CMPD914 DIODE Search Results

CMPD914

Abstract: diode marking r5 318 SOT23
Contextual Info: Central CMPD914 Semiconductor Corp. SURFACE MOUNT HIGH SPEED SILICON SWITCHING DIODE DESCRIPTION: The Central Semiconductor CMPD914 is a ultrahigh speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package, designed for

diode C5d

Abstract: marking C5D transistor C5D CMPD914 TP10 diode marking r5 R5 SOT CMPD914 diode switching diode marking code R5 sot23
Contextual Info: Central CMPD914 TM Semiconductor Corp. SURFACE MOUNT HIGH SPEED SILICON SWITCHING DIODE DESCRIPTION: The Central Semiconductor CMPD914 is a ultrahigh speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package, designed for

sot-23 marking code T25

Abstract: CMPD914 sot-23 MARKING CODE JS
Contextual Info: Central CMPD914 Semiconductor Corp. HIGH SPEED SWITCHING DIODE DESCRIPTION: The Central Semiconductor CMPD914 is a ultrahigh speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package, designed for

diode C5d

Abstract: marking C5D TP10 CMPD914 CMPD914 diode
Contextual Info: Central CMPD914 TM Semiconductor Corp. HIGH SPEED SWITCHING DIODE DESCRIPTION: The Central Semiconductor CMPD914 is a ultrahigh speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package, designed for

CMPD914

Contextual Info: Central CMPD914 Semiconductor Corp. HIGH SPEED SWITCHING DIODE DESCRIPTION The CENTRAL SEMICONDUCTOR CMPD914 type is a ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package, designed for high speed

CMPD914

Abstract: diode By 129
Contextual Info: Central CMPD914 TM Semiconductor Corp. HIGH SPEED SWITCHING DIODE DESCRIPTION The CENTRAL SEMICONDUCTOR CMPD914 type is a ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package, designed for high speed

Contextual Info: CMPD914 SURFACE MOUNT HIGH SPEED SILICON SWITCHING DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD914 is a ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package, designed for high speed

diode C5d

Abstract: CMPD914 marking C5D CMPD914 diode
Contextual Info: CMPD914 SURFACE MOUNT HIGH SPEED SILICON SWITCHING DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD914 is a ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package, designed for high speed

CMPD914

Contextual Info: Central CMPD914 TM Sem i c o n d u c t o r C o r p . HIGH SPEED SWITCHING DIODE DESCRIPTION The C ENTRAL S E M IC O N D U C TO R CMPD914 type is a ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface

marking 321 sot-23

Contextual Info: Central' CMPD914E Semiconductor Corp. ENHANCED SPECIFICATION SURFACE MOUNT HIGH SPEED SILICON SWITCHING DIODE DESCRIPTION: The Central Semiconductor CMPD914E is an Enhanced version of the CMPD914 High Speed Switching Diode in a SOT-23 surface mount package, designed for high speed applications.

ED marking code diode

Abstract: sot-23 marking code T25 diode MARKING ED
Contextual Info: Central" CMPD914E semiconductor Corp. NHANCED SPECIFICATION SURFACE MOUNT HIGH SPEED SILICON SWITCHING DIODE DESCRIPTION: The Central Semiconductor CMPD914E is an Enhanced version of the CMPD914 High Speed Switching Diode in a SOT-23 surface mount package, designed for high speed applications.

Contextual Info: CMPD914 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current200m V(RRM)(V) Rep.Pk.Rev. Voltage100 t(rr) Max.(s) Rev.Rec. Time4.0n @I(F) (A) (Test Condition) @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)10m

F10 SOT23

Abstract: TP10 CMPD914 CMPD914E
Contextual Info: Central CMPD914E Semiconductor Corp. ENHANCED SPECIFICATION HIGH SPEED SWITCHING DIODE TM Description: The Central Semiconductor CMPD914E is an Enhanced version of the CMPD914 High Speed Switching Diode in a SOT-23 surface mount package, designed for high speed applications.

TP10

Abstract: CMPD914 CMPD914E
Contextual Info: Central CMPD914E ENHANCED SPECIFICATION TM Semiconductor Corp. SURFACE MOUNT HIGH SPEED SILICON SWITCHING DIODE DESCRIPTION: The Central Semiconductor CMPD914E is an Enhanced version of the CMPD914 High Speed Switching Diode in a SOT-23 surface mount package, designed for high speed applications.

Contextual Info: CMPD914E ENHANCED SPECIFICATION SURFACE MOUNT HIGH SPEED SILICON SWITCHING DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD914E is an Enhanced version of the CMPD914 High Speed Switching Diode in a SOT-23 surface mount package,

Contextual Info: Central C M PD 914 semiconductor Corp. HIGH SPEED SWITCHING DIODE DESCRIPTION The C EN TR AL SEM IC O N D U C TO R CMPD914 type is a ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package, designed for high speed

CMPD914

Abstract: CMPD914E
Contextual Info: CMPD914E ENHANCED SPECIFICATION SURFACE MOUNT HIGH SPEED SILICON SWITCHING DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD914E is an Enhanced version of the CMPD914 High Speed Switching Diode in a SOT-23 surface mount package,

Contextual Info: Central” CMPD914 Sem iconductor Corp. HIGH SPEED SWITCHING DIODE DESCRIPTION The CENTRAL S E M IC O N D U C T O R CM PD 914 type is a ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package, designed for high speed

CMPD914

Abstract: CMPD914 diode
Contextual Info: Central C M P D 914 S em ico ndu cto r Corp. HIGH SPEED SWITCHING DIODE DESCRIPTION The CENTRAL S E M IC O N D U C TO R CMPD914 type is a ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package, designed for high speed

1n4148

Abstract: 1n4148 die chip DIODE CHIP 1N4148 1N4148.1N4448 1N4154 1N4448 1N4454 1N914 1N914B CMPD4448
Contextual Info: PROCESS CPD63 Central Switching Diode TM Semiconductor Corp. High Speed Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 11 MILS Anode Bonding pad Area 3.3 x 3.3 MILS Top Side Metalization Al - 30,000Å Back Side Metalization

diode S 335

Abstract: 1n4148 die 1n4148 1n4148 die chip 1N4154 1N4448 1N4454 1N914 DIODE CHIP 1N4148 CMPD2836
Contextual Info: PROCESS CPD83V Switching Diode High Speed Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 3.35 x 3.35 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au-As - 13,000Å

CMPD2836

Abstract: CMPD2838 CMPD914 1N4454 CMPD7000 1N4148.1N4448 1N4148 1N4154 1N4448 1N914
Contextual Info: PROCESS CPD83V Switching Diode High Speed Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.1 MILS Anode Bonding pad Area 3.3 x 3.3 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au.As - 13,000Å

1n4148 die

Abstract: DIODE CHIP 1N4148 1n4148 die chip 1N4148.1N4448 1n914 equivalent 1N4454 1N4148 CMPD914 1N914B 1N4148 chip
Contextual Info: PROCESS CPD63 Switching Diode High Speed Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 11 MILS Anode Bonding pad Area 3.3 x 3.3 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å

1N4148 chip

Abstract: DIODE CHIP 1N4148 1n4148 die 1n4148 1n4148 die chip 1N4148.1N4448 CPD83V DIODE R3 1N4154 1N4448
Contextual Info: PROCESS CPD83V Switching Diode High Speed Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x11 MILS Die Thickness 7.1MILS Anode Bonding Pad Area 3.3 x 3.3 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au-As - 13,000Å