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    CPD98V Search Results

    CPD98V Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CPD98V Central Semiconductor Schottky Diode Silicon High Current Schottky Diode Chip Original PDF

    CPD98V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    high current schottky diode

    Abstract: Schottky diode Die Schottky Diodes diode Schottky Diode Schottky diode wafer CPD98V
    Text: PROCESS CPD98V Central Schottky Diode Semiconductor Corp. Silicon High Current Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.1 MILS Anode Bonding pad Area 6.3 x 6.3 MILS Top Side Metalization Al - 30,000Å


    Original     		PDF CPD98V high current schottky diode Schottky diode Die Schottky Diodes diode Schottky Diode Schottky diode wafer CPD98V

    "Schottky Diode"

    Abstract: CPD98V high current schottky diode diode silicon
    Text: PROCESS CPD98V Schottky Diode Silicon High Current Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 5.4 x 5.4 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å


    Original     		PDF CPD98V 13-August "Schottky Diode" CPD98V high current schottky diode diode silicon

    CPD98V

    Abstract: high current schottky diode
    Text: PROCESS CPD98V Schottky Diode Silicon High Current Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 5.4 x 5.4 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å


    Original     		PDF CPD98V 22-March CPD98V high current schottky diode

    BF244 datasheet

    Abstract: 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910
    Text: Index Industry Part Number Central Process No. Page # Industry Part Number 1N456 .CPD64 . 216 1N456A.CPD64 . 216 1N457 .CPD64 . 216


    Original     		PDF 1N456 CPD64 1N456A. 1N457 1N457A. 1N458 BF244 datasheet 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910

    UJT 2n3904

    Abstract: transistor 2N4033 ujt 2N6027 2n4209 datasheet mj15003 equivalent transistor 2N5401 mj15004 2N4393 MJ15003 MJ15004 BAV45
    Text: Selection Guide Page Small Signal Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Bipolar Power Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Programmable UJT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24


    Original     		PDF

    2N2645

    Abstract: cpd83v-cmpd7000-ws 1N3070 CPZ25 CPD83V-1N4148-WN CP191V-2N2222A-WN CPZ25-CMZ5937B-WR CPD83V CPD83V-1N4148-WS CPD98V
    Text: PCN #: 119 Notification Date: 16 December 2010 mailto:processchange@centralsemi.com http://www.centralsemi.com/processchange Product / Process Change Notice Parts Affected: Small signal discrete semiconductor wafers. Extent of Change: Wafer diameter has been changed from 4” to 5”.


    Original     		PDF CPD83V-1N914-WN CPD83V-1N914A-WN CPD83V-CMPD7000-WS CPD83V-1N4148-WS CPD83V-1N914-WR CPD92X-CMPD6263-WR CPZ25-CMZ5937B-WN CPZ25-CMZ5940B-WN CPZ25-1N4752A-WN CPZ25-1N5918B-WN 2N2645 cpd83v-cmpd7000-ws 1N3070 CPZ25 CPD83V-1N4148-WN CP191V-2N2222A-WN CPZ25-CMZ5937B-WR CPD83V CPD83V-1N4148-WS CPD98V