CMOS AND GATE Search Results

430413

Abstract: 300K-600K CMOS-9 equivalent L302 sh micron aerospace
Contextual Info: CMOS-9 3.3-VOLT, 0.35-MICRON CMOS GATE ARRAYS NEC Electronics Inc. July 1997 Description Figure 1. CMOS-9 Package Examples; BGA and QFP NEC's CMOS-9 gate array family provides designers with the performance capabilities and features required to develop devices for high-speed computer and

nec d 588

Abstract: nec naming rule nec product naming rule NEC CMOS-4
Contextual Info: CMOS-9 3.3-VO LT, 0 .35-MICRON CMOS GATE ARRAYS NEC NEC Electronics Inc. Preliminary March 1995 Description Figure 1. CMOS-9 Package Examples; BGA and QFP NEC's CMOS-9 gate array family provides designers with the performance capabilities and features required

d 65632

Abstract: 65612 nec L302 CMOS Transmission gate Specifications nec cmos CMOS-5 NEC OPENCAD CMOS Block library 700-207
Contextual Info: CMOS-6/ 6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS NEC NEC Electronics Inc. February 1995 Description Figure 1. Sample CMOS-6/6A/6 V/6X Packages NEC’s CMOS-6 gate array families CMOS-6, CMOS6A, CMOS-6V and CMOS-6X are high performance, sub-micron effective channel length CMOS products

and gate cmos

Abstract: SOT-95 marking code po SOT
Contextual Info: NL17SHT08 2-Input AND Gate / CMOS Logic Level Shifter The NL17SHT08 is an advanced high speed CMOS 2−input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

MC74VHC1GT08DF2G

Contextual Info: MC74VHC1GT08 2−Input AND Gate/CMOS Logic Level Shifter The MC74VHC1GT08 is an advanced high speed CMOS 2−input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

TC74HC

Abstract: TC7S08 TC7ST08F TC7ST08
Contextual Info: TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT TC7ST08F/FU 2-Input AND Gate The TC7S08 is a high speed CMOS 2-Input AND Gate fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation.

Contextual Info: NL17SHT08 2-Input AND Gate / CMOS Logic Level Shifter The NL17SHT08 is an advanced high speed CMOS 2−input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

Contextual Info: XC74UL04AA ETR1304_002 CMOS Logic GENERAL DESCRIPTION The XC74UL04AA is a CMOS inverter, manufactured using silicon gate CMOS fabrication. CMOS low power circuit operation makes high speed LS-TTL operation achievable. The internal circuit is composed of inverter and buffer, which provide high noise immunity and stable output.

SSOT-25

Abstract: XC74UL04AAN XC74UL04AA
Contextual Info: XC74UL04AA ETR1304_002 CMOS Logic •GENERAL DESCRIPTION The XC74UL04AA is a CMOS inverter, manufactured using silicon gate CMOS fabrication. CMOS low power circuit operation makes high speed LS-TTL operation achievable. The internal circuit is composed of inverter and buffer, which provide high noise immunity and stable output.

Contextual Info: TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT TC7ST08F/FU 2-Input AND Gate The TC7S08 is a high speed CMOS 2-Input AND Gate fabricated with sil­ icon gate CMOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation.

Contextual Info: TOSHIBA TENTATIVE TC7WH08FU/FK TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7WH08FU, TC7WH08FK UNDER DEVELOPMENT DUAL 2-INPUT AND GATE The TC7WH08 is an advanced high speed CMOS 2-INPUT AND GATE fabricated with silicon gate CMOS technology.

SSOP8

Abstract: TC7WH08 TC7WH08FK TC7WH08FU
Contextual Info: TOSHIBA TC7WH08FU/FK TENTATIVE TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7WH08FU, TC7WH08FK UNDER DEVELOPMENT DUAL 2-INPUT AND GATE The TC7WH08 is an advanced high speed CMOS 2-INPUT AND GATE fabricated with silicon gate CMOS technology.

Contextual Info: IDT74ALVC08 3.3V CMOS QUADRUPLE 2-INPUT POSITIVE-AND GATE INDUSTRIAL TEMPERATURE RANGE IDT74ALVC08 3.3V CMOS QUADRUPLE 2-INPUT POSITIVE-AND GATE FEATURES: DESCRIPTION: • 0.5 MICRON CMOS Technology • ESD > 2000V per MIL-STD-883, Method 3015; > 200V using

Contextual Info: IDT74ALVC08 3.3V CMOS QUADRUPLE 2-INPUT POSITIVE-AND GATE INDUSTRIAL TEMPERATURE RANGE IDT74ALVC08 3.3V CMOS QUADRUPLE 2-INPUT POSITIVE-AND GATE FEATURES: DESCRIPTION: • 0.5 MICRON CMOS Technology • ESD > 2000V per MIL-STD-883, Method 3015; > 200V using

VHCT08AG

Abstract: vhc*t08a MC74VHCT08A MC74VHCT08ADR2 MC74VHCT08ADR2G MC74VHCT08ADTR2 MC74VHCT08ADTR2G VHCT08
Contextual Info: MC74VHCT08A Quad 2−Input AND Gate The MC74VHCT08A is an advanced high speed CMOS 2−input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

marking t132

Abstract: marking code V6 diode MC74VHC1G08 V = Device Code
Contextual Info: MC74VHC1G08 2-Input AND Gate The MC74VHC1G08 is an advanced high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

top 258 mn

Abstract: 16 pins qfn 3x3 footprint 485G NLSF308 NLSF308MNR2 QFN-16
Contextual Info: NLSF308 Quad 2- Input AND Gate The NLSF308 is an advanced high speed CMOS 2-input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

Contextual Info: MC74VHC1GT08 2-Input AND Gate/CMOS Logic Level Shifter The MC74VHC1GT08 is an advanced high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining

Contextual Info: NLSF308 Quad 2−Input AND Gate The NLSF308 is an advanced high speed CMOS 2−input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

Contextual Info: MC74VHC08 Quad 2-Input AND Gate The MC74VHC08 is an advanced high speed CMOS 2−input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

MC74VHC1G08

Contextual Info: MC74VHC1G08 2-Input AND Gate The MC74VHC1G08 is an advanced high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

Contextual Info: MC74VHCT08A Quad 2-Input AND Gate The MC74VHCT08A is an advanced high speed CMOS 2−input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

NC7SB3157

Abstract: NLASB3157 NLASB3157DFT2 sot-363 analog switch
Contextual Info: NLASB3157 2:1 Multiplexer The NLASB3157 is an advanced CMOS analog switch fabricated with silicon gate CMOS technology. It achieves very low propagation delay and RDSON resistances while maintaining CMOS low power dissipation. Analog and digital voltages that may vary

485G

Abstract: NLSF308 NLSF308MNR2 NLSF308MNR2G
Contextual Info: NLSF308 Quad 2−Input AND Gate The NLSF308 is an advanced high speed CMOS 2−input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.