CMOS AOI Search Results

mcm2018a

Abstract: sun hold RAS 0610 cqq 765 RT IC HX 710B U256D
Contextual Info: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information

sun hold RAS 0610

Abstract: oki Logic Motorola transistor 7144 MSC2304 M5M41000
Contextual Info: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information

5Bp smd transistor data

Abstract: 5Bp smd TRANSISTOR SMD 2X y CK 158 SMD WL18 TRANSISTOR SMD 2X K 100CLCC cmos based on tanner tools operation of sr latch using nor gates TRANSISTOR SMD 2X 7
Contextual Info: Order this data sheet by HDCM IL/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Military HDC Series HDC Series CMOS Arrays High Performance Triple Layer Metal 1.0 Micron CMOS Arrays Built on a 1.0 micron, triple-layer metal CMOS process, the HDC Series represents a

3 input or gates TTL

Abstract: cmos XOR Gates Nand gate Crystal Oscillator 4-input nand gates ttl XOR GATES "resistor set oscillator" dip TTL XOR Gates 5D208 cmos XOR schmitt trigger toggle nand
Contextual Info: HT3A CMOS Low Cost Gate Array General Features • • • • • • • • 5µm LOVAG CMOS technology Operating voltage: 2.0V~4.8V Input/Output CMOS compatible High noise immunity Six array bases cover the range from 212~890 gates Enhanced reliability

KM684000ALG-7L

Abstract: KM684000ALT-5L km684000alg KM684000ALP-5L 32SOP KM684000ALP-5 KM684000ALP-7 KM684000ALP-7L
Contextual Info: KM684000A Family CMOS SRAM 512K x8 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION • Process Technology : 0.4nm CMOS • Organization: 512Kx8 • Power Supply Voltage: Single 5V±10% • Low Data Retention Voltage: 2V Min » Three state output and TTL Compatible

MCR 22-8 transistor power

Abstract: Transistor motorola 418 10146 1987 carrier A022H on 5295 equivalents HDC031 Mustang 300 HDC011 HDC016 HDC049
Contextual Info: Order this data sheet by HDC/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA HIGH PERFORMANCE TRIPLE LAYER METAL HDC SERIES CMOS ARRAYS 1.0 MICRON CMOS ARRAYS Built on a 1.0 micron, triple-layer metal CMOS process, the HDC Series represents a significant advancement in microchip technology.

CAT28LV65

Contextual Info: Preliminary CAT28LV65 64K-Bit CMOS E2PROM FEATURES • 3.0V to 3.6V Supply ■ CMOS and TTL Compatible I/O ■ Read Access Times: - 250/300/350ns ■ Automatic Page Write Operation: - 1 to 32 Bytes in 5ms - Page Load Timer ■ Low Power CMOS Dissipation: - Active: 8 mA Max.

Contextual Info: Military CMOS Programmable Gate Array Logic Cell Array M 2 0 6 4 /M 2 0 1 8 Conforms to MIL-STD-883, Class B* Ordering Information Benefits Features CMOS • Low power • TTL or CMOS Input threshold levels PROGRAMABLE • Programmable Logic unctions • Programmable I/O blocks

HV6264A

Abstract: hy6264a A12CE I0530
Contextual Info: HY6264A Series ••H Y U N D A I 8K x 8-bit CMOS SRAM DESCRIPTION The HY6264A is a high-speed, low power and 8,192 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit

KM41C4000C

Contextual Info: KM41C4000C, KM41V4000C CMOS DRAM 4M x 1 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access

KM44C4100A

Abstract: KM44C4000a KM44V4100A
Contextual Info: KM44C4000A, KM44C4100A KM44V4000A, KM44V4100A CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh

74LS382

Abstract: C1602A C350AVB 74LS08 fan-in 74ls517 74LS556 74LS183 74LS86 full adder MB64H 74LS381
Contextual Info: ix u jD U Lu ra n ctiu F U JIT S U _ mmm CWiOS Gate Array GENERAL INFORMATION The Fujitsu CMOS gate array family consists of twentyeight devlcs types which are fabricated with advanced silicon gate CMOS technology. And more than 14devlc«s are coming. Fujitsu CMOS gate array are configured In a

33AO

Abstract: C1010C a9ce DD2020
Contextual Info: KM44C1010C CMOS DRAM 1M x 4 Bit CMOS Dynamic RAM with Fast Page Mode Write Per Bit Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time(-5, -6, -7 or -8) and package type (SOJ ,

IDT7M135

Abstract: IDT7M134S IDT7M145
Contextual Info: Integrated Device Technology, Inc. 8K x 8 16K x 8 CMOS CMOS DUAL-PORT STATIC RAM MODULE MASTER FEATURES: • • • • • • • • • ■ • High-density 64K/128K CMOS Dual-Port RAM modules 16K x 8 (IDT7M135) or 8K x 8 (IDT7M134)option Fully asynchronous read/write operation from either port

Contextual Info: -P R E L IM IN A R Y October 1995 Edition 1.1 = FUJITSU PRODUCT PROFILE SHEET MB 8 116165 A- 60/-70 CMOS 1M X 16BIT HYPER PAGE M O D E DYNAMIC RAM CMOS 1,048,576 x 16BIT Hyper Page Mode Dynamic RAM The Fujitsu MB8116165A is a fully decoded CMOS Dynamic RAM DRAM that contains

Contextual Info: KM44C1005C CMOS DRAM 1 M x 4 B i t CMOS Quad CAS DRAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 4 bit Extended Data Out Quad CAS CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Access time -5, -6, -7 or -8 , power

rb414

Abstract: KM44C1003
Contextual Info: KM44C1003DT CMOS DR A M ELECTRONICS 1M x 4 Bit CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a fam ily of 1,048,576 x 4 bit Fast Page Mode Quad CAS CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time -5, -6 or -7 , power

Contextual Info: -.¿ J D S 0 5 -1 0 1 4 4 -5 E MEMORY CMOS 1 M x 4 BIT FAST PAGE MODE DRAM MB814400A-60/-70/-80 CMOS 1,048,576 x 4 bit Fast Page Mode Dynamic RAM • DESCRIPTION The Fujitsu MB814400A is a fully decoded CMOS Dynamic RAM DRAM that contains a total of 4,194,304

Contextual Info: Whaì H E W L E T T mLHM PA C K A R D High Speed CMOS Optocoupler Technical Data HCPL-7100 HCPL-7101 F eatures • CMOS IC Technology • C om patibility w ith All +5 V CMOS and TTL Logic Fam ilies • No E xternal Com ponents Required for Logic Interface

80C24

Abstract: 10MHZ 80C03 80C04 EPE6047S PT4152
Contextual Info: 80C24 80C24 Technology Incorporated AutoDUPLEXTM CMOS Ethernet Interface Adapter PRELIMINARY DATA SHEET December 10, 1996 Functional Features Note: Check for latest Data Sheet revision before starting any designs. • Low Power CMOS Technology Ethernet Serial

Contextual Info: MEMORY CMOS 4 M x 4 BIT FAST PAGE MODE DYNAMIC RAM MB8116400B-50/-60 CMOS 4,194,304 x 4 Bit Fast Page Mode Dynamic RAM • DESCRIPTION The Fujitsu MB8116400B is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 4-bit increments. The MB8116400B features a “fast page” mode of operation whereby high­

Contextual Info: 80C24 AutoDUPLEXrM CMOS Ethernet Interface Adapter Technology, Incorporated March 1994 ADVANCED DATA SHEET Functional Features General Description • Low Power CMOS Technology Ethernet Serial Interface Adapter with Integrated Manchester Code Converter MCC , AUland 10Baae-T

Contextual Info: INTERNATIONAL CMOS TECHNOLOGY, INC. Preliminary Data March 1989 TM Features Advanced CMOS EEPROM Technology High Performance, Low Power Consumption — tPD = 20ns, fmax= 37MHz — Icc = 55mA + 0.5mA/MHz EE Reprogrammability — Low risk reprogrammable inventory

PT4152

Abstract: EPE6047S 23Z435 80C25 80C26 A553-1084-01 T55 transformer
Contextual Info: Full Duplex 80C26 80C26 CMOS Ethernet Interface Adapter in 28L Package 96346 Functional Features Note: Check for latest Data Sheet revision before starting any designs. • Low Power CMOS Technology Ethernet Serial Interface Adapter with Integrated Manchester