STS5343
Abstract: 90550
Text: STS5343 Absolute maximum ratings Ta=25°C Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 60 V Collector-Emitter voltage VCEO 50 V Emitter-Base voltage VEBO 5 V Collector current IC 150 mA Collector dissipation PC 625 mW Junction temperature
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STS5343
KST-9055-001
STS5343
90550
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Untitled
Abstract: No abstract text available
Text: FJX597J FJX597J Capacitor Microphone Applications 3 • Especially Suited for use in Audio, Telephone Capacitor Microphones • Excellent Voltage Characteristic • Excellent Transient Characteristic 2 1 SOT-323 1. Base 2. Emitter 3. Collector Si N-channel Junction FET
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FJX597J
OT-323
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Untitled
Abstract: No abstract text available
Text: BCW61BLT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Characteristic Symbol Rating Unit Collector-Base Voltage Vcbo -32 V Collector-Emitter Voltage
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BCW61BLT1
OT-23
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1N916
Abstract: AN-569 BCW33LT1 BW33LT1 MPS3904
Text: BCW33LT1 General Purpose Transistor NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage VCEO 32 Vdc Collector - Base Voltage VCBO 32 Vdc Emitter - Base Voltage VEBO 5.0 Vdc IC 100 mAdc Characteristic Symbol Max Unit Total Device Dissipation FR- 5 Board Note 1
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BCW33LT1
BCW33LT1/D
1N916
AN-569
BCW33LT1
BW33LT1
MPS3904
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Untitled
Abstract: No abstract text available
Text: BCX70GLT1 General Purpose Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 45 Vdc Collector −Base Voltage VCBO 45 Vdc Emitter −Base Voltage VEBO 5.0 Vdc IC 200 mAdc Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board 1
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BCX70GLT1
BCX70GLT1/D
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collector characteristic curve
Abstract: No abstract text available
Text: PJB649A PNP Epitaxial Silicon Transistor • • Complementary pair with PJD669A *Value at Tc = 25℃ TO-126 ABSOLUTE MAXIMUM RATINGS TA = 25 ℃ Characteristic Symbol Rating Unit Collector to base voltage VCBO -180 V Collector to emitter VCEO -160 V Pin : 1. Emitter
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PJB649A
PJD669A
O-126
PJB649ACK
O-126
collector characteristic curve
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2ST1480
Abstract: 2ST2480
Text: 2ST1480 2ST2480 Complementary power transistors Preliminary data Features • Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed ■ Fully insulated package Applications 3 ■ Voltage regulation ■
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2ST1480
2ST2480
OT-32FP
2ST2480
2ST1480
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2SC6060
Abstract: No abstract text available
Text: 2SC6060 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6060 Unit: mm Power Amplifier Applications Driver Stage Amplifier Applications ・High-transition frequency: fT = 100 MHz typ. Maximum Ratings (Tc = 25°C) Characteristic Symbol Rating Unit Collector-base voltage
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2SC6060
SC-67
2-10U1A
2SC6060
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2SA2142
Abstract: A2142 2SA21 PNP TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING A
Text: 2SA2142 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2142 High-Voltage Switching Applications • Unit: mm High breakdown voltage: VCEO = −600 V Absolute Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit Collector-base voltage VCBO
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2SA2142
2SA2142
A2142
2SA21
PNP TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING A
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA KTA1049 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • Low Collector-Emitter Saturation Voltage : VcE sat -_2.0V(Max.). • Complementary to KTC2028. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage
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OCR Scan
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KTC2028.
KTA1049
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KTA1273
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA KTA1273 EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURES • Complementary to KTC3205. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage V CBO -30 V Collector-Emitter Voltage
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KTA1273
KTC3205.
KTA1273
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2SB772
Abstract: No abstract text available
Text: 2SB772/2SB772S PNP Epitaxial Silicon Transistor Semiconductor AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING • Complement to 2SD882 TO-92 i ABSOLUTE MAXIMUM RATINGS ITa = 25 Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Bias Voltage
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2SB772/2SB772S
2SD882
2SB772
2SB772S
CoIleSB772S
2SB772
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2N4898
Abstract: 2N4899 2N4900 ib10s
Text: 2N4898, 2N4899, 2N4900 PNP ELECTRICAL CHARACTERISTICS Tc = 25°C unless otherwise noted Symbol Characteristic Min Max Unit OFF CHARACTERISTICS Collector - Emitter Sustaining Voltage (1) ( l c = 100mA, lB = 0 ) Collector Cutoff Current ( VCE = 20 V, lB = 0 )
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2N4898,
2N4899,
2N4900
100mA,
2N4898
2N4899
2N4898
2N4899
2N4900
ib10s
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2sb772 TO92
Abstract: 2SB772
Text: 2SB772/2SB772S PNP Epitaxial Silicon Transistor Semiconductor AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING • Complement to 2SD882 TO-92 ABSOLUTE MAXIMUM RATINGS ITa = 25 *C1 Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Bias Voltage
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2SB772/2SB772S
2SD882
2SB772S
2SB772
2sb772 TO92
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power ic 501 amp
Abstract: MJE305 MJE2955T ST MJE2955T MJE3055T
Text: MJE2955T PNP / MJE3055T NPN ELECTRICAL CHARACTERISTICS Tc = 25°C unless otherwise noted Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector - Emitter Sustaining Voltage (1) ( lc = 200 mA, lB = 0 ) Collector Cutoff Current (V CE = 3 0 V ,IB = 0 )
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MJE2955T
MJE3055T
15CFC
power ic 501 amp
MJE305
MJE2955T ST
MJE3055T
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA KTD882 EPITAXIAL PLANAR NPN TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING FEATURES • Complementary to KTB772. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage 40 V V CBO Collector-Emitter Voltage
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KTD882
KTB772.
Cycled50%
UUINTUNU01
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2N6298
Abstract: 2N6299 2N6300 2N6301
Text: 2N6298, 2N6299 PNP I 2N6300, 2N6301 NPN ELECTRICAL CHARACTERISTICS Tc = 25°C unless otherwise noted Symbol Characteristic Min Max Unit OFF CHARACTERISTICS Collector - Emitter Sustaining Voltage (1) ( lc = 100 mA, lB = 0 ) Collector Cutoff Current ( V CE = 30 V, lB = 0 )
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2N6298,
2N6299
2N6300,
2N6301
2N6300
2N6299,
2N6301
2N6300
2N6298
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S1732
Abstract: No abstract text available
Text: S1732 SILICON NPN EPITAXIAL TYPE Unit in mm MEDIUM POWER AMPLIFIER APPLICATIONS. 9.9MAX. 03.ZÌO.Z TV HORIZONTAL DRIVER APPICATIONS. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage v CB0 200 V Collector-Emitter Voltage v CE0
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S1732
Tc-25"
S1732
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Untitled
Abstract: No abstract text available
Text: 2SA1425 SILICON PNP EPITAXIAL TYPE PCT PROCESS U nit in mm PO W ER AM PLIFIER APPLICATIONS. DRIVER STAGE AM PLIFIER APPLICATIONS. • Complementary to 2SC3665. M A X IM U M RATINGS (Ta =25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage
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2SA1425
2SC3665.
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MG100Q2YS1
Abstract: IP100A Toshiba MG100Q2YS1
Text: MG100Q2YS1 ELECTRICAL CHARACTERISTICS Ta=25°C CHARACTERISTIC TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT ±500 nA Gate Leakage Current TGES VGE=±20V, VCE=0 - - Collector Cut-off Current ICES V c e =1200V, VGE=0 - - 2.0 mA 1200 - - V Collector-Emitter Breakdown Voltage
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MG100Q2YS1
100mA,
2-109B4A
MG100Q2YS1
IP100A
Toshiba MG100Q2YS1
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transistor 2sc3519
Abstract: 2SC3519 2SA1386 2SA1386A 2SC3519A transistor 2sa1386
Text: 2SC3519, 2SC3519A NPN ELECTRICAL CHARACTERISTICS Tc = 25°C unless otherwise noted Symbol Characteristic Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage ( lc= 25 mA, lB= 0 ) Collector Cutoff Current ( VrB= 160 V, L= 0 ) ( V CB= 1 8 0 V ,IE= 0 )
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2SA1386
2SA1386A
2SC3519
2SC3519A
2SC3519A
lc-10A
transistor 2sc3519
2SA1386
2SA1386A
transistor 2sa1386
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2SC2921
Abstract: transistor 2SC2921 2SA1215
Text: 2SC2921 NPN ELECTRICAL CHARACTERISTICS T c = 25°C unless otherwise noted Characteristic Symbol Min Max Unit O FF CHARACTERISTICS Collector-Emitter Breakdown Voltage ( l c = 2 5 m A ,lB= 0 ) V(BR)CEO Collector Cutoff Current ( V c b = 1 6 0 V , Ie = 0 )
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2SC2921
U-10A.
transistor 2SC2921
2SA1215
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SD1220 2 S D 1 220 T O SH IB A TRA N SISTO R PO W ER AM PLIFIER APPLICATIO NS • SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm Complementary to 2SB905 M A X IM U M RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage VCBO Collector-Emitter Voltage
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2SD1220
2SB905
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA K T A 1704 EPITAXIAL PLANAR PNP TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER HIGH FREQUENCY POWER AMPLIFIER FEATURES • Complementary to KTC2803. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage
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OCR Scan
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KTC2803.
Cycled50%
KTA1704
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