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    CODE MARKING NEC Search Results

    CODE MARKING NEC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    5446/BEA Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) Visit Rochester Electronics LLC Buy
    54LS190/BEA Rochester Electronics LLC 54LS190 - BCD Counter, 4-Bit Synchronous Up/Down, With Mode Control - Dual marked (M38510/31513BEA) Visit Rochester Electronics LLC Buy
    5447/BEA Rochester Electronics LLC 5447 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01007BEA) Visit Rochester Electronics LLC Buy
    TC4511BP Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, BCD-to-7-Segment Decoder, DIP16 Visit Toshiba Electronic Devices & Storage Corporation
    5962-8950303GC Rochester Electronics LLC ICM7555M - Dual Marked (ICM7555MTV/883) Visit Rochester Electronics LLC Buy

    CODE MARKING NEC Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    marking 702 sot23

    Abstract: 702 sot23 SP SOT23 ON5258 marking code 10 sot23 marking code p12 sot23 MARKING CODE 13 SOT23 Philips SOT23 code marking ON5257 marking code 702 SOT23
    Text: New Marking Codes SOT23 New Marking Codes SOT23 SOT23 Types from Hamburg, Hazel Grove and Nijmegen without a vendor code will be changed in their marking to a two digit product code and a one digit vendor code. The vendor code indicates the location of the assembly,


    Original     		BSR18A marking 702 sot23 702 sot23 SP SOT23 ON5258 marking code 10 sot23 marking code p12 sot23 MARKING CODE 13 SOT23 Philips SOT23 code marking ON5257 marking code 702 SOT23 PDF

    Untitled

    Abstract: No abstract text available
    Text: VBUS051BD-HD1 Vishay Semiconductors Low Capacitance, Single-Line ESD-Protection Diode FEATURES • • • • • • • 1 2 20856 20855 MARKING example only • XY • • • • 21121 Bar = cathode marking Y = type code (see table below) X = date code


    Original     		VBUS051BD-HD1 LLP1006-2L AEC-Q101 2002/95/EC 2002/96/EC 18-Jul-08 PDF

    VISHAY diode MARKING EG

    Abstract: No abstract text available
    Text: VBUS051BD-HD1 Vishay Semiconductors Low Capacitance, Single-Line ESD-Protection Diode FEATURES • • • • • • • 1 2 20856 20855 MARKING example only • XY • • • 21121 Bar = cathode marking Y = type code (see table below) X = date code Ultra compact LLP1006-2L package


    Original     		VBUS051BD-HD1 LLP1006-2L 2002/95/EC 2002/96/EC 11-Mar-11 VISHAY diode MARKING EG PDF

    Untitled

    Abstract: No abstract text available
    Text: VBUS051BD-HD1 www.vishay.com Vishay Semiconductors Low Capacitance, Single-Line ESD-Protection Diode FEATURES • • • • 1 2 20856 • • • 20855 MARKING example only XY • • • • 21121 Bar = cathode marking Y = type code (see table below)


    Original     		VBUS051BD-HD1 LLP1006-2L 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    omron F150-s1a

    Abstract: xw2z-200t OMRON XW2Z-200T F150-s1a omron f150 OMRON plc programming console manual XW2Z-200S-V F150-KP finder 40.31 ESC tower pro
    Text: V530-R160E, V530-R160EP 2-Dimensional Code Reader Fixed Type A code reader that handles dot peen markings! OMRON, in its pursuit of direct marking, now presents a 2-dimensional code reader that is ideal for reading dot peen markings. Integrating Objects and Information


    Original     		V530-R160E, V530-R160EP Q129-E1-02 omron F150-s1a xw2z-200t OMRON XW2Z-200T F150-s1a omron f150 OMRON plc programming console manual XW2Z-200S-V F150-KP finder 40.31 ESC tower pro PDF

    77V1254

    Abstract: IDT77V1254
    Text: IDT77V1254 HYLFH UUDWD D 1RWHV 6XSSOHPHQWDO ,QIRU ,QIRUPDWLRQ PDWLRQ The revision of the 77V1254 can be determined visually from the date code shown on the top marking. The date code is the third line of text. ∫ dt 77V1254 L25PG DZyywwA Date Code “yyww_” indicates Year, Week & Assembly location


    Original     		4521V77TDI 77V1254 77V1254 L25PG IDT77V1254 PDF

    Untitled

    Abstract: No abstract text available
    Text: ,'79 HYLFH UUDWD ' Notes Supplemental Infor Information mation The revision of the 77V1253 can be determined visually from the date code shown on the top marking. The date code is the third line of text. ∫ dt 77V1253 L25PG DZyywwA Date Code “yyww_” indicates Year, Week & Assembly location


    Original     		77V1253 77V1253 L25PG PDF

    Untitled

    Abstract: No abstract text available
    Text: VCUT0505B-HD1 Vishay Semiconductors Bidirectional Symmetrical BiSy Single Line ESD-Protection Diode in LLP1006-2L FEATURES • • • • • • • 2 1 21129 20855 MARKING (example only) • XY • • • 21121 Bar = pin 1marking X = date code Y = type code (see table below)


    Original     		VCUT0505B-HD1 LLP1006-2L LLP1006-2L 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: VCUT0505B-HD1 Vishay Semiconductors Bidirectional Symmetrical BiSy Single Line ESD-Protection Diode in LLP1006-2L FEATURES • • • • • • • 2 1 21129 20855 MARKING (example only) • XY • • • 21121 Bar = pin 1marking X = date code Y = type code (see table below)


    Original     		VCUT0505B-HD1 LLP1006-2L LLP1006-2L 2002/95/EC 2002/96/EC 11-Mar-11 PDF

    bft93

    Abstract: transistor BF 199
    Text: SIEMENS BFT93 PNP Silicon RF Transistor • For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration


    OCR Scan     		BFT93 BFT93 Q62702-F1063 OT-23 900MHz transistor BF 199 PDF

    smd MARKING CODE G72

    Abstract: No abstract text available
    Text: GaAs MMIC CGY 93P Data Sheet • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% MW-16 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code taped Package


    Original     		MW-16 Q62702-G72 GPW05969 smd MARKING CODE G72 PDF

    NCP5380 D

    Abstract: NCP5380 488AM
    Text: NCP5380, NCP5380A 7-Bit, Programmable, Single-Phase, Synchronous Buck Switching Regulator Controller http://onsemi.com General Description MARKING DIAGRAM 1 1 NCP5380 = Specific Device Code A = Assembly Location WL = Wafer Lot YY = Year WW = Work Week G = Pb Free Package


    Original     		NCP5380, NCP5380A NCP5380/D NCP5380 D NCP5380 488AM PDF

    Transistor BFT 93

    Abstract: Transistor BFT 10 Q62702-F1063 MARKING 93 40mAIC BFT93
    Text: BFT 93 PNP Silicon RF Transistor • For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package


    Original     		OT-23 Q62702-F1063 Dec-12-1996 Transistor BFT 93 Transistor BFT 10 Q62702-F1063 MARKING 93 40mAIC BFT93 PDF

    marking 93A

    Abstract: No abstract text available
    Text: SIEMENS BFP 93A NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Type


    OCR Scan     		Q62702-F1144 OT-143 900MHz marking 93A PDF

    30227

    Abstract: Transistor BFT 10 Q62702-F1062 w1s sot23
    Text: BFT 92 PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92P NPN ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration


    Original     		OT-23 Q62702-F1062 900MHz Dec-13-1996 30227 Transistor BFT 10 Q62702-F1062 w1s sot23 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFT92W PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92W NPN ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration


    OCR Scan     		BFT92W Q62702-F1681 OT-323 900MHz PDF

    BF 182 transistor

    Abstract: transistor 182 marking code M21
    Text: SIEMENS BFP 182 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • f j = 8GHz F = 1.2cfB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code


    OCR Scan     		900MHz OT-143 Q62702-F1396 BF 182 transistor transistor 182 marking code M21 PDF

    Q62702-F1396

    Abstract: BF 182 transistor
    Text: BFP 182 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz F = 1.2dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		900MHz OT-143 Q62702-F1396 Dec-12-1996 Q62702-F1396 BF 182 transistor PDF

    IC 2272

    Abstract: Q62702-F1601 GMA marking
    Text: BFP 182R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz F = 1.2dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		900MHz OT-143R Q62702-F1601 Jan-21-1997 IC 2272 Q62702-F1601 GMA marking PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP 182W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz F = 1.2dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code


    OCR Scan     		900MHz OT-343 BFP182W Q62702-F1502 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFR 182W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fr = 8GHz F = 1.2dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code


    OCR Scan     		900MHz Q62702-F1492 OT-323 IS211 PDF

    93 ab chip

    Abstract: No abstract text available
    Text: GaAs MMIC CGY 93 Data Sheet • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% MW-16 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code taped Package CGY 93


    Original     		MW-16 GPW05969 93 ab chip PDF

    MJE 340 transistor

    Abstract: Q62702-F1501
    Text: BFP 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		900MHz OT-343 Q62702-F1501 Aug-30-1996 MJE 340 transistor Q62702-F1501 PDF

    Q62702-F1491

    Abstract: GMA marking 175fF
    Text: BFR 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		900MHz OT-323 Q62702-F1491 Dec-11-1996 Q62702-F1491 GMA marking 175fF PDF