Optocoupler SFH 608
Abstract: No abstract text available
Text: SFH 608 SIEMENS FEATURES * Very High CTR at IF=1 mA, VCE=0.5 V - SFH608-2, 63-125% - SFH608-3,100-200% - SFH608-4,160-320% - SFH608-5, 250-500% • Specified Minimum CTR at lF=0.5 mA, VCE=1.5 V: > 32% typ. 120% Good CTR Linearity with Forward Current Low CTR Degradation
|
OCR Scan
|
SFH608-2,
SFH608-3
SFH608-4
SFH608-5,
E52744
SFH608
Optocoupler SFH 608
|
PDF
|
smd s101
Abstract: s101 6-pin RM1M VC200
Text: SIEMENS H11D1/H11D2/H11D3 PHOTOTRANSISTOR, 5.3 KV, TRIOS HIGH BVcer VOLTAGE OPTOCOUPLER FEATURES * * * • * * * * * * * * CTR at lp=10 mA, BVceR=10 V: >20% Good CTR Linearity with Forward Current Low CTR Degradation Very High Coliector-Emitter Breakdown
|
OCR Scan
|
H11D1/H11D2/H11D3
H11D1/H11D2,
E52744
H11D1/2/3
smd s101
s101 6-pin
RM1M
VC200
|
PDF
|
H11D3
Abstract: DSA0011162
Text: H11D1/H11D2/H11D3/H11D4 Phototransistor, 5.3 KV, TRIOS High BVCER Voltage Optocoupler FEATURES • CTR at IF=10 mA, BVCER=10 V: ≥20% • Good CTR Linearity with Forward Current • Low CTR Degradation • Very High Collector-Emitter Breakdown Voltage
|
Original
|
H11D1/H11D2/H11D3/H11D4
H11D1/H11D2,
H11D3/H11D4,
E52744
H11D1/2/3/4
17-August-01
H11D3
DSA0011162
|
PDF
|
H11D3
Abstract: No abstract text available
Text: g y, , H11D1/H11D2/H11D3/H11D4 Phototransistor, 5.3 KV, TRIOS High BVCER Voltage Optocoupler FEATURES • CTR at IF=10 mA, BVCER=10 V: ≥20% • Good CTR Linearity with Forward Current • Low CTR Degradation • Very High Collector-Emitter Breakdown Voltage
|
Original
|
H11D1/H11D2/H11D3/H11D4
H11D1/H11D2,
H11D3/H11D4,
E52744
H11D1/2/3
H11D1/2/3/4
H11D3
|
PDF
|
H11D3
Abstract: OPTO H11D1
Text: H11D1/H11D2/H11D3/H11D4 Phototransistor, 5.3 KV, TRIOS High BVCER Voltage Optocoupler FEATURES • CTR at IF=10 mA, BVCER=10 V: ≥20% • Good CTR Linearity with Forward Current • Low CTR Degradation • Very High Collector-Emitter Breakdown Voltage
|
Original
|
H11D1/H11D2/H11D3/H11D4
H11D1/H11D2,
H11D3/H11D4,
E52744
H11D1/2/3/4
1-888-Infineon
H11D1/2/3/4
H11D3
OPTO H11D1
|
PDF
|
H11D1
Abstract: H11D3 h11d3-d4 H11D12
Text: H11D1/H11D2/H11D3/H11D4 Phototransistor, 5.3 KV, TRIOS High BVCER Voltage Optocoupler FEATURES • CTR at IF=10 mA, BVCER=10 V: ≥20% • Good CTR Linearity with Forward Current • Low CTR Degradation • Very High Collector-Emitter Breakdown Voltage
|
Original
|
H11D1/H11D2/H11D3/H11D4
H11D1/H11D2,
H11D3/H11D4,
E52744
H11D1/2/3/4
1-888-Infineon
H11D1/2/3/4
H11D1
H11D3
h11d3-d4
H11D12
|
PDF
|
H11D1
Abstract: H11D1-X007 H11D2 H11D3 H11D4
Text: H11D1/ H11D2/ H11D3/ H11D4 Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection, High BVCER Voltage Features • • • • • • • • CTR at IF = 10 mA, BVCER = 10 V: ≥ 20 % Good CTR Linearly with Forward Current Low CTR Degradation
|
Original
|
H11D1/
H11D2/
H11D3/
H11D4
H11D1/H11D2,
H11D3/H11D4,
2002/95/EC
2002/96/EC
UL1577,
E52744
H11D1
H11D1-X007
H11D2
H11D3
H11D4
|
PDF
|
11D transistor
Abstract: No abstract text available
Text: SIEMENS H11 D1/H11 FEATURES • CTR at lp=10 mA.BVcERxlOV: 220% • Good CTR Linearity with Forward Currant • Low CTR Degradation • Very High Collector-Emitter Breakdown Voltage Phototransistor, 5.3 KV, TRÍOS High BVcer Voitage Optocoupler Dimensions in inches mm
|
OCR Scan
|
D1/H11
H11D3/H11D4,
E52744put
11D transistor
|
PDF
|
H11D1-X007
Abstract: H11D1 H11D2 H11D3 H11D4
Text: H11D1/ H11D2/ H11D3/ H11D4 Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection, High BVCER Voltage Features • • • • • • • • CTR at IF = 10 mA, BVCER = 10 V: ≥ 20 % Good CTR Linearly with Forward Current Low CTR Degradation
|
Original
|
H11D1/
H11D2/
H11D3/
H11D4
H11D1/H11D2,
H11D3/H11D4,
2002/95/EC
2002/96/EC
UL1577,
E52744
H11D1-X007
H11D1
H11D2
H11D3
H11D4
|
PDF
|
Untitled
Abstract: No abstract text available
Text: H11D1/H11D2/H11D3/H11D4 Phototransistor, 5.3 KV, TRIOS High BVcer Voltage Optocoupler FEATURES Dimensions in inches mm • CTR at / F=1 O m A, BVCER=10 V: >20% • Good CTR Linearity with Forward Current • Low CTR Degradation • Very High Collector-Em itter Breakdown Voltage
|
OCR Scan
|
H11D1/H11D2/H11D3/H11D4
D3/H11
|
PDF
|
siemens d 2101
Abstract: RB1M
Text: H11D1/H11D2/H11D3 SIEMENS PHOTOTRANSISTOR, 5.3 KV, TRIOS HIGH BVcer VOLTAGE OPTOCOUPLER FEATURES Package Dimensions in Inches mm • CTR at lp*10 mA, BVCER=10 V: ¿20% * Good CTR Llnsarlty with Forward Currant * Low CTR Degradation • Very High Collector-Em ltter Breakdown
|
OCR Scan
|
H11D1/H11D2/H11D3
H11D1/H11D2,
-H11D3,
cH11D1/2/3
siemens d 2101
RB1M
|
PDF
|
H11D3
Abstract: RBE1
Text: H11D1/H11D2/H11D3 PHOTOTRANSISTOR, 5.3 KV, TRIOS HIGH BVCER VOLTAGE OPTOCOUPLER FEATURES • CTR at IF=10 mA, BVCER=10 V: ≥20% • Good CTR Linearity with Forward Current • Low CTR Degradation • Very High Collector-Emitter Breakdown Voltage - H11D1/H11D2, BVCER=300 V
|
Original
|
H11D1/H11D2/H11D3
H11D1/H11D2,
H11D3,
E52744
H11D1/2/3
H11D1/2/3
H11D3
RBE1
|
PDF
|
VDE0303
Abstract: No abstract text available
Text: Infineon H11D1/H11D2/H11D3/H11D4 FEATURES CTR at / F=10 mA, BVCER=10 V: >20% Good CTR Linearity with Forward Current Low CTR Degradation Very High Collector-Emitter Breakdown Voltage - H11D1/H11D2, BVCer =300 V - H11D3/H11D4, BVc e r=200 V Isolation Test Voltage: 5300 VRMS
|
OCR Scan
|
H11D1/H11D2/H11D3/H11D4
H11D1/H11D2,
H11D3/H11D4,
E52744
5mA10J
1-888-lnfineon
11D1/2/3/4
VDE0303
|
PDF
|
H11D1
Abstract: SFH640 SFH640-1 SFH640-2 SFH640-3
Text: SFH640 5.3 kV TRIOS High BVCER Voltage Phototransistor Optocoupler FEATURES • CTR at IF=10 mA, VCE=10 V SFH640-1, 40-80% SFH640-2, 63-125% SFH640-3*, 100-200% • Good CTR Linearity with Forward Current • Low CTR Degradation • Very High Collector-emitter Breakdown
|
Original
|
SFH640
SFH640-1,
SFH640-2,
SFH640-3*
E52744
17-August-01
H11D1
SFH640
SFH640-1
SFH640-2
SFH640-3
|
PDF
|
|
|
SFH 110
Abstract: H11D1 SFH640 SFH640-1 SFH640-2 SFH640-3 IB 6403
Text: SFH 640 5.3 FEATURES • CTR at IF=10 mA, VCE=10 V SFH640-1, 40-80% SFH640-2, 63-125% SFH640-3*, 100-200% • Good CTR Linearity with Forward Current • Low CTR Degradation • Very High Collector-Emitter Breakdown Voltage, BVCER=300 V • Isolation Test Voltage: 5300 VACRMS
|
Original
|
SFH640-1,
SFH640-2,
SFH640-3*
E52744
SFH640
SFH640
SFH 110
H11D1
SFH640-1
SFH640-2
SFH640-3
IB 6403
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEMENS SFH640 5.3 KV TRIOS High BVCER Vbttage Phototransistor Optocoupler FEATURES • CTR at If=10 mA, VCE=10 V SFH640-1,40-80% SFH640-2,63-125% SFH640-3*, 100-200% • Good CTR Linearity with Forward Current • Low CTR Degradation • Very High Collector-Emitter Breakdown Voltag®. BVCeb=300 V
|
OCR Scan
|
SFH640-1
SFH640-2
SFH640-3*
SFH640
H11D1.
SFH640
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEMENS SFH 640 PHOTOTRANSISTOR 5.3 KVTRIOS HIGH BVCER VOLTAGE OPTOCOUPLER FEATURES • CTR at lF=10 mA, VCE=10 V SFH640-1,40-80% SFH640-2, 63-125% SFH640-3*, 100-200% • Good CTR Linearity with Forward Current • Low CTR Degradation • Very High Collector-Emitter Breakdown Volt
|
OCR Scan
|
SFH640-1
SFH640-2,
SFH640-3*
E52744
SFH640
H11D1
SFH640
|
PDF
|
H11D1
Abstract: SFH640 SFH640-1 SFH640-2 SFH640-3
Text: 5.3 FEATURES • CTR at IF=10 mA, VCE=10 V SFH640-1, 40-80% SFH640-2, 63-125% SFH640-3*, 100-200% • Good CTR Linearity with Forward Current • Low CTR Degradation • Very High Collector-emitter Breakdown Voltage, BVCER=300 V • Isolation Test Voltage: 5300 VRMS
|
Original
|
SFH640-1,
SFH640-2,
SFH640-3*
E52744
SFH640
1-888-Infineon
H11D1
SFH640
SFH640-1
SFH640-2
SFH640-3
|
PDF
|
SFH640-2
Abstract: H11D1 SFH640 SFH640-1 SFH640-3 IB 6403
Text: 5.3 FEATURES • CTR at IF=10 mA, VCE=10 V SFH640-1, 40-80% SFH640-2, 63-125% SFH640-3*, 100-200% • Good CTR Linearity with Forward Current • Low CTR Degradation • Very High Collector-Emitter Breakdown Voltage, BVCER=300 V • Isolation Test Voltage: 5300 VACRMS
|
Original
|
SFH640-1,
SFH640-2,
SFH640-3*
E52744
SFH640
SFH640-2
H11D1
SFH640
SFH640-1
SFH640-3
IB 6403
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only LED SMD Pb LG-110DBK-CTR DATA SHEET DOC. NO : QW0905-LG-110DBK-CTR REV. : C DATE : 13 - Apr. - 2011 發行 立碁電子 DCC LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 1/11 PART NO. LG-110DBK-CTR
|
Original
|
LG-110DBK-CTR
QW0905-LG-110DBK-CTR
LG-110DBK-CTR
LG-110
1000hrs
MIL-STD-202F
10min)
MIL-STD-202F:
MIL-STD-750D:
|
PDF
|
ACAA TRANSISTOR
Abstract: No abstract text available
Text: SFH 640 SIEMENS PHOTOTRANSISTOR 5.3 KVTRIOS HIGH BVCER VOLTAGE OPTOCOUPLER FEATURES • CTR at lF=10 mA, VCE=10 V SFH640-1, 40-80% SFH640-2, 63-125% SFH640-3*, 100-200% • Good CTR Linearity with Forward Current • Low CTR Degradation • Very High Collector-Em itter Breakdown Volt
|
OCR Scan
|
SFH640-1,
SFH640-2,
SFH640-3*
E52744
SFH640
ACAA TRANSISTOR
|
PDF
|
3Ft 6PIN
Abstract: 3FT 6-pin
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA & TO VDE UL & ®®®® CSA SETI 8EMKO DEMKO NEMKO BABT GlobalOptolsolator 6-Pin DIP Optoisolators Transistor Output CNY17-1 {CTR » 40-80% CNY17-2* [CTR •93-126%] CNY17-3* [CTR ■100 -200%] The CNY17-1, CNY17-2 and CNY17-3 devices consist of a gallium
|
OCR Scan
|
CNY17-1,
CNY17-2
CNY17-3
CNY17-1
CNY17-2*
CNY17-3*
3Ft 6PIN
3FT 6-pin
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TO a VDE UL CSA SETI <D <B> SEMKO DEMKO BS NEM KO CNY17-1 CNY17-2 SAßT [CTR = 40-80%] 6-Pin DIP Optoisolators Transistor Output [CTR = 63-125%] CNY17-3 CTR = 100-200%] Motorola Preferred Devices The CNY17-1, CNY17-2 and CNY17-3 devices consist of a gallium arsenide infrared
|
OCR Scan
|
CNY17-1,
CNY17-2
CNY17-3
CNY17-1
CNY17-2
CNY17-3
|
PDF
|
transistor ba 752 smd
Abstract: transistor smd 1 SFH6156
Text: SFH615A/SFH6156 Vishay Semiconductors Optocoupler, Phototransistor Output, High Reliability, 5300 VRMS Features • Excellent CTR Linearity Depending on Forward Current • Isolation Test Voltage, 5300 VRMS e3 • Fast Switching Times • Low CTR Degradation
|
Original
|
SFH615A/SFH6156
2002/95/EC
2002/96/EC
UL1577,
E52744
VDE0884)
SFH615A-1
SFH615A-2
SFH615A-3
SFH615A-4
transistor ba 752 smd
transistor smd 1
SFH6156
|
PDF
|
