CRYSTALONICS CH Search Results

2N3440 2N5416 REPLACEMENT

Abstract: 2N4001 diode Motorola -transistors 2N3440 MOTOROLA Motorola diodes 2N5415 REPLACEMENT 2N5416 MOTOROLA 2N5415
Contextual Info: Crystalonics: Transistors And Diodes Page 1 of 2 Small Signal Transistors JFETs <Pre Next> Surface Mount Transistors Dual and Quad Transistors PLANAR POWER TRANSISTORS 1 AMP NPN Dual Emitter Chopper 3N Transistors Power Transistors Obsolete "Motorola" Transistors

2N5333 MOTOROLA

Abstract: Motorola diodes 2n5000 Transistors 2N3741 MOTOROLA TRANSISTORS REPLACEMENT 2N3740 motorola
Contextual Info: Crystalonics: Transistors And Diodes Page 1 of 2 Small Signal Transistors JFETs <Pre Next> Surface Mount Transistors Dual and Quad Transistors PLANAR POWER TRANSISTORS 2 AMP NPN Dual Emitter Chopper 3N Transistors Power Transistors Obsolete "Motorola" Transistors

Motorola -transistors

Abstract: Motorola diodes 2N3024 2N3025 2N3026 2N2984 2N2983 2N3021 2N3022 2N3023
Contextual Info: Crystalonics: Transistors And Diodes Page 1 of 2 Small Signal Transistors JFETs <Pre Next> Surface Mount Transistors Dual and Quad Transistors PLANAR POWER TRANSISTORS 3 AMP NPN Dual Emitter Chopper 3N Transistors Power Transistors Obsolete "Motorola" Transistors

Contextual Info: PRELIMINARY INFORMATION TSC176 TSC177 TSC15C25A TSC15C27A TSC25C25A TSC25C27A TSC35C25A TSC35C27A WTELEDYNE COMPONENTS The capability of Teiedyne Semiconductor, Philbrick, Crystalonics And more. BiCMOS PWM CONTROLLERS Features • ■ ■ ■ ■ ■ ■

FF627

Abstract: LS627 2800K
Contextual Info: LS627 PHOTO FET LIGHT SENSITIVE JFET Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR CRYSTALONICS FF627 FLAT GLASS TOP FOR EXTERNAL OPTICS ULTRA HIGH SENSITIVITY ABSOLUTE MAXIMUM RATINGS1 TO-72 BOTTOM VIEW @ 25 °C unless otherwise stated Maximum Temperatures

U402 N CHANNEL FET

Abstract: P-Channel Depletion Mode FET zener diode color codes glass zener diode color codes j201 jfet jfet n channel ultra low noise low noise p-channel fet dual fet q7 diode sg 71 jfet photo diode
Contextual Info: LS627 PHOTO FET LIGHT SENSITIVE JFET Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR CRYSTALONICS FF627 FLAT GLASS TOP FOR EXTERNAL OPTICS ULTRA HIGH SENSITIVITY ABSOLUTE MAXIMUM RATINGS1 TO-72 BOTTOM VIEW @ 25 °C unless otherwise stated Maximum Temperatures

Contextual Info: ÜCT 1 1 ‘390 WTELEDYNE COMPONENTS The capability of Teledyne Semiconductor, Philbrick, Crystalonics And m ore. TSC172 TSC173 BICMOS CURRENT MODE SMPS CONTROLLER FEATURES • Low Power BiCMOS Construction ■ Low Supply Current. 1.5 mA Typ

Contextual Info: , Line. u 20 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 SPRINGFIELD, NEW JERSEY 07081 U.S.A. IFN860 Dual N-Channel Silicon Junction Field-Effect Transistor Low-Noise Audio Amplifier Equivalent to Crystalonics CD860 Absolute maximum ratings at TA = 25°C

amelco

Contextual Info: LS627 PHOTO FET LIGHT SENSITIVE JFET FEATURES DIRECT REPLACEMENT FOR CRYSTALONICS FF627 FLAT GLASS TOP FOR EXTERNAL OPTICS TO-72 TOP VIEW ULTRA HIGH SENSITIVITY 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C unless otherwise stated Maximum Temperatures Storage Temperature

transistor D195

Abstract: 3-pin D195 transistor D195
Contextual Info: B 43 9 -9 7 IFN860 DUAL N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • LOW NOISE AUDIO AMPLIFIER • Equivalent to Crystalonics CD860 Absolute maximum ratings at TA = 25°C Reverse Gate Source & Reverse Gate Drain Voltage - 20 V Continuous Forward Gate Current

CAG48

Abstract: SPDT FETs Crystalonics 2N5066 dpdt mechanical relays 3v 2N3677 CAG30 CDA28 CDA29 CS4R101A
Contextual Info: H IG H L IG H T S CH-2 These circuits represent the best of combined Monolithic and Hybrid technology. Each uses a specially de­ signed Crystalonics monolithic circuit which interfaces with standard logic and drives discrete chip switching trarrsistors. While the monolithic circuit keeps size and cost to a minimum, the discrete output

FF627

Abstract: ls627
Contextual Info: LS627 PHOTO FET LIGHT SENSITIVE JFET FEATURES DIRECT REPLACEMENT FOR CRYSTALONICS FF627 FLAT GLASS TOP FOR EXTERNAL OPTICS TO-72 TOP VIEW ULTRA HIGH SENSITIVITY 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C unless otherwise stated Maximum Temperatures Storage Temperature

IFN860

Abstract: CD860 transistor B43
Contextual Info: Databook.fxp 1/14/99 12:22 PM Page B-43 B-43 01/99 IFN860 Dual N-Channel Silicon Junction Field-Effect Transistor ¥ Low-Noise Audio Amplifier ¥ Equivalent to Crystalonics CD860 Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage

TSC18C

Contextual Info: NOV 1 8 199 ' PRELIMINARY INFORMATION WTELEDYNE COMPONENTS TSC18C42/3/4/5 TSC28C42/3/4/5 TSC38C42/3/4/5 The capability o f Teledyne Sem iconductor, Philbrick, Crystalonics A n d m ore. BiCMOS CURRENT MODE SMPS CONTROLLER Features • ■ ■ ■ ■ ■

C0860

Abstract: CD860 S1109 Crystalonics GAIA 10VIO 1AA6
Contextual Info: C3= CRYSTALONICS W ebsite: W WW .Crystalonics.com Phone: 63 1-9 81 -61 40 Fax: (631-585-4858) * S e o p ric e lis t fo r o rd ering in fo rm a tio n ULTRA LOW NOISE CD860 DUAL M ATCHED N C H A N N E L FIELD EFFECT TRANSISTOR HIGH PERFO RM ANCE D IFFE R E N TIA L

Crystalonics

Abstract: CAG48 2N3677 CAG30 CDA28 CDA29 CS4R101A CSH101
Contextual Info: HIGHLIGHTS C H -2 These circuits represent the best o f com bined M o n o lith ic and H yb rid technology. Each uses a specially de­ signed Crystalonics m o n o lith ic c irc u it w hich interfaces w ith standard logic and drives discrete chip switching trarrsistors. W hile the m o n o lith ic c irc u it keeps size and cost to a m in im u m , the discrete o u tp u t

CP650

Abstract: CP651 2N4448 2N4445 Crystalonics TELEDYNE teledyne crystalonics CP652 CP653
Contextual Info: CP650 CP651 CP652 CP653 PO W RFET SILICON E P IT A X IA L JUNCTION N-CHANNEL FIELD EFFECT TRANSISTORS GEOMETRY 424, PG. 58 • • • • LOW R d s - 5 Ohms TYPICAL LOW Cgd - 20 pfd TYPICAL HIGH lDSS - 0.5 Amp TYPICAL HIGH gm 150,000 /xmhos TYPICAL ELECTRICAL DATA

VA-201

Abstract: teledyne crystalonics VA312 VA-200 VA-202 VA-203 VA-204 VA-205 VA-206 VA-207
Contextual Info: TELEDYNE ! m EÛE D COMPONENTS a=ilT b Q e OClQbbUa ? • -T-0“7-/9 H IG H V O L T A G E - H I Q | VARACTRON V O L T A G E -V A R IA B L E C A P A C IT A N C E D IO D E S VA200-213 GEOMETRY 415 • ALL EPITAXIAL C O N S TR U C TIO N P + N N + • 1SO V O LTS DC RATING (M W V )

TELEDYNE CRYSTALONICS

Abstract: 2N4447 2N4445 cgel CP650 2N4448 CP653 N4446 2n4446
Contextual Info: CP650 thru CP653 2N4445 thru 2N4448 TYPICAL CHARACTERISTICS GATE LEAKAGE CURRENT VS. TEMPERATURE < > o ►O < i o oc Z -20 - -2 5 +50 TEMPERATURE Ro~ INCREASES +75 too -120 (°C TEMPERATURE 0 .7 % / ° C I gss JUNCTION CAPACITANCE VS. VOLTAGE (°Q DOUBLES EACH !0 ° C

2N5114

Abstract: 2N5115 field effect transistors TELEDYNE CRYSTALONICS
Contextual Info: SWITCHING 2N5114 2N5115 P-CHANNEL FIELD EFFECT TRANSISTORS G E O M E T R Y 4 60, PG. 60 For Analog Switch, Commutators and Choppers ABSOLUTE M AXIM UM RATINGS PAR A M E TE R SYM BOL MAX. U N IT Gate to Drain Voltage BVgdo 30 V Gate to Source Voltage B V gso

3N131

Abstract: 3N129 3N132 CEE 32A 3N123 3N130 3N133 3N136 teledyne crystalonics
Contextual Info: « • • • • 3N129 3N130 3N131 3N132 3N133 PREMIUM PERFORMANCE LOWree sat SILICON EPITAXIAL JUNCTION INTEGRATED CHOPPER TRANSISTORS G E O M E T R Y 4 5 0 , PG . 59 ULTRA LOW ree (sat), 8 Ohms TYP. LOW Ceb & C«., 2.5 pfd TYP. LOW LEA KA G E, 0.5 nA MAX.

2N6550

Abstract: ultra low igss pA AAHB low igss 2N6550/CM860
Contextual Info: ULTRA LOW NOISE h â 2N6550 SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTOR r • GEOMETRY 424, PG. 58 ¿ 3 0 MAX The 2N 6550 is a high, Jn/lD lo w noise ju n c tio n F.E.T. fo r lo w level a m p lifie r use. The min. gm o f 25,000 ^imho assures a voltage gain o f 25 m in. w ith a 1K

2N6550

Abstract: CD860 teledyne transistor teledyne crystalonics
Contextual Info: TELEDY NE COMPONENTS SÔE D • ôTlTbûa GQQbSS4 2 ■ 7 < Il - * 5 ULTRA LOW NOISE 2N6550 CM860 SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTOR G E O M E T R Y 424 .230 MAX. 195t.005- Lo The 2 N 6 5 5 0 / C M 8 6 0 is a high, gm />D low noise Junction F.E.T. for low level

3n123

Contextual Info: TELEDYNE COMPONENTS SÖE aT17bQ5 D □QQf c. STS S r ~'07-'d3 3N134 3N135 3N136 LOWree sat SILICON EPITAXIAL JUNCTION INTEGRATED CHOPPER TRANSISTORS G E O M E T R Y 45 0 • • • • U LTRA LOW ree(sat), 10 S2 TYP. LOW LEAKAGE, 2 na TYP. L 0 W C flb,3pfdTYP.