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    CP316V Search Results

    CP316V Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CP316V Central Semiconductor Small Signal Transistors NPN - High Voltage Transistor Chip Original PDF

    CP316V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor equivalent 2n5551

    Abstract: 2N5551 circuit AL transistor 2N5551 CMPT5551 CP316V CXT5551 CZT5551 2n5551 chip
    Text: PROCESS CP316V Small Signal Transistors NPN - High Voltage Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 20 x 20 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 4.0 x 4.0 MILS Emitter Bonding Pad Area 4.7 x 4.7 MILS Top Side Metalization


    Original     		PDF CP316V CMPT5551 CXT5551 CZT5551 2N5551 22-March transistor equivalent 2n5551 2N5551 circuit AL transistor 2N5551 CMPT5551 CP316V CXT5551 CZT5551 2n5551 chip

    2N5551

    Abstract: CMPT5551 CP316V CXT5551 CZT5551
    Text: PROCESS CP316V Small Signal Transistors NPN - High Voltage Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 20 x 20 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 4.0 x 4.0 MILS Emitter Bonding Pad Area 4.7 x 4.7 MILS Top Side Metalization


    Original     		PDF CP316V CMPT5551 CXT5551 CZT5551 2N5551 22-March 2N5551 CMPT5551 CP316V CXT5551 CZT5551

    CZT5551

    Abstract: 2N5551 CMPT5551 CP316V CXT5551 2n5551 chip
    Text: PROCESS CP316V Small Signal Transistors NPN - High Voltage Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 20 x 20 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 4.0 x 4.0 MILS Emitter Bonding Pad Area 4.7 x 4.7 MILS Top Side Metalization


    Original     		PDF CP316V CMPT5551 CXT5551 CZT5551 2N5551 CZT5551 2N5551 CMPT5551 CP316V CXT5551 2n5551 chip

    transistor equivalent CT 2n5551

    Abstract: CP316V-2N5551-CT 2N5832 CMLT5551 CMLT5554 CMPT5551 CMPT5551E CMUT5551 CP316V 2n5551
    Text: PCN #: 118 Notification Date: 19 October 2010 mailto:processchange@centralsemi.com http://www.centralsemi.com/processchange Product / Process Change Notice Parts Affected: Chip process CP316V, NPN high voltage transistors, wafers, and die in chip form. Extent of Change:


    Original     		PDF CP316V, CP316V CP336V CP316V-2N5551-CTAN CP316V-2N5551-CT CP316V-2N5551-WN CMLT5551 CMLT5554 CMPT5551 CMPT5551E transistor equivalent CT 2n5551 CP316V-2N5551-CT 2N5832 CMLT5551 CMLT5554 CMPT5551 CMPT5551E CMUT5551 2n5551

    CP588V

    Abstract: CPD76 CPD96 CP-392V CP307 CP188 CP191 CPD48 CPD80 CPD91
    Text: PCN #: 105 Notification Date: 24 November 2004 145 Adams Avenue Hauppauge, New York 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 Mailto: processchange@centralsemi.com http://www.centralsemi.com/processchange Process Change Notice Parts Affected: Small signal discrete semiconductors, wafers, and die in chip form.


    Original     		PDF CPD48 CPD76 CPD78 CPD80 CPD83 CPD88 CPD91 CPD92 CPD96 CP188 CP588V CPD76 CPD96 CP-392V CP307 CP188 CP191 CPD48 CPD80 CPD91

    BF244 datasheet

    Abstract: 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910
    Text: Index Industry Part Number Central Process No. Page # Industry Part Number 1N456 .CPD64 . 216 1N456A.CPD64 . 216 1N457 .CPD64 . 216


    Original     		PDF 1N456 CPD64 1N456A. 1N457 1N457A. 1N458 BF244 datasheet 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910

    UJT 2n3904

    Abstract: transistor 2N4033 ujt 2N6027 2n4209 datasheet mj15003 equivalent transistor 2N5401 mj15004 2N4393 MJ15003 MJ15004 BAV45
    Text: Selection Guide Page Small Signal Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Bipolar Power Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Programmable UJT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24


    Original     		PDF

    2N2645

    Abstract: cpd83v-cmpd7000-ws 1N3070 CPZ25 CPD83V-1N4148-WN CP191V-2N2222A-WN CPZ25-CMZ5937B-WR CPD83V CPD83V-1N4148-WS CPD98V
    Text: PCN #: 119 Notification Date: 16 December 2010 mailto:processchange@centralsemi.com http://www.centralsemi.com/processchange Product / Process Change Notice Parts Affected: Small signal discrete semiconductor wafers. Extent of Change: Wafer diameter has been changed from 4” to 5”.


    Original     		PDF CPD83V-1N914-WN CPD83V-1N914A-WN CPD83V-CMPD7000-WS CPD83V-1N4148-WS CPD83V-1N914-WR CPD92X-CMPD6263-WR CPZ25-CMZ5937B-WN CPZ25-CMZ5940B-WN CPZ25-1N4752A-WN CPZ25-1N5918B-WN 2N2645 cpd83v-cmpd7000-ws 1N3070 CPZ25 CPD83V-1N4148-WN CP191V-2N2222A-WN CPZ25-CMZ5937B-WR CPD83V CPD83V-1N4148-WS CPD98V