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    CMOS SRAM 16 Search Results

    CMOS SRAM 16 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    HM3-6504B-9 Rochester Electronics LLC Standard SRAM, 4KX1, 220ns, CMOS, PDIP18 Visit Rochester Electronics LLC Buy
    HM1-6516-9 Rochester Electronics LLC Standard SRAM, 2KX8, 200ns, CMOS, CDIP24 Visit Rochester Electronics LLC Buy
    HM1-6516B/B Rochester Electronics LLC HM1-6516 - Standard SRAM, 2KX8, 200ns, CMOS Visit Rochester Electronics LLC Buy
    HM1-6504/B Rochester Electronics LLC HM1-6504 - Standard SRAM, 256X4, 300ns, CMOS Visit Rochester Electronics LLC Buy
    54C89J/B Rochester Electronics LLC 54C89 - Standard SRAM, 16X4, 910ns, CMOS Visit Rochester Electronics LLC Buy

    CMOS SRAM 16 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    megabit

    Abstract: No abstract text available
    Text: 8 Megabit 3.3 Volt CMOS SRAM 16 Megabit 3.3 Volt CMOS SRAM PRELIMINARY DESCRIPTION: The LP-Stack series is a family of interchangeable memory modules. The 4 Megabit SRAM is a member of this family which utilizes the new and innovative space saving TSOP


    Original     		PDF 100ns 30A230-10 megabit

    SM-1994

    Abstract: No abstract text available
    Text: HY62UF16101C Series 64Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16101C is a high speed, super low power and 1M bit full CMOS SRAM organized as 65,536 words by 16bit. The HY62UF16101C uses high performance full CMOS process technology


    Original     		PDF HY62UF16101C 64Kx16bit 16bit. 400mil Voltage2UF16101C 48ball SM-1994. SM-1994

    Untitled

    Abstract: No abstract text available
    Text: HY62SF16100C Series 64Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62SF16100C is a high speed, super low power and 1M bit full CMOS SRAM organized as 65,536 words by 16bit. The HY62SF16100C uses high performance full CMOS process technology


    Original     		PDF HY62SF16100C 64Kx16bit 16bit. HY62ECKAGE 48ball SM-1994.

    Untitled

    Abstract: No abstract text available
    Text: HY62QF16100C Series 64Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62QF16100C is a high speed, super low power and 1M bit full CMOS SRAM organized as 65,536 words by 16bit. The HY62QF16100C uses high performance full CMOS process technology


    Original     		PDF HY62QF16100C 64Kx16bit 16bit. HY62QCKAGE 48ball SM-1994.

    Untitled

    Abstract: No abstract text available
    Text: HY62SF16101C Series 64Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62SF16101C is a high speed, super low power and 1M bit full CMOS SRAM organized as 65,536 words by 16bit. The HY62SF16101C uses high performance full CMOS process technology


    Original     		PDF HY62SF16101C 64Kx16bit 16bit. HY62SKAGE 48ball SM-1994.

    Untitled

    Abstract: No abstract text available
    Text: HY62SF16201A Series 128Kx16bit full CMOS SRAM DESCRIPTION FEATURES The HY62SF16201A is a high speed, low power and 2M bit full CMOS SRAM organized as 131,072 words by 16bit. The HY62SF16201A uses high performance full CMOS process technology and designed for high speed low


    Original     		PDF HY62SF16201A 128Kx16bit 16bit. HY62SF16201A-I 48ball 5M-1994.

    bq2201pn

    Abstract: bq2201 BQ2201SN
    Text: bq2201 SRAM Nonvolatile Controller Unit Features General Description ➤ Power monitoring and switching for 3-volt battery-backup applications The CMOS bq2201 SRAM Nonvolatile Controller Unit provides all necessary functions for converting a standard CMOS SRAM into nonvolatile


    Original     		PDF bq2201 bq2201 bq2201pn BQ2201SN

    FG220

    Abstract: No abstract text available
    Text: bq2201 SRAM Nonvolatile Controller Unit Features General Description ➤ Power monitoring and switching for 3-volt battery-backup applications The CMOS bq2201 SRAM Nonvolatile Controller Unit provides all necessary functions for converting a standard CMOS SRAM into nonvolatile


    Original     		PDF bq2201 bq2201 FG220

    Untitled

    Abstract: No abstract text available
    Text: bq2201 SRAM Nonvolatile Controller Unit Features General Description ➤ Power monitoring and switching for 3-volt battery-backup applications The CMOS bq2201 SRAM Nonvolatile Controller Unit provides all necessary functions for converting a standard CMOS SRAM into nonvolatile


    Original     		PDF bq2201 bq2201

    Untitled

    Abstract: No abstract text available
    Text: bq2201 SRAM Nonvolatile Controller Unit Features General Description ➤ Power monitoring and switching for 3-volt battery-backup applications The CMOS bq2201 SRAM Nonvolatile Controller Unit provides all necessary functions for converting a standard CMOS SRAM into nonvolatile


    Original     		PDF bq2201 bq2201

    Untitled

    Abstract: No abstract text available
    Text: bq2201 SRAM Nonvolatile Controller Unit Features General Description ➤ Power monitoring and switching for 3-volt battery-backup applications The CMOS bq2201 SRAM Nonvolatile Controller Unit provides all necessary functions for converting a standard CMOS SRAM into nonvolatile


    Original     		PDF bq2201 bq2201

    Untitled

    Abstract: No abstract text available
    Text: bq2201 SRAM Nonvolatile Controller Unit Features General Description ➤ Power monitoring and switching for 3-volt battery-backup applications The CMOS bq2201 SRAM Nonvolatile Controller Unit provides all necessary functions for converting a standard CMOS SRAM into nonvolatile


    Original     		PDF bq2201 bq2201

    LP621024DM-70LLF

    Abstract: LP621024DV-70LLF LP621024D-70LLF LP621024D-55LLF LP621024 LP621024DM70LLF LP621024D LP621024D-55LL LP621024D-70LL LP621024DM-55LL
    Text: LP621024D Series 128K X 8 BIT CMOS SRAM Document Title 128K X 8 BIT CMOS SRAM Revision History Rev. No. 1.1 History Issue Date Remark Add Pb-Free package type August 19, 2004 Final August, 2004, Version 1.1 AMIC Technology, Corp. LP621024D Series 128K X 8 BIT CMOS SRAM


    Original     		PDF LP621024D 32-pin LP621024DM-70LLF LP621024DV-70LLF LP621024D-70LLF LP621024D-55LLF LP621024 LP621024DM70LLF LP621024D-55LL LP621024D-70LL LP621024DM-55LL

    Untitled

    Abstract: No abstract text available
    Text: bq2201 SRAM Nonvolatile Controller Unit Features General Description ➤ Power monitoring and switching for 3-volt battery-backup applications The CMOS bq2201 SRAM Nonvolatile Controller Unit provides all necessary functions for converting a standard CMOS SRAM into nonvolatile


    Original     		PDF bq2201 bq2201

    Untitled

    Abstract: No abstract text available
    Text: bq2201 SRAM Nonvolatile Controller Unit Features General Description ➤ Power monitoring and switching for 3-volt battery-backup applications The CMOS bq2201 SRAM Nonvolatile Controller Unit provides all necessary functions for converting a standard CMOS SRAM into nonvolatile


    Original     		PDF bq2201 bq2201

    Untitled

    Abstract: No abstract text available
    Text: bq2201 SRAM Nonvolatile Controller Unit Features General Description ➤ Power monitoring and switching for 3-volt battery-backup applications The CMOS bq2201 SRAM Nonvolatile Controller Unit provides all necessary functions for converting a standard CMOS SRAM into nonvolatile


    Original     		PDF bq2201 bq2201

    Untitled

    Abstract: No abstract text available
    Text: bq2201 SRAM Nonvolatile Controller Unit Features General Description ➤ Power monitoring and switching for 3-volt battery-backup applications The CMOS bq2201 SRAM Nonvolatile Controller Unit provides all necessary functions for converting a standard CMOS SRAM into nonvolatile


    Original     		PDF bq2201 bq2201

    Untitled

    Abstract: No abstract text available
    Text: HY62UF16101 Series 64Kx16bit full CMOS SRAM DESCRIPTION FEATURES The HY62UF16101 is a high speed, low power and 1M bit full CMOS SRAM organized as 65,536 words by 16bit. The HY62UF16101 uses high performance full CMOS process technology and designed for high speed low power circuit


    Original     		PDF HY62UF16101 64Kx16bit 16bit. 48ball I/O16 5M-1994.

    Untitled

    Abstract: No abstract text available
    Text: HY62SF16803A Series 512Kx16bit full CMOS SRAM Preliminary DESCRIPTION FEATURES The HY62SF16803A is a high speed, super low power and 8Mbit full CMOS SRAM organized as 524,288 words by 16bits. The HY62SF16803A uses high performance full CMOS process technology and is designed for high speed and


    Original     		PDF HY62SF16803A 512Kx16bit 16bits. HY62SF16803A-I 48ball 5M-1994.

    Untitled

    Abstract: No abstract text available
    Text: HY62QF16201A Series 128Kx16bit full CMOS SRAM DESCRIPTION FEATURES The HY62QF16201A is a high speed, super low power and 2Mbit full CMOS SRAM organized as 131,072 words by 16bits. The HY62QF16201A uses high performance full CMOS process technology and is designed for high speed and


    Original     		PDF HY62QF16201A 128Kx16bit 16bits. 48-FBGA 48ball 5M-1994.

    sram card 60 pin

    Abstract: 128k sram card 60 pin battery
    Text: JEIDA Ver. 3 STATIC RAM VARIATION Part Number Memory Size AWB129JS10 AWB257JS10 AWB513JS10 128K Bytes 256K Bytes 512K Bytes Description 64K X 16 bits JEIDA Ver.3 MIX CMOS SRAM CARD 128K X 16 bits JEIDA Ver.3 MIX CMOS SRAM CARD 256K X 16 bits JEIDA Ver.3 MIX CMOS SRAM CARD


    OCR Scan     		PDF AWB129JS10 AWB257JS10 AWB513JS10 AWB257, AWB513 AWB513 sram card 60 pin 128k sram card 60 pin battery

    marking 1bc

    Abstract: No abstract text available
    Text: HY62QF16406D Series 256K x 16bit full CMOS SRAM Preliminary DESCRIPTION FEATURES The HV62QF16406D is a high speed, super low power and 4Mbit full CMOS SRAM organized as 256K words by 16bits. The HY62QF16406D uses high performance full CMOS process technology


    OCR Scan     		PDF HY62QF16406D 16bit HV62QF16406D 16bits. 48-ball HYQF6406D marking 1bc

    Untitled

    Abstract: No abstract text available
    Text: HY62QF16404D Series 256K X 16bit full CMOS SRAM Preliminary DESCRIPTION FEATURES The HY62QF16404D is a high speed, super low power and 4Mbit full CMOS SRAM organized as 256K words by 16bits. The HY62QF16404D uses high performance full CMOS process technology


    OCR Scan     		PDF HY62QF16404D 16bit 16bits. 48-ball x16bit HYQF6404D

    Untitled

    Abstract: No abstract text available
    Text: DENSE-PAC M icrosystem s 16 Megabit CMOS SRAM 32 Megabit CMOS SRAM Memory Device ADVANCED INFORMATION DESCRIPTION: The PL-Stack series is a family of interchangeable memory modules. The 4 Megabit SRAM is a member of this family which utilizes the new and innovative space saving TSOP


    OCR Scan     		PDF 512Kx 30A230-00