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    COOLER THERMISTOR APD Search Results

    COOLER THERMISTOR APD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NR8360JP-BC-AZ Renesas Electronics Corporation φ 30 μm InGaAs Avalanche Photo Diode 14-PIN DIP Module With TEC Visit Renesas Electronics Corporation
    NR8800FS-CB-AZ Renesas Electronics Corporation φ 80 μm InGaAs Avalanche Photo Diode Module for OTDR Applications Visit Renesas Electronics Corporation
    NR8300FP-CC-AZ Renesas Electronics Corporation 1000 to 1600 nm Optical Fiber Communications φ 30 µm InGaAs Avalanche Photo Diode Module Visit Renesas Electronics Corporation
    NR8800FS-CB-AZ/SH Renesas Electronics Corporation φ 80 μm InGaAs Avalanche Photo Diode Module for OTDR Applications Visit Renesas Electronics Corporation
    TMP6131ELPGMQ1 Texas Instruments Automotive grade, silicon-based linear thermistor with a positive temperature coefficient (PTC) Visit Texas Instruments Buy

    COOLER THERMISTOR APD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    InGaas PIN photodiode, 1550 nec

    Abstract: APD 1550 nm APD for fiber test InGaAs apd photodiode InGaas APD photodiode, 1550 sensitivity apd 1550 OTDR pin Photodiode 1550 nm NR8360JP-BC InGaAs photodiode 1310 1550 InGaas PIN photodiode, 1550 sensitivity application
    Text: PRELIMINARY DATA SHEET NEC's ø30 µm InGaAs APD IN DIP PACKAGE NR8360JP-BC FOR OTDR APPLICATION FEATURES DESCRIPTION • HIGH QUANTUM EFFICIENCY: η = 85 % @ λ = 1310 nm η = 80 % @ λ = 1550 nm NEC's NR8360JP-BC is an InGaAs avalanche photodiode module with single mode fiber. A thermoelectric cooler is


    Original     		PDF NR8360JP-BC NR8360JP-BC 14-PIN InGaas PIN photodiode, 1550 nec APD 1550 nm APD for fiber test InGaAs apd photodiode InGaas APD photodiode, 1550 sensitivity apd 1550 OTDR pin Photodiode 1550 nm InGaAs photodiode 1310 1550 InGaas PIN photodiode, 1550 sensitivity application

    photodiode 1550nm nep

    Abstract: No abstract text available
    Text: InGaAs Avalanche Photodiode on TEC, Preamplifier Modules MICROELECTRONICS 264-339759-VAR Description CMC Electronics’ 264-339759 Series are using either a InGaAs APD with an ionization ratio of 0.2 or a Silion APD with an ionization ratio of 0.02. The APD is coupled to a Gasfet input


    Original     		PDF 264-339759-VAR 12lead 200um] 200um, Opto759-VAR photodiode 1550nm nep

    NR8360JP-BC

    Abstract: InGaAs apd photodiode C10535E C11531E NR8360JP-BC-AZ X13769X CEL avalanche photodiode ingaas ghz B3350
    Text: PHOTO DIODE NR8360JP-BC φ 30 µm InGaAs AVALANCHE PHOTO DIODE 14-PIN DIP MODULE WITH TEC DESCRIPTION The NR8360JP-BC is an InGaAs avalanche photodiode module with single mode fiber. A thermoelectric cooler is integrated enabling the temperature control of the APD chip. It is designed for long-reach optical communications and


    Original     		PDF NR8360JP-BC 14-PIN NR8360JP-BC InGaAs apd photodiode C10535E C11531E NR8360JP-BC-AZ X13769X CEL avalanche photodiode ingaas ghz B3350

    InGaAs apd photodiode

    Abstract: C10535E C11531E NR8360JP-BC
    Text: PRELIMINARY DATA SHEET PHOTO DIODE NR8360JP-BC φ 30 µm InGaAs AVALANCHE PHOTO DIODE 14-PIN DIP MODULE WITH TEC DESCRIPTION The NR8360JP-BC is an InGaAs avalanche photodiode module with single mode fiber. A thermoelectric cooler is integrated enabling the temperature control of the APD chip. It is designed for long-reach optical communications


    Original     		PDF NR8360JP-BC 14-PIN NR8360JP-BC InGaAs apd photodiode C10535E C11531E

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET PHOTO DIODE NR8360JP-BC φ 30 m InGaAs AVALANCHE PHOTO DIODE 14-PIN DIP MODULE WITH TEC DESCRIPTION The NR8360JP-BC is an InGaAs avalanche photodiode module with single mode fiber. A thermoelectric cooler is integrated enabling the temperature control of the APD chip. It is designed for long-reach optical communications and


    Original     		PDF NR8360JP-BC 14-PIN NR8360JP-BC

    PerkinElmer tr 1700

    Abstract: PerkinElmer Avalanche Photodiode
    Text: Features and Benefits PerkinElmer’s new family of APD modules features built in amplifier and thermoelectric cooler. They are ideal for demanding LIDAR and range-finding applications. Ultra low noise equivalent power NEP Introduction The new LLAM series of avalanche


    Original     		PDF 12-lead DTS0108P PerkinElmer tr 1700 PerkinElmer Avalanche Photodiode

    NR8360JP-BC

    Abstract: datasheet apd 1550 InGaAs apd photodiode apd 1550 OTDR avalanche photodiode ingaas ghz CEL avalanche photodiode ingaas ghz cooler thermistor APD InGaAs APD photodiode 1550
    Text: PRELIMINARY DATA SHEET ø30 µm InGaAs AVALANCHE PHOTO DIODE NR8360JP-BC 14-PIN DIP MODULE WITH TEC FEATURES DESCRIPTION • HIGH QUANTUM EFFICIENCY: η = 85 % @ λ = 1310 nm η = 80 % @ λ = 1550 nm The NR8360JP-BC is an InGaAs avalanche photodiode module with single mode fiber. A thermoelectric cooler is integrated


    Original     		PDF NR8360JP-BC 14-PIN NR8360JP-BC datasheet apd 1550 InGaAs apd photodiode apd 1550 OTDR avalanche photodiode ingaas ghz CEL avalanche photodiode ingaas ghz cooler thermistor APD InGaAs APD photodiode 1550

    Untitled

    Abstract: No abstract text available
    Text: PGA-200 Cooled Single Photon Counting Avalanche Photodiode - Discrete The Princeton Lightwave SPAD is an InGaAs/InP avalanche photodetector designed specifically for single photon counting applications. The device is intended for use at pulsed voltage biases above


    Original     		PDF PGA-200 6529E-03, 2102E-04, 1874E-09

    cooler thermistor APD

    Abstract: 3959 8-pin sar3500
    Text: Silicon Avalanche Photodiode SAR3500 DESCRIPTION The SAR3500 is based on a “reach-through” structure for excellent quantum efficiency and high speed. The APD is hermetically sealed in a modified TO-8 package. The SAR3500 is also available in a hermetically sealed


    Original     		PDF SAR3500 SAR3500 cooler thermistor APD 3959 8-pin

    Untitled

    Abstract: No abstract text available
    Text: Silicon Avalanche Photodiode SAR3500 DESCRIPTION The SAR3500 is based on a “reach-through” structure for excellent quantum efficiency and high speed. The APD is hermetically sealed in a modified TO-8 package. The SAR3500 is also available in a hermetically sealed


    Original     		PDF SAR3500 SAR3500

    Untitled

    Abstract: No abstract text available
    Text: PGA-308 Cooled Single Photon Counting Avalanche Photodiode – Fiber Pigtailed The Princeton Lightwave SPAD is an InGaAs/InP avalanche photodetector designed specifically for single photon counting applications. The device is intended for use at pulsed voltage biases above the


    Original     		PDF PGA-308

    photodiode InGaAs NEP

    Abstract: No abstract text available
    Text: Receiver TIA with TEC MICROELECTRONICS 200 MHz , 200 m InGaAs APD Avalanche Photodiode 264-339769-101 Description CMC Electronics’ 264-339769-101 is using a low noise InGaAs APD with an ionization ratio of 0.2 with a GaAs FET input transimpedance amplifier


    Original     		PDF 12-lead 200um] Opto769-101 photodiode InGaAs NEP

    PNA-208

    Abstract: No abstract text available
    Text: PNA-20X Negative Feedback Avalanche Diodes NFADs Product Features •      Single photon sensitivity SWIR (1000 – 1700 nm) response High gain and low noise Fast response with precise timing Compact and robust Simple readout


    Original     		PDF PNA-20X 8642E-03, 3085E-04, 0660E-07 PNA-208 PNA-208

    NR8360JP-BC

    Abstract: bc 7-25 InGaAs apd photodiode PX10160E
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE Si APD S2381 to S2385, S5139, S8611, S3884 Low bias operation, for 800 nm band Features Applications l Stable operation at low bias l High-speed response l High sensitivity and low noise l Spatial light transmission l Rangefinder • General ratings / Absolute maximum ratings


    Original     		PDF S2381 S2385, S5139, S8611, S3884 S2382 S5139 S8611 S2383

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE Si APD S2381 to S2385, S5139, S8611, S3884 Low bias operation, for 800 nm band Features Applications l Stable operation at low bias l High-speed response l High sensitivity and low noise l Spatial light transmission l Rangefinder • General ratings / Absolute maximum ratings


    Original     		PDF S2381 S2385, S5139, S8611, S3884 S2381 S2382 S5139 S8611 S2383

    S4315

    Abstract: S2382 S2383 S2383-10 S2384 S2385 S3884 S5139 S8611 S2381
    Text: PHOTODIODE Si APD S2381 to S2385, S5139, S8611, S3884 Low bias operation, for 800 nm band Features Applications l Stable operation at low bias l High-speed response l High sensitivity and low noise l Spatial light transmission l Rangefinder • General ratings / Absolute maximum ratings


    Original     		PDF S2381 S2385, S5139, S8611, S3884 S2381 S2382 S5139 S8611 S2383 S4315 S2382 S2383 S2383-10 S2384 S2385 S3884 S5139 S8611

    s2381

    Abstract: S2382 S2383-10 S2383 S2384 S2385 S3884 S5139 S8611
    Text: PHOTODIODE Si APD S2381 to S2385, S5139, S8611, S3884 Low bias operation, for 800 nm band Features Applications l Stable operation at low bias l High-speed response l High sensitivity and low noise l Spatial light transmission l Rangefinder • General ratings / Absolute maximum ratings


    Original     		PDF S2381 S2385, S5139, S8611, S3884 S2381 S2382 S5139 S8611 S2383 S2382 S2383-10 S2383 S2384 S2385 S3884 S5139 S8611

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE Si APD S2381 to S2385, S5139, S8611, S3884 Low bias operation, for 800 nm band Features Applications l Stable operation at low bias l High-speed response l High sensitivity and low noise l Spatial light transmission l Rangefinder • General ratings / Absolute maximum ratings


    Original     		PDF S2381 S2385, S5139, S8611, S3884 S2382 S5139 S8611 S2383

    S2381

    Abstract: S2382 S2383 S2383-10 S2384 S2385 S3884 S5139 S8611 Si apd photodiode rangefinder
    Text: PHOTODIODE Si APD S2381 to S2385, S5139, S8611, S3884 Low bias operation, for 800 nm band Features Applications l Stable operation at low bias l High-speed response l High sensitivity and low noise l Spatial light transmission l Rangefinder • General ratings / Absolute maximum ratings


    Original     		PDF S2381 S2385, S5139, S8611, S3884 S2381 S2382 S5139 S8611 S2383 S2382 S2383 S2383-10 S2384 S2385 S3884 S5139 S8611 Si apd photodiode rangefinder

    NDL5592

    Abstract: InGaAs apd photodiode NDL5506P NDL5506PC NDL5506PS NDL5506PSC NDL5530 NDL5530C
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    NDL5516PC

    Abstract: NDL5592 InGaAs apd photodiode NDL5500 NDL5500C NDL5516P NDL5520C NDL5530 NDL5530C
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    10 gb laser diode

    Abstract: E2560S34 70002 E2561H53 E2561H54 E2561H55 E2561H56 E2561H57 E2561H58 E2561H59
    Text: Data Sheet March 2003 E2561-Series 10 Gb/s EML Modules for up to 80 km Transmission Description Tri Qu int OP TO EL CT 10 RO N Gb /s L 2561 ICS, IN C. ase rM od ule Features • Integrated electroabsorption modulator ■ 1.5 µm wavelength, full C-band


    Original     		PDF E2561-Series DS02-298 10 gb laser diode E2560S34 70002 E2561H53 E2561H54 E2561H55 E2561H56 E2561H57 E2561H58 E2561H59

    S2383

    Abstract: No abstract text available
    Text: PHOTODIODE Si APD S2381 to S2385, S5139, S8611, S3884, S4315 series Low bias operation, for 800 nm band Features Applications l Stable operation at low bias l High-speed response l High sensitivity and low noise l Spatial light transmission l Rangefinder • General ratings / Absolute maximum ratings


    Original     		PDF S2381 S2385, S5139, S8611, S3884, S4315 S2382 S5139 S8611 S2383