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    COMPLEMENTARY 637 638 Search Results

    COMPLEMENTARY 637 638 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ML4875CS-T Rochester Electronics LLC Switching Regulator, Voltage-mode, 1.5A, BICMOS, PDSO8, SOIC-8 Visit Rochester Electronics LLC Buy
    ML4875CS-3 Rochester Electronics LLC Switching Regulator, Voltage-mode, 1.5A, BICMOS, PDSO8, SOIC-8 Visit Rochester Electronics LLC Buy
    CA3160T Rochester Electronics LLC Operational Amplifier, 1 Func, 15000uV Offset-Max, BICMOS, MBCY8, PACKAGE-8 Visit Rochester Electronics LLC Buy
    CA3160AE Rochester Electronics Operational Amplifier, 1 Func, 5000uV Offset-Max, BICMOS, PDIP8, PACKAGE-8 Visit Rochester Electronics Buy
    MM74C74M Rochester Electronics LLC 74C74 - D Flip-Flop, CMOS Series, 2-Func, Positive Edge Triggered, 1-Bit, Complementary Output, CMOS, PDSO14 Visit Rochester Electronics LLC Buy

    COMPLEMENTARY 637 638 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BC639

    Abstract: BC 639 Q68000-A2285 Q68000-A3360 Q68000-A3361 BC635 complementary 637 638 bc63
    Text: NPN Silicon AF Transistors BC 635 … BC 639 High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BC 636, BC 638, BC 640 PNP ● 2 3 1 Type Marking Ordering Code BC 635 BC 637 BC 639 – Q68000-A3360


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    PDF Q68000-A3360 Q68000-A2285 Q68000-A3361 BC639 BC 639 Q68000-A2285 Q68000-A3360 Q68000-A3361 BC635 complementary 637 638 bc63

    bc 352 b

    Abstract: siemens heat sink bc 640 bc 639 DATASHEET bc 639 Q68000-A2285 Q68000-A3360 Q68000-A3361 Q68000-A3365 Q68000-A3366
    Text: NPN Silicon AF Transistors BC 635 … BC 639 High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BC 636, BC 638, BC 640 PNP ● 2 3 Type Marking Ordering Code BC 635 BC 637 BC 639 – Q68000-A3360


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    PDF Q68000-A3360 Q68000-A2285 Q68000-A3361 bc 352 b siemens heat sink bc 640 bc 639 DATASHEET bc 639 Q68000-A2285 Q68000-A3360 Q68000-A3361 Q68000-A3365 Q68000-A3366

    bc 640

    Abstract: BC636 BC640 Q68000-A3366 Q68000-A3367 Q68000-A3365 marking 636
    Text: PNP Silicon AF Transistors BC 636 … BC 640 High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BC 635, BC 637, BC 639 NPN ● 2 3 1 Type Marking Ordering Code BC 636 BC 638 BC 640 – Q68000-A3365


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    PDF Q68000-A3365 Q68000-A3366 Q68000-A3367 bc 640 BC636 BC640 Q68000-A3366 Q68000-A3367 Q68000-A3365 marking 636

    CTN639

    Abstract: CTN640 transistor C 639 W CTN635 CTN636 CTN637 CTN638
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company TO-237 Plastic Package CTN635, CTN637, CTN639 CTN636, CTN638, CTN640 CTN635, 637, 639 NPN SILICON PLANAR EPITAXIAL TRANSISTORS CTN636, 638, 640 PNP SILICON PLANAR EPITAXIAL TRANSISTORS


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    PDF ISO/TS16949 O-237 CTN635, CTN637, CTN639 CTN636, CTN638, CTN640 CTN639 CTN640 transistor C 639 W CTN635 CTN636 CTN637 CTN638

    CTN639

    Abstract: CTN635 CTN636 CTN637 CTN638 CTN640
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-237 Plastic Package CTN635, CTN637, CTN639 CTN636, CTN638, CTN640 CTN635, 637, 639 NPN SILICON PLANAR EPITAXIAL TRANSISTORS


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    PDF O-237 CTN635, CTN637, CTN639 CTN636, CTN638, CTN640 CTN636 CTN639 CTN635 CTN637 CTN638 CTN640

    Untitled

    Abstract: No abstract text available
    Text: RF2640 Preliminary              • TDMA/AMPS Cellular Systems • Portable Battery Powered Equipment • CDMA/AMPS Cellular Systems     .201 .185 .002 .006 .017 .005 .112 .124 6 .112 .124 .0197 .038


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    PDF RF2640 RF2640 MSOP-10

    MSOP-10

    Abstract: No abstract text available
    Text: RF2640 Preliminary              • TDMA/AMPS Cellular Systems • Portable Battery Powered Equipment • CDMA/AMPS Cellular Systems     .201 .185 .002 .006 .017 .005 .112 .124 6 .112 .124 .0197 .038


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    PDF RF2640 RF2640 MSOP-10

    900MHZ

    Abstract: MSOP-10 RF2640
    Text: RF2640 Preliminary 6 3V 900MHZ UPCONVERTER/ DRIVER AMPLIFIER Typical Applications • TDMA/AMPS Cellular Systems • Portable Battery Powered Equipment • CDMA/AMPS Cellular Systems Product Description 0.038 ± 0.006 0.192 0.008 6 0.118 0.0197 ± 0.0004 0.004


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    PDF RF2640 900MHZ RF2640 MSOP-10

    MSOP-10

    Abstract: RF2640
    Text: RF2640 3V 900MHz UPCONVERTER/ DRIVER AMPLIFIER Typical Applications • TDMA/AMPS Cellular Systems • Portable Battery-Powered Equipment • CDMA/AMPS Cellular Systems Product Description The RF2640 is a complete upconverter and power amplifier driver designed for TDMA and CDMA applications.


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    PDF RF2640 900MHz RF2640 MSOP-10

    Untitled

    Abstract: No abstract text available
    Text: RF2640 Preliminary  9 0+] 83&219 57(5 '5,9(5 $03/, ,(5 7\SLFDO $SSOLFDWLRQV • TDMA/AMPS Cellular Systems • Portable Battery Powered Equipment • CDMA/AMPS Cellular Systems 3URGXFW 'HVFULSWLRQ 6 0.038 ± 0.006 0.192 0.008 0.118 0.0197 ± 0.0004 MIXERS


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    PDF RF2640 RF2640 MSOP-10

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductor NPN Complementary Power Transistors MJF15030 PNP MJF15031 For Isolated Package Applications Designed for general−purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis.


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    PDF MJF15030 MJF15031 MJE15030 MJE15031 E69369, 221D-02 O-220 AN1040.

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon AF Transistors • BC 635 . BC 639 High current gain • High collector current • Low collector-emitter saturation voltage • Complementary types: BC 636, BC 638, BC 640 PNP Type Marking BC 635 BC 637 BC 639 Q68000-A3360 Q68000-Â2285


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    PDF Q68000-A3360 Q68000-Ã Q68000-A3361 235kG5 BC635 a23Sb05 01H0S37 S3Sb05 D1H053Ã

    WM 53B

    Abstract: No abstract text available
    Text: SIEM ENS PNP Silicon AF Transistors • • • • BC 636 . BC 640 High current gain High collector current Low collector-emitter saturation voltage Complementary types: BC 635, BC 637, BC 639 NPN Type Marking BC 636 BC 638 BC 640 Ordering Code Q68000-A3365


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    PDF Q68000-A3365 Q68000-A3366 Q68000-A3367 EHP00204 EHP00202 EHP00205 flS35bDS 01EDSM2 fl235b05 D1205M3 WM 53B

    transistor BC 236

    Abstract: bc 106 transistor transistors marking HK transistor C 639 W transistors BC 23 bc 569 A27 637 transistor BC 639 A27 639 marking code transistor HK
    Text: 17E T> TELEFUNKEN ELECTRONIC • 0^2DDBb 000^30^ BC 635 • BC 637 • BC 639 TTIILIIFIUIÄINI electronic Creative 'ftehnotag>ea r - a i -33 Silicon NPN Epitaxial Planar Transistors Applications: For complementary AF driver stages features: • • High power.dissipation


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    PDF BC635 15A3DIN transistor BC 236 bc 106 transistor transistors marking HK transistor C 639 W transistors BC 23 bc 569 A27 637 transistor BC 639 A27 639 marking code transistor HK

    transistor BC 236

    Abstract: transistor bf 425 transistor bc 237c TRANSISTOR 636 bc638 transistor transistors BC 23 bc 640 transistor bc 238 b D-636 transistor
    Text: *T I 17E » TELEFUNKEN E L E C T R O N IC TTdlUKFCtfllMOSlKfi • IAL66 û'tëOCHb DODTB^l BC 636 • BC 638 • BC 640 electronic Creata« léchnofogtes Silicon PNP Epitaxial Planar Transistors Applications: For complementary AF driver stages .Features:


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    PDF IAL66 15A3DIN transistor BC 236 transistor bf 425 transistor bc 237c TRANSISTOR 636 bc638 transistor transistors BC 23 bc 640 transistor bc 238 b D-636 transistor

    B0738

    Abstract: b0734 TIP5530 B0736 TIP 5530 BD 147 TIP 3055 tip 125 tip 42 b073
    Text: PRELIMINARY BD734, BD736, BD738 PNP EPIBASE POWER TRANSISTORS H IG H G A IN G E R M A N IU M R E PLA C E M E N T • Car and Portable Radio • Complementary O utput Stages • Complementary w ith B D 733, B D 735, B D737 mechanical data TO-66P All d im e n s io n s a r e in m m


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    PDF BD734, BD736, BD738 BD733, BD735, BD737 B0738 b0734 TIP5530 B0736 TIP 5530 BD 147 TIP 3055 tip 125 tip 42 b073

    B0735

    Abstract: darlington tip b0737 TIP 125 B0738 TIP5530 darlington tip 42 b073 BD737 BD 147
    Text: PRELIMINARY BD733, BD735, BD737 NPN EPI BASE POWER TRAN SISTO RS 873 HIGH GAIN GERMANIUM R EPLA CEM EN T • Car and Portable Radio • Complementary Output Stages


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    PDF BD733, BD735, BD737 BD734, BD738, BD738 BD733 BD735 B0735 darlington tip b0737 TIP 125 B0738 TIP5530 darlington tip 42 b073 BD737 BD 147

    bc 540

    Abstract: TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N
    Text: Power transistors for horizontal deflection output circuits Type Structure Fig. Nr. Characteristics Maximum ratings ptot at 'case = +90°c 7c :a v W A fj Notes at ^ CERM V M Hz rc mA ^ CEsat a / q and " F E V A BU 204 NPN 25 10.0 2.5 1300 7.5 100 S5 2.0 2.0


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    PDF BC1611) BCY58 BCY59 BD1361) BD436' BC432' BC547 bc 540 TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N

    TIP 41 transistor

    Abstract: B0738 transistor tip 5530 e 3055 t tip 147 TRANSISTOR equivalent TRANSISTOR tip 127 texas instruments tip35 transistor tip 35c tip 127 TRANSISTOR equivalent TIP35C EQUIVALENT
    Text: TYPES TIP35, TIP35A, TIP35B, TIP35C N-P-N SINGLE-DIFFUSED M E S A SILICON POWER TRANSISTORS FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH TIP36, TIP36A, TIP36B, TIP36C • 125 W at 25°C Case Temperature •


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    PDF TIP35, TIP35A, TIP35B, TIP35C TIP36, TIP36A, TIP36B, TIP36C TIP35 TIP35A TIP 41 transistor B0738 transistor tip 5530 e 3055 t tip 147 TRANSISTOR equivalent TRANSISTOR tip 127 texas instruments tip35 transistor tip 35c tip 127 TRANSISTOR equivalent TIP35C EQUIVALENT

    TIP 2n3055

    Abstract: transistor tip 5530 tip 147 TRANSISTOR equivalent TIP 122 transistor TIP 41 transistor transistor tip 3055 TIP 122 transistor APPLICATION NOTES transistor TIP 42 tip 127 TRANSISTOR equivalent TRANSISTOR tip 127
    Text: T Y P E TIP3055 N-P-N SIN G LE-D IFFU SED M ESA SILICON POWER TRAN SISTO R FO R POWEiR A M P L IF IE R A N D H IG H -S P E E D SW IT C H IN G A P P L IC A T IO N S P L A S T IC -C A S E R E P L A C E M E N T F O R 2N3055 • 90 Watts at 25°C Case Temperature


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    PDF TIP30S5 2N3055 TIP 2n3055 transistor tip 5530 tip 147 TRANSISTOR equivalent TIP 122 transistor TIP 41 transistor transistor tip 3055 TIP 122 transistor APPLICATION NOTES transistor TIP 42 tip 127 TRANSISTOR equivalent TRANSISTOR tip 127

    Tip 26C transistor

    Abstract: tip 26c T1P142 tip140 texas instruments TIP142 Application Note TIP14Z 1N014 tlp142 circuit 2N 3055 transistor tip 3055
    Text: TYPES TIP140, TIP141, TIP142 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS DESIGNED FOR COM PLEM ENTARY USE WITH TIP145, TIP146, TIP147 125 W at 25°C Case Temperature • Min hpE of 1000 at 4 V , 5 A 10-A Rated Collector Current • 100-mJ Reverse Energy Rating


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    PDF TIP140, TIP141, TIP142 TIP145, TIP146, TIP147 100-mJ TIP140 TIP141 T1P142 Tip 26C transistor tip 26c T1P142 tip140 texas instruments TIP142 Application Note TIP14Z 1N014 tlp142 circuit 2N 3055 transistor tip 3055

    TIP 41 transistor

    Abstract: tip 147 TRANSISTOR equivalent TIP 122 transistor tip 127 TRANSISTOR equivalent transistor tip 35c transistor BD 141 transistor tip 5530 transistor tip35c TIP 122 transistor APPLICATION NOTES TRANSISTOR bd 147
    Text: T Y P E S TIP 36, TIP36A, TIP36B, TIP36C P-N-P SINGLE-DIFFUSED M ESA SILICO N POWER TRANSISTORS F O R P O W E R -A M P L IF IE R A N D H IG H -SP EED -SW ITCH IN G A P P L IC A T IO N S D E S IG N E D F O R C O M P L E M E N T A R Y U S E W ITH T IP 3 5 , T IP 3 5 A , T IP 3 5 B , T IP 3 5 C


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    PDF TIP36, TIP36A, TIP36B, TIP36C TIP35, TIP35A, TIP35B, TIP35C TIP36 TIP36A TIP 41 transistor tip 147 TRANSISTOR equivalent TIP 122 transistor tip 127 TRANSISTOR equivalent transistor tip 35c transistor BD 141 transistor tip 5530 transistor tip35c TIP 122 transistor APPLICATION NOTES TRANSISTOR bd 147

    Untitled

    Abstract: No abstract text available
    Text: GD26LS33A QUAD DIFFERENTIAL LINE RECEIVERS Feature • GD26LS33AC has ± 15-V Common-Mode Range with ± 500 mV Sensitivity • Input Hysteresis . 50 mV Typical • Operates From a Single 5-V Supply • Low-Power Schottky Circuitry • 3-State Outputs • Complementary Output Enable Inputs


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    PDF GD26LS33A GD26LS33AC GD27LS33A QD26LS33A

    Untitled

    Abstract: No abstract text available
    Text: S G S -1 H 0 M S 0 N G l. TDA7396 iy 45W BRIDGE CAR RADIO AMPLIFIER WITH DIAGNOSTIC FACILITY • HIGH POWER CAPABILITY: - 60W/2Q EIAJ - 45W/2Q @ Vs = 14.4V, f = 1KHz, d = 10% ■ DIFFERENTIAL INPUTS EITHER SINGLE ENDED OR DIFFERENTIAL INPUT SIGNALS ARE ACCEPTED


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    PDF TDA7396 G0b4fi52 00b4A53