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    3M 3M-501--CIRCLE-2.375--250

    TAPE MASKING PURPLE 2 3/8" DIA
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    CLE23 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CLE23 Clairex Electronics LED IRLED Original PDF
    CLE230 Clairex Electronics High Power Aluminum Gallium Arsenide IREDs Original PDF
    CLE230-TR Clairex Electronics LED IRLED Original PDF
    CLE230W Clairex Electronics High Power Aluminum Gallium Arsenide IREDs Original PDF
    CLE231 Clairex Electronics High Power Aluminum Gallium Arsenide IREDs Original PDF
    CLE231-TR Clairex Electronics LED IRLED Original PDF
    CLE231W Clairex Electronics High Power Aluminum Gallium Arsenide IREDs Original PDF
    CLE232 Clairex Electronics High Power Aluminum Gallium Arsenide IREDs Original PDF
    CLE232-TR Clairex Electronics LED IRLED Original PDF
    CLE232W Clairex Electronics High Power Aluminum Gallium Arsenide IREDs Original PDF
    CLE233 Clairex Electronics High Power Aluminum Gallium Arsenide IREDs Original PDF
    CLE234 Clairex Electronics LED IRLED Original PDF
    CLE234E Clairex Electronics Super-efficient Aluminum Gallium Arsenide Quad chip IRED Scan PDF
    CLE234W Clairex Electronics LED IRLED Original PDF
    CLE235 Clairex Electronics Aluminum Gallium Arsenide Collimated-Beam IRED Scan PDF

    CLE23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CLE234E

    Abstract: No abstract text available
    Text: CLE234E March, 2006 0.213 5.41 0.207 (5.26) 1.00 (25.4) min. 0.050 (1.27) max 0.100 (2.54) pin circle ANODE ANODE (connected to case) 0.169 (4.29) 0.163 (4.14) CATHODE CATHODE 0.010 (0.25) nom 0.147 (3.73) 0.137 (3.48) 0.019 (0.48) 0.016 (0.41) Cathode leads must be externally connected together


    Original     		PDF CLE234E 880nm 100mA 100mA, CLE234E

    Untitled

    Abstract: No abstract text available
    Text: CLE230W, CLE231W, CLE232W High Power Aluminum Gallium Arsenide IREDs Clairex Technologies, Inc. July, 2001 0.100 2.54 dia. 1.00 (25.4) min. 0.156 (3.96) 0.136 (3.45) 0.165 (4.19) 0.145 (3.68) 0.215 (5.46) 0.205 (5.21) ANODE 0.190 (4.83) 0.176 (4.47) CATHODE


    Original     		PDF CLE230W, CLE231W, CLE232W CLE230W 100mA

    CLE230W

    Abstract: CLE231W CLE232W CLT130W
    Text: CLE230W, CLE231W, CLE232W High Power Aluminum Gallium Arsenide IREDs Clairex Technologies, Inc. July, 2001 0.100 2.54 dia. 1.00 (25.4) min. 0.156 (3.96) 0.136 (3.45) 0.165 (4.19) 0.145 (3.68) 0.215 (5.46) 0.205 (5.21) ANODE 0.190 (4.83) 0.176 (4.47) CATHODE


    Original     		PDF CLE230W, CLE231W, CLE232W CLE230W 100mA 100mA 100mA. CLE231W CLE232W CLT130W

    CLE230W

    Abstract: CLE231W CLE232W CLT130W
    Text: CLE230W, CLE231W, CLE232W High Power Aluminum Gallium Arsenide IREDs Clairex Technologies, Inc. July, 2001 0.100 2.54 dia. 1.00 (25.4) min. 0.156 (3.96) 0.136 (3.45) 0.165 (4.19) 0.145 (3.68) 0.215 (5.46) 0.205 (5.21) ANODE 0.190 (4.83) 0.176 (4.47) CATHODE


    Original     		PDF CLE230W, CLE231W, CLE232W CLE230W 100ma CLE231W CLE232W CLT130W

    Untitled

    Abstract: No abstract text available
    Text: CLE234E March, 2006 0.213 5.41 0.207 (5.26) 1.00 (25.4) min. 0.050 (1.27) max 0.100 (2.54) pin circle ANODE ANODE (connected to case) 0.169 (4.29) 0.163 (4.14) CATHODE CATHODE 0.010 (0.25) nom 0.147 (3.73) 0.137 (3.48) 0.019 (0.48) 0.016 (0.41) Cathode leads must be externally connected together


    Original     		PDF CLE234E 880nm 100mA 100mA,

    CLE230

    Abstract: CLE231 CLE232 CLE233 CLT130
    Text: CLE230,CLE231,CLE232,CLE233 High Power Aluminum Gallium Arsenide IREDs Clairex Technologies, Inc. February, 2001 0.158 4.01 0.136 (3.45) 0.100 (2.54) dia. 1.00 (25.4) min. 0.210 (5.33) 0.190 (4.83) 0.215 (5.46) 0.205 (5.21) ANODE 0.190 (4.83) 0.176 (4.47)


    Original     		PDF CLE230 CLE231 CLE232 CLE233 100ma CLE233 CLT130

    Untitled

    Abstract: No abstract text available
    Text: CLE230,CLE231,CLE232,CLE233 High Power Aluminum Gallium Arsenide IREDs Clairex Technologies, Inc. February, 2001 0.100 2.54 dia. 1.00 (25.4) min. 0.210 (5.33) 0.190 (4.83) 0.215 (5.46) 0.205 (5.21) 0.158 (4.01) 0.136 (3.45) ANODE 0.190 (4.83) 0.176 (4.47)


    Original     		PDF CLE230 CLE231 CLE232 CLE233 100ma

    CLE234W

    Abstract: No abstract text available
    Text: CLE234W 0.165 4.19 0.145 (3.68) March, 2006 0.100 (2.54)0.100 dia. (2.54) pin circle dia. 1.00 (25.4) min. 0.215 (5.46) 0.205 (5.21) ANODE CATHODE (connected to case) 0.190 (4.83) 0.176 (4.47) CATHODE ANODE 0.025 (0.64) max. 0.019 (0.48) 0.016 (0.41)


    Original     		PDF CLE234W 880nm 100mA 100mA, CLE234W

    CLE230W

    Abstract: CLE231W CLE232W CLT130W
    Text: CLE230W, CLE231W, CLE232W High Power Aluminum Gallium Arsenide IREDs Clairex Technologies, Inc. July, 2001 0.100 2.54 dia. 1.00 (25.4) min. 0.156 (3.96) 0.136 (3.45) 0.165 (4.19) 0.145 (3.68) 0.215 (5.46) 0.205 (5.21) ANODE 0.190 (4.83) 0.176 (4.47) CATHODE


    Original     		PDF CLE230W, CLE231W, CLE232W CLE230W 100mA CLE231W CLE232W CLT130W

    MT29F8G08ABABA

    Abstract: MT29F8G08ABABAWP MT29F8G08aba MT29F8G08A MT29F8G08ab 29f8g08 Micron NAND flash M61A 8gb FLASH DRIVE 00H-31H
    Text: Micron Confidential and Proprietary 8Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F8G08ABABA, MT29F8G08ABCBB Features • Operation status byte provides software method for detecting – Operation completion – Pass/fail condition – Write-protect status


    Original     		PDF MT29F8G08ABABA, MT29F8G08ABCBB 09005aef8386131b MT29F8G08ABABA MT29F8G08ABABAWP MT29F8G08aba MT29F8G08A MT29F8G08ab 29f8g08 Micron NAND flash M61A 8gb FLASH DRIVE 00H-31H

    Untitled

    Abstract: No abstract text available
    Text: PROCESS CHLORINE/CHLORINE DIOXIDE ANALYZERS Electronics Only CLCN-20 Series 3479 $ BUILD A COMPLETE HIGH PERFORMANCE SYSTEM! Complete Basic System CLCN-23H Analyzer $1067 CLE-DLG Process Chamber ($626) Replaceable Membrane CLE-23 Sensor ($1492) ߜ Pulse Frequency Output


    Original     		PDF CLCN-20 CLCN-23H CLE-23 PHP-200 ppm/0-20 CLE-CB15 CLE-CB30 CLE-23E CLE-24E

    vlga

    Abstract: MT29F64G08 256Gb NAND
    Text: Micron Confidential and Proprietary 32Gb, 64Gb, 128Gb, 256Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F32G08ABAAA, MT29F64G08AFAAA, MT29F128G08A[J/K/M]AAA MT29F256G08AUAAA, MT29F32G08ABCAB, MT29F64G08AECAB MT29F128G08A[K/M]CAB, MT29F256G08AUCAB


    Original     		PDF 128Gb, 256Gb MT29F32G08ABAAA, MT29F64G08AFAAA, MT29F128G08A MT29F256G08AUAAA, MT29F32G08ABCAB, MT29F64G08AECAB MT29F256G08AUCAB vlga MT29F64G08 256Gb NAND

    MT29F16G08ABACA

    Abstract: MT29F16G08ABACAWP 64gb NAND chip MT29F32G08afacawp MT29F32G08AFACA MT29F64G08 M72A micron nand flash chip 16gb MT29F16G08ABCCBH1-10ITZ:C TR MT29F16G08AB
    Text: Micron Confidential and Proprietary 16Gb, 32Gb, 64Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F16G08ABACA, MT29F32G08AFACA MT29F16G08ABCCB, MT29F32G08AECCB, MT29F64G08AKCCB Features • Data strobe DQS signals provide a hardware method for synchronizing data DQ in the synchronous


    Original     		PDF MT29F16G08ABACA, MT29F32G08AFACA MT29F16G08ABCCB, MT29F32G08AECCB, MT29F64G08AKCCB 09005aef844588dc MT29F16G08ABACA MT29F16G08ABACAWP 64gb NAND chip MT29F32G08afacawp MT29F64G08 M72A micron nand flash chip 16gb MT29F16G08ABCCBH1-10ITZ:C TR MT29F16G08AB

    MT29F16G08ABACA

    Abstract: MT29F32G08afacawp JESD47 compliant MT29F32G08AFACA MT29F16G08Abacawp MT29F32G08A MT29F64G08A MT29F64G08 DR10H NAND Flash DIE
    Text: Micron Confidential and Proprietary 16Gb, 32Gb, 64Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F16G08ABACA, MT29F32G08AFACA MT29F16G08ABCCB, MT29F32G08AECCB, MT29F64G08AKCCB Features • Data strobe DQS signals provide a hardware method for synchronizing data DQ in the synchronous


    Original     		PDF MT29F16G08ABACA, MT29F32G08AFACA MT29F16G08ABCCB, MT29F32G08AECCB, MT29F64G08AKCCB 09005aef844588dc MT29F16G08ABACA MT29F32G08afacawp JESD47 compliant MT29F16G08Abacawp MT29F32G08A MT29F64G08A MT29F64G08 DR10H NAND Flash DIE

    mt29f128g08

    Abstract: MT29F256G08 MT29F64G08 MT29F64G08AE MT29F32G08 MT29F128G MT29F256G08A MT29F128G08AM MT29F256G MT29F128
    Text: Micron Confidential and Proprietary 32Gb, 64Gb, 128Gb, 256Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F32G08ABAAA, MT29F64G08AFAAA, MT29F128G08A[J/K/M]AAA MT29F256G08AUAAA, MT29F32G08ABCAB, MT29F64G08AECAB MT29F128G08A[K/M]CAB, MT29F256G08AUCAB


    Original     		PDF 128Gb, 256Gb MT29F32G08ABAAA, MT29F64G08AFAAA, MT29F128G08A MT29F256G08AUAAA, MT29F32G08ABCAB, MT29F64G08AECAB MT29F256G08AUCAB mt29f128g08 MT29F256G08 MT29F64G08 MT29F64G08AE MT29F32G08 MT29F128G MT29F256G08A MT29F128G08AM MT29F256G MT29F128

    MT29F16G08ABACA

    Abstract: MT29F32G08 MT29F16G08ABACAWP 29f16g08 MT29F32G08AFACA MT29F16G08ABA MT29F32G08afacawp M72A Micron ONFI 2.2 MT29F16G08ABAC
    Text: Micron Confidential and Proprietary Advance‡ 16Gb, 32Gb Asynchronous/Synchronous NAND Features NAND Flash Memory • Data strobe DQS signals provide a hardware method for synchronizing data DQ in the synchronous interface • Copyback operations supported within the plane


    Original     		PDF MT29F16G08ABACA, MT29F32G08AFACA MT29F16G08ABCCB, MT29F32G08AECCB MT29F16G08ABCCBH1 09005aef83fccd10 MT29F16G08ABACA MT29F32G08 MT29F16G08ABACAWP 29f16g08 MT29F16G08ABA MT29F32G08afacawp M72A Micron ONFI 2.2 MT29F16G08ABAC

    uv phototransistor

    Abstract: CLD240E CLD271 CLD240 LED NIGHT LAMP CIRCUIT CLL133 cll135 CLD340 CL9P5L CLL136
    Text: Clairex OPTOELECTRONIC Technologies, Inc. PACKAGING & PRODUCTS 1301 East Plano Parkway Plano, Texas 75074-8524 PH: 972-265-4900 FAX: 972-265-4949 www.clairex.com CLAIREX TODAY Clairex Technologies, incorporated in Texas in 1994, has grown to become an internationally recognized leader in


    Original     		PDF 390nm 465nm 525nm 660nm 850nm uv phototransistor CLD240E CLD271 CLD240 LED NIGHT LAMP CIRCUIT CLL133 cll135 CLD340 CL9P5L CLL136

    MT29F32G08

    Abstract: MT29F64G08 MT29F32G08A MT29F16G08ABABA MT29F16G08ABABAWP MT29F128G08A MT29F64G08A mt29f128g08 MT29F16G08ABA MT29F16G08A
    Text: Micron Confidential and Proprietary 16Gb, 32Gb, 64Gb, 128Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F16G08ABABA, MT29F32G08AFABA, MT29F64G08A[J/K/M]ABA, MT29F128G08AUABA, MT29F16G08ABCBB, MT29F32G08AECBB, MT29F64G08A[K/M]CBB, MT29F128G08AUCBB


    Original     		PDF 128Gb MT29F16G08ABABA, MT29F32G08AFABA, MT29F64G08A MT29F128G08AUABA, MT29F16G08ABCBB, MT29F32G08AECBB, MT29F128G08AUCBB 128Gb: MT29F32G08 MT29F64G08 MT29F32G08A MT29F16G08ABABA MT29F16G08ABABAWP MT29F128G08A mt29f128g08 MT29F16G08ABA MT29F16G08A

    MT29F8G08aba

    Abstract: MT29F8G08A MT29F8G08ABABAWP MT29F8G08ABABA MT29F8G08ABAB MT29F8G08ab MT29F8G08ABCBB 29f8g08 MT29F8G08ABCBBH1 MT29F8G08ABABAW
    Text: Micron Confidential and Proprietary 8Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F8G08ABABA, MT29F8G08ABCBB • Operation status byte provides software method for detecting – Operation completion – Pass/fail condition – Write-protect status


    Original     		PDF MT29F8G08ABABA, MT29F8G08ABCBB 09005aef8386131b MT29F8G08aba MT29F8G08A MT29F8G08ABABAWP MT29F8G08ABABA MT29F8G08ABAB MT29F8G08ab 29f8g08 MT29F8G08ABCBBH1 MT29F8G08ABABAW

    MT29F64G08

    Abstract: MT29F256G08 mt29f128g08 29F64G08 MT29F64G08CBAA MT29F64G08CB MT29F128 MT29F128G08CFAAB MT29F64G08cba MT29F64G
    Text: Micron Confidential and Proprietary 64Gb, 128Gb, 256Gb, 512Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F64G08CBAA[A/B], MT29F128G08C[E/F]AAA, MT29F128G08CFAAB, MT29F256G08C[J/K/M]AAA, MT29F256G08CJAAB, MT29F512G08CUAAA, MT29F64G08CBCAB, MT29F128G08CECAB, MT29F256G08C[K/M]CAB,


    Original     		PDF 128Gb, 256Gb, 512Gb MT29F64G08CBAA MT29F128G08C MT29F128G08CFAAB, MT29F256G08C MT29F256G08CJAAB, MT29F512G08CUAAA, MT29F64G08CBCAB, MT29F64G08 MT29F256G08 mt29f128g08 29F64G08 MT29F64G08CB MT29F128 MT29F128G08CFAAB MT29F64G08cba MT29F64G

    CLE235

    Abstract: No abstract text available
    Text: CLE235 g * Claire* Aluminum Gallium Arsenide Collimated-Beam IRED Technologies, inc. March.200, ALL DIMENSIONS ARE IN INCHES MILLIMETERS features • • • • absolute maximum ratings (TA = 25°C unless otherwise stated) wide usable temperature range


    OCR Scan     		PDF CLE235 880nm CLE235

    CLE234E

    Abstract: No abstract text available
    Text: CLE234E Clairex Super-efficient Aluminum Gallium Arsenide Quad chip IRED Technologies, Inc. 0.130 3.30 max March, 2001 1.00 (25.4) min. 0,213(5.41) 0.207 (5.26) . 0.050 (1.27) max 0.100(2.54) pin circi ANODE 0.169(4.29) 0 1 6 3 (4 1 4 ) '111 CATHODE * (—-0.010 (0.25) nom


    OCR Scan     		PDF CLE234E 880nm CLE234E 500mA 500mA,

    Untitled

    Abstract: No abstract text available
    Text: CLE235 € ' Aluminum Gallium Arsenide Collimated-Beam IRED features • • • • Clairex Technologies, Inc. absolute maximum ratings TA = 25°C unless otherwise stated wide usable temperature range 880nm wavelength TO-46 hermetic package narrow collimated beam


    OCR Scan     		PDF CLE235 880nm 100mA CLE235 not81

    mt4c16m1

    Abstract: No abstract text available
    Text: ADVANCE I^ IIC R O N 16 MEG X MT8D168 8 DRAM MODULE 16 MEG X 8 DRAM DRAM MODULE FAST-PAGE-MODE FEATURES PIN ASSIGNMENT Top View • Industry-standard pinout in a 30-pin single-in-line package • High-performance CMOS silicon-gate process • Single 5V ±10% power supply


    OCR Scan     		PDF MT8D168 30-pin 600mW 096-cycle A0-A10; MT80168 A0-A11 mt4c16m1