CLASS-C MOSFET Search Results

MSK101

Abstract: MSK101B deflection Bridge
Contextual Info: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. HIGH POWER DUAL OPERATIONAL AMPLIFIER 4707 Dey Road Liverpool, N.Y. 13088 101 315 701-6751 FEATURES: Operates In Class AB Or Class C Mode Low Cost High Voltage Operation : 150V Low Quiescent Current : ± 8.0 mA Total Typ. In Class "C" Mode

schematics for a PA amplifier class c

Abstract: MSK153 MSK153B AUDIO MOSFET POWER AMPLIFIER SCHEMATIC
Contextual Info: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. HIGH POWER OPERATIONAL AMPLIFIER 4707 Dey Road Liverpool, N.Y. 13088 153 315 701-6751 FEATURES: MIL-PRF-38534 QUALIFIED Operates In Class AB Or Class C Mode Low Cost High Voltage Operation : 150V Low Quiescent Current :± 4.0 mA Typ. In Class "C"

ATC100B470JT500XT

Abstract: ATC600F101JT250XT GSC362-HYB0900 mrf8p MRF8P9210 mrf8p9210n ATC100B240JT500X ATC100B7R5CT500XT ATC100B9R1CT500XT
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P9210N Rev. 0, 12/2011 c RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P9210N Rev. 0, 12/2011 c RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base

4325-DS-01

Abstract: ISO 18000-6D
Contextual Info: EM MICROELECTRONIC - MARIN SA EM4325 18000-6 Type C Gen2 and Type C/D (Gen2/TOTAL) RFID IC Description EM4325 is a Class-3 Generation-2 (Gen2) IC that is compliant with ISO/IEC 18000-6:2010 Type C and Type D TM (TOTAL) as well as EPC Class-1 Generation-2. The chip

ISO 18000-6D

Abstract: EM4325 18000-6D antenna application note matching RFID loop antenna 8045N UHF RFID loop antenna design MOSFET blf power rf 80bit Transponder rtc tamper detection sensors
Contextual Info: EM MICROELECTRONIC - MARIN SA EM4325 18000-6 Type C Gen2 and Type C/D (Gen2/TOTAL) RFID IC Description Features EM4325 is a Class-3 Generation-2 (Gen2) IC that is compliant with ISO/IEC 18000-6:2010 Type C and Type D TM (TOTAL) as well as EPC Class-1 Generation-2. The chip

ISO 18000-6D

Contextual Info: EM MICROELECTRONIC - MARIN SA EM4325 18000-6 Type C Gen2 and Type C/D (Gen2/TOTAL) RFID IC Description Features EM4325 is a Class-3 Generation-2 (Gen2) IC that is compliant with ISO/IEC 18000-6:2010 Type C and Type D TM (TOTAL) as well as EPC Class-1 Generation-2. The chip

MRF8P182

Abstract: ATC600F0R1BT250XT atc600f150jt250xt
Contextual Info: Document Number: MRF8P18265H Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA and multicarrier base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for

ATC600F0R1BT250XT

Contextual Info: Document Number: MRF8P18265H Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA and multicarrier base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for

MRF8P9040N

Abstract: MPZ2012S300AT000 MRF8P9040GNR1 AN1955 293D106X9050E2TE3 MRF8P9040NB ATC100B820JT MRF8P9040NR1 J583
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P9040N Rev. 1, 10/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA, W-CDMA and LTE base station applications with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P9040N Rev. 1, 10/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA, W-CDMA and LTE base station applications with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S7170N Rev. 2, 2/2014 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S7170NR3 Designed for base station applications with frequencies from 618 to 803 MHz. Can be used in Class AB and Class C for all typical cellular base

J014

Abstract: BLM21PG300SN1D
Contextual Info: Document Number: MRF8S8260H Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 790 to 895 MHz. Can be used in Class AB and Class C for all typical cellular base

MRF8P20140WHS

Abstract: mrf8p20140 J473 MRF8P20140W
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P20140WH Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base

mosfet j172

Abstract: J263 MRF8S9200N MRF8S9200NR3 MOSFET Transistors IRL AN1955 mosfet j133 J133 mosfet transistor J181 ATC100B1R2BT
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S9200N Rev. 1, 5/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base

D1880

Abstract: AN1955 41* RF tuner
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P18265H Rev. 0, 8/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA and multicarrier base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all typical

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S7235N Rev. 0, 6/2012 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S7235NR3 Designed for base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base

mosfet j172

Abstract: GRM55DR61H106K atc100b6r8 J263 J181 ATC100B1R2BT500XT MRF8S9200N MRF8S9200NR3 j139 ATC100B100JT500X
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S9200N Rev. 0, 8/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P20161HS Rev. 0, 10/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S9102N Rev. 0, 2/2011 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base

MRF8P20140WH/HS

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P20140WH Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base

MRF8P9040N

Abstract: mrf8p ATC100B820JT RO4350B
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P9040N Rev. 0, 9/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA, W-CDMA and LTE base station applications with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for

mosfet J442

Abstract: ATC600F2R0BT250XT J442 CW12010T0050G ATC600F100JT250XT CW12010T0050GBK AN1955 96VDD J596
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P20161HS Rev. 0, 10/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P20140WH Rev. 1, 11/2013 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base