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    Untitled

    Abstract: No abstract text available
    Text: PROCESS CP303X Small Signal Transistor NPN - High Current Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 22 x 22 MILS Die Thickness 5.9 MILS Base Bonding Pad Area 3.7 x 3.7 MILS Emitter Bonding Pad Area 4.2 x 4.2 MILS Top Side Metalization


    Original     		CP303X MPS8099 MPSA06 30-August PDF

    MCP3043

    Abstract: MCP3033
    Text: ÖUALITY TECHNOLOGIES CORP flfl D~~| 74bfcifl51 □ □ □ E c153 b J ~ 88D 02953 ^GENERAL INSTRUMENT I 6.86 .270 6.35 (.250) WWW 8.89 (.350) 0.36 (.014) 1.78 (.070) REF 7.62 (.300) REF 8.38 (.330) ~7 15° MAX - J 0.20 (.008) \ 3.94 (.155) t 4 9 S | 195)


    OCR Scan     		74bfcifl51 MCP3032 MCP3033 MCP3042 MGP3043 MCP304X MCP3043 MCP3033 PDF