CMOS GATE ARRAYS TOSHIBA Search Results

TC17G Series

Abstract: 74HC family Application Notes toshiba tc110g toshiba tc17g SEMI-E-S1001 TC110G38 1 gate toshiba logic TTL Logic Family list DAP macro language TOSHIBA Gate array macro cell
Contextual Info: TOSHIBA ASIC TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC. CMOS GATE ARRAY TC1TOGSERESGITE /«RAY Toshiba introduces the new generation gate arrays — The TC110G series— capable of integrating 5X more than the TC17G series. Uses Toshiba’s proprietary HC2MOS/VLSI

toshiba tc110g

Abstract: toshiba toggle nand TC17G Series toshiba tc17g TC110G11 specifications of basic logic gates 74 series TC17G TC110G21 TC110G38 VLSI TECHNOLOGY
Contextual Info: ASIC TOSHIBA TOSHIBA AMERICA ELECTRONIC COMPONENTS, IIMC. CMOS GATE ARRAY TCllOG SERIES GITE ¿RRAY Toshiba introduces the new generation gate arrays — The TC110G series— capable of integrating 5X more than the TC17G series. Uses Toshiba’s proprietary HC2MOS/VLSI

Contextual Info: TOSHIBA ‘ arsai "<ÖS TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC. TC160G/160E CMOS Gate Array/Embedded Array 0.8 micron Description Features The TC160G and TC160E with embedded functions series of 0.8 micron gate arrays has a 300ps gate speed and up to 21 OK* usable gates. These members of the DSA family

siemens master drive circuit diagram

Abstract: SR flip flop IC toshiba tc110g TC110G jk flip flop to d flip flop conversion SC11C1 JK flip flop IC siemens Nand gate scxc1 SR flip flop IC pin diagram
Contextual Info: SIEM EN S ASIC Product Description SCxC1 Family CMOS Gate Arrays FEATURES • Alternate source of Toshiba TC110G family ■ Densities up to 129,000 raw gates ■ Channelless “ sea of gates” architecture ■ 1.5 firn drawn CMOS technology, scalable to 1.0 /¿m

STK 407 040

Abstract: toshiba tc110g toshiba tc17g STK 407 240 TC17G Series CMOS GATE ARRAYs toshiba TC110G08 LU 2705 TC17G sw 44585
Contextual Info: Mar. ’88 Version 3 TOSHIBA CMOS GATE ARRAY TC1XDG SERIESSITE /«RAY Toshiba introduces the new generation gate arrays — The TC110G series— capable of integrating 5X more than the TC17G series. Uses Toshiba’s proprietary HC 2MOS/VLSI technologies. State of the art processing with high

Contextual Info: Mar. 88 Version 3 TOSHIBA CMOS GATE ARRAY O O G SKIES GITE /«RAY Toshiba introduces the new generation gate arrays — The TC110G series— capable of integrating 5X more than the TC17G series. Uses Toshiba’s proprietary HC2MOS/VLSI technologies. State of the art processing with high

TC150GC8

Abstract: TC150GH2 toshiba tc110g TC140G toshiba tc140g TC110G TC150G89 toshiba toggle nand tc120g
Contextual Info: TOSHIBA TOSHIBA. A M E R IC A ELECTRONIC C O M PO N E N TS , IIMC. 1.0 micron TC150G CMOS Gate Array Description Features The TC150G series of triple-layer metal, 1.0 micron gate arrays has a 0.4ns gate speed and up to 100K useable gates— one of the highest in the industry.

Contextual Info: TOSHIBA ASIC TO S H IB A A M E R IC A ELECTRO NIC C O M P O N E N T S , INC. CMOS ASIC 1C120G SERESGITE /«RAY Toshiba Corporation has introduced a series of gate arrays that use a 1.0-micron CMOS process to reduce gate delays by 35%. Applications include consolidating high-speed circuits into a single package, especially in highperformance systems.

Contextual Info: TOSHIBA TO S H IB A A M E R IC A ELECTRONIC C O M P O N E N TS , INC. 1.0 micron TC150G CMOS Gate Array Description Features The TC150G series of triple-layer metal, 1.0 micron gate arrays has a 0.4ns gate speed and up to 10OK useable gates—one of the highest in the industry.

TC140G44

Abstract: TC140G27 toshiba tc140g
Contextual Info: TOSHIBA TO SH IB A A M E R IC A ELECTRO NIC C O M P O N E N T S , INC. 1.0 micron TC140G CMOS Gate Array Description Features The TC140G series of 1.0 micron gate arrays has a 0.4ns gate speed and up to 172K raw gates. — Provides a 35% reduction in delay times compared to

74LS82

Abstract: 74245 BIDIRECTIONAL BUFFER IC ic 4583 schmitt trigger core bit excess 3 adder using IC 7483 advantages for ic 7473 4 BIT COUNTER 74669 la 4508 ic schematic diagram XF107 74295 random number generator by using ic 4011 and 4017
Contextual Info: General Features The SCxD4 series of high performance CMOS gate arrays offers the user the ability to realise customised VLSI inte­ grated circuits featuring the speed performance previously obtainable only with bipolar technologies whilst retaining all the advantages of CMOS technology; low power consum p­

toshiba tc110g

Abstract: CMOS GATE ARRAYs toshiba TC110G toshiba toggle nand 74HC inverter tri-state output TOSHIBA Gate array macro cell 110G TC120G38 TC120G75 TC120GA0
Contextual Info: ASIC TOSH IBA TO S H IB A A M E R IC A ELECTRONIC C O M P O N E N T S , INC. CMOS ASIC TC120G SKES GOTE-4RRAY Toshiba Corporation has introduced a series of gate arrays that use a 1.0-micron CMOS process to reduce gate delays by 35%. Applications include consolidating high-speed circuits into a single package, especially in high­

TC160G11

Abstract: TOSHIBA TC160G TC160G22 TC160G33 tc160g16 toshiba tc110g TC160G TC163G TC140G TC110G
Contextual Info: TOSHIBA . TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC. Preliminary TC160G and TC163G CMOS 0.8 micron Gate Arrays for Low Voltage Operation 3V/3.3V Description The T C 160G and T C 163G 0.8 m icro n ga te arra y series op e ra te at 3 V ± 0 .3 V or 3 .3 V ± 0 .3 V low vo lta g e . T hey have

TC160G33

Abstract: TC160G11 TC160G22 TC160G16 TC160G70 TC140G TC160G
Contextual Info: TOSHIBA T O S H I B A A M E R I C A E L E C T R O N IC C O M P O N E N T S , I N C . Preliminary TC160G and TC163G CMOS 0.8 micron Gate Arrays for Low Voltage Operation 3V/3.3V Description The T C 160G and T C 163G 0.8 m icro n ga te arra y series o p e ra te at 3 V ± 0 .3 V or 3 .3 V ± 0 .3 V low vo lta g e . T hey have

TC170G35

Abstract: TC170G TAB 173 AP TC170G45 Edison time delay CMOS GATE ARRAYs toshiba XBRL16
Contextual Info: TOSHIBA TC170G CMOS Gate Array 0.7\xm, 5.0V ASICs The 0.7 urn, 5VTC170G allows higher system perfor­ mance and device integration with lower power than previous generation 5V gate array families Benefits • Advanced 0.7 micron CMOS process with fast 260ps gate

CMOS GATE ARRAYs toshiba

Abstract: Actel part number die code actel device actel date code CMOS GATE ARRAYs flextronics ACTEL qfp 352
Contextual Info: D A T A S H E E T 0.35µ Gate Arrays Description Flextronics Semiconductor’s 0.35µ family of gate arrays provides retargeting solutions for FPGA and Gate Array conversions. The Encore!Plus program is a retargeting service featuring direct replacement of

tc140g

Abstract: TC140G37 TC140G27 TC140G54 TC140G44 TC140G12 TC140G68 toshiba tc140g27 TC140G09 TC140G18
Contextual Info: *1A’ li ' 'S/Si _ TOSHIBA 1t TOSHIBA AMERICA ELECTRONIC COMPOMEWTS, IIMC 1.0 micron TC140G CMOS Gate Array Features Description • Process: 1.0 micron drawn HC2MOS Si-gate double layer metal Raw gates: 2K to 172K Usable gates: up to 68K Gate speed: 0.4ns 2-input NAND gate, fanout - 2, tpd.

ARM1136J-S

Abstract: ELDEC TOSHIBA TC160 ARM1136J TOSHIBA cmos image 1995 tc190c CMOS GATE ARRAYs toshiba TC190G TC280 Celaro
Contextual Info: 2007-3 PRODUCT GUIDE CMOS ASICs To ensure competitiveness in the marketplace, you will need to produce more sophisticated, more technology-intensive and higher value-added products, using a process of technological innovation and systematic marketing. Toshiba's application-specific

TC180G21

Abstract: single port ram TC180 TC180G TC160G AM 770 DENSITY TRANSMITTER Toshiba NAND 67 Bga tc8565 toshiba graphics tc183G
Contextual Info: TOSHIBA TC180 Series CMOS ASIC Family 3.0V/3.3V, 0.5nm1 The TC180 series increases system performance and device integration while reducing power. Benefits • True 3.0/3,3V 0.5 micron CMOS process with fast 230ps gate delays • Reduced power consumption makes lower cost plastic packag­

HC165A

Abstract: TC9525F VHC165 TC9534N HC4050A HC4520A TC8215uf HC4049A TC24SC HCT164A
Contextual Info: MOS Industrial ICs AD Converter - je Conversion Resolution Time Type No. Conversion Mode Input Channel TC5090AP 8b it 2ms Integration method 1 TC5091AP Bbit 2ms " 6 TC5092AP 13bit 8.2ms ’ 8 TC5093AP 8b it 50ps Successive approximation 8 Output Formst

TC180G21

Abstract: TC180G TC160G single port RAM TC180 0724 XBRL16 toshiba ASIC
Contextual Info: TOSHIBA TC180 Series CMOS ASIC Family 3.0V/3.3V, 0.5nm1 The TC180 series increases system performance and device integration while reducing power. Benefits • True 3.0/3.3V 0.5 micron CMOS process with fast 230ps gate delays • Reduced power consumption makes lower cost plastic packag­

74HC inverter tri-state output

Abstract: TC140G toshiba tc110g TC14L010 74HC buffer tri-state output bt12 74hc* open drain buffer FP144 TC11L003 TC110G
Contextual Info: TOSHIBA ASIC TO SH IB A A M ER ICA E LE C T R O N IC CO M PO N EN TS, INC. IEC 1 4 1990 TC11L CMOS Gate Array TC14L CMOS Gate Array These tw o gate array fam ilies provide a unique solution for designs which have a high ratio of pin count to gates. T oshiba’s optim ized assem bly tech n o lo g y allow s the use of

TOSHIBA TC260

Abstract: TC260 TOSHIBA standard cell library CMOS GATE ARRAYs toshiba TC260 1 gate toshiba logic asic flow
Contextual Info: TOSHIBA TC260 SLI ASIC Family with Embedded DRAM 0.14µm/1.5V Description The TC260 family of System-Level Integration SLI ASICs are designed for applications needing the highest performance with the smallest die size. The TC260 employs the highest-density interconnects,

DRAM "deep trench" capacitor

Abstract: IC 64256 RAM embedded dram timing TC260 TOSHIBA standard cell library TC260 TOSHIBA GATE ARRAY 1 gate toshiba logic 64256
Contextual Info: TOSHIBA TC260 SLI ASIC Family with Embedded DRAM 0.14µm/1.5V Description The TC260 family of System-Level Integration SLI ASICs are designed for applications needing the highest performance with the smallest die size. The TC260 employs the highest-density interconnects,