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    CS 2131 Search Results

    CS 2131 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CMT2-13-1L Coilcraft Inc Single Phase EMI Filter, ROHS COMPLIANT PACKAGE-4 Visit Coilcraft Inc
    20021311-00020T8LF Amphenol Communications Solutions 1.27mm (0.05in.) pitch, Receptacle Top entry, 20 contacts Visit Amphenol Communications Solutions
    20021311-00058T4LF Amphenol Communications Solutions 1.27mm (0.05in.) pitch, Receptacle Top entry, 58 contacts Visit Amphenol Communications Solutions
    20021311-00024T8LF Amphenol Communications Solutions 1.27mm (0.05in.) pitch, Receptacle Top entry, 24 contacts Visit Amphenol Communications Solutions
    20021311-00034T4LF Amphenol Communications Solutions 1.27mm (0.05in.) pitch, Receptacle Top entry, 34 contacts Visit Amphenol Communications Solutions
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    CS 2131 Price and Stock

    Hirose Electric Co Ltd HCS2-131-F(40)

    IC RF SWITCH COAX
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    DigiKey HCS2-131-F(40) Bulk 1
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    TE Connectivity 202K174-25-0CS2131

    202K174-25-0CS2131
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    DigiKey 202K174-25-0CS2131 Bag 1,000
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    Avnet Americas 202K174-25-0CS2131 Bulk 18 Weeks 1,000
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    Interstate Connecting Components 202K174-25-0CS2131
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    TE Connectivity 202K132-3-42-0CS2131

    202K132-3/42-0CS2131
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    TE Connectivity 202K132-100-86-0CS2131

    202K132-100/86-0CS2131
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    TE Connectivity BND40AB90-1407V-CS-2131

    BND40AB90-1407V-CS-2131
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    Avnet Americas BND40AB90-1407V-CS-2131 Bulk 14 Weeks, 1 Days 50
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    Onlinecomponents.com BND40AB90-1407V-CS-2131
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    Master Electronics BND40AB90-1407V-CS-2131
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    Find more CS 2131 price and stock on Findchips.com

    CS 2131 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: NT2GT72U4NA0BV 2GB: 256M x 72 Preliminary Low Profile Registered DDR2 SDRAM DIMM 240pin Low Profile Registered DDR2 SDRAM MODULE Based on 128Mx4 DDR2 SDRAM Features • On Die Termination • 256Mx72 Low Profile Registered DDR2 DIMM based on • Data is read or written on both clock edges


    Original     		PDF NT2GT72U4NA0BV 240pin 128Mx4 256Mx72 240-pin PC2-3200

    Untitled

    Abstract: No abstract text available
    Text: NT2GT72U4NA0BV 2GB: 256M x 72 Low Profile Registered DDR2 SDRAM DIMM 240pin Low Profile Registered DDR2 SDRAM MODULE Based on 128Mx4 DDR2 SDRAM Features • On Die Termination • 256Mx72 Low Profile Registered DDR2 DIMM based on • Data is read or written on both clock edges


    Original     		PDF NT2GT72U4NA0BV 240pin 128Mx4 256Mx72 240-pin PC2-3200 SSTL-18

    MPC821

    Abstract: PA10 PA11 PA13 PA15 PB30 PB31 b30r
    Text: SECTION 21 ELECTRICAL CHARACTERISTICS This section contains detailed information on power considerations, DC/AC electrical characteristics, and AC timing specifications for the MPC821. NOTE The MPC821 electrical specifications are preliminary and many specs are from design simulations. These specifications may


    Original     		PDF MPC821. MPC821 PA10 PA11 PA13 PA15 PB30 PB31 b30r

    8237AE-5

    Abstract: UM8237AE 8237ae UM8237AE-5 UM8237AE-4-5 8085 block transfer program UM8237 8085AH-2 8237AH UM8237A
    Text: UNICORN MIC RO ELE CT RO NI CS 24E D •Î27fl7flë GGQ0177 3 S 33^ r - Z Z l - 3 3 - 1? UM8237AE-4-5 Programmable DMA Controller DMAC Features Second w ith 5 MHz UM8237AE-5 • Enable/Disable Control o f Individual DMA Requests ■ Directly Expandable to any Number of Channels


    OCR Scan     		PDF QQ0Q17T r-ZZl-33-1? UM8237AE-4-5 UM8237AE-5 UM8237AE/-4/-5 UM8237AE-4/-5 UM8237AE UM8237AÃ UM8237AE-5 8237AE-5 8237ae UM8237AE-4-5 8085 block transfer program UM8237 8085AH-2 8237AH UM8237A

    Untitled

    Abstract: No abstract text available
    Text: R F W i MICRO DEVICES DUAL-MODE CDMA/AM PS OR TOMA/AMPS 3 V POWER A M PLIFIER Typical Applications • Spread Spectrum Systems • 3 V JCDM A /TA CS Cellular Handsets • C D P D Portable Data Cards • 3 V T D M A /A M P S Cellular Handsets • Portable Battery-Powered Equipment


    OCR Scan     		PDF RF2152 28V5O 1960kHecffset) 27dBm

    TEKELEC 297

    Abstract: intel 4269 mcs48 assembly language SEVEN SEGMENT FUNCTION TABLE OF IC 7447 bcd to hex using ic 7447 Intel 8245 intel 8048 8245 mcs-48 intel 4269 rep 197b TA 365 TEKELEC
    Text: intJ AP-40 APPLICATION NOTE June 197B <s> r? tV8P> A sy rV A''" O ? N ^ rf<> > v « ® Intel Corporation, 1978 w ^ •c T v > V 9800755 R elated In te l P u b lic atio n s ” M CS-48 M ic ro c o m p u te r F a m ily U sers' M a n u a l” "M C S-48 A s s e m b ly Language P ro g ra m m in g M a n u a l”


    OCR Scan     		PDF AP-40 CS-48 B-1160 D-2085 D-8000 0732t RG20LS TEKELEC 297 intel 4269 mcs48 assembly language SEVEN SEGMENT FUNCTION TABLE OF IC 7447 bcd to hex using ic 7447 Intel 8245 intel 8048 8245 mcs-48 intel 4269 rep 197b TA 365 TEKELEC

    F48D

    Abstract: SI07
    Text: »RODUCT r m3 fin 76764— X69 g 2 3 u5 Tnm onnt « tfw oroowty at «nd » "TnO — onxnMary O M g n * o< N 5ERG ELfCTW ONCS D M 9 I0 N al OLI PONT OC NEM O URS N E C tR U W O B V No pari oI V « d M q n tfiovn on IN * orrt mmr be uaatf m any ««y «Mihout m« «mttwi conmmrt oi BERG ELECTRO M CS O M SiO N »-Henogenboech.


    OCR Scan     		PDF Si-07-/ F48D SI07

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Memory ICs 1,024-Bit Serial Electrically Erasable PROM BR93LL46F/BR93LL46FV •Features • Low power CMOS technology • 64 x 16 bit configuration • 1.8V to 4.0V operation • Low power consumption - 0.5mA typ. active current - 0.4 f i k (typ.) stanby current


    OCR Scan     		PDF 024-Bit BR93LL46F/BR93LL46FV D021317

    MCM514258AZ80

    Abstract: MCM 2128 RAM MCM514258AZ70 MCM 2128 M514258A MCM5142S8A-70
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M CM 514258A 2 5 6 K x 4 C M O S Dynam ic R A M S tatic Column The MCM514258A is a 1.0/t CMOS high-speed, dynam ic random access m em ory. It is organized as 262,144 fo u r-b it w ords and fabricated w ith CMOS silicon-gate process tech­


    OCR Scan     		PDF 14258A MCM514258A 300-mil 100-mil 14258A Numbers-MCM514258AP70 MCM514257AP80 MCM514258AP10 MCM514258AZ80 MCM 2128 RAM MCM514258AZ70 MCM 2128 M514258A MCM5142S8A-70

    XLS93C46-3

    Abstract: XL93C46 XLE93C46-3 SK 702 XL93C46-3 93c46 wp Exel
    Text: ROHM CORP/ EXEL NELECS k/fcrf bbE D • 7fiE‘i G m MICROELECTRONICS GÜDlb7S ST7 XL93C46-3 Exot/tonetIn$ 1,024-Bit Serial 3V to 5V Electrically Erasable PROM with 2V Read Capability F E A TU R ES PIN C O N F IG U R A TIO N S ■ S tate-o f-th e-A rt A rch itecture


    OCR Scan     		PDF 00Dlb75 XL93C46-3 024-Bit XLS93C46-3 XL93C46 XLE93C46-3 SK 702 XL93C46-3 93c46 wp Exel

    Untitled

    Abstract: No abstract text available
    Text: im X25021 2K 256 x 8 Bit SPI Serial E2PROM with Block Lock Protection FEATURES DESCRIPTION • 1MHz Clock Rate • SPI Modes 0,1 & 1,0 • 256 X 8 Bits — 4 Byte Page Mode • Low Power CMOS — 10|iA Standby Current — 3mA Active Current • 2.7V To 5.5V Power Supply


    OCR Scan     		PDF X25021

    Untitled

    Abstract: No abstract text available
    Text: X25021 2K 256 x 8 Bit SPI Serial E2PROM With BLOCK LOCK PROTECTION FEATURES DESCRIPTION • 1 MHz Clock Rate • SRI Modes 0,1 & 1,0 • 256 X 8 Bits — 4 Byte Page Mode • Low Power CMOS — 150)iA Standby Current — 3mA Active Current • 2.7V To 5.5V Power Supply


    OCR Scan     		PDF X25021 D0D44DD

    Untitled

    Abstract: No abstract text available
    Text: im X25021 2K 256 x 8 Bit SPI Serial E2PROM With BLOCK LOCK PROTECTION FEATURES DESCRIPTION • 1MHz Clock Rate • SPI Modes 0,1 & 1,0 • 256 X 8 Bits — 4 Byte Page Mode • Low Power CMOS — 150|iA Standby Current — 3mA Active Current • 2.7V To 5.5V Power Supply


    OCR Scan     		PDF X25021 X25021 2048-bit

    siemens master drive circuit diagram

    Abstract: 9221 st tgl 4977 Q67100-H3260 Q67100-H5101 SDA2586 siemens sda2586 UEBOI276 CI 4583
    Text: SIEMENS «easbos a a a s i a a 771 Nonvolatile Memory 8-Kbit E2PROM with I 2C Bus Interface SDA 2586 MOS 1C Features • Word-organized, reprogrammable nonvolatile memory in n-channel floating-gate technology E2PROM • 1024 x 8-bit organization • Supply voltage 5 V


    OCR Scan     		PDF Q67100-H5101 25X86-5 Q67100-H3260 S-164 fl23SbG5 siemens master drive circuit diagram 9221 st tgl 4977 SDA2586 siemens sda2586 UEBOI276 CI 4583

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Nonvolatile Memory 8-Kbit E2PROM with I2C Bus and Write Protection SDA 3586-5 MOS 1C Features • Word-organized programmable nonvolatile memory in n-channel floating-gate technology E2PROM • 1024 x 8-bit organization • Supply voltage 5 V • Serial 2-line bus for data input and output (l2C Bus)


    OCR Scan     		PDF Q67100-H5102 E1414 023SbG5

    siemens master drive circuit diagram

    Abstract: AKER Ah NL-2500 TD13 park 16068 siemens 7st
    Text: SIEMENS Nonvolatile Memory 4-Kbit E2PROM with I2C Bus and Write Protection SDA 3546-5 MOS 1C Features • Word-organized programmable nonvolatile memory in n-channel floating-gate technology E2PROM • 512 x 8-bit organization • Supply voltage 5 V • Serial 2-line bus for data input and output (l2C Bus)


    OCR Scan     		PDF Q67100-H5098 S-164 fl23SbG5 siemens master drive circuit diagram AKER Ah NL-2500 TD13 park 16068 siemens 7st

    Untitled

    Abstract: No abstract text available
    Text: STI7216018UD2-10V G—Preliminary 168-PIN OIMMS 16M X 72 Bits SDRAM Unbuffered DIMM Optimized for ECC FEATURES GENERAL DESCRIPTION The Simple Technology STI7216018UD2-10VG is a 16M x 72 bits Synchronous Dynamic RAM SDRAM Dual n-line Memory Module (DIMM). The Simple Technology STI7216018UD210VG consists of eighteen CMOS 4M x 8 bits x 2 banks


    OCR Scan     		PDF STI7216018UD2-10V 168-PIN 100MHz cycles/64ms STI7216018UD2-10VG STI7216018UD210VG 54-pin 400-mil 83MHz

    DQ380

    Abstract: U4 Package ADQ36
    Text: STI644006UD2-1OVG 168-PIN DIMMS 4M X 64 Bits SDRAM Unbuffered DIM M FEATURES GENERAL DESCRIPTION • Maximum frequency=100MHz tcc=10ns • Burst Mode Operation • Auto and self refresh capability (4096 cycles/64ms refresh) • • LVTTL compatible inputs and outputs


    OCR Scan     		PDF STI644006UD2-1OVG 100MHz cycles/64ms 168-PIN STI644006UD2-10VG STI644006UD2-1 50-pin 400-mil DQ380 U4 Package ADQ36

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Nonvolatile Memory 2-Kbit E2PROM with l 2C Bus and 2 K Write Protection SDA 3526 MOS 1C Features • Word-organized programmable nonvolatile memory in n-channel floating-gate technology E2PROM • 256 x 8-bit organization • Supply voltage 5 V • Serial 2-line bus for data input and output (I2C Bus)


    OCR Scan     		PDF Q67100-H3254 Q67100-H34 E1414 023SbG5

    SEIKO Year of assembly

    Abstract: S22H12I01
    Text: S-22H12R/I 256-word x4-bit parallel NON-VOLATILE RAM The S-22H12R/I is a non-volatile CMOS RAM, composed of a CMOS static RAM and a non-volatile electrically erasable programmable memory E2PROM to backup the SRAM. The organization is 256-word x 4-bit (total 1024 bits) and


    OCR Scan     		PDF S-22H12R/I 256-word S-22H12R/I X2212 Pi133 A123443 SEIKO Year of assembly S22H12I01

    e1414

    Abstract: siemens master drive circuit diagram Siemens pulse sequence
    Text: SIEMENS Nonvolatile Memory 2-Kbit E2PROM with I 2C Bus Interface SDA 2526 MOS 1C Features • Word-organized programmable nonvolatile memory in n-channel floating-gate technology E2PROM • 256 x 8-bit organization • Supply voltage 5 V • Serial 2-line bus for data input and output (l2C Bus)


    OCR Scan     		PDF 25X26-5 25X26 Q67100-H5095 Q67100-H3253 Q67100-H3257 Q67100-H3258 E1414 023SbG5 siemens master drive circuit diagram Siemens pulse sequence

    ADVM

    Abstract: cy7c379 CY7C178 CY7C179 RD7I141
    Text: PRELIMINARY CYPRESS Features • Supports 66-MHzPentium micro­ processor cache systems with zero wait states • 32K by 18 common I/O • Fast clock-to-output times — 8.5 ns • Itoo-bit wraparound counter support­ ing Pentium and 486 burst sequence


    OCR Scan     		PDF CY7C178 CY7C179 66-MHz CY7C178) CY7C179) 52-pin CY7C179 CY7C178â 12YMB ADVM cy7c379 RD7I141

    e1414

    Abstract: siemens master drive circuit diagram L1152B siemens sda
    Text: SIEMENS Nonvolatile Memory 1-Kbit E2PROM with PC Bus Interface SDA 2516 MOSIC Features • Word-organized reprogrammable nonvolatile memory in n-channel floating-gate technology E2PROM • 128 x 8-bit organization • Supply voltage 5 V • Serial 2-line bus for data input and output (I2C Bus)


    OCR Scan     		PDF 25X16-5 25X16 Q67100-H5092 Q67100-H3252 Q67100-H3255 Q67100-H3256 E1414 023SbG5 siemens master drive circuit diagram L1152B siemens sda