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    Vishay Intertechnologies 11455870-10 PWR CONDITION DATA

    SPECIAL FOR H.K.TECHNOLOGIES, POWER CONDITION DATA - Bulk (Alt: 11455870-10 PWR CONDITION DATA)
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    Avnet Americas 11455870-10 PWR CONDITION DATA Bulk 1
    • 1 -
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    ITT Interconnect Solutions 16SIZE COND/INS ANVIL(A1158-01

    - Bulk (Alt: 16SIZE COND/INS ANVIL(A1158-01)
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    Avnet Americas 16SIZE COND/INS ANVIL(A1158-01 Bulk 5 Weeks 1
    • 1 $540.837
    • 10 $532.8246
    • 100 $508.7874
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    pico Technology TA487 IEPE SIGNAL CONDITIONER

    Iepe Signal Conditioner |Pico Technology TA487 IEPE SIGNAL CONDITIONER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark TA487 IEPE SIGNAL CONDITIONER Bulk 1
    • 1 $279
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    Pilz International PSEN CS2.2N/PSEN CS2.1 1 UNIT (ALTERNATE: PCIR 101 CONDIZIONATORE DI SEGNALE)

    RFiD safety switch 2 safe semiconductor outputs, 5-pin M12 connector. | Pilz PSEN CS2.2N/PSEN CS2.1 1 UNIT
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    RS PSEN CS2.2N/PSEN CS2.1 1 UNIT (ALTERNATE: PCIR 101 CONDIZIONATORE DI SEGNALE) Bulk 1 4 Weeks 1
    • 1 $428.64
    • 10 $407.21
    • 100 $385.78
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    GEFRAN spa F003152 (ALTERNATE: PCIR 102 CONDIZIONATORE DI SEGNALE)

    Signal conditioner for linear transducers | Gefran F003152
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS F003152 (ALTERNATE: PCIR 102 CONDIZIONATORE DI SEGNALE) Bulk 1
    • 1 $413.03
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    CONDI Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1N1730 Conditioning Semiconductor Devices 3.6A Iout, 50V Vrrm General Purpose Silicon Rectifier Scan PDF
    1N1730 Conditioning Semiconductor Devices 750mA Iout, 2.5kV Vrrm General Purpose Silicon Rectifier Scan PDF
    1N1731 Conditioning Semiconductor Devices 3.6A Iout, 50V Vrrm General Purpose Silicon Rectifier Scan PDF
    1N1731 Conditioning Semiconductor Devices 750mA Iout, 2.5kV Vrrm General Purpose Silicon Rectifier Scan PDF
    1N1732 Conditioning Semiconductor Devices 3.6A Iout, 50V Vrrm General Purpose Silicon Rectifier Scan PDF
    1N1732 Conditioning Semiconductor Devices 750mA Iout, 2.5kV Vrrm General Purpose Silicon Rectifier Scan PDF
    1N1733 Conditioning Semiconductor Devices 750mA Iout, 2.5kV Vrrm General Purpose Silicon Rectifier Scan PDF
    1N1733 Conditioning Semiconductor Devices 3.6A Iout, 50V Vrrm General Purpose Silicon Rectifier Scan PDF
    1N1734 Conditioning Semiconductor Devices 3.6A Iout, 50V Vrrm General Purpose Silicon Rectifier Scan PDF
    1N2382 Conditioning Semiconductor Devices 750mA Iout, 2.5kV Vrrm General Purpose Silicon Rectifier Scan PDF
    1N2382 Conditioning Semiconductor Devices 3.6A Iout, 50V Vrrm General Purpose Silicon Rectifier Scan PDF
    1N2383 Conditioning Semiconductor Devices 750mA Iout, 2.5kV Vrrm General Purpose Silicon Rectifier Scan PDF
    1N2383 Conditioning Semiconductor Devices 3.6A Iout, 50V Vrrm General Purpose Silicon Rectifier Scan PDF
    1N2384 Conditioning Semiconductor Devices 750mA Iout, 2.5kV Vrrm General Purpose Silicon Rectifier Scan PDF
    1N2384 Conditioning Semiconductor Devices 3.6A Iout, 50V Vrrm General Purpose Silicon Rectifier Scan PDF
    1N2385 Conditioning Semiconductor Devices 750mA Iout, 2.5kV Vrrm General Purpose Silicon Rectifier Scan PDF
    1N2385 Conditioning Semiconductor Devices 3.6A Iout, 50V Vrrm General Purpose Silicon Rectifier Scan PDF
    1N5477 Conditioning Semiconductor Devices 3.6A Iout, 50V Vrrm General Purpose Silicon Rectifier Scan PDF
    1N5478 Conditioning Semiconductor Devices 3.6A Iout, 50V Vrrm General Purpose Silicon Rectifier Scan PDF
    1N5479 Conditioning Semiconductor Devices 3.6A Iout, 50V Vrrm General Purpose Silicon Rectifier Scan PDF
    ...

    CONDI Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: GaAÄAs IRED a PHOTO-MOS FET TLP595G TELECOMMUNICATION Unit in m m DATA ACQUISITION MEASUREMENT INSTRUMENTATION The T O S H I B A T L P 5 9 5 G condists of an a l u m i n u m g alium ar s e n i d e infra red e m i tting diode o p t i c a l l y coupled to a p h o t o - M O S FET in a eight lead plastic D IP


    OCR Scan     		TLP595G 150mA PDF

    TLP55

    Abstract: No abstract text available
    Text: T O SH IB A TLP5590GM TOSHIBA PHOTOCOUPLER GaAM s IRED + PHOTO-IC TLP55 90GM) TRANSISTOR INVERTOR U nit in mm INVERTER FOR AIR CONDITIONER LINE RECEIVER IPM INTERFACES The TOSHIBA TLP559 IGM) consists of a GaA£As high-output light emitting diode and a high speed detector of one chip photo diodetransistor.


    OCR Scan     		TLP5590GM) TLP55 TLP559 TLP559 200pF, PDF

    F585

    Abstract: No abstract text available
    Text: February 6, 1997 TIM5964-16L-151 1•RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Pow er at 1dB SYMBOL CONDITION P id B Ta= 25 °C MIN. TYP. MAX. UNIT 41.5 42.5 6.0 7.0 — dBm Com pression Point Pow er G ain at 1dB G id B Com pression Point V d s = 10V


    OCR Scan     		TIM5964-16L-151 TIM5964- 16L-151 2-16G1B) F585 PDF

    Untitled

    Abstract: No abstract text available
    Text: Apr. 1998 T IM 3 7 4 2 -4 5 S L -3 4 1 1. RF PERFORMANCE SPECIFICATIONS f Ta= 25 °C CHARACTERISTICS SYMBOL CONDITION MIN. TYP. MAX. UNIT Output Power at 1dB 46.0 46.5 PldB — dBm Compression Point VDS= 10V GldB — Power Gain at 1dB 10.0 f=3.3-3.6GHz —


    OCR Scan     		TIM3742-45SL-34I 3600mfl, PDF

    74AC series

    Abstract: POM-n
    Text: 9 P R E C A U T IO N S IN D E S IG N IN G C IR C U IT S 9-1 Input Processing 1 Processing of unused gates. Inputs of CMOS IC have such a high im pedance th at the logic level becom es undefined under open conditions. If the input is a t an interm ediate level, the P -channel and N -channel transistors both turn


    OCR Scan     		AC-54 74AC series POM-n PDF

    ieee754

    Abstract: TRW LSI Products IEEE-754 ABMT C3202
    Text: Floating-Point Arithmetic T iT w V Fixed-point digital signal processor design requires careful attention to dynam ic range, limit cycles, and overflow conditions. Block floating-point is often used to extend the dynam ic range, but it carries with it significant bookkeeping overhead.


    OCR Scan     		IEEE-754 TMC3200 TMC32 TMC3202 TMC3210 32/34-Bit 32-Bit 32-Bit ieee754 TRW LSI Products ABMT C3202 PDF

    Untitled

    Abstract: No abstract text available
    Text: 4. Solder-mounting Flat Package ICs 1. Soldering conditions a. Soldering iron Solder a t lead tem p eratu re of 2 6 0 t for no m ore than 10 seconds or a t 350°C fo r no m ore th a n 3 seconds. b. Infrared reflow 1 W e recom m end heating m ethods in far-interm ediate infrared shown a t the top and bottom of


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA July 1997 TIM1414-7-252 1. RF PERFORMANCE SPECIFICATIONS Ta= 25°C Ì CHARACTERISTICS Output Power at ldB Compression Point Power Gain at ldB Compression Point Drain Current Power Added Efficiency SYMBOL CONDITION MIN. TYP. MAX. UNIT 37.0 38.0 — dBm


    OCR Scan     		TIM1414-7-252 IGS---72pA PDF

    Untitled

    Abstract: No abstract text available
    Text: Oct. 1998 PRELIMINARY TIM5964-4SL-031 1. RF PERFORMANCE SPECIFICATIONS Ta= 25°C Ì CHARACTERISTICS SYMBOL CONDITION MIN. TYP. MAX. UNIT Output Power at ldB PldB 35.5 36.5 dBm Compression Point Vds= 10V Power Gain at ldB GldB f-5.9-6.4GHz 8.0 9.0 dB IDS-1.1A


    OCR Scan     		TIM5964-4SL-031 PDF

    5252 F ic

    Abstract: No abstract text available
    Text: TOSHIBA July 1997 TIM1414-5-252 1. R F PERFO R M A N CE SP E C IFIC A T IO N S CHARACTERISTICS SYMBOL Output Power at ldB Compression Point P i dB Power Gain at ldB Compression Point GldB CONDITION MIN. TYP. MAX. UNIT 36.5 37.5 — dBm 4.5 5.5 — dB - 2.0


    OCR Scan     		TIM1414-5-252 -72jjA 5252 F ic PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1011-15L RF Performance Specifications Ta = 25°C Characteristic Symbol Output Power at 1 dB Compression Point P 1dB Power Gain at 1dB Compression Point G 1dB Condition Unit Min. Typ. Max. dBm 41.0 42.0 - dB 6.0 7.0 -


    OCR Scan     		TIM1011-15L PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA July 1997 TIM1414-15-252 1. RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS O utput Power at ldB Compression Point Power Gain at ldB Compression Point D rain C urrent — ; Power Added Efficiency SYMBOL PldB GldB CONDITION VDS= 9V f= 13.75-14.5GHz Ids


    OCR Scan     		TIM1414-15-252 145mA 2-11C1B) PDF

    polyester TRW capacitor

    Abstract: No abstract text available
    Text: TR Ì TDC4169 Precision +10.000 Volt Voltage Reference The TDC4169 is a voltage reference offering exceptional accuracy and stab ility over a w ide range of tem perature and power supply conditions. The TDC4169 produces a reference voltage of +10.000 Volts generated from a power


    OCR Scan     		TDC4169 TDC4169 polyester TRW capacitor PDF

    CIRCUITS-13

    Abstract: No abstract text available
    Text: 9. PRECAUTIONS IN DESIGNING CIRCUITS 9-1 Input Processing 1 Processing of unused gate Inputs of CMOS IC have such a high im pedance th at th e logic level becom es undefined under open conditions. If th e input is a t an interm ediate level, the P-channel and N-channel transistors both tu rn on, and excessive supply cu rren t flows.


    OCR Scan     		CIRCUITS-13 CIRCUITS-13 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POW ER MMIC S9782 MICROWAVE SEMICONDUCTOR TECHNICAL DATA Preliminarv 1. RF PERFORMANCE SPECIFICATIONS Ta= 25°C ^ CHARACTERISTICS |SYMBOL CONDITION | M IN. 1 TYP. O u tp u t Pow er Po 37.0 38.0 v d d i= v d d 2 = v d d 3 = io v U N IT —


    OCR Scan     		S9782 37dBm 1600MHz 2-11E1A) PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Product Information November 26, 2002 6 - 18 GHz 2.8 Watt, 24 dB Power Amplifier TGA2501-EPU Key Features and Performance • • • • • • • Preliminary Measured Performance Primary Applications Bias Conditions: VD = 8V ID = 1.2A 20 S21 28


    Original     		TGA2501-EPU 0007-inch PDF

    OC74

    Abstract: No abstract text available
    Text: Advance Product Information September 27, 2004 10Gb/s Wide Dynamic Range Differential TIA TGA4817-EPU Key Features and Performance • • • • • • • • Preliminary Measured Performance Bias Conditions: V+=3.3V I+=70mA 76 Differential Zt dB-Ohm


    Original     		10Gb/s TGA4817-EPU 0007-inch OC74 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Product Information July 16, 2003 6 - 18 GHz 2.8 Watt, 24 dB Power Amplifier TGA2501-EPU Key Features and Performance • • • • • • • Preliminary Measured Performance Primary Applications Bias Conditions: VD = 8V ID = 1.2A 20 S21 28 S21 dB


    Original     		TGA2501-EPU 0007-inch PDF

    TGA4508-EPU

    Abstract: No abstract text available
    Text: Advance Product Information February 19, 2003 Ka Band Low Noise Amplifier TGA4508-EPU Key Features • • • • • • • Preliminary Measured Data Primary Applications Bias Conditions: Vd = 3 V, Id = 40 mA Ga in & R etu rn L o ss d B 40 30 Gain 20


    Original     		TGA4508-EPU TGA4508-EPU PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Product Information September 24, 2003 12-18 GHz Ku-Band 2-Stage Driver Amplifier TGA2506-EPU Key Features • • • • • • Preliminary Measured Data Primary Applications Bias Conditions: Vd = 6 V, Id = 40 mA • Point to Point Radio • Military Ku-Band


    Original     		TGA2506-EPU PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Product Information August 27, 2003 10Gb/s Differential TIA TGA4816-EPU Key Features and Performance • • • • • • • • • Preliminary Measured Performance Bias Conditions: VPOS=3.3V, IPOS=60mA CPD = 0.2 pF RPD = 15 Ohm 66 -3 Differential TZ


    Original     		10Gb/s TGA4816-EPU 10GHz OC-192/STM-64 PDF

    Untitled

    Abstract: No abstract text available
    Text: TLP700H Photocouplers GaAℓAs Infrared LED & Photo IC TLP700H 1. Applications • Transistor Inverters • Air Conditioner Inverters • MOSFET Gate Drivers • IGBT Gate Drivers • Induction Cooktop and Home Appliances 2. General The TLP700H is a photocoupler in a 6-pin SDIP package that consists of a GaAℓAs infrared light-emitting diode


    Original     		TLP700H TLP700H PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Product Information July 11, 2003 Q-Band Driver Amplifier TGA4042-EPU Key Features • • • • • • • • Preliminary Measured Data Primary Applications Bias Conditions: Vd = 6 V, Id = 168 mA • Point-to-Point Radio • Military Radar Systems


    Original     		TGA4042-EPU PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Data Sheet 32 dBm Ku-Band Amplifier TGA2503-SM Key Features • • • • • • • Typical Frequency Range: 12.5 - 16 GHz 32 dBm Nominal Psat 32 dB Nominal Gain 37 dBm Output TOI @ Pin = -20dBm 8 dB Typical Return Loss Bias Conditions: Vd = 6V, Idq = 600 mA


    Original     		TGA2503-SM -20dBm 1200mA TGA2503-SM TGA2503SM PDF