CMOS TRANSISTOR 0.35 UM Search Results

Taiyo 93-R 503

Abstract: NR4018T land pattern hsop 8 nr4018 NR6020T4R7M Nippon capacitors 269111-1 R1245N001-TR-FE
Contextual Info: R1245x SERIES 1.2A, 30V Step Down DC/DC converter NO.EA-269-111130 OUTLINE The R1245x series are CMOS-based Step-down DC/DC converter with internal N-channel high side Tr. The ON resistance of the built-in high-side transistor is 0.35Ω and the R1245 can provide the maximum 1.2A output

NR6020T4R7M

Abstract: R1245K003-TR R1245N NR6028T100M GRM32ER71A476 nr4018 Nippon capacitors NR4018T R1245N001 Taiyo 93-R 503
Contextual Info: R1245x SERIES 1.2A, 30V Step Down DC/DC converter NO.EA-269-120118 OUTLINE The R1245x series are CMOS-based Step-down DC/DC converter with internal N-channel high side Tr. The ON resistance of the built-in high-side transistor is 0.35Ω and the R1245 can provide the maximum 1.2A output

Contextual Info: R1 2 4 5 x SERI ES 1.2A, 30V Step Down DC/DC converter NO.EA-269-130322 OUTLINE The R1245x series are CMOS-based Step-down DC/DC converter with internal N-channel high side Tr. The ON resistance of the built-in high-side transistor is 0.35Ω and the R1245 can provide the maximum 1.2A output

Contextual Info: R1245x Series AEC-Q100 Grade 2 Certified 1.2 A, 30 V Step Down DC/DC Converter for Automotive Applications NO. EC-269-140311 OUTLINE The R1245x is a Step-down DC/DC converter with internal N-channel high side Tr. That is developed with CMOS process technology. The ON resistance of the built-in high-side transistor is 0.35 Ω and the R1245x can

MOS RM3

Abstract: mos rm3 data XO035 Silicon Image 1364 cmos transistor 0.35 um analog devices transistor tutorials "X-Fab" Core cell library 6E-08 opto mos application ESD "p-well" n-well"
Contextual Info: 0.35 µm CMOS Process Family XO035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular CMOS Technology For Fast Optical Applications Description XO035 is X-FAB’s specialized process for optoelectronic and high speed RF applications. It is especially suited for applications needing

vcsel spice model

Abstract: magnetic stripe data conversion ir sensor interface with 8051 laser diode spice modeling micron fuse resistors "x-ray detector" VCSEL photodiode L035 interfacing 8051 with magnetic stripe readers metal detector plans
Contextual Info: RadHard Mixed-Signal Overview Aeroflex Colorado Springs April 2007 www.aeroflex.com/RadHardASIC Mixed-Signal Product Line T What we do…. – We connect real world, analog signals to digital systems – We provide the critical link between sensors and information systems

1 kilo ohm resistor specifications

Abstract: RESISTOR 10 KILO OHM 100 KILO OHM RESISTOR atmel 802 polysilicon resistor atmel 813 1 kilo ohm resistor 10 kilo ohm resistor 3.3 kilo ohm resistor RESISTOR 1 KILO OHM
Contextual Info: Standard Features • • • • • • • • 3.3V CMOS Transistors NPN Transistors Lateral PNP Transistors Analog Resistors Mono-Silicon Capacitor Schottky Diode Poly Fusing Element Multilevel Metallization-Metal Layers 1-3 Optional Features • • •

MOS RM3

Contextual Info: 0.35 µm CMOS Process Family XO035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular CMOS Technology For Fast Optical Applications Description XO035 is X-FAB’s specialized process for optoelectronic and high speed RF applications. It is especially suited for applications needing

mos rm3 data

Abstract: MOS RM3 BSIM3V3 XH035 RM4L bsim3 dw-mo MICRON POWER RESISTOR Mos Q100 analog devices transistor tutorials
Contextual Info: 0.35 µm CMOS Process Family XA035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron High Temperature Modular CMOS Technology Description The XA035 Series is X-FAB‘s 0.35 Micron High Temperature CMOS Technology. Main target applications are high temperature automotive and

CMOS

Abstract: AF32K8AF25 NMOS native pspice model resistor bsim3 6T SRAM micron cmos sensor connection BSIM3 nmos transistor pmos Vt bsim3 model
Contextual Info: 0.25 m CMOS Process FC025 MIXED-SIGNAL FOUNDRY EXPERTS 0.25 Micron CMOS Technology Description Key Features Applications Quality Assurance Deliverables Digital Libraries Analog Libraries Primitive Devices The FC025 series is X-FAB’s 0.25-micron Modular

MOS RM3

Abstract: mos rm3 data "X-Fab" Core cell library ESD "p-well" n-well" XH035 0.18 um CMOS Spiral Inductor technology bsim3v3 RM3 transistors Q100 analog devices transistor tutorials
Contextual Info: 0.35 µm CMOS Process Family XA035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron High Temperature Modular CMOS Technology Description The XA035 Series is X-FAB‘s 0.35 Micron High Temperature CMOS Technology. Main target applications are high temperature automotive and

TUNABLE VCO 10GHZ

Abstract: MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT 0.18 um CMOS VCO 10GHZ oscillator 8563E spectrum analyzer
Contextual Info: A 10GHz CMOS Distributed Voltage Controlled Oscillator1 Hui Wu and Ali Hajimiri Department of Electrical Engineering, California Institute of Technology, Pasadena, CA 91125, USA Abstract A 10 GHz CMOS distributed voltage controlled oscillator DVCO is designed in a 0.35µm BiCMOS process technology using only CMOS transistors. The oscillator achieves a

XH035 library

Abstract: depl "X-Fab" Core cell library nmos transistor 0.35 um cmos transistor 0.35 um CMOS spice model Q100 XH035 analog devices transistor tutorials MOS RM3
Contextual Info: 0.35 µm CMOS Process Family XA035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron High Temperature Modular CMOS Technology Description The XA035 Series is X-FAB‘s 0.35 Micron High Temperature CMOS Technology. Main target applications are high temperature automotive and

Contextual Info: Applications • 2G / 3G / 4G wireless systems • LTE transceivers • UHF/VHF public safety bands • Macro base stations • Micro base stations • Pico base stations • Femto base stations • GSM, UMTS, multistandard transceivers • Test and measurement

Contextual Info: $ TAIW AN TS9007 SEMICONDUCTOR 3Û0mA Low Noise CMOS LDO b RoHS CO M PLIANCE SOT-25 5 4 •ÿt 1 23 P in D e fin itio n : 1. 2. 3. 4. SOT-23 Input Ground Enable Bypass P in D e fin itio n : 1. Ground 2. Output 3. Input 1 2 5. Output General D escription The TS90Û7 series is 3ÛÛmA ultra-low-noise LDO especially designed for battery-power RF and wireless

cmos transistor 0.35 um

Abstract: UM207 ua 471 TRANSISTOR 641 nmos transistor 0.35 um 815 transistor 0.35Um 1P4M
Contextual Info: 0.35um 1P4M Embedded Flat ROM 3.3V, 5.0V updated in 2005.04.05 Features ƒ Vdd Core/IO 3.3V/3.3V, 5V/5V ƒ Substrate P-type (100), Non-EPI ƒ Well Retrograde Twin Well (NW, PW) ƒ Isolation Conventional LOCOS ƒ Transistor Single-Gate CMOS Channel Surface channel NMOS, Buried channel PMOS

all transistor

Abstract: 2P4M transistor 2p4m nmos transistor 0.35 um 73aa cmos transistor 0.35 um of 2p4m
Contextual Info: 0.30um 2P4M High Voltage 13.5V /13.5V updated in 2005.04.05 Features ƒ Vdd Logic, High Voltage 3.3V, 13.5V/ 13.5V ƒ Substrate P-type (100), Non-Epi ƒ Well Logic : Retrograded Twin Well (Nwell, Pwell) HV : Diffused Twin Well (Hnwell, Hpwell) ƒ Isolation

8841B

Abstract: 8841H 8807aeha 8841re AME8841 8841K K 2645 transistor
Contextual Info: Analog Microelectronics, Inc. AME8841 600mA CMOS LDO n General Description n Features The AME8841 linear regulator features low quiescent current 30µA typ. with low dropout voltage, making it ideal for battery applications. The space-saving SO-8 package is attractive for "Pocket” and "Hand Held" applications.

DNDA

Contextual Info: 1.0 m Process Family: XDH10 Modular 1.0μm 650V Trench Insulated BCD Process DESCRIPTION XDH10 is X-Fab´s dielectric trench insulated smart power technology. Main target applications are analog switch ICs, driver ICs for capacitive, inductive and resistive loads and EL / piezo driver ICs for

A2 sot-25 MARKING

Abstract: c2555 8812 sot-25 AME8801 AME8801AEEV AME8801BEEV AME8801CEEV AME8801DEEV AME8801EEEV
Contextual Info: Analog Microelectronics, Inc. AME8801/8812/8840 300mA CMOS LDO n General Description n Features The AME8801/8840 family of positive, linear regulators feature low quiescent current 30µA typ. with low dropout voltage, making them ideal for battery applications.

AME8802

Abstract: AME8802AEEV AME8802BEEV AME8802EEEV AME8802FEEV AME8802GEEV AME8802HEEV AME8802IEEV
Contextual Info: Analog Microelectronics, Inc. AME8802 300mA CMOS LDO n General Description n Features The AME8802 family of positive, linear regulators feature low quiescent current 30µA typ. with low dropout voltage, making them ideal for battery applications. The space-saving SOT-23-5 package is attractive for

0.35Um 1P4M

Abstract: nmos transistor 0.35 um
Contextual Info: 0.35um 1P4M Logic 3.3V updated in 2005.03.24 Features ƒ Vdd Core/IO 3.3V / 5V ƒ Starting Material P(100), Non-Epi ƒ Well Retrograde Twin Well Structure ƒ Isolation Conventional LOCOS ƒ Transistor Dual Gate CMOS Gate Length (Ldrawn) 0.35um Channel Buried Channel PMOS

2P4M

Abstract: cmos transistor 0.35 um transistor 2p4m 0.35Um 2P4M of 2p4m
Contextual Info: 0.35um 2P4M High Voltage 18V / 18V updated in 2005.03.24 Features ƒ Voltage Logic,High Voltage ƒ Starting material 3.3V,18V/18V P-type (100), Non-Epi ƒ Well Structure Logic : Retrograded Twin well (Nwell, Pwell) HV : Diffused Twin well (HNwell, HPwell)

2P4M P 82

Abstract: of 2p4m transistor 2p4m 2P4M cmos transistor 0.35 um nmos transistor 0.35 um 0.35 um CMOS gate area 0.35um cmos transistor parameters
Contextual Info: 0.35um 2P4M Mixed Signal 3.3V / 5V updated in 2005.03.24 Features ƒ Vdd Core/IO 3.3V / 5V ƒ Starting Material P(100), Non-Epi ƒ Well Retrograde Twin Well Structure ƒ Isolation Conventional LOCOS ƒ Transistor Dual Gate CMOS Gate Length (Ldrawn) 0.35um