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    CONVENTIONS USED IN PRESENTING TECHNICAL DATA Search Results

    CONVENTIONS USED IN PRESENTING TECHNICAL DATA Result Highlights (5)

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    Conventions used in Presenting Technical Data

    Abstract: 80057 germanium diode smd R Y SMD TRANSISTOR smd dual transistor G 9 Optocoupler with thyristor OPTOCOUPLER thyristor 4N35-X016 optocoupler SFH615 datasheet suppressor diode smd
    Text: Conventions used in Presenting Technical Vishay Semiconductors Conventions used in Presenting Technical Data NOMENCLATURE FOR SEMICONDUCTOR DEVICES ACCORDING TO PRO ELECTRON The type number of semiconductor devices consists of two letters followed by a serial number.


    Original     		10-Sep-07 Conventions used in Presenting Technical Data 80057 germanium diode smd R Y SMD TRANSISTOR smd dual transistor G 9 Optocoupler with thyristor OPTOCOUPLER thyristor 4N35-X016 optocoupler SFH615 datasheet suppressor diode smd PDF

    Untitled

    Abstract: No abstract text available
    Text: Conventions Used Vishay Semiconductors Conventions Used in Presenting Technical Data SYMBOLS AND TERMINOLOGY ALPHABETICALLY A Radiant sensitive area sr Steradian C Capacitance T Period (duration) °C Celsius T Temperature Cj Junction capacitance t Time Ck


    Original     		21-Aug-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: Conventions Used in Presenting Technical Data Polarity Conventions The voltage direction is given either: D By an arrow which points out from measuring to reference point, or D By a double subscript, whereby the first subscript is termed as the measuring point, the second subscript as


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    6 pin TRANSISTOR SMD CODE 21

    Abstract: germanium diode smd 6 pin TRANSISTOR SMD CODE p SMD CODE y17 transistor smd z a smd transistor 5 lead R Y SMD TRANSISTOR BRT12H-X009T OPTOCOUPLER thyristor photo thyristor
    Text: VISHAY Vishay Semiconductors Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron The type number of semiconductor devices consists of two letters followed by a serial number For example: C Material


    Original     		21-Oct-03 CNY17F-2X017T 4N35-X016 BRT12H-X009T 6 pin TRANSISTOR SMD CODE 21 germanium diode smd 6 pin TRANSISTOR SMD CODE p SMD CODE y17 transistor smd z a smd transistor 5 lead R Y SMD TRANSISTOR BRT12H-X009T OPTOCOUPLER thyristor photo thyristor PDF

    AEG TFK TELEFUNKEN

    Abstract: TFK diodes 148 IR diodes TFK 4 040 thyristor aeg varactor diode bb 205 aeg thyristor tfk U 264 Pertinax AEG drill electrical connection diagram MINI MELF MARKING CODE GP
    Text: TELEFUNKEN Semiconductors Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron The part number of a semiconductor device consists of two letters followed by a serial number. B For example: Material


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    VARACTOR diode POINT color code table

    Abstract: smd transistor w20 tunnel diode General Electric germanium photodiode PIN IEC747-5 circuit diagram of luminous metal detector GaAs tunnel diode photodiode germanium tunnel diode GaAs germanium diode smd
    Text: Vishay Semiconductors Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron The type number of semiconductor devices consists of: Two letters followed by a serial number B For example: Material P W20


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    tunnel diode high frequency

    Abstract: diode tunnel transistor use in oscillator diode nomenclature DATASHEET TUNNEL DIODE photo thyristor thyristor regulator Low frequency power transistor oscillator tunnel diode transistor power
    Text: VISHAY Vishay Semiconductors Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron The part number of a semiconductor device consists of two letters followed by a serial number. For example: B Material


    Original     		OT323 OT343 07-Jan-03 tunnel diode high frequency diode tunnel transistor use in oscillator diode nomenclature DATASHEET TUNNEL DIODE photo thyristor thyristor regulator Low frequency power transistor oscillator tunnel diode transistor power PDF

    Untitled

    Abstract: No abstract text available
    Text: Vishay Semiconductors General Information Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron The part number of a semiconductor device consists of two letters followed by a serial number. B For example:


    Original     		PDF

    oscillator tunnel diode

    Abstract: No abstract text available
    Text: Vishay Semiconductors General Information Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron The part number of a semiconductor device consists of two letters followed by a serial number. B For example:


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    transistor IR 9317

    Abstract: 84121 photo thyristor audio MAGNETIC HEAD MAGNETIC HEAD circuit audio oscillator tunnel diode 9315 DATASHEET TUNNEL DIODE MAGNETIC HEAD circuit oscillator tunnel diode datasheet
    Text: VISHAY Vishay Semiconductors Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron The part number of a semiconductor device consists of two letters followed by a serial number. For example: B Material


    Original     		08-Jan-04 transistor IR 9317 84121 photo thyristor audio MAGNETIC HEAD MAGNETIC HEAD circuit audio oscillator tunnel diode 9315 DATASHEET TUNNEL DIODE MAGNETIC HEAD circuit oscillator tunnel diode datasheet PDF

    RECTIFIER DIODE 5A, 2500V VRRM

    Abstract: DO220 transistor smps high voltage Diode BYT42 M byv26 smd MARK smd diode general semiconductor byv26 germanium rectifier diode photo thyristor tunnel diode
    Text: Vishay Telefunken General Information Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron The part number of a semiconductor device consists of two letters followed by a serial number. B For example:


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    diode tunnel

    Abstract: NF50 Common collector configuration basic rs gp germanium diode
    Text: Vishay Semiconductors Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron The part number of a semiconductor device consists of two letters followed by a serial number. B For example: Material F Function


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    HALL EFFECT 21E

    Abstract: thyristor aeg transistor SMD 12E transistor Common Base configuration TRANSISTOR SMD MARKING CODE 2s aeg thyristor NPN transistor bc 148 lg smd transistor diode marking code YF MARKING SMD TRANSISTOR GG
    Text: RF Transistors Data Book 1997 Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron The part number of a semiconductor device consists of two letters followed by a serial number. For example: B Material


    Original     		26-Feb-97 HALL EFFECT 21E thyristor aeg transistor SMD 12E transistor Common Base configuration TRANSISTOR SMD MARKING CODE 2s aeg thyristor NPN transistor bc 148 lg smd transistor diode marking code YF MARKING SMD TRANSISTOR GG PDF

    smd transistor w20

    Abstract: w20 smd transistor w20 transistor smd opto-coupler darlington linear opto coupler LOW VOLTAGE opto coupler IC darlington opto coupler DATASHEET TUNNEL DIODE OPTOCOUPLER thyristor Dual opto coupler IC
    Text: Vishay Telefunken Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron The type number of semiconductor devices consists of: Two letters followed by a serial number B For example: Material P W20 Function


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    Common collector configuration basic

    Abstract: transistor Common emitter configuration NF50 yr yf transistor photo thyristor oscillator tunnel diode
    Text: Vishay Telefunken Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron The part number of a semiconductor device consists of two letters followed by a serial number. B For example: Material F Function


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    9999 DIODE

    Abstract: high frequency diode Low frequency power transistor step recovery diode tunnel diode high frequency "high frequency Diode" diode tunnel transistor power audio
    Text: VISHAY Vishay Telefunken General Information Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron I The part number of a semiconductor device consists of two letters followed by a serial number.


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    Low frequency power transistor

    Abstract: transistor 99 transistor power audio diode nomenclature bandgap
    Text: Tem ic Semiconductors Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron The type number of semiconductor devices consists of: Two letters followed by a serial number For example: B P W20 Material


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    transistor A 1013

    Abstract: high frequency diode Low frequency power transistor 9999 DIODE diode nomenclature "high frequency Diode"
    Text: Tem ic S e m i c o n d u c t o r s Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron The part number of a semiconductor device consists of two letters followed by a serial number. For example: B


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    smd diod

    Abstract: smd diod mm
    Text: Temic S e m i c o n d u c t o r s Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron T he type num ber o f sem iconductor devices consists of two letters follow ed by a serial num ber C M aterial


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    Untitled

    Abstract: No abstract text available
    Text: Tem ic S e m i c o n d u c t o r s Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron The part num ber o f a sem iconductor device consists o f tw o letters follow ed by a serial number. For exam ple:


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    Untitled

    Abstract: No abstract text available
    Text: V I^ ^ Y Vishay Telefunken General Information Conventions Used in Presenting Technical Data Symbols and Terminology alphabetically A A A n o d e, a n o d e term inal •srei R e la tiv e supply current R a d ia n t sensitive a re a It O n -s ta te current


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    Untitled

    Abstract: No abstract text available
    Text: ülmËï W I R E L E S S £ f/C Conventions Used in Presenting Technical Data Polarity Conventions T h e v o lta g e d ire c tio n is g iv e n e ith e r: • By an a rro w w h ic h p o in ts o u t fro m m e a su rin g to re fe r­ e n c e p o in t, o r •


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    Untitled

    Abstract: No abstract text available
    Text: Tem ic TELEFUNK.EN Sem iconductors Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron T h e pari n u m b e r o f a s e m i c o n d u c t o r d e vic e consis ts o f tw o letters foll ow e d by a serial nu mb er.


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    Untitled

    Abstract: No abstract text available
    Text: Tem ic TELEFUNKEN Semiconductors Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron T h e p a rt n u m b e r o f a s e m ic o n d u c to r d e v ic e c o n sis ts tw o letters fo llo w e d by a s er ia l n u m b er.


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