COLLECTOR CHARACTERISTIC CURVE Search Results

LT 74 s

Contextual Info: KSA1142 PNP EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER HIGH FREQENCY POWER AMPLIFIER • Complement to KSC2682 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

Contextual Info: KSC2333 NPN EPITAXIAL SILICON TRANSISTOR HIGH SPEED SWITCHING LOW COLLECTOR SATURATION VOLTAGE SPECIFIED OF REVERSE BIASED SOA WITH INDUCTIVE LOADS ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

STS5343

Abstract: 90550
Contextual Info: STS5343 Absolute maximum ratings Ta=25°C Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 60 V Collector-Emitter voltage VCEO 50 V Emitter-Base voltage VEBO 5 V Collector current IC 150 mA Collector dissipation PC 625 mW Junction temperature

STC1815

Abstract: pc 625
Contextual Info: STC1815 NPN Silicon Transistor STC1815 Ta=25°°C Absolute maximum ratings Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 60 V Collector-Emitter voltage VCEO 50 V Emitter-Base voltage VEBO 5 V Collector current IC 150 mA Collector dissipation

10K1

Abstract: STC1015
Contextual Info: STC1015 PNP Silicon Transistor STC1015 Ta=25°°C Absolute maximum ratings Characteristic Symbol Ratings Unit Collector-Base voltage VCBO -60 V Collector-Emitter voltage VCEO -50 V Emitter-Base voltage VEBO -5 V Collector current IC -150 mA Collector dissipation

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR KSA1370 CRT DISPLAY, VIDEO OUTPUT • High Voltage • Low Reverse Transfer Capacitance : CRE=1.7pF ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

Contextual Info: KSC3569 NPN EPITAXIAL SILICON TRANSISTOR HIGH SPEED SWITCHING LOW COLLECTOR SATURATION VOLTAGE SPECIFIED OF REVERSE BIASED SOA WITH INDUCTIVE LOADS TO-220F ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Base Voltage VcBO 500 V Collector Emitter Voltage

Contextual Info: KSB1097 PNP EPITAXIAL SILICO N TRAN SISTO R LOW FREQUENCY POWER AMPLIFIER LOW SP EED SWITCHNG INDUSTRIAL USE • Complement to KSD1588 ABSO LUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current DC

Contextual Info: KSD1588 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING • Complement to KSB1097 ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current DC 'C o lle c to r Current (Pulse)

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KSC2752 HIGH SPEED, HIGH VOLTAGE SWICHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS Characteristic Rating Symbol Unit Collector- Base Voltage V cB O 500 V Collector-Emitter Voltage V cE O 400 V Emitter- Base Voltage V ebo Collector Current DC

Contextual Info: KSB1151 PNP EPITAXIAL SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT TO-126 HIGH POWER DISSIPATION: PC=1.3W TA=25°C Complement to KSD 1691 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector-Base Voltage Characteristic VcBO Symbol -6 0 V Collector-Emitter Voltage

A 986 transistor

Abstract: SL 100 NPN Transistor
Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSD985/986 LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage Collector-Emitter Voltage: KSD985 : KSD986 Emitter-Base Voltage

TIP41C

Abstract: TIP42C
Contextual Info: SEMICONDUCTOR TECHNICAL DATA TIP41C EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • Complementary to TIP42C. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage V CBO 100 V Collector-Emitter Voltage

Contextual Info: FJX597J FJX597J Capacitor Microphone Applications 3 • Especially Suited for use in Audio, Telephone Capacitor Microphones • Excellent Voltage Characteristic • Excellent Transient Characteristic 2 1 SOT-323 1. Base 2. Emitter 3. Collector Si N-channel Junction FET

KTA1273

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTA1273 EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURES • Complementary to KTC3205. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage V CBO -30 V Collector-Emitter Voltage

transistor ph 30

Abstract: TIP31C TIP32C
Contextual Info: SEMICONDUCTOR TECHNICAL DATA TIP31C TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • Complementary to TIP32C. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage 100 V V CBO Collector-Emitter Voltage

2SA1451

Abstract: 2SA1451A 2SC3709A
Contextual Info: TO SH IBA 2SA1451A SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 451 A Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS M AXIM UM RATINGS (Tc = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

2SB772

Abstract: 2SB772S 2SD882 2SB772 complement complement 2sd882
Contextual Info: FCI 2SB772/2SB772S PNP Epitaxial Silicon Transistor Semiconductor AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING • Complement to 2SD882 ¡ABSOLUTE MAXIMUM RATINGS ITa = 2 5 Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Bias Voltage

Contextual Info: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR KSB601 LOW FREQUENCY POWER AMPLIFIER MEDIUM SPEED SWITCHING INDUSTRIAL USE • Complement to KSD560 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector-Base Voltage Characteristic VcBO Symbol - 100 V Collector-Emitter Voltage

2SB772

Contextual Info: 2SB772/2SB772S PNP Epitaxial Silicon Transistor Semiconductor AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING • Complement to 2SD882 TO-92 i ABSOLUTE MAXIMUM RATINGS ITa = 25 Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Bias Voltage

KSB772

Abstract: KSD882
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KSD882 AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING TO-126 • Complement to KSB772 ABSOLUTE MAXIMUM RATINGS Ta= 25°C Rating Symbol Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

BC 251 transistor

Abstract: 50V 1A power transistor
Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSD985/986 LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VcEO 150 Collector-Emitter Voltage: KSD985 VcEO 60 V VcEO

t 326 Transistor

Abstract: GE-325 I326
Contextual Info: KSD882 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING TO-126 • Complement to KSB772 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Unit Rating Collector- Base Voltage VcBO 40 V Collector-Emitter Voltage Emitter- Base Voltage

2N4898

Abstract: 2N4899 2N4900 ib10s
Contextual Info: 2N4898, 2N4899, 2N4900 PNP ELECTRICAL CHARACTERISTICS Tc = 25°C unless otherwise noted Symbol Characteristic Min Max Unit OFF CHARACTERISTICS Collector - Emitter Sustaining Voltage (1) ( l c = 100mA, lB = 0 ) Collector Cutoff Current ( VCE = 20 V, lB = 0 )