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    Vishay Dale CRCW120615R0FKEAC

    RES 15 OHM 1% 1/4W 1206
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    Vishay Dale CRCW120615R0FKEAHP

    RES SMD 15 OHM 1% 3/4W 1206
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    Vishay Dale CRCW120615R0FKEA

    RES SMD 15 OHM 1% 1/4W 1206
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    Vishay Intertechnologies CRCW120615R0FKEA

    D25/CRCW1206 100 15R 1% ET1 e3 - Tape and Reel (Alt: CRCW120615R0FKEA)
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    CRCW1206-HP 100 15R 1% ET1 E3 - Tape and Reel (Alt: CRCW120615R0FKEAHP)
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    CRCW120615R0FKEA Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CRCW120615R0FKEA Vishay RESISTOR,FIXED,FILM,CHIP Original PDF
    CRCW120615R0FKEAC Vishay Dale Resistors - Chip Resistor - Surface Mount - RES 15 OHM 1% 1/4W 1206 Original PDF
    CRCW120615R0FKEAHP Vishay Dale Resistors - Chip Resistor - Surface Mount - RES SMD 15 OHM 1% 3/4W 1206 Original PDF

    CRCW120615R0FKEA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    G2225X7R225KT3AB

    Abstract: MRF6VP2600KH TUI-lf-9 UT-141C-25 DVB-T Schematic tuo-4 MRF6VP2600H AN1955 ATC100B470JT500XT MRF6VP2600HR6
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 5, 5/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.


    Original     		PDF MRF6VP2600H MRF6VP2600HR6 G2225X7R225KT3AB MRF6VP2600KH TUI-lf-9 UT-141C-25 DVB-T Schematic tuo-4 MRF6VP2600H AN1955 ATC100B470JT500XT MRF6VP2600HR6

    schematic diagram 48V solar charge controller

    Abstract: Solar mppt schematic schematic diagram 12V solar charge controller Solar Charge Controller circuit PWM 12v Solar Charge Controller diagram solar PWM charge controller circuit Diagram schematic diagram 48V solar controller Solar Charge Controller mppt for 1.5 KW Solar Charge Controller Circuit PWM schematic diagram 12V solar controller
    Text: Design Note – DN06054/D Reference Design for Solar Power MPPT Controller Device Application Input Voltage NCP1294 Solar Street Lighting 12-24 V Output Voltage A 13.2V Output Current A Topology 2.0A Table 1: NCP1294 Output Statistics Characteristic Output Voltage


    Original     		PDF DN06054/D NCP1294 NCP1294 schematic diagram 48V solar charge controller Solar mppt schematic schematic diagram 12V solar charge controller Solar Charge Controller circuit PWM 12v Solar Charge Controller diagram solar PWM charge controller circuit Diagram schematic diagram 48V solar controller Solar Charge Controller mppt for 1.5 KW Solar Charge Controller Circuit PWM schematic diagram 12V solar controller

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V13250H Rev. 1, 7/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V13250HR3 MRF6V13250HSR3 RF Power transistors designed for CW and pulsed applications operating at


    Original     		PDF MRF6V13250H MRF6V13250HR3 MRF6V13250HSR3 MRF6V13250HR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9125N Rev. 5, 8/2008 MRF6S9125NR1/NBR1 replaced by MRFE6S9125NR1/NBR1. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistors MRF6S9125NR1 MRF6S9125NBR1 Designed for broadband commercial and industrial applications with


    Original     		PDF MRF6S9125N MRF6S9125NR1/NBR1 MRFE6S9125NR1/NBR1. PCN12895 MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125NR1

    mrf6v13250h

    Abstract: ATC800B101JT500XT T491X226K035AT AN1955 MRF6V13250HS MRF6V13
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V13250H Rev. 1, 7/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V13250HR3 MRF6V13250HSR3 RF Power transistors designed for CW and pulsed applications operating at


    Original     		PDF MRF6V13250H MRF6V13250HR3 MRF6V13250HSR3 MRF6V13250HR3 mrf6v13250h ATC800B101JT500XT T491X226K035AT AN1955 MRF6V13250HS MRF6V13

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25L Rev. 0, 10/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25LR5 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to


    Original     		PDF MRFE6VS25L MRFE6VS25LR5

    D260-4118-0000

    Abstract: MRFE6VS25L MRFE6VS25GNR1 transistor J128 2422D 21-201-J ATC100B2R7BT500XT crcw12065k60f avx c0805c103k5rac MRFE6VS25NR1
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 1, 12/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to


    Original     		PDF MRFE6VS25N MRFE6VS25NR1 MRFE6VS25GNR1 MRFE6VS25N D260-4118-0000 MRFE6VS25L MRFE6VS25GNR1 transistor J128 2422D 21-201-J ATC100B2R7BT500XT crcw12065k60f avx c0805c103k5rac

    TB245

    Abstract: No abstract text available
    Text: M March 5, 20155 T TB245 Frequenccy=760-960MHz Pout=140W Gaain=13dB Vd ds=28Vdc Id dq=0.8A Efficciency=40% % L LB2501 PH: 8805 484-4210 FAX:(805)48 84-3393 1110 Avenida Acasso, Camarillo CA C 93012 ww ww.polyfet.com m March 5, 2015 160.0 16.0 120.0 15.0 80.0


    Original     		PDF TB245 760-960MHz 28Vdc LB2501 TB245 28Vdc, 1111P102JP500X 1111N200GW501X

    TUI-lf-9

    Abstract: ATC700B392JT50X
    Text: Document Number: MMRF1016H Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1016HR5 This 600 W RF power LDMOS transistor is designed primarily for wideband RF power amplifiers with frequencies up to 500 MHz. This device is unmatched


    Original     		PDF MMRF1016H MMRF1016HR5 7/2014Semiconductor, TUI-lf-9 ATC700B392JT50X

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1005H Rev. 0, 12/2013 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MMRF1005HR5 MMRF1005HSR5 RF power transistors designed for CW and pulse applications operating at


    Original     		PDF MMRF1005H MMRF1005HR5 MMRF1005HSR5 MMRF1005HR5

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 5.1, 7/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.


    Original     		PDF MRF6VP2600H MRF6VP2600HR6

    MRF6VP2600KH

    Abstract: TUI-lf-9 MRF6VP2600H ATC700B392JT50X ATC100B221 transistor j380 88-108 88-108 rf amplifier UT-141C-25 5093nw
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 5.1, 7/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.


    Original     		PDF MRF6VP2600H 20ficers, MRF6VP2600HR6 MRF6VP2600KH TUI-lf-9 MRF6VP2600H ATC700B392JT50X ATC100B221 transistor j380 88-108 88-108 rf amplifier UT-141C-25 5093nw

    TB230

    Abstract: a/SMD resistor 805
    Text: July 16, 2014 TB230 Frequency = 20-1000MHz Pout = 100W Gain = 15dB Typical Vds = 28Vdc Idq = 0.8A Efficiency = 30-50% LB2401 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com July 16, 2014 PH:(805)484-4210 FAX:(805)484-3393


    Original     		PDF TB230 20-1000MHz 28Vdc LB2401 484-33R6 85mil 100nF TB230 a/SMD resistor 805

    MRF6S9125N

    Abstract: CRCW121015R0FKEA atc100b6r2 A114 A115 C101 JESD22 MRF6S9125NBR1 MRF6S9125NR1 PCN12895
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9125N Rev. 5, 8/2008 RF Power Field Effect Transistors MRF6S9125NR1 MRF6S9125NBR1 N - Channel Enhancement - Mode Lateral MOSFETs LIFETIME BUY Designed for broadband commercial and industrial applications with


    Original     		PDF MRF6S9125N MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125NR1 MRF6S9125N CRCW121015R0FKEA atc100b6r2 A114 A115 C101 JESD22 MRF6S9125NBR1 PCN12895

    TB234

    Abstract: 1111X104KW500
    Text: May 27, 2014 TB234 Frequency = 500-1000MHz Pout = 100W Gain = 16dB Vds = 28Vdc Idq = 0.8A Efficiency = 40% LB2401 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com May 27, 2014 PH:(805)484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012


    Original     		PDF TB234 500-1000MHz 28Vdc LB2401 200pF 85mil 70mil 100nF TB234 1111X104KW500

    D260-4118-0000

    Abstract: 0119A 0190A
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25L Rev. 0, 10/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25LR5 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to


    Original     		PDF MRFE6VS25L MRFE6VS25LR5 D260-4118-0000 0119A 0190A

    ATC800B1

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V13250H Rev. 0, 6/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V13250HR3 MRF6V13250HSR3 RF Power transistors designed for applications operating at 1300 MHz.


    Original     		PDF MRF6V13250H MRF6V13250HR3 MRF6V13250HSR3 ATC800B1

    TGA2501

    Abstract: TGA2501-GSG
    Text: TGA2501-GSG 2.8 Watt 6-18 GHz Power Amplifier Applications •  X- and Ku-band Point-to-Point Radio ECCM Product Features     Functional Block Diagram Frequency Range: 6 - 18 GHz Saturated Output Power: 34.5 dBm Small Signal Gain: 26 dB


    Original     		PDF TGA2501-GSG TGA2501-GSG TGA2501

    300 watts power amplifier layout rms

    Abstract: capacitor 15 F 50 VDC Chemi-Con DATE CODES A114 A115 C101 JESD22 MRF6S9125N MRF6S9125NBR1 MRF6S9125NR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9125N Rev. 5, 8/2008 MRF6S9125NR1/NBR1 replaced by MRFE6S9125NR1/NBR1. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistors MRF6S9125NR1 MRF6S9125NBR1 Designed for broadband commercial and industrial applications with


    Original     		PDF MRF6S9125N MRF6S9125NR1/NBR1 MRFE6S9125NR1/NBR1. PCN12895 MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125NR1 300 watts power amplifier layout rms capacitor 15 F 50 VDC Chemi-Con DATE CODES A114 A115 C101 JESD22 MRF6S9125N MRF6S9125NBR1