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    CR DIODE SMD Search Results

    CR DIODE SMD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLM15PX121BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 120ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX181SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 180ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM21HE802SN1L Murata Manufacturing Co Ltd FB SMD 0805inch 8000ohm NONAUTO Visit Murata Manufacturing Co Ltd
    BLM15PX330BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 33ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX600SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 60ohm POWRTRN Visit Murata Manufacturing Co Ltd

    CR DIODE SMD Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SEMPO ELECTRONIC

    Abstract: DT 94 SMDT-130 SMDT-130-08 SMDT-130-12 SMDT-130-14 SOFT starter 13018
    Text: SMDT-130 Diode-Thyristor Module Type SMDT-130-08 SMDT-130-12 SMDT-130-14 SMDT-130-16 SMDT-130-18 µ ITM, ITSM, di/dt cr (dv/dt)cr V TM IFSM IFM VTÎ rT 900 1300 1500 1700 1900 800 1200 1400 1600 1800 tq VGT IGT TVJM Visol RthJC O kA µ Type ITAVM, ITRMS, T


    Original     		SMDT-130 SMDT-130-08 SMDT-130-12 SMDT-130-14 SMDT-130-16 SMDT-130-18 SMDT-130 SEMPO ELECTRONIC DT 94 SMDT-130-08 SMDT-130-12 SMDT-130-14 SOFT starter 13018 PDF

    DT 94

    Abstract: SMDT-160 SMDT-160-08 SMDT-160-12 SMDT-160-14
    Text: SMDT-160 Diode-Thyristor Module Type SMDT-160-08 SMDT-160-12 SMDT-160-14 SMDT-160-16 SMDT-160-18 µ ITM, ITSM, di/dt cr (dv/dt)cr V TM IFSM IFM C kA µ Type ITAVM, ITRMS, T C IFAVM IFRMS A/ s V/ s SMDT-160 165 355 85 4.8 150 500 A A O V VTÎ A V VRRM , VDRM


    Original     		SMDT-160 SMDT-160-08 SMDT-160-12 SMDT-160-14 SMDT-160-16 SMDT-160-18 SMDT-160 DT 94 SMDT-160-08 SMDT-160-12 SMDT-160-14 PDF

    BZX284-B11 T/R

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Voltage regulator diodes BZX284 series FEATURES DESCRIPTION • Total power dissipation: max. 400 mW Low-power voltage regulator diodes in a small ceramic SMD SOD110 package. The diodes are available in the normalized E24 ±2% BZX284-B and ±5%


    OCR Scan     		BZX284 OD110 BZX284-B) BZX284-C) MAM219 OD110) BZX284-B11 T/R PDF

    SMD transistor UY

    Abstract: smd optocoupler cop 200 transistor irf 630 transistor smd CR gy 615 smd 152,GY CR50TEA dual led 660 940 red infrared smd transistor GY smd rgb
    Text: LIGHT EMITTING CHARACTERISTICS ELCOS GmbH, well known as the first manufacturer of SMD components in Optoelectronics, has now completed it’s portfolio from the smallest single colour-package the CERLED onto the “semicustom” multichip package (the EUROLED). Regarding Standard Products the policy of ceramic substrates and moulded encapsulation gave the


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SCHOTTKY BARRIER DIODE 10.4M09 °|SQUARE - PAK TO-263AB SMD) Packaged in 24nun Tape and : C10T* *Q Reel 4.BU39) C10T10Q C10T10Q-11A 1.4(.055) _J ÎIOTT f 1060417) I 9.6(.378) 8.50335) 4.0(.157) 3.0(.118) 10.1(.398)l o Tabless T0-220: C10T*»Q-11A ° Dual Diodes — Cathode Common


    OCR Scan     		O-263AB 24nun C10T10Q C10T10Q-11A T0-220: Q-11A C10T09Q C10T09Q-11A 1A/90â bblS153 PDF

    Simple PSpice Models Let You Simulate Common Battery

    Abstract: 220 microfarad 12v capacitor inductors 33 micro henry transistor 2S D 716 inductors 10 micro henry 330 micro henry MEPCO electra 104 TANTALUM capacitor Cer cap 100uf 4600 fet transistor
    Text: TECHNICAL INFORMATION INCREASING RELIABILITY OF SMD TANTALUM CAPACITORS IN LOW IMPEDANCE APPLICATIONS by David Mattingly Applications Engineer Myrtle Beach, SC Abstract: High dv/dt conditions in low impedance circuits using surface mount tantalum capacitors is discussed.


    Original     		5M994-N Simple PSpice Models Let You Simulate Common Battery 220 microfarad 12v capacitor inductors 33 micro henry transistor 2S D 716 inductors 10 micro henry 330 micro henry MEPCO electra 104 TANTALUM capacitor Cer cap 100uf 4600 fet transistor PDF

    factors on which internal internal resistance of a cell depends experiment

    Abstract: Simple PSpice Models Let You Simulate Common Battery 104 TANTALUM capacitor nec capacitor 220 microfarad A 16V avx taj MOSFET 2906 100NS LTC1154 22UF 47UH
    Text: TECHNICAL INFORMATION INCREASING RELIABILITY OF SMD TANTALUM CAPACITORS IN LOW IMPEDANCE APPLICATIONS by David Mattingly Applications Engineer Myrtle Beach, SC Abstract: High dv/dt conditions in low impedance circuits using surface mount tantalum capacitors is discussed.


    Original     		5M994-N factors on which internal internal resistance of a cell depends experiment Simple PSpice Models Let You Simulate Common Battery 104 TANTALUM capacitor nec capacitor 220 microfarad A 16V avx taj MOSFET 2906 100NS LTC1154 22UF 47UH PDF

    LL4148 melf

    Abstract: BKC Semiconductors DSAIH0002549
    Text: LL4148 or MINI-MELF-SMD Silicon Switching Diode 1N4148UR-1 Applications 1N4148UR-1 BCP Used in general purpose applications, where performance, space and switching speed are important. This Best Commercial Practice part is assembled on the same exacting line as our /116 military level products.


    OCR Scan     		LL4148 1N4148UR-1 1N4148UR-1 LL-34/35 DO-35 Mil-S-19500/116 1N4148-1 DO-35glass LL4148 melf BKC Semiconductors DSAIH0002549 PDF

    Ceramic Capacitors 104

    Abstract: disc Piezoelectric Sensor piezoelectric shock sensor smd Active Filters "disc Piezoelectric Sensor TV flyback ferrite Capacitors 104 piezoelectric film sensor 104 Ceramic Disc Capacitors piezoelectric ceramic sensor
    Text: INDEX Minimum Quantity* Guide CHIP PRODUCTS 4-5 CHIP TYPE/SMD TYPE SELECTION GUIDE 6-8 EMI SUPPRESSION PRODUCTS / EMI FILTERS EMIFIL EMIFIL®/ EMIGUARD® RC/C MODULES FREQUENCY RANGE GUIDE.10 F E R R IT E CORE<5 r a I pn


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: iia / 20~ SCHOTTKY BARRIER DIODE 30v c Ìo tS Iq l-u a ° SQUARE - PAk [ TO-263AB (SMD Packaged in 24mm Tape and Reel : C10T*QL ° Tabless T0-220:CIOT*«QL-11A »Dual Diodes— Cathode Common 0 Low Forward Voltage Drop ° High Surge Capability 0 20 Volts thru 100 Volts


    OCR Scan     		O-263AB T0-220 QL-11A C10T02QL C10T02QL-11A C10T03QL C10T03QL-11A PDF

    Untitled

    Abstract: No abstract text available
    Text: □IXYS Advanced Technical Data Power Schottky Rectifier DSS 16 iFAV V RRM = 16 A = 35 - 45 V mm TO-220 AC TO-263 SMD S-Type V RSM V V 35 45 Symbol Test Conditions Maximum Ratings (per diode) rms Tc = 130°C; rectangular, d = 0.5 UsM tp = 10 ms Eas Ias = 1 5 A ; L = 1 8 0 h H ; T vj = 25°C ; non repetitive


    OCR Scan     		O-220 16-0035B 16-0045B O-263 1250C D-68623 PDF

    .24n50

    Abstract: xgh2 IXGH24N50BU1 IXGH24N60BU1
    Text: Preliminary data HiPerFAST IGBT with Diode IXGH24N50BU1 IXGH24N60BU1 V CES *C 25 VCE(sat) t. 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Combi Pack T0-247 SMD (24N*BU1 S) Symbol TestConditions I C (TAB) Maximum Ratings 24N50 24N60 v CES Tj = 25°C to 150°C


    OCR Scan     		IXGH24N50BU1 IXGH24N60BU1 T0-247 24N50 24N60 .24n50 xgh2 IXGH24N60BU1 PDF

    BZ 6V2

    Abstract: "Voltage Regulator Diodes" BZV55 Series smd diode UJ 64 A ST c6v8 BZV55
    Text: Product specification Philips Semiconductors Voltage regulator diodes BZV55 series FEATURES DESCRIPTION • Total power dissipation: max. 500 mW Low-power voltage regulator diodes in small hermetically sealed glass SOD 8OC SMD packages. The diodes are available in the normalized E24±2%


    OCR Scan     		BZV55 711005b BZ 6V2 "Voltage Regulator Diodes" BZV55 Series smd diode UJ 64 A ST c6v8 PDF

    smd diode marking F1

    Abstract: CDSV3-19-G smd KT2 smd marking G
    Text: C0A\CHir SMD Switching Diode S M D D io d e s S p e c ia lis t CDSV3-19-G/20-G/21-G High Speed RoHS Device % Features SO T -323 -F ast s w itching diode. 0 .0 8 7 2 . 2 0 0 .0 7 0 (1 .8 0 ) ' -S u rfa c e m ount package ideally fo r a u to m a tic insertion.


    OCR Scan     		CDSV3-19-G/20-G/21 OT-323 MIL-STD-750, CDSV3-19-G CDSV3-20-G CDSV3-21 200mA QW-B0025 CDSV3-19-G/20-G/21-G) smd diode marking F1 smd KT2 smd marking G PDF

    Untitled

    Abstract: No abstract text available
    Text: SMD ESD Protection Diode SMD Diodes Specialist CPDH3V3UP RoHS Device Features SOD-523 IEC61000-4-2 ESD ±15 kV(Contact),±20kV(Air). 0.051(1.30) 0.043(1.10) Working voltage: 3.3V Low leakage current. 0.033(0.85) 0.030(0.75) 0.014(0.35) 0.010(0.25) Low operating and clamping voltages.


    Original     		OD-523 IEC61000-4-2 OD523 MIL-STD-750 QW-BP022 PDF

    smd code marking e3

    Abstract: marking code E3 SMD diode DIODE smd marking E3 marking code E3 SMD smd code CR smd code marking sb diode smd marking 51 transistor smd marking 94 Diode marking code e3 SMD MARKING CODE 7 sb
    Text: SMD ESD Protection Diode SMD Diodes Specialist CPDH3V3UP-HF RoHS Device Features IEC61000-4-2 ESD ±15 kV(Contact),±20kV(Air). SOD-523 Working voltage: 3.3V Low leakage current. 0.008(0.20) REF 0.051(1.30) 0.043(1.10) Low operating and clamping voltages.


    Original     		IEC61000-4-2 OD-523 OD-523 MIL-STD-750, QW-JP018 smd code marking e3 marking code E3 SMD diode DIODE smd marking E3 marking code E3 SMD smd code CR smd code marking sb diode smd marking 51 transistor smd marking 94 Diode marking code e3 SMD MARKING CODE 7 sb PDF

    diode smd marking e3v3

    Abstract: cr diode smd SMD MARKING CODE 7 sb smd *7027 marking sb diode
    Text: SMD ESD Protection Diode SMD Diodes Specialist CPDU3V3UP RoHS Device Features IEC61000-4-2 ESD ±15 kV(Contact),±20kV(Air). 0603(1608) Working voltage: 3.3V 0.071(1.80) 0.063(1.60) Low leakage current. Low operating and clamping voltages. 0.039(1.00) 0.031(0.80)


    Original     		IEC61000-4-2 MIL-STD-750 U/0603 QW-A7027 diode smd marking e3v3 cr diode smd SMD MARKING CODE 7 sb smd *7027 marking sb diode PDF

    CPDH3V3UP

    Abstract: transistor smd marking 94 QW-BP022 diode smd marking e3v3 smd marking code pp MARKING KV SOD523 SMD CODE KW 1 smd code marking sb SMD MARKING CODE 7 sb smd 523
    Text: SMD ESD Protection Diode SMD Diodes Specialist CPDH3V3UP RoHS Device Features SOD-523 IEC61000-4-2 ESD ±15 kV(Contact),±20kV(Air). 0.051(1.30) 0.043(1.10) Working voltage: 3.3V Low leakage current. 0.033(0.85) 0.030(0.75) 0.014(0.35) 0.010(0.25) Low operating and clamping voltages.


    Original     		OD-523 IEC61000-4-2 OD-523 MIL-STD-750 QW-BP022 CPDH3V3UP transistor smd marking 94 QW-BP022 diode smd marking e3v3 smd marking code pp MARKING KV SOD523 SMD CODE KW 1 smd code marking sb SMD MARKING CODE 7 sb smd 523 PDF

    Untitled

    Abstract: No abstract text available
    Text: SMD ESD Protection Diode SMD Diodes Specialist CPDVR083V3U RoHS Device Features IEC61000-4-2 ESD ±15 kV(Contact),±20kV(Air). SOT-383F(VR8) Working voltage: 3.3V 0.086(2.20) 0.079(2.00) Low leakage current. Low operating and clamping voltages. Mechanical data


    Original     		CPDVR083V3U IEC61000-4-2 OT-383F MIL-STD-750 QW-BP027 OT-383F QW-BP027 PDF

    Untitled

    Abstract: No abstract text available
    Text: SMD ESD Protection Diode SMD Diodes Specialist CPDVR083V3P RoHS Device Features IEC61000-4-2 ESD ±15 kV(Contact),±20kV(Air). SOT-383F(VR8) Working voltage: 3.3V 0.086(2.20) 0.079(2.00) Low leakage current. Low operating and clamping voltages. Mechanical data


    Original     		CPDVR083V3P IEC61000-4-2 OT-383F MIL-STD-750 QW-A7017 OT-383F CPDVR083V3P PDF

    CPDVR083V3U

    Abstract: SOT-383F
    Text: SMD ESD Protection Diode SMD Diodes Specialist CPDVR083V3U RoHS Device Features IEC61000-4-2 ESD ±15 kV(Contact),±20kV(Air). SOT-383F(VR8) Working voltage: 3.3V 0.086(2.20) 0.079(2.00) Low leakage current. Low operating and clamping voltages. Mechanical data


    Original     		CPDVR083V3U IEC61000-4-2 OT-383F MIL-STD-750 QW-BP027 OT-383F CPDVR083V3U SOT-383F PDF

    CPDVR083V3UA-HF

    Abstract: No abstract text available
    Text: SMD ESD Protection Diode SMD Diodes Specialist CPDVR083V3UA-HF RoHS Device Features Halogen free. SOT-383F VR8 IEC61000-4-2 (ESD)±15kV(Contact),±20kV(Air). 0.086(2.20) 0.079(2.00) Working voltage: 3.3V Low leakage current. Low operating and clamping voltages.


    Original     		CPDVR083V3UA-HF OT-383F IEC61000-4-2 MIL-STD-750 OT-383F QW-G7023 CPDVR083V3UA-HF PDF

    Untitled

    Abstract: No abstract text available
    Text: SMD ESD Protection Diode SMD Diodes Specialist CPDVR083V3U RoHS Device Features IEC61000-4-2 ESD ±15 kV(Contact),±20kV(Air). SOT-383F(VR8) Working voltage: 3.3V 0.086(2.20) 0.079(2.00) Low leakage current. Low operating and clamping voltages. Mechanical data


    Original     		CPDVR083V3U IEC61000-4-2 OT-383F MIL-STD-750 OT-383F QW-A7019 PDF

    Untitled

    Abstract: No abstract text available
    Text: SMD ESD Protection Diode SMD Diodes Specialist CPDVR083V3U-HF RoHS Device Features Halogen free. SOT-383F VR8 IEC61000-4-2 (ESD)±15kV(Contact),±20kV(Air). 0.086(2.20) 0.079(2.00) Working voltage: 3.3V Low leakage current. Low operating and clamping voltages.


    Original     		CPDVR083V3U-HF OT-383F IEC61000-4-2 MIL-STD-750 OT-383F QW-G7016 PDF