CT3737 Search Results

CT3737TALNF

Abstract: 1010995
Contextual Info: TITLE: ENGINEERING CONTROL DRAWING. PART IDENTIFIER: CT3737TALNF DESCRIPTION: HIGH POWER CHIP TERMINATION, ALUMINUM NITRIDE, TUNED, ROHS COMPLIANT. ASSEMBLY DWG: 2900194 1.0 SPECIFICATIONS: 1.1 ELECTRICAL: 1.1.1 IMPEDANCE: 50Ω NOMINAL. 1.1.2 FREQUENCY: DC – 3.0 GHZ.

Contextual Info: TITLE: SPECIFICATION CONTROL DRAWING PART IDENTIFIER: CT3737 DESCRIPTION: HIGH POWER CHIP TERMINATION, BERYLLIA ASSEMBLY DWG: 1101224 1.0 SPECIFICATIONS: 1.1 ELECTRICAL: 1.1.1 IMPEDANCE: 50Ω NOMINAL. 1.1.2 FREQUENCY: DC - 2 GHZ. 1.1.3 VSWR: 1.35:1 MAX. 1.1.4

IP-1014

Contextual Info: TITLE: ENGINEERING CONTROL DRAWING. PART IDENTIFIER: CT3737TALN DESCRIPTION: HIGH POWER CHIP TERMINATION, ALUMINUM NITRIDE, TUNED. ASSEMBLY DWG: 2900134 1.0 SPECIFICATIONS: 1.1 ELECTRICAL: 1.1.1 IMPEDANCE: 50Ω NOMINAL. 1.1.2 FREQUENCY: DC – 3.0 GHZ. 1.1.3

Contextual Info: TITLE: ENGINEERING CONTROL DRAWING. PART IDENTIFIER: CT3737TALNF DESCRIPTION: HIGH POWER CHIP TERMINATION, ALUMINUM NITRIDE, TUNED, ROHS COMPLIANT. ASSEMBLY DWG: 2900194 1.0 SPECIFICATIONS: 1.1 ELECTRICAL: 1.1.1 IMPEDANCE: 50Ω NOMINAL. 1.1.2 FREQUENCY: DC – 3.0 GHZ.

Contextual Info: TITLE: SPECIFICATION CONTROL DRAWING PART IDENTIFIER: CT3737 DESCRIPTION: HIGH POWER CHIP TERMINATION, BERYLLIA ASSEMBLY DWG: 1101224 1.0 SPECIFICATIONS: 1.1 ELECTRICAL: 1.1.1 IMPEDANCE: 50Ω NOMINAL. 1.1.2 FREQUENCY: DC - 2 GHZ. 1.1.3 VSWR: 1.35:1 MAX. 1.1.4

Contextual Info: TITLE: ENGINEERING CONTROL DRAWING. PART IDENTIFIER: CT3737TALN DESCRIPTION: HIGH POWER CHIP TERMINATION, ALUMINUM NITRIDE, TUNED. ASSEMBLY DWG: 2900134 1.0 SPECIFICATIONS: 1.1 ELECTRICAL: 1.1.1 IMPEDANCE: 50Ω NOMINAL. 1.1.2 FREQUENCY: DC – 3.6 GHZ. 1.1.3

CT3737TALN

Abstract: 1010155
Contextual Info: TITLE: ENGINEERING CONTROL DRAWING. PART IDENTIFIER: CT3737TALN DESCRIPTION: HIGH POWER CHIP TERMINATION, ALUMINUM NITRIDE, TUNED. ASSEMBLY DWG: 2900134 1.0 SPECIFICATIONS: 1.1 ELECTRICAL: 1.1.1 IMPEDANCE: 50Ω NOMINAL. 1.1.2 FREQUENCY: DC – 3.0 GHZ. 1.1.3

Contextual Info: TITLE: SPECIFICATION CONTROL DRAWING PART IDENTIFIER: CT3737S DESCRIPTION: HIGH POWER CHIP TERMINATION, BERYLLIA ASSEMBLY DWG: 1101864 1.0 SPECIFICATIONS: 1.1 ELECTRICAL: 1.1.1 IMPEDANCE: 50Ω NOMINAL. 1.1.2 FREQUENCY: DC - 2 GHZ. 1.1.3 VSWR: 1.35:1 MAX.

Contextual Info: TITLE: SPECIFICATION CONTROL DRAWING PART IDENTIFIER: CT3737F DESCRIPTION: HIGH POWER CHIP TERMINATION, BERYLLIA ASSEMBLY DWG: 1101874 1.0 SPECIFICATIONS: 1.1 ELECTRICAL: 1.1.1 IMPEDANCE: 50Ω NOMINAL. 1.1.2 FREQUENCY: DC - 2 GHZ. 1.1.3 VSWR: 1.35:1 MAX. 1.1.4

SC0066M

Abstract: SC0052M SC0051M
Contextual Info: fTTS Teclmohgif Chips - High R eliability Term inations EMC Technology also offers the SC series chip termination with BeO Beryllium Oxide substrates fo r applications with critical reliability requirements. G eneral S pecifications Resistance Values . . . . 50 and 100 Ohms Standard

SC0066M

Contextual Info: Terminations Introduction Features • Nominal Impedance 50 or 100 Ohms • Power Rating 5 to 250 Watts • Frequency Range from DC to 26.5 GHz • Substrates in BeO, AlN or Alumina • Three Package Styles Available Surface Mount, Chip, and Pill • S-parameter Data Available

tva0300n07

Abstract: mmic amplifier marking code N10 MTVA0300N05 PST-02-A-1 TVA0300N07W3 electronic passive components catalog SC-1016 MTVA0300 SMT2010TALN 42TVA
Contextual Info: EMC TECHNOLOGY Custom Engineered Solutions 8851 SW Old Kansas Ave. 772 286-9300 ISO 9001 & 14001 Certified M I C R OWAV E C O M P O N E N T S www.emct.com Resistive Products, Smart Loads , High Reliability Stuart, FL 34997 (800) 544-5594 Thermopads®, Equalizers,

CT3523

Contextual Info: H I G H P O W E R C H I P T E R M I N A T I O N S EMC's high power chip terminations are optimized for RF performance. Since most types are printed to value, the variability of capacitive reactance and localized hot spots associated with trimming are eliminated. Reduced lot variation

MTVA0300N07

Abstract: MTVA0300
Contextual Info: EMC Technology RF & MICROWAVE CABLE ASSEMBLIES & COAXIAL COMPONENTS CATALOG ASR Lab-­Flex Lab-­Flex® S Lab-­Flex® AF Semi-­Rigid, Conformable & Flexible Semi-­Rigid Low Loss RG Series Test Cable Assemblies DQG&RD[LDO3DVVLYH&RPSRQHQWV

trm a55

Contextual Info: EMC Technology RF & MICROWAVE CABLE ASSEMBLIES & COAXIAL COMPONENTS CATALOG ASR Lab-­Flex Lab-­Flex® S Lab-­Flex® AF Semi-­Rigid, Conformable & Flexible Semi-­Rigid Low Loss RG Series Test Cable Assemblies DQG&RD[LDO3DVVLYH&RPSRQHQWV

Contextual Info: ^ EMC'S high power chip terminations are optimized for RF performance. All EMC chips are designed to minimize the variability o f capacitive reactance and localized hot spots associated w ith trimming are eliminated. Reduced lot vanation means your circuit performs so consistently that in most cases no tuning is required.

ina 124

Abstract: CT2525ALN "beryllium oxide" HR0500 ct2335 SMT3725ALN SC0066M
Contextual Info: SES 1 Index Tedmolo^ii L Product Index EM C P art Num ber Description Pow er Level W Substrate M aterial M ax VSWR M ax Frequency (G Hz) Page N um ber TVA Series Thermopads 2 Alum ina 1.30:1 6 GHz 12 M TVAXXXXN XX Thermopads 0.2 A lum ina 1.30:1 18 GHz

CT2525ALN

Abstract: CT2010A
Contextual Info: f*TTTS Tedm ohm/ Term inations Chips - Standard EMC's high power chip terminations are optimized fo r RF performance. All EMC chips are designed to minimize the variability o f capacitive reactance. Localized hot spots associated with trimming have been eliminated. Reduced

CT-1005

Abstract: g 0247 0372
Contextual Info: lin T u l litologi/ Chips - Standard Term inations S election Table Power W Substrate Frequency Max. Avg. (GHz) VSWR Type 2 5 5 10 15 15 15 15 20 20 20 40 50 80 85 100 120 120 150 150 150 250 * BeO Alumina AIN BeO BeO AIN BeO AIN BeO AIN Alumina AIN BeO

CT2525ALN

Abstract: CT3523 CT2010A
Contextual Info: Chips – Standard Terminations EMC’s high power chip terminations are optimized for RF performance. All EMC chips are designed to minimize the variability of capacitive reactance. Localized hot spots associated with trimming have been eliminated. Reduced