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    CLY 30 Price and Stock

    Chromeled Corp CLY30B2T

    LED BLUE DIFFUSED T-1 T/H
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    DigiKey CLY30B2T Bulk 1,000
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    Chromeled Corp CLY30GT2T

    LED GREEN DIFFUSED T-1 T/H
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    DigiKey CLY30GT2T Bulk 1
    • 1 $0.25
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    ABLIC Inc. S-80830CLY-B2-U

    Supervisory Circuits 3.0V 0.8uA CMOS Out
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    Mouser Electronics S-80830CLY-B2-U 668
    • 1 $0.92
    • 10 $0.561
    • 100 $0.397
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    LEMO connectors FVN.1S.304.CLYC37Z

    Circular Push Pull Connectors STRAIGHT PLUG W CABLE COLLET
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    Mouser Electronics FVN.1S.304.CLYC37Z 37
    • 1 $104.11
    • 10 $97.98
    • 100 $88.79
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    LEMO connectors EVP.1S.304.CLY

    Circular Push Pull Connectors RECPT W.NUT 4 CTS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics EVP.1S.304.CLY
    • 1 $78.85
    • 10 $74.2
    • 100 $63.54
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    CLY 30 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Q62702-L96

    Abstract: No abstract text available
    Text: CLY 2 GaAs FET Datasheet 4 * Power amplifier for mobile phones * For frequencies up to 3 GHz * Operating voltage range: 2 to 6 V * POUT at VD=3V, f=1.8GHz typ. 23.5 dBm * High efficiency better 55 % 5 6 3 2 ESD: Type CLY 2 Electrostatic discharge sensitive device,


    Original     		PDF Q62702-L96 Q62702-L96

    gaas fet marking a

    Abstract: cly 2 GaAs FET marking code 5 Q62702-L96 SIEMENS MAG 6000 siemens gaas fet
    Text: CLY 2 GaAs FET Datasheet 4 * Power amplifier for mobile phones * For frequencies up to 3 GHz * Operating voltage range: 2 to 6 V * POUT at VD=3V, f=1.8GHz typ. 23.5 dBm


    Original     		PDF Q62702-L96 gaas fet marking a cly 2 GaAs FET marking code 5 Q62702-L96 SIEMENS MAG 6000 siemens gaas fet

    CLY10

    Abstract: gaas fet marking a CLY 10 04917 07096 FET marking code marking code 5 small signal GaAs FET Q62702-L94 siemens gaas fet
    Text: CLY 10 GaAs FET Datasheet * Power amplifier for mobile phones * For frequencies from 400 MHz to 2.5 GHz * Wide operating voltage range: 2.7 to 6 V * POUT at VD=3V, f=1.8GHz 28.5 dBm typ.


    Original     		PDF Q62702-L94 CLY10 CLY10 gaas fet marking a CLY 10 04917 07096 FET marking code marking code 5 small signal GaAs FET Q62702-L94 siemens gaas fet

    siemens 30 090

    Abstract: Siemens A 1458 gaas fet marking a Q62702-L99 440 485 hl 1606
    Text: CLY 15 GaAs FET Datasheet * Power amplifier for mobile phones * For frequencies from 400 MHz to 2.5 GHz * Operating voltage range: 2.7 to 6 V * POUT at VD=3V, f=1.8 GHz typ. 31.5 dBm


    Original     		PDF Q62702-L99 siemens 30 090 Siemens A 1458 gaas fet marking a Q62702-L99 440 485 hl 1606

    gaas fet marking a

    Abstract: siemens gaas fet FET marking code Q62702-L90 cly5 cly 10 pd21
    Text: CLY 5 GaAs FET Datasheet * Power amplifier for mobile phones * For frequencies from 400 MHz to 2.5 GHz * Wide operating voltage range: 2.7 to 6 V * POUT at VD=3V, f=1.8GHz typ. 26.5 dBm


    Original     		PDF Q62702-L90 615ms gaas fet marking a siemens gaas fet FET marking code Q62702-L90 cly5 cly 10 pd21

    Q62702-L94

    Abstract: No abstract text available
    Text: CLY 10 GaAs FET Datasheet * Power amplifier for mobile phones * For frequencies from 400 MHz to 2.5 GHz * Wide operating voltage range: 2.7 to 6 V * POUT at VD=3V, f=1.8GHz 28.5 dBm typ.


    Original     		PDF Q62702-L94 Q62702-L94

    Q62702-L90

    Abstract: marking K gaas fet gaas fet marking a gaas fet marking C
    Text: CLY 5 GaAs FET Datasheet * Power amplifier for mobile phones * For frequencies from 400 MHz to 2.5 GHz * Wide operating voltage range: 2.7 to 6 V * POUT at VD=3V, f=1.8GHz typ. 26.5 dBm * High efficiency better 55 % ESD: Electrostatic discharge sensitive device,


    Original     		PDF Q62702-L90 Q62702-L90 marking K gaas fet gaas fet marking a gaas fet marking C

    cly 10

    Abstract: Q62702-L94 CLY 70 GPS05560 SMD MARKING CODE TRANSISTOR 501
    Text: GaAs FET CLY 10 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Wide operating voltage range: 2.7 to 6 V VD = 3 V, f = 1.8 GHz, POUT = 28.5 dBm typ. High efficiency better 55% ESD: Electrostatic discharge sensitive device,


    Original     		PDF Q62702-L94 OT-223 P-SOT223-4-2 GPS05560 cly 10 Q62702-L94 CLY 70 GPS05560 SMD MARKING CODE TRANSISTOR 501

    WL431003667

    Abstract: TRANSISTOR SMD MARKING CODE 703 TRANSISTOR SMD MARKING CODE 723 smd transistor marking p1 TRANSISTOR SMD MARKING CODE 512
    Text: GaAs FET CLY 10 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Wide operating voltage range: 2.7 to 6 V VD = 3 V, f = 1.8 GHz, POUT = 28.5 dBm typ. High efficiency better 55% ESD: Electrostatic discharge sensitive device,


    Original     		PDF OT-223 Q62702-L94 P-SOT223-4-2 GPS05560 WL431003667 TRANSISTOR SMD MARKING CODE 703 TRANSISTOR SMD MARKING CODE 723 smd transistor marking p1 TRANSISTOR SMD MARKING CODE 512

    TRANSISTOR SMD MARKING CODE 703

    Abstract: TRANSISTOR SMD MARKING CODE 723 GPS05560 Q62702-L94 smd transistor marking 329 book SMD MARKING CODE TRANSISTOR 501
    Text: GaAs FET CLY 10 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Wide operating voltage range: 2.7 to 6 V VD = 3 V, f = 1.8 GHz, POUT = 28.5 dBm typ. High efficiency better 55% ESD: Electrostatic discharge sensitive device,


    Original     		PDF Q62702-L94 OT-223 P-SOT223-4-2 GPS05560 TRANSISTOR SMD MARKING CODE 703 TRANSISTOR SMD MARKING CODE 723 GPS05560 Q62702-L94 smd transistor marking 329 book SMD MARKING CODE TRANSISTOR 501

    Q62702-L96

    Abstract: No abstract text available
    Text: GaAs FET CLY 2 Data Sheet • • • • • Power amplifier for mobile phones For frequencies up to 3 GHz Operating voltage range: 2 to 6 V POUT at VD = 3 V, f = 1.8 GHz typ. 23.5 dBm High efficiency better 55% MW-6 ESD: Electrostatic discharge sensitive device,


    Original     		PDF Q62702-L96 GPW05794 Q62702-L96

    CLY 2

    Abstract: Q62702-L96
    Text: GaAs FET CLY 2 Data Sheet • • • • • Power amplifier for mobile phones For frequencies up to 3 GHz Operating voltage range: 2 to 6 V POUT at VD = 3 V, f = 1.8 GHz typ. 23.5 dBm High efficiency better 55% MW-6 ESD: Electrostatic discharge sensitive device,


    Original     		PDF Q62702-L96 GPW05794 CLY 2 Q62702-L96

    RN-134 RN-134

    Abstract: No abstract text available
    Text: GaAs FET CLY 2 Data Sheet • • • • • Power amplifier for mobile phones For frequencies up to 3 GHz Operating voltage range: 2 to 6 V POUT at VD = 3 V, f = 1.8 GHz typ. 23.5 dBm High efficiency better 55% MW-6 ESD: Electrostatic discharge sensitive device,


    Original     		PDF Q62702-L96 GPW05794 RN-134 RN-134

    transistor smd 661 752

    Abstract: GPS05560 Q62702-L90 high power FET transistor s-parameters TRANSISTOR SMD MARKING CODE p1 smd transistor code 621 marking code 933 SMD Transistor SMD transistor marking P
    Text: GaAs FET CLY 5 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Wide operating voltage range: 2.7 to 6 V POUT at VD = 3 V, f = 1.8 GHz typ. 26.5 dBm High efficiency better 55% ESD: Electrostatic discharge sensitive device,


    Original     		PDF OT-223 Q62702-L90 P-SOT223-4-2 EHT08956 GPS05560 transistor smd 661 752 GPS05560 Q62702-L90 high power FET transistor s-parameters TRANSISTOR SMD MARKING CODE p1 smd transistor code 621 marking code 933 SMD Transistor SMD transistor marking P

    marking code 933 SMD Transistor

    Abstract: transistor smd 661 752 CLY5 high power FET transistor s-parameters
    Text: GaAs FET CLY 5 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Wide operating voltage range: 2.7 to 6 V POUT at VD = 3 V, f = 1.8 GHz typ. 26.5 dBm High efficiency better 55% ESD: Electrostatic discharge sensitive device,


    Original     		PDF OT-223 Q62702-L90 P-SOT223-4-2 EHT08956 GPS05560 marking code 933 SMD Transistor transistor smd 661 752 CLY5 high power FET transistor s-parameters

    2520P

    Abstract: schottky diode 43t BFY193 5613 CFY 19 CFY 18 micro-x 420
    Text: GaAs Components HiRel Discretes and Microwave Semiconductors 11.4.1 Table 2 HiRel Silicon Diodes General Purpose Silicon Schottky Diodes Tj,max = 150 °C Max. Ratings Component type variant BAS 40-T1 VR IF Characteristics VBR VF Package RF CD Detail Spec. Type Variant


    Original     		PDF 40-T1 70-T1 70B-HP HPAC140 2520P schottky diode 43t BFY193 5613 CFY 19 CFY 18 micro-x 420

    Q68000-A8370

    Abstract: CGY MW
    Text: GaAs Components Alphanumeric Type Index 12 Alphanumeric Type Index GaAs RF-Transistors, MMICs and Modules Type Marking Ordering Code Package Page BGV 503 BGV 503 Q62702-L0132 P-TSSOP-10-1 170 BGV 903 BGV 903 Q62702-L0131 P-TSSOP-10-1 170 CF 739 MSs Q62702-F1215


    Original     		PDF 1900C Q62702-L0132 Q62702-L0131 Q62702-F1215 Q62702-F1391 Q62705-K0603 Q62705-K0604 Q62702-G0116 Q62703-F97 Q68000-A8370 CGY MW

    Untitled

    Abstract: No abstract text available
    Text: 10-Bit, 6-Channel Decimating LCD DecDriver with Level Shifters AD8384 PRODUCT FEATURES High accuracy, high resolution voltage outputs 10-bit input resolution Laser trimmed outputs Fast settling, high voltage drive 30 ns settling time to 0.25% into a 150 pF load


    Original     		PDF 10-Bit, AD8384 10-bit AD8384 80-lead AD8384ASVZ11 SV-80

    HTPS panel

    Abstract: AD8132 AD8384 AD8384ASVZ11 AD8389 SD10 SV-80
    Text: 10-Bit, 6-Channel Decimating LCD DecDriver with Level Shifters AD8384 PRODUCT FEATURES High accuracy, high resolution voltage outputs 10-bit input resolution Laser trimmed outputs Fast settling, high voltage drive 30 ns settling time to 0.25% into a 150 pF load


    Original     		PDF 10-Bit, AD8384 10-bit AD8384 80-lead AD8384ASVZ11 SV-80 HTPS panel AD8132 AD8384ASVZ11 AD8389 SD10 SV-80

    siemens gaas fet

    Abstract: TMS 1600 marking S221
    Text: SIEMENS GaAs FET CLY 2 Datasheet * Power amplifier for mobile phones * For frequencies up to 3 GHz * Operating voltage range: 2 to 6 V * P at V0=3V, f=1.8GHz typ. 23.5 dBm * High efficiency better 55 % out ESD: Type CLY 2 Electrostatic discharge sensitive device,


    OCR Scan     		PDF Q62702-L96 siemens gaas fet TMS 1600 marking S221

    Untitled

    Abstract: No abstract text available
    Text: In fineon »«ihn cicjiss GaAs FET CLY 2 Data Sheet • Power amplifier for mobile phones • • • • For frequencies up to 3 GHz Operating voltage range: 2 to 6 V POUT at VD= 3 V , / = 1.8 GHz typ. 23.5 dBm High efficiency better 55% ESD: Electrostatic discharge sensitive device,


    OCR Scan     		PDF Q62702-L96 EHT08944

    Untitled

    Abstract: No abstract text available
    Text: Infineon ?achnc!ugies GaAs FET CLY 5 Data Sheet • Power amplifier for mobile phones • For frequencies from 400 MHz to 2.5 GHz • Wide operating voltage range: 2.7 to 6 V • POUJ at VD = 3 V , / = 1.8 GHz typ. 26.5 dBm • High efficiency better 55% ESD: Etectrostatic discharge sensitive device,


    OCR Scan     		PDF Q62702-L90 P-SOT223-4-2 EHT08952

    siemens gaas fet

    Abstract: gaas fet marking J
    Text: SIEMENS CLY 5 GaAs FET D a t a s h e e t * Pow er amplifier for mobile phones * For frequencies from 400 M H z to 2.5 G H z * W ide operating voltage range: 2.7 to 6 V * at V 0=3V, f=1.8GHz typ. 26.5 dBm * High efficiency better 55 % X 2 1 ESD: V P S0S163


    OCR Scan     		PDF S0S163 Q62702-L90 615ms i77mS- 417ps siemens gaas fet gaas fet marking J

    P-SOT-143

    Abstract: CSY210 Type CF 739 Marking Ordering Code MSs P-SOT343-4-1 cly5 P-SOT143-4-1 Q62702-F1215 G69 marking
    Text: GaAs Components Infineon t »c h n o !o g i ss Alphanumeric Type Index 12 Alphanumeric Type Index GaAs RF-Transistors, MMICs and Modules Type Marking Ordering Code Package Page BGV 503 BGV 503 Q62702-L0132 P-TSSOP-10-1 170 BGV 903 BGV 903 Q62702-L0131 P-TSSOP-10-1


    OCR Scan     		PDF CFY30 1900C Q62702-L0132 Q62702-L0131 Q62702-F1215 Q62702-F1391 Q62705-K0603 Q62705-K0604 Q62702-G0116 P-SOT-143 CSY210 Type CF 739 Marking Ordering Code MSs P-SOT343-4-1 cly5 P-SOT143-4-1 G69 marking