PD45128163
Abstract: uPD45128163G5-A75-9JF-E
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD45128163-E 128M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD45128163 is high-speed 134,217,728-bit synchronous dynamic random-access memory, organized as 2,097,152 x 16 × 4 word × bit × bank . The synchronous DRAM achieved high-speed data transfer using the pipeline architecture.
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PD45128163-E
128M-bit
PD45128163
728-bit
54-pin
M01E0107
uPD45128163G5-A75-9JF-E
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DDR2-400
Abstract: DDR2-533 DDR2-667 EBE20RE4ABFA EBE20RE4ABFA-4A-E EBE20RE4ABFA-5C-E EBE20RE4ABFA-6E-E CS 3820
Text: PRELIMINARY DATA SHEET 2GB Registered DDR2 SDRAM DIMM EBE20RE4ABFA 256M words x 72 bits, 1 Rank Specifications Features • Density: 2GB • Organization 256M words × 72 bits, 1 rank • Mounting 18 pieces of 1G bits DDR2 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory
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EBE20RE4ABFA
240-pin
667Mbps/533Mbps/400Mbps
cycles/64ms
M01E0107
E0873E30
DDR2-400
DDR2-533
DDR2-667
EBE20RE4ABFA
EBE20RE4ABFA-4A-E
EBE20RE4ABFA-5C-E
EBE20RE4ABFA-6E-E
CS 3820
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EBD52UD6ADSA-6B
Abstract: DDR266A DDR266B DDR333B EBD52UD6ADSA EBD52UD6ADSA-7A EBD52UD6ADSA-7B EDD5116ADTA-6B
Text: DATA SHEET 512MB DDR SDRAM SO-DIMM EBD52UD6ADSA 64M words x 64 bits, 2 Ranks Description Features The EBD52UD6ADSA is 64M words × 64 bits, 2 ranks Double Data Rate (DDR) SDRAM Small Outline Dual In-line Memory Module, mounting 8 pieces of 512M bits DDR SDRAM sealed in TSOP package. Read and
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512MB
EBD52UD6ADSA
EBD52UD6ADSA
M01E0107
E0425E30
EBD52UD6ADSA-6B
DDR266A
DDR266B
DDR333B
EBD52UD6ADSA-7A
EBD52UD6ADSA-7B
EDD5116ADTA-6B
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EBE10AD4AGFA-6E-E
Abstract: DDR2-400 DDR2-533 DDR2-667 EBE10AD4AGFA EBE10AD4AGFA-4A-E EBE10AD4AGFA-5C-E E0865E11
Text: PRELIMINARY DATA SHEET 1GB Registered DDR2 SDRAM DIMM EBE10AD4AGFA 128M words x 72 bits, 1 Rank Specifications Features • Density: 1GB • Organization 128M words × 72 bits, 1 rank • Mounting 18 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory
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EBE10AD4AGFA
240-pin
667Mbps/533Mbps/400Mbps
cycles/64ms
M01E0107
E0865E11
EBE10AD4AGFA-6E-E
DDR2-400
DDR2-533
DDR2-667
EBE10AD4AGFA
EBE10AD4AGFA-4A-E
EBE10AD4AGFA-5C-E
E0865E11
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DDR266A
Abstract: DDR266B DDR333B EBD52UC8AKDA EBD52UC8AKDA-6B EBD52UC8AKDA-7A EBD52UC8AKDA-7B
Text: PRELIMINARY DATA SHEET 512MB DDR SDRAM SO DIMM EBD52UC8AKDA 64M words x 64 bits, 2 Ranks Description Features The EBD52UC8AKDA is 64M words × 64 bits, 2 ranks Double Data Rate (DDR) SDRAM Small Outline Dual In-line Memory Module, mounting 16 pieces of 256M
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512MB
EBD52UC8AKDA
EBD52UC8AKDA
M01E0107
E0367E20
DDR266A
DDR266B
DDR333B
EBD52UC8AKDA-6B
EBD52UC8AKDA-7A
EBD52UC8AKDA-7B
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EDD2516AETA-5B-E
Abstract: DDR333 DDR400 EDD2516AETA EDD2516AETA-5C-E EDD2516AETA-6B-E EDD2516AETA-7A-E
Text: PRELIMINARY DATA SHEET 256M bits DDR SDRAM EDD2516AETA 16M words x 16 bits Specifications Features • Density: 256M bits • Organization 4M words × 16 bits × 4 banks • Package: 66-pin plastic TSOP (II) Lead-free (RoHS compliant) • Power supply:
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EDD2516AETA
66-pin
DDR400:
DDR333,
400Mbps/333Mbps/266Mbps
cycles/64ms
M01E0107
E0859E20
EDD2516AETA-5B-E
DDR333
DDR400
EDD2516AETA
EDD2516AETA-5C-E
EDD2516AETA-6B-E
EDD2516AETA-7A-E
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E014
Abstract: upd4564163g5a10b
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD4564441, 4564841, 4564163 64M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 × 4, 2,097,152 × 8 × 4, 1,048,576 ×16 × 4 word × bit × bank , respectively.
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PD4564441,
64M-bit
864-bit
54-pin
M01E0107
E014
upd4564163g5a10b
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MC-4R64FKE8S
Abstract: PD488588 PD488588FF
Text: DATA SHEET Direct Rambus DRAM SO-RIMMTM Module MC-4R64FKE8S 32M words x 18 bits Description Features The Direct Rambus SO-RIMM module is a generalpurpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, mobile personal
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MC-4R64FKE8S
M01E0107
E0140N30
MC-4R64FKE8S
PD488588
PD488588FF
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Direct-Rambus-RIMM
Abstract: MC-4R128FKE6D PD488588 PD488588FF
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4R128FKE6D Direct Rambus DRAM RIMMTM Module 128M-BYTE 64M-WORD x 16-BIT Description The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other
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MC-4R128FKE6D
128M-BYTE
64M-WORD
16-BIT)
MC-4R128FKE6D
PD488588)
600MHz,
711MHz
800MHz
M01E0107
Direct-Rambus-RIMM
PD488588
PD488588FF
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96-ball FBGA
Abstract: No abstract text available
Text: COVER PRELIMINARY DATA SHEET 1G bits DDR3L SDRAM EDJ1108EJBG 128M words x 8 bits EDJ1116EJBG (64M words × 16 bits) Specifications Features • Density: 1G bits • Organization — 16M words × 8 bits × 8 banks (EDJ1108EJBG) — 8M words × 16 bits × 8 banks (EDJ1116EJBG)
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EDJ1108EJBG
EDJ1116EJBG
EDJ1108EJBG)
EDJ1116EJBG)
78-ball
96-ball
1866Mbps/1600Mbps/1333Mbps
96-ball FBGA
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DDR2-400
Abstract: DDR2-533 EBE25RC8AAFA-4C-E EBE25RC8AAFA-5C-E
Text: PRELIMINARY DATA SHEET 256MB Registered DDR2 SDRAM DIMM EBE25RC8AAFA 32M words x 72 bits, 1 Rank Description Features The EBE25RC8AAFA is a 32M words × 72 bits, 1 rank DDR2 SDRAM Module, mounting 9 pieces of DDR2 SDRAM sealed in FBGA (µBGA) package. Read and
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256MB
EBE25RC8AAFA
EBE25RC8AAFA
M01E0107
E0470E10
DDR2-400
DDR2-533
EBE25RC8AAFA-4C-E
EBE25RC8AAFA-5C-E
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DDR2-533
Abstract: EBE10RD4ABFA-4A-E EBE10RD4ABFA-4C-E EBE10RD4ABFA-5C-E DDR2-400
Text: PRELIMINARY DATA SHEET 1GB Registered DDR2 SDRAM DIMM EBE10RD4ABFA 128M words x 72 bits, 1 Rank Description Features The EBE10RD4ABFA is a 128M words × 72 bits, 1 rank DDR2 SDRAM Module, mounting 18 pieces of DDR2 SDRAM sealed in FBGA (µBGA) package.
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EBE10RD4ABFA
EBE10RD4ABFA
M01E0107
E0366E60
DDR2-533
EBE10RD4ABFA-4A-E
EBE10RD4ABFA-4C-E
EBE10RD4ABFA-5C-E
DDR2-400
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DDR266A
Abstract: DDR266B DDR333B EBD11UD8ADDA-6B EBD11UD8ADDA-7A EBD11UD8ADDA-7B E043-1
Text: DATA SHEET 1GB DDR SDRAM SO-DIMM EBD11UD8ADDA 128M words x 64 bits, 2 Ranks Description Features The EBD11UD8ADDA is 128M words × 64 bits, 2 ranks Double Data Rate (DDR) SDRAM Small Outline Dual In-line Memory Module, mounting 16 pieces of 512M bits DDR SDRAM sealed in TCP package. Read
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EBD11UD8ADDA
EBD11UD8ADDA
M01E0107
E0431E20
DDR266A
DDR266B
DDR333B
EBD11UD8ADDA-6B
EBD11UD8ADDA-7A
EBD11UD8ADDA-7B
E043-1
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EDS1616AGTA
Abstract: EDS1616AGTA-6B-E EDS1616AGTA-75-E
Text: DATA SHEET 16M bits SDRAM EDS1616AGTA 1M words x 16 bits Description Pin Configurations The EDS1616AGTA is 16M bits SDRAM organized as 524,288 words × 16 bits × 2 banks. All inputs and outputs are synchronized with the positive edge of the clock. It is packaged in 50-pin plastic TSOP (II).
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EDS1616AGTA
EDS1616AGTA
50-pin
166MHz/133MHz
M01E0107
E0504E30
EDS1616AGTA-6B-E
EDS1616AGTA-75-E
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EBR25UC8ABFD-8C
Abstract: EBR25UC8ABFD-AD EBR25UC8ABFD-AE EBR25UC8ABFD-AEP EDR2518ABSE EBR25UC8ABFD
Text: DATA SHEET 256MB Direct Rambus DRAM RIMM Module EBR25UC8ABFD 128M words x 16 bits Description Features The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including
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256MB
EBR25UC8ABFD
1066MHz/800MHz
925mm
M01E0107
E0317E20
EBR25UC8ABFD-8C
EBR25UC8ABFD-AD
EBR25UC8ABFD-AE
EBR25UC8ABFD-AEP
EDR2518ABSE
EBR25UC8ABFD
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DDR400B
Abstract: EBD11UD8ADFB-5B EBD11UD8ADFB-5C elpida DLL circuit
Text: DATA SHEET 1GB Unbuffered DDR SDRAM DIMM EBD11UD8ADFB-5 128M words x 64 bits, 2 Ranks Description Features The EBD11UD8ADFB is 128M words × 64 bits, 2 ranks Double Data Rate (DDR) SDRAM unbuffered module, mounting 16 pieces of 512M bits DDR SDRAM sealed
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EBD11UD8ADFB-5
EBD11UD8ADFB
M01E0107
E0403E30
DDR400B
EBD11UD8ADFB-5B
EBD11UD8ADFB-5C
elpida DLL circuit
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DDR2-533
Abstract: EBE20RE4AAFA-4A-E EBE20RE4AAFA-5C-E DDR2-400
Text: PRELIMINARY DATA SHEET 2GB Registered DDR2 SDRAM DIMM EBE20RE4AAFA 256M words x 72 bits, 1 Rank Description Features The EBE20RE4AAFA is a 256M words × 72 bits, 1 rank DDR2 SDRAM Module, mounting 18 pieces of DDR2 SDRAM sealed in FBGA (µBGA) package.
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EBE20RE4AAFA
EBE20RE4AAFA
M01E0107
E0440E20
DDR2-533
EBE20RE4AAFA-4A-E
EBE20RE4AAFA-5C-E
DDR2-400
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EDE1104AASE
Abstract: EDE1104AASE-4A-E EDE1104AASE-5C-E EDE1104AASE-6C-E EDE1108AASE
Text: PRELIMINARY DATA SHEET 1G bits DDR2 SDRAM EDE1104AASE 256M words x 4 bits EDE1108AASE (128M words × 8 bits) Description Features The EDE1104AA is a 1G bits DDR2 SDRAM organized as 33,554,432 words × 4 bits × 8 banks. The EDE1108AA is a 1G bits DDR2 SDRAM organized
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EDE1104AASE
EDE1108AASE
EDE1104AA
EDE1108AA
68-ball
M01E0107
E0404E10
EDE1104AASE
EDE1104AASE-4A-E
EDE1104AASE-5C-E
EDE1104AASE-6C-E
EDE1108AASE
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DDR2-400
Abstract: DDR2-533 EBE51UD8ABFA EBE51UD8ABFA-4A EDE5108ABSE
Text: PRELIMINARY DATA SHEET 512MB Unbuffered DDR2 SDRAM DIMM EBE51UD8ABFA 64M words x 64 bits, 1 Rank Description Features The EBE51UD8ABFA is 64M words × 64 bits, 1 rank DDR2 SDRAM unbuffered module, mounting 8 pieces of 512M bits DDR2 SDRAM sealed in FBGA (µBGA)
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512MB
EBE51UD8ABFA
EBE51UD8ABFA
M01E0107
E0357E10
DDR2-400
DDR2-533
EBE51UD8ABFA-4A
EDE5108ABSE
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DDR2-400
Abstract: DDR2-533 EBE11ED8AEFA-4A-E EBE11ED8AEFA-5C-E
Text: PRELIMINARY DATA SHEET 1GB Unbuffered DDR2 SDRAM DIMM EBE11ED8AEFA 128M words x 72 bits, 2 Ranks Description Features The EBE11ED8AEFA is 128M words × 72 bits, 2 ranks DDR2 SDRAM unbuffered module, mounting 18 pieces of 512M bits DDR2 SDRAM sealed in FBGA (µBGA)
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EBE11ED8AEFA
EBE11ED8AEFA
M01E0107
E0587E10
DDR2-400
DDR2-533
EBE11ED8AEFA-4A-E
EBE11ED8AEFA-5C-E
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DDR400B
Abstract: EBD52UC8AKFA-5B-E EBD52UC8AKFA-5C-E EBD52UC8AKFA-5-E EDD2508AKTA-5B-E
Text: PRELIMINARY DATA SHEET 512MB Unbuffered DDR SDRAM DIMM EBD52UC8AKFA-5-E 64M words x 64 bits, 2 Ranks Description Features The EBD52UC8AKFA is 64M words × 64 bits, 2 ranks Double Data Rate (DDR) SDRAM unbuffered module, mounting 16 pieces of 256M bits DDR SDRAM sealed
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512MB
EBD52UC8AKFA-5-E
EBD52UC8AKFA
M01E0107
E0601E10
DDR400B
EBD52UC8AKFA-5B-E
EBD52UC8AKFA-5C-E
EBD52UC8AKFA-5-E
EDD2508AKTA-5B-E
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4R128FKE8D Direct Rambus DRAM RIMMTM Module 128M-BYTE 64M-WORD x 18-BIT Description The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other
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MC-4R128FKE8D
128M-BYTE
64M-WORD
18-BIT)
MC-4R128FKE8D
PD488588)
600MHz,
711MHz
800MHz
M01E0107
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 512M bits DDR SDRAM EDD5104AB 128M words x 4 bits EDD5108AB (64M words × 8 bits) Description Pin Configurations The EDD5104AB is a 512M bits Double Data Rate (DDR) SDRAM organized as 33,554,432 words × 4 bits × 4 banks. The EDD5108AB is a 512M bits DDR
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EDD5104AB
EDD5108AB
EDD5104AB
EDD5108AB
M01E0107
E0237E10
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 512MB 32-bit Direct Rambus DRAM RIMM Module MC-4R512FKK8K 128M words x 18 bits × 2 channels Description Features The 32-bit Direct Rambus RIMM module is a generalpurpose high-performance lines of memory modules suitable for use in a broad range of applications
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512MB
32-bit
MC-4R512FKK8K
800MHz
925mm
M01E0107
E0254N10
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