CPD77X Search Results

Contextual Info: PROCESS CPD77X Schottky Rectifier 3 Amp Schottky Rectifier Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 61 x 61 MILS Die Thickness 5.9 MILS Anode Bonding Pad Area 55 x 55 MILS Top Side Metalization Ti/Ag - 2,500Å/30,000Å Back Side Metalization

2N2645

Abstract: cpd83v-cmpd7000-ws 1N3070 CPZ25 CPD83V-1N4148-WN CP191V-2N2222A-WN CPZ25-CMZ5937B-WR CPD83V CPD83V-1N4148-WS CPD98V
Contextual Info: PCN #: 119 Notification Date: 16 December 2010 mailto:processchange@centralsemi.com http://www.centralsemi.com/processchange Product / Process Change Notice Parts Affected: Small signal discrete semiconductor wafers. Extent of Change: Wafer diameter has been changed from 4” to 5”.