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S29WS128N

Abstract: SA050 S29WS S29WS256N S29WS-N BAX55
Contextual Info: S29WS-N MirrorBitTM Flash Family S29WS256N, S29WS128N 256/128 Megabit 16/8 M x 16 bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory S29WS-N MirrorBitTM Flash Family Cover Sheet Data Sheet (Advance Information) Notice to Readers: This document states the current technical specifications regarding the Spansion

MPC8540

Abstract: DDR12 MPC8540CE DDR11 DDR10 CPU29 LBC11 0x81000100 PCIX30
Contextual Info: Freescale Semiconductor MPC8540CE Rev 0.3, 11/2004 Errata MPC8540 PowerQUICC III Device Errata This document details all known silicon errata for the MPC8540 PowerQUICC III device. It also includes errata for the e500 core. Table 1 provides a revision history for this document.

S29WS128N

Abstract: S29WS S29WS256N S29WS-N
Contextual Info: S29WS-N MirrorBitTM Flash Family S29WS256N, S29WS128N 256/128 Megabit 16/8 M x 16 bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory Data Sheet PRELIMINARY Notice to Readers: This document states the current technical specifications

RLDRAM

Abstract: MT49H16M18C
Contextual Info: 288Mb: x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM 2 Features SIO RLDRAM 2 MT49H16M18C – 16 Meg x 18 x 8 banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate • 38.4 Gb/s peak bandwidth (x36 at 533 MHz clock frequency) • Organization

MT49H16M18C

Contextual Info: 288Mb: x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features SIO RLDRAM II MT49H16M18C – 16 Meg x 18 x 8 banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate • 38.4 Gb/s peak bandwidth (x36 at 533 MHz clock frequency) • Organization

DDR12

Abstract: MPC8540 MPC8540CE DDR11 DDR10
Contextual Info: Freescale Semiconductor MPC8540CE Rev 0.2, 10/2004 Errata MPC8540 PowerQUICC III Device Errata This document details all known silicon errata for the MPC8540 PowerQUICC III device. It also includes errata for the e500 core. Table 1 provides a revision history for this document.

Contextual Info: Am29BDS320G Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

Contextual Info: ADVANCE INFORMATION Am29BDS320G 32 Megabit 2 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single 1.8 volt read, program and erase (1.65 to 1.95 volt) ■ Manufactured on 0.17 µm process technology

adr-301

Abstract: NIC-301 AMBA Network Interconnect NIC-301 Implementation Guide AMBA AXI to AHB BUS Bridge verilog code state diagram of AMBA AXI protocol v 1.0 AMBA AXI designer user guide verilog rtl code of Crossbar Switch AMBA AHB bus protocol AMBA AXI verilog code nic301
Contextual Info: CoreLink Network Interconnect NIC-301 Revision: r2p2 Technical Reference Manual Copyright 2006-2010 ARM. All rights reserved. ARM DDI 0397H ID080710 CoreLink Network Interconnect NIC-301 Technical Reference Manual Copyright © 2006-2010 ARM. All rights reserved.

Contextual Info: Intel Xeon® Processor 7400 Series Specification Update December 2010 Reference Number: 320336-008 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. EXCEPT AS PROVIDED IN INTEL'S TERMS AND CONDITIONS OF SALE FOR SUCH PRODUCTS, INTEL ASSUMES NO LIABILITY WHATSOEVER, AND INTEL DISCLAIMS

S29WS128N

Abstract: sample code read and write flash memory spansion S29WS064N S29WS256N S29WS-N S70WS512N00 TSB084 sample code write buffer spansion SA047-SA050
Contextual Info: S70WS512N00 Based MCPs Same-Die Stacked Multi-Chip Product MCP 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory ADVANCE INFORMATION Data Sheet Notice to Readers: This document states the current technical specifications

MICRON BGA PART MARKING

Abstract: amd catalog MT49H32M18C
Contextual Info: 576Mb: x9, x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM 2 Features SIO RLDRAM 2 MT49H32M18C – 32 Meg x 18 x 8 banks MT49H64M9C – 64 Meg x 9 x 8 banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate • 38.4 Gb/s peak bandwidth (x18 at 533 MHz clock

LG E500

Abstract: marking 53B MPC8560CE MPC8560 tsec application DDR12 MPC8560
Contextual Info: Freescale Semiconductor MPC8560CE Rev 0.2, 10/2004 Errata MPC8560 PowerQUICC III Device Errata This document details all known silicon errata for the MPC8560 PowerQUICC III device. It also includes errata for the e500 core. Table 1 provides a revision history for this document.

TRANSISTOR BFW 11 pin diagram

Abstract: 064N S29WS064N S29WS128N S29WS256N WS128N pin diagram of TRANSISTOR BFW 11
Contextual Info: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory Data Sheet PRELIMINARY General Description The Spansion S29WS256/128/064N are MirrorbitTM Flash products fabricated on 110 nm process technology. These burst

SA047

Contextual Info: S29WS-N MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory Data Sheet PRELIMINARY General Description The Spansion S29WS256/128/064N are MirrorbitTM Flash products fabricated on 110 nm process technology. These burst

SA047

Contextual Info: S29WS064R 64 Megabit 4M x 16-bit , CMOS 1.8 Volt-Only Simultaneous Read/Write, Burst-mode MirrorBit Flash Memory Data Sheet (Advance Information) S29WS064R Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion

MT49H32M18C

Contextual Info: 576Mb: x9, x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features SIO RLDRAM II MT49H32M18C – 32 Meg x 18 x 8 banks MT49H64M9C – 64 Meg x 9 x 8 banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate • 38.4 Gb/s peak bandwidth (x18 at 533 MHz clock

Contextual Info: PRELIMINARY Am42BDS6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM Am29BDS640G 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Burst Mode Flash Memory and 8 Mbit (512 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS • Power dissipation (typical values, CL = 30 pF)

Am54BDS128AGB89I

Contextual Info: ADVANCE INFORMATION Am54BDS128AG Stacked Multi-Chip Package MCP Flash Memory and SRAM Two Am29BDS640G 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Burst Mode Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS

smd transistor marking HT1

Abstract: MT49H16M18C MICRON BGA PART MARKING RLDRAM smd MARKING dk transistor SMD DK rc A202 A212 A221 TN-00-08
Contextual Info: 288Mb: x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features SIO RLDRAM II MT49H16M18C – 16 Meg x 18 x 8 banks Features Figure 1: • 400 MHz DDR operation 800 Mb/s/pin data rate • 28.8 Gb/s peak bandwidth (x18 at 400 MHz clock frequency) • Organization

Contextual Info: Am29BDS640G Data Sheet October 1, 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

Contextual Info: PRELIMINARY Am42BDS6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM Am29BDS640G 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Burst Mode Flash Memory and 8 Mbit (512 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS • Power dissipation (typical values, CL = 30 pF)

Contextual Info: Am29BDS640G Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

SA059

Abstract: 0x555 SA041 SA047
Contextual Info: S29WS064R 64 Megabit 4M x 16-bit , CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode MirrorBit Flash Memory Data Sheet (Advance Information) S29WS064R Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion