU G Receptacle Plug Non-NEMA 15A 125V; 10A 250V
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amcom
Abstract: AM150MX-CB AM150MX-CU AMCOM Communications
Text: High Power GaAs Power FET The RF Power House AM150MX-CB DESCRIPTION AMCOM's AM150MX-CU is part of the CU Series of GaAs MESFETs. This FEATURES device has a total gate width of 15.0 mm. The AM150MX-CB is designed for • High Frequency Applications up to 6 GHz
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AM150MX-CU
AM150MX-CB
S-8401
amcom
AMCOM Communications
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filotex
Abstract: NFC 93-521 WCT filotex WCF24 19-CE filotex et KY 58 TR6420
Text: 1n FILS POUR CONNEXIONS ENROULEES Ame Référence FILOTEX Code Produit W CP 30 0 ext. mm Jauge AWG Section mm 2 0 mm nature mini maxi 83 300 30 0,05 0,254 X Cu Ag 0,52 0,58 WCT 30 83 301 30 0,05 0,254 X Cu Ag 0,52 0,58 W CZ 30 83 596 30 0,05 0,254 X Cu Ag
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Untitled
Abstract: No abstract text available
Text: S c re w T y p e S e rie s 301 S e rie s Technical Data: Material: • HOUSING: NYLON UL 94 V-0. • Metal Housing: Brass Cu Zn Cu, Tin plated. • Wire guard: Stainless steel. • Screw: Steel galvanized and chrom atized. M2.6 Electrical: • Current rating: 10 Am ps/way max.
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/1000V.
1500VAC
60sec/1pcs
00mm/.
teH450
faxi450
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Untitled
Abstract: No abstract text available
Text: 1 oo I cu en cu oo + o o ir ; I CD LO cr^ S- 2 1 .2 + 0 .2 26 .5 ± 0.2 31± 0.3 457942 6 5 4 3 2 1 3020400007 3010400012 3021000027 3021000022 3020400006 3010200033 m ^ mM SR m ?l m íf # « X "ir. « % 1 1 3 1 1 1 I I H 62 PA H 62 H 62 65Mn ZZnAl4-l /v}
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NSRLEED17)
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