COMPLEMENTARY MOSFET TO252 Search Results

AOD603A

Contextual Info: AOD603A 60V Complementary MOSFET General Description Product Summary The AOD603A uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.

complementary MOSFET TO252

Abstract: Mosfet Sot223 ZXMC10A816N8 717 MOSFET mosfet class-d mosfet DPAK SOIC8 package SOT223 package H-bridge DUAL MOSFET
Contextual Info: Issue Number | 001 New Product Announcement Dual MOSFET saves space and improves performance Description Diodes Incorporated has introduced the ZXMC10A816N8 a 100V complementary dual enhancement mode MOSFET targeted at H-bridge circuits in telecoms DC fan, <100W class D

Contextual Info: DMN10H099SK3 Green 100V N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT NEW PRODUCT Product Summary Features V BR DSS RDS(on) max 100V 80mΩ @ VGS = 10V 99mΩ @ VGS = 6V ID TC = +25°C 17A 15A new generation complementary MOSFET Low RDS(ON) – ensures on state losses are minimized

DMG4511SK4

Abstract: DMG4511 TO-252-4L g4511 G4511S
Contextual Info: DMG4511SK4 COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) ID TA = 25°C 35V 35mΩ @ VGS = 10V 13A -35V 45mΩ @ VGS = -10V -12A • • • • • • • • • Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

DMG4511SK4

Contextual Info: DMG4511SK4 COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) ID TA = 25°C 35V 35mΩ @ VGS = 10V 13A -35V 45mΩ @ VGS = -10V -12A • • • • • • • • • Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

P2103ND5G

Contextual Info: Complementary MOSFET ELM35604KA-S •General Description ■Features ELM35604KA-S uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=30V Id=8.5A Rds(on) < 21mΩ(Vgs=10V) Rds(on) < 32mΩ(Vgs=4.5V)

Contextual Info: Complementary MOSFET ELM35600KA-S •General Description ■Features ELM35600KA-S uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=60V Id=5A Rds(on) < 58mΩ(Vgs=10V) Rds(on) < 85mΩ(Vgs=4.5V)

P2503ND5G

Contextual Info: Complementary MOSFET ELM35602KA-S •General Description ■Features ELM35602KA-S uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=30V Id=8A Rds(on) < 25mΩ(Vgs=10V) Rds(on) < 37mΩ(Vgs=4.5V)

Contextual Info: DMC3021LK4 COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary Device V BR DSS Q1 30V Q2 -30V Features and Benefits RDS(ON) max ID max TC = +25°C • 0.6mm Profile – Ideal for Low Profile Applications • PCB Footprint of 4mm 21mΩ @ VGS = 10V

DMC3021

Abstract: DMC3021LK4
Contextual Info: DMC3021LK4 COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary Device V BR DSS Q1 30V Q2 Features and Benefits RDS(ON) max ID max TA = 25°C 21mΩ @ VGS = 10V 9.4A 32mΩ @ VGS = 4.5V 7.3A 39mΩ @ VGS = -10V -6.8A 53mΩ @ VGS = -4.5V

P2804ND5G

Contextual Info: Complementary MOSFET ELM35601KA-S •General Description ■Features ELM35601KA-S uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=40V Id=7A Rds(on) < 28mΩ(Vgs=10V) Rds(on) < 49mΩ(Vgs=5V)

transistor 123 DL

Contextual Info: Complementary MOSFET ELM35601KA-S •General Description ■Features ELM35601KA-S uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=40V Id=7A Rds(on) < 28mΩ(Vgs=10V) Rds(on) < 49mΩ(Vgs=5V)

Contextual Info: Complementary MOSFET ELM35604KA-S •General Description ■Features ELM35604KA-S uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=30V Id=8.5A Rds(on) < 21mΩ(Vgs=10V) Rds(on) < 32mΩ(Vgs=4.5V)

Contextual Info: Complementary MOSFET ELM24604HA-S •General Description ■Features ELM24604HA-S uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=40V Id=8A(Vgs=10V) Rds(on) < 33mΩ(Vgs=10V) Rds(on) < 47mΩ(Vgs=4.5V)

Contextual Info: Complementary MOSFET ELM35603KA-S •General Description ■Features ELM35603KA-S uses advanced trench technology to provide excellent Rds on and low gate charge. N-channel • • • • Vds=40V Vds=-40V Id=10A Id=-7A Rds(on) < 22mΩ(Vgs=10V) Rds(on) < 33mΩ(Vgs=-10V)

30V vgs

Contextual Info: DMC3021LK4 COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary Device V BR DSS Q1 30V Q2 -30V Features and Benefits RDS(ON) max ID max TA = 25°C 21mΩ @ VGS = 10V 9.4A 32mΩ @ VGS = 4.5V 7.3A 39mΩ @ VGS = -10V -6.8A 53mΩ @ VGS = -4.5V

C3021

Abstract: C3021L
Contextual Info: DMC3021LK4 COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary Device V BR DSS Q1 30V Q2 -30V Features and Benefits • • • • • • ID max TC = 25°C RDS(ON) max 21mΩ @ VGS = 10V 14A 32mΩ @ VGS = 4.5V 14A 39mΩ @ VGS = -10V

Contextual Info: Complementary MOSFET ELM24603HA-S •General Description ■Features ELM24603HA-S uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=60V Id=12A(Vgs=10V) Rds(on) < 60mΩ(Vgs=10V) Rds(on) < 85mΩ(Vgs=4.5V)

Contextual Info: DMC3021LK4 COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET N EW PRODU CT Product Summary Device V BR DSS Q1 30V Q2 -30V Features and Benefits • • • • • • ID max TC = 25°C RDS(ON) max 21mΩ @ VGS = 10V 14A 32mΩ @ VGS = 4.5V 14A 39mΩ @ VGS = -10V

Contextual Info: Complementary MOSFET ELM35603KA-S •General Description ■Features ELM35603KA-S uses advanced trench technology to provide excellent Rds on and low gate charge. N-channel • • • • P-channel Vds=40V Vds=-40V Id=10A Id=-7A Rds(on) < 22mΩ(Vgs=10V) Rds(on) < 33mΩ(Vgs=-10V)

62031

Abstract: list of P channel power mosfet
Contextual Info: SUD50NP04-62 Vishay Siliconix New Product Complementary N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.030 at VGS = 10 V 8 0.034 at VGS = 4.5 V 8 0.032 at VGS = - 10 V -8 0.041 at VGS = - 4.5 V -8 VDS (V) N-Channel P-Channel

S6207

Abstract: list of P channel power mosfet SUD50NP04-94 74410
Contextual Info: SUD50NP04-94 Vishay Siliconix New Product Complementary N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.041 at VGS = 10 V 8 0.045 at VGS = 4.5 V 8 0.053 at VGS = - 10 V -8 0.072 at VGS = - 4.5 V -8 VDS (V) N-Channel P-Channel

list of P channel power mosfet

Abstract: SUD50NP04-94 74410
Contextual Info: SUD50NP04-94 Vishay Siliconix New Product Complementary N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.041 at VGS = 10 V 8 0.045 at VGS = 4.5 V 8 0.053 at VGS = - 10 V -8 0.072 at VGS = - 4.5 V -8 VDS (V) N-Channel P-Channel

list of P channel power mosfet

Contextual Info: SUD50NP04-62 Vishay Siliconix New Product Complementary N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.030 at VGS = 10 V 8 0.034 at VGS = 4.5 V 8 0.032 at VGS = - 10 V -8 0.041 at VGS = - 4.5 V -8 VDS (V) N-Channel P-Channel