430413
Abstract: 300K-600K CMOS-9 equivalent L302 sh micron aerospace
Text: CMOS-9 3.3-VOLT, 0.35-MICRON CMOS GATE ARRAYS NEC Electronics Inc. July 1997 Description Figure 1. CMOS-9 Package Examples; BGA and QFP NEC's CMOS-9 gate array family provides designers with the performance capabilities and features required to develop devices for high-speed computer and
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35-MICRON
35-micron
A12634EU1V0DS00
430413
300K-600K
CMOS-9 equivalent
L302
sh micron aerospace
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and gate cmos
Abstract: SOT-95 marking code po SOT
Text: NL17SHT08 2-Input AND Gate / CMOS Logic Level Shifter The NL17SHT08 is an advanced high speed CMOS 2−input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
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NL17SHT08
NL17SHT08/D
and gate cmos
SOT-95
marking code po SOT
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MC74VHC1GT08DF2G
Abstract: No abstract text available
Text: MC74VHC1GT08 2−Input AND Gate/CMOS Logic Level Shifter The MC74VHC1GT08 is an advanced high speed CMOS 2−input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
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MC74VHC1GT08
MC74VHC1GT08/D
MC74VHC1GT08DF2G
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TC74HC
Abstract: TC7S08 TC7ST08F TC7ST08
Text: TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT TC7ST08F/FU 2-Input AND Gate The TC7S08 is a high speed CMOS 2-Input AND Gate fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation.
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TC7ST08F/FU
TC7S08
TC74HC
TC7ST08F
TC7ST08
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Untitled
Abstract: No abstract text available
Text: NL17SHT08 2-Input AND Gate / CMOS Logic Level Shifter The NL17SHT08 is an advanced high speed CMOS 2−input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
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NL17SHT08
NL17SHT08
NL17SHT08/D
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Untitled
Abstract: No abstract text available
Text: XC74UL04AA ETR1304_002 CMOS Logic GENERAL DESCRIPTION The XC74UL04AA is a CMOS inverter, manufactured using silicon gate CMOS fabrication. CMOS low power circuit operation makes high speed LS-TTL operation achievable. The internal circuit is composed of inverter and buffer, which provide high noise immunity and stable output.
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XC74UL04AA
ETR1304
XC74UL04AA
SSOT-25
SSOT-25,
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SSOT-25
Abstract: XC74UL04AAN XC74UL04AA
Text: XC74UL04AA ETR1304_002 CMOS Logic •GENERAL DESCRIPTION The XC74UL04AA is a CMOS inverter, manufactured using silicon gate CMOS fabrication. CMOS low power circuit operation makes high speed LS-TTL operation achievable. The internal circuit is composed of inverter and buffer, which provide high noise immunity and stable output.
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XC74UL04AA
ETR1304
XC74UL04AA
SSOT-25
XC74UL04AAN
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Untitled
Abstract: No abstract text available
Text: IDT74ALVC08 3.3V CMOS QUADRUPLE 2-INPUT POSITIVE-AND GATE INDUSTRIAL TEMPERATURE RANGE IDT74ALVC08 3.3V CMOS QUADRUPLE 2-INPUT POSITIVE-AND GATE FEATURES: DESCRIPTION: • 0.5 MICRON CMOS Technology • ESD > 2000V per MIL-STD-883, Method 3015; > 200V using
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IDT74ALVC08
IDT74ALVC08
MIL-STD-883,
200pF,
ALVC08
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Untitled
Abstract: No abstract text available
Text: IDT74ALVC08 3.3V CMOS QUADRUPLE 2-INPUT POSITIVE-AND GATE INDUSTRIAL TEMPERATURE RANGE IDT74ALVC08 3.3V CMOS QUADRUPLE 2-INPUT POSITIVE-AND GATE FEATURES: DESCRIPTION: • 0.5 MICRON CMOS Technology • ESD > 2000V per MIL-STD-883, Method 3015; > 200V using
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IDT74ALVC08
MIL-STD-883,
200pF,
ALVC08
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VHC08G
Abstract: 74VHC08 MC74VHC08 MC74VHC08DR2 MC74VHC08DR2G MC74VHC08DTR2 MC74VHC08DTR2G MC74VHC08MEL VHC08
Text: MC74VHC08 Quad 2−Input AND Gate The MC74VHC08 is an advanced high speed CMOS 2−input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
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MC74VHC08
MC74VHC08
MC74VHC08/D
VHC08G
74VHC08
MC74VHC08DR2
MC74VHC08DR2G
MC74VHC08DTR2
MC74VHC08DTR2G
MC74VHC08MEL
VHC08
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VHCT08AG
Abstract: vhc*t08a MC74VHCT08A MC74VHCT08ADR2 MC74VHCT08ADR2G MC74VHCT08ADTR2 MC74VHCT08ADTR2G VHCT08
Text: MC74VHCT08A Quad 2−Input AND Gate The MC74VHCT08A is an advanced high speed CMOS 2−input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
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MC74VHCT08A
MC74VHCT08A
VHCT08A
MC74VHCT08A/D
VHCT08AG
vhc*t08a
MC74VHCT08ADR2
MC74VHCT08ADR2G
MC74VHCT08ADTR2
MC74VHCT08ADTR2G
VHCT08
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marking t132
Abstract: marking code V6 diode MC74VHC1G08 V = Device Code
Text: MC74VHC1G08 2-Input AND Gate The MC74VHC1G08 is an advanced high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
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MC74VHC1G08
353/SC
marking t132
marking code V6 diode
V = Device Code
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top 258 mn
Abstract: 16 pins qfn 3x3 footprint 485G NLSF308 NLSF308MNR2 QFN-16
Text: NLSF308 Quad 2- Input AND Gate The NLSF308 is an advanced high speed CMOS 2-input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
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NLSF308
NLSF308
NLSF308/D
top 258 mn
16 pins qfn 3x3 footprint
485G
NLSF308MNR2
QFN-16
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Untitled
Abstract: No abstract text available
Text: MC74VHC1GT08 2-Input AND Gate/CMOS Logic Level Shifter The MC74VHC1GT08 is an advanced high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining
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MC74VHC1GT08
r14525
MC74VHC1GT08/D
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Untitled
Abstract: No abstract text available
Text: MC74VHC08 Quad 2-Input AND Gate The MC74VHC08 is an advanced high speed CMOS 2−input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
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MC74VHC08
MC74VHC08
MC74VHC08/D
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MC74VHC1G08
Abstract: No abstract text available
Text: MC74VHC1G08 2-Input AND Gate The MC74VHC1G08 is an advanced high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
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MC74VHC1G08
MC74VHC1G08
353/SCâ
r14525
MC74VHC1G08/D
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Untitled
Abstract: No abstract text available
Text: MC74VHCT08A Quad 2-Input AND Gate The MC74VHCT08A is an advanced high speed CMOS 2−input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
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MC74VHCT08A
MC74VHCT08A
VHCT08A
MC74VHCT08A/D
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NC7SB3157
Abstract: NLASB3157 NLASB3157DFT2 sot-363 analog switch
Text: NLASB3157 2:1 Multiplexer The NLASB3157 is an advanced CMOS analog switch fabricated with silicon gate CMOS technology. It achieves very low propagation delay and RDSON resistances while maintaining CMOS low power dissipation. Analog and digital voltages that may vary
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NLASB3157
NLASB3157
NC7SB3157.
r14525
NLASB3157/D
NC7SB3157
NLASB3157DFT2
sot-363 analog switch
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485G
Abstract: NLSF308 NLSF308MNR2 NLSF308MNR2G
Text: NLSF308 Quad 2−Input AND Gate The NLSF308 is an advanced high speed CMOS 2−input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
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NLSF308
NLSF308
NLSF308/D
485G
NLSF308MNR2
NLSF308MNR2G
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nec d 588
Abstract: nec naming rule nec product naming rule NEC CMOS-4
Text: CMOS-9 3.3-VO LT, 0 .35-MICRON CMOS GATE ARRAYS NEC NEC Electronics Inc. Preliminary March 1995 Description Figure 1. CMOS-9 Package Examples; BGA and QFP NEC's CMOS-9 gate array family provides designers with the performance capabilities and features required
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35-MICRON
66MHz
nec d 588
nec naming rule
nec product naming rule
NEC CMOS-4
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d 65632
Abstract: 65612 nec L302 CMOS Transmission gate Specifications nec cmos CMOS-5 NEC OPENCAD CMOS Block library 700-207
Text: CMOS-6/ 6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS NEC NEC Electronics Inc. February 1995 Description Figure 1. Sample CMOS-6/6A/6 V/6X Packages NEC’s CMOS-6 gate array families CMOS-6, CMOS6A, CMOS-6V and CMOS-6X are high performance, sub-micron effective channel length CMOS products
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Untitled
Abstract: No abstract text available
Text: TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT TC7ST08F/FU 2-Input AND Gate The TC7S08 is a high speed CMOS 2-Input AND Gate fabricated with sil icon gate CMOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation.
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TC7S08
TC74HC
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TC7WH08FU/FK TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7WH08FU, TC7WH08FK UNDER DEVELOPMENT DUAL 2-INPUT AND GATE The TC7WH08 is an advanced high speed CMOS 2-INPUT AND GATE fabricated with silicon gate CMOS technology.
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TC7WH08FU/FK
TC7WH08FU,
TC7WH08FK
TC7WH08
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SSOP8
Abstract: TC7WH08 TC7WH08FK TC7WH08FU
Text: TOSHIBA TC7WH08FU/FK TENTATIVE TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7WH08FU, TC7WH08FK UNDER DEVELOPMENT DUAL 2-INPUT AND GATE The TC7WH08 is an advanced high speed CMOS 2-INPUT AND GATE fabricated with silicon gate CMOS technology.
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TC7WH08FU/FK
TC7WH08FU,
TC7WH08FK
TC7WH08
SSOP8
TC7WH08FK
TC7WH08FU
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