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    COMPLEMENTARY MOSFET TO252 Search Results

    COMPLEMENTARY MOSFET TO252 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    COMPLEMENTARY MOSFET TO252 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    AOD603A

    Abstract: No abstract text available
    Text: AOD603A 60V Complementary MOSFET General Description Product Summary The AOD603A uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.


    Original     		AOD603A AOD603A O252-4L PDF

    complementary MOSFET TO252

    Abstract: Mosfet Sot223 ZXMC10A816N8 717 MOSFET mosfet class-d mosfet DPAK SOIC8 package SOT223 package H-bridge DUAL MOSFET
    Text: Issue Number | 001 New Product Announcement Dual MOSFET saves space and improves performance Description Diodes Incorporated has introduced the ZXMC10A816N8 a 100V complementary dual enhancement mode MOSFET targeted at H-bridge circuits in telecoms DC fan, <100W class D


    Original     		ZXMC10A816N8 ZXMC10A816N8 OT223 OT223 complementary MOSFET TO252 Mosfet Sot223 717 MOSFET mosfet class-d mosfet DPAK SOIC8 package SOT223 package H-bridge DUAL MOSFET PDF

    Untitled

    Abstract: No abstract text available
    Text: DMN10H099SK3 Green 100V N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT NEW PRODUCT Product Summary Features V BR DSS RDS(on) max 100V 80mΩ @ VGS = 10V 99mΩ @ VGS = 6V ID TC = +25°C 17A 15A new generation complementary MOSFET Low RDS(ON) – ensures on state losses are minimized


    Original     		DMN10H099SK3 DS37263 PDF

    DMG4511SK4

    Abstract: DMG4511 TO-252-4L g4511 G4511S
    Text: DMG4511SK4 COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) ID TA = 25°C 35V 35mΩ @ VGS = 10V 13A -35V 45mΩ @ VGS = -10V -12A • • • • • • • • • Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		DMG4511SK4 AEC-Q101 DS32042 DMG4511SK4 DMG4511 TO-252-4L g4511 G4511S PDF

    DMG4511SK4

    Abstract: No abstract text available
    Text: DMG4511SK4 COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) ID TA = 25°C 35V 35mΩ @ VGS = 10V 13A -35V 45mΩ @ VGS = -10V -12A • • • • • • • • • Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		DMG4511SK4 DS32042 DMG4511SK4 PDF

    P2103ND5G

    Abstract: No abstract text available
    Text: Complementary MOSFET ELM35604KA-S •General Description ■Features ELM35604KA-S uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=30V Id=8.5A Rds(on) < 21mΩ(Vgs=10V) Rds(on) < 32mΩ(Vgs=4.5V)


    Original     		ELM35604KA-S ELM35604KA-S P2103ND5G O-252-5 Mar-01-2005 P2103ND5G PDF

    Untitled

    Abstract: No abstract text available
    Text: Complementary MOSFET ELM35600KA-S •General Description ■Features ELM35600KA-S uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=60V Id=5A Rds(on) < 58mΩ(Vgs=10V) Rds(on) < 85mΩ(Vgs=4.5V)


    Original     		ELM35600KA-S ELM35600KA-S P5806ND5G O-252-5 MAY-23-2005 PDF

    P2503ND5G

    Abstract: No abstract text available
    Text: Complementary MOSFET ELM35602KA-S •General Description ■Features ELM35602KA-S uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=30V Id=8A Rds(on) < 25mΩ(Vgs=10V) Rds(on) < 37mΩ(Vgs=4.5V)


    Original     		ELM35602KA-S ELM35602KA-S P2503ND5G O-252-5 May-04-2005 P2503ND5G PDF

    Untitled

    Abstract: No abstract text available
    Text: DMC3021LK4 COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary Device V BR DSS Q1 30V Q2 -30V Features and Benefits RDS(ON) max ID max TC = +25°C • 0.6mm Profile – Ideal for Low Profile Applications • PCB Footprint of 4mm 21mΩ @ VGS = 10V


    Original     		DMC3021LK4 AEC-Q101 DS35082 PDF

    DMC3021

    Abstract: DMC3021LK4
    Text: DMC3021LK4 COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary Device V BR DSS Q1 30V Q2 Features and Benefits RDS(ON) max ID max TA = 25°C 21mΩ @ VGS = 10V 9.4A 32mΩ @ VGS = 4.5V 7.3A 39mΩ @ VGS = -10V -6.8A 53mΩ @ VGS = -4.5V


    Original     		DMC3021LK4 AEC-Q101 DS35082 DMC3021 DMC3021LK4 PDF

    P2804ND5G

    Abstract: No abstract text available
    Text: Complementary MOSFET ELM35601KA-S •General Description ■Features ELM35601KA-S uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=40V Id=7A Rds(on) < 28mΩ(Vgs=10V) Rds(on) < 49mΩ(Vgs=5V)


    Original     		ELM35601KA-S ELM35601KA-S P2804ND5G O-252-5 SEP-16-2005 P2804ND5G PDF

    transistor 123 DL

    Abstract: No abstract text available
    Text: Complementary MOSFET ELM35601KA-S •General Description ■Features ELM35601KA-S uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=40V Id=7A Rds(on) < 28mΩ(Vgs=10V) Rds(on) < 49mΩ(Vgs=5V)


    Original     		ELM35601KA-S ELM35601KA-S P2804ND5G O-252-5 SEP-16-2005 transistor 123 DL PDF

    Untitled

    Abstract: No abstract text available
    Text: Complementary MOSFET ELM35604KA-S •General Description ■Features ELM35604KA-S uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=30V Id=8.5A Rds(on) < 21mΩ(Vgs=10V) Rds(on) < 32mΩ(Vgs=4.5V)


    Original     		ELM35604KA-S ELM35604KA-S P2103ND5G O-252-5 Mar-01-2005 PDF

    Untitled

    Abstract: No abstract text available
    Text: Complementary MOSFET ELM24604HA-S •General Description ■Features ELM24604HA-S uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=40V Id=8A(Vgs=10V) Rds(on) < 33mΩ(Vgs=10V) Rds(on) < 47mΩ(Vgs=4.5V)


    Original     		ELM24604HA-S ELM24604HA-S PDF

    Untitled

    Abstract: No abstract text available
    Text: Complementary MOSFET ELM35603KA-S •General Description ■Features ELM35603KA-S uses advanced trench technology to provide excellent Rds on and low gate charge. N-channel • • • • Vds=40V Vds=-40V Id=10A Id=-7A Rds(on) < 22mΩ(Vgs=10V) Rds(on) < 33mΩ(Vgs=-10V)


    Original     		ELM35603KA-S ELM35603KA-S P2204ND5G O-252-5 May-03-2006 PDF

    30V vgs

    Abstract: No abstract text available
    Text: DMC3021LK4 COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary Device V BR DSS Q1 30V Q2 -30V Features and Benefits RDS(ON) max ID max TA = 25°C 21mΩ @ VGS = 10V 9.4A 32mΩ @ VGS = 4.5V 7.3A 39mΩ @ VGS = -10V -6.8A 53mΩ @ VGS = -4.5V


    Original     		DMC3021LK4 AEC-Q101 DS35082 30V vgs PDF

    C3021

    Abstract: C3021L
    Text: DMC3021LK4 COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary Device V BR DSS Q1 30V Q2 -30V Features and Benefits • • • • • • ID max TC = 25°C RDS(ON) max 21mΩ @ VGS = 10V 14A 32mΩ @ VGS = 4.5V 14A 39mΩ @ VGS = -10V


    Original     		DMC3021LK4 AEC-Q101 DS35082 C3021 C3021L PDF

    Untitled

    Abstract: No abstract text available
    Text: Complementary MOSFET ELM24603HA-S •General Description ■Features ELM24603HA-S uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=60V Id=12A(Vgs=10V) Rds(on) < 60mΩ(Vgs=10V) Rds(on) < 85mΩ(Vgs=4.5V)


    Original     		ELM24603HA-S ELM24603HA-S PDF

    Untitled

    Abstract: No abstract text available
    Text: DMC3021LK4 COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET N EW PRODU CT Product Summary Device V BR DSS Q1 30V Q2 -30V Features and Benefits • • • • • • ID max TC = 25°C RDS(ON) max 21mΩ @ VGS = 10V 14A 32mΩ @ VGS = 4.5V 14A 39mΩ @ VGS = -10V


    Original     		DMC3021LK4 AEC-Q101 DS35082 PDF

    Untitled

    Abstract: No abstract text available
    Text: Complementary MOSFET ELM35603KA-S •General Description ■Features ELM35603KA-S uses advanced trench technology to provide excellent Rds on and low gate charge. N-channel • • • • P-channel Vds=40V Vds=-40V Id=10A Id=-7A Rds(on) < 22mΩ(Vgs=10V) Rds(on) < 33mΩ(Vgs=-10V)


    Original     		ELM35603KA-S ELM35603KA-S P2204ND5G O-252-5 May-03-2006 PDF

    62031

    Abstract: list of P channel power mosfet
    Text: SUD50NP04-62 Vishay Siliconix New Product Complementary N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.030 at VGS = 10 V 8 0.034 at VGS = 4.5 V 8 0.032 at VGS = - 10 V -8 0.041 at VGS = - 4.5 V -8 VDS (V) N-Channel P-Channel


    Original     		SUD50NP04-62 O-252-4L SUD50NP04-62-T4-E3 08-Apr-05 62031 list of P channel power mosfet PDF

    S6207

    Abstract: list of P channel power mosfet SUD50NP04-94 74410
    Text: SUD50NP04-94 Vishay Siliconix New Product Complementary N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.041 at VGS = 10 V 8 0.045 at VGS = 4.5 V 8 0.053 at VGS = - 10 V -8 0.072 at VGS = - 4.5 V -8 VDS (V) N-Channel P-Channel


    Original     		SUD50NP04-94 O-252-4L SUD50NP04-94-T4-E3 08-Apr-05 S6207 list of P channel power mosfet SUD50NP04-94 74410 PDF

    list of P channel power mosfet

    Abstract: SUD50NP04-94 74410
    Text: SUD50NP04-94 Vishay Siliconix New Product Complementary N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.041 at VGS = 10 V 8 0.045 at VGS = 4.5 V 8 0.053 at VGS = - 10 V -8 0.072 at VGS = - 4.5 V -8 VDS (V) N-Channel P-Channel


    Original     		SUD50NP04-94 O-252-4L SUD50NP04-94-T4-E3 18-Jul-08 list of P channel power mosfet SUD50NP04-94 74410 PDF

    list of P channel power mosfet

    Abstract: No abstract text available
    Text: SUD50NP04-62 Vishay Siliconix New Product Complementary N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.030 at VGS = 10 V 8 0.034 at VGS = 4.5 V 8 0.032 at VGS = - 10 V -8 0.041 at VGS = - 4.5 V -8 VDS (V) N-Channel P-Channel


    Original     		SUD50NP04-62 O-252-4L SUD50NP04-62-T4-E3 18-Jul-08 list of P channel power mosfet PDF