CLA TRANSISTOR Search Results

SS8050

Abstract: transistor TO-92 SS8050
Contextual Info: SS8050 NPN EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLA SS B PUSH-PULL OPERATION. TO -92 • Complimentary to SS8550 • Collector Current lc= 1-5A • Collector Dissipation Pc =2W Tc =25°C ABSOLUTE MAXIMUM RATINGS (Ta= 25°C)

bd136 equivalent

Abstract: transistor bd136
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor Designed for 24 Volt UHF large-signal, com m on emitter, cla ss-A B linear am plifier applications in industrial and com mercial FM/AM equipment operating in the range 8 0 0 -9 7 0 MHz.

74S00 TTL

Abstract: 54S112 54s350 54S35
Contextual Info: SCHOTTKYTTL 1» SIGNETICS INTEGRATED CIRCUITS 54S00 Series 74S00 Series The 54S00/74S00 series of product is fabricated with a non­ s a tu ra tin g S c h o ttk y cla m p e d transistor technique. This family of TTL product consists of very high performance and high power

AN-7514

Abstract: varistor 472 SUS bt 2328 RFP22N10 rpf22n10 C150 IAS150
Contextual Info: Single Pulse Unclamped Inductive Switching: A Rating System Application Note Title N93 bt nse cla ed uce itch :A ting sm utho Unexpected transients in electrical circuits are a fact of life. The most potentially damaging transients enter a circuit on the power source lines feeding the circuit. Power control and

BD234

Contextual Info: MO TQR CLA SC 1SE D | 1 317554 00fiM7ai 1 | XSTRS/R F 7^-33-/? MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2.0 AMPERES POWER TRANSISTOR PNP SILICON PLASTIC MEDIUM POWER SILICON PNP TRANSISTOR . . . d e sig n e d for u se in 5.0 to 10 W a tt a u d io a m p lifie rs a n d drivers

Contextual Info: 4QE D •3 345573A QODIDflS 2 ^ S E N I FASCO INDS/ SENISVS .0 5 0 - CLA 90 CLA90AA Digital Output High Voltage Axial Lead Isolators .425 MIN. GENERAL DESCRIPTION — The Clairex Electronics CLA90 series isolator features axial lead construction for high isolation voltage of 10KV D.C. minimum. The construc­

Contextual Info: 3 Rail-M ounted Terminal Blocks with Coupler Function, with C A G E CLA M P COM PACT Connection, 6m m /0.236 in W ide see also Full Line Catalog W 3, volume 1, pages 3.12 - 3.13 Optocoupler Input: Output: Optocoupler Input: Output: VOLUME 1 DC 24 V DC 24 V/3 A

Contextual Info: MG TQR CLA SC X S TR S/R F 12E D | b3b?2S4 DGêHItl T | MOTOROLA SEM ICO N DUCTOR TECHNICAL DATA POWER DARLINGTON TRANSISTORS NPN SILICON D A R L IN G T O N 10 A M P E R E POWER TRANSISTORS NPN SILICON . for ge ne ral p urp ose pow er am plification and s w itch ing s u c h a s

BFX17

Contextual Info: SILICON PLANAR NPN B F X 17 CLA SS C V H F A M P L IF IE R The BFX 17 is a silicon planar epitaxial NPN transistor in Jedec TO-39 metal case, designed for high-voltage, high-current class C VHF amplifier applications. A B S O L U T E M A X I M U M R A T IN G S

Contextual Info: Rail-Mounted Terminal Blocks with Coupler Function, with CA G E CLA M P* COMPACT Connection, 6 m m /0.236 in Wide / electpJ nu-k | see also Full Line C atalog W 3 , volum e 1, pages 3.12 - 3.13 DC 24 V DC 24 V l awmOA Optocoupler Input: Output: 0.08 - 2 .5 m m 2 / AWG 28 - 14

BTS 5242-2L

Abstract: 5242-2l
Contextual Info: Product Brief BTS 5242-2L Smart High-Side Power Switch Two Channels 25 mΩ T H E B T S 5 2 4 2 - 2 L is a dual channel high-side power switch two times 25 mΩ in PG-DSO-12 power package providing embedded protective functions. Integrated resistors at each input pin (IN1, IN2, CLA) reduce

ECG772A

Abstract: ECG772 ECG77 0d03
Contextual Info: P H IL IP S E C G 17E INC D ^ 5 3 1 2 0 ECG772A CLA SS B AUDIO DRIVER semiconductors 7 NPN DRIVE INPUT [ 7 • • • • Driver for A uto Radios - and up to 20-Watt Amplifiers High Input Impedance - 50Q*KHohm Capability Output Biasing Oiodes Included No Special h p E Matching of Outputs Required

Contextual Info: Q j Super high speed switching transistors Dovii.c typo V cbo Volts Volts VcEO sus Volli; 2SC3317 500 400 400 5 2SC3K65 500 400 400 5 2SC3318 500 400 400 2SC3320 500 400 2SC4/bO 500 400 2SC4831 500 Ë 1400 FT401 B VcEO le Pc cont. A m ps. W atts P • S u ita b le fo r 100kHz cla ss sw itc h in g regu la tors

International Power Sources

Abstract: LWE2025R
Contextual Info: T -3 3 -0 5 LWE2025R / \ PHILIPS INTERNATIONAL 5bE D • 711Dfl5b DDMbSTfc. 35fl BiPHIN MICROWAVE LINEAR POWER TRANSISTOR NPN silicon p ow er tra n sisto r fo r use in a co m m o n -e m itte r,cla ss-A a m p lifie r up to 2.3 G H z in CW c o n d itio n s in m ilita ry and professional applications.

24v 8 channel Relay driver

Contextual Info: M I T S U B I S H I B S P O L A R DIG T A L ICs M5452SP 7-UNIT SOOmA DARLINGTON TRA N SISTO R ARRAY WITH CLA M P DIODE DESCRIPTION The M54525P, 7-channel sink driver, consists of 14 NPN tran­ sistors connected to form high current gain driver pairs. PIN CONFIGURATION TOP VIEW)

Contextual Info: ERICSSON ^ PTB 20179 0.4 Watt, 1.8-2.0 GHz Cellular Radio RF Power Transistor D escription T he 2017 9 is a cla ss A, NPN, com m o n em itter RF po w e r tra n sisto r intended fo r 25 V d c o p era tion from 1.8 to 2.0 G Hz. Rated at 0.4 w a tt m inimum output power, it m ay be used for both C W and PEP applications.

str 5453

Contextual Info: M I T S U B I S H I B IP O L A R D I G I T A L ICs M54533P 6-UNIT 320mA TR A N SISTO R ARRAY WITH CLA M P DIODE AND STR O B E DESCRIPTION The M54533P, 6-channel sink driver, consists of 12 NPN tran­ sistors to form high current gain driver pairs. PIN CONFIGURATION TOP VIEW

Contextual Info: MOTOROLA Order this document by MRF6404/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor T he M R F 6 4 0 4 is d e sig ned fo r 26 vo lts m icro w a ve large sig na l, com m o n em itter, cla ss AB linea r a m p lifie r a p p lica tio n s op e ra tin g in th e range 1.8 to

54585P

Abstract: M54585 M54585P
Contextual Info: M IT S U B IS H I BIPOLAR DIGITAL ICs M 54585P 8 -U N IT 500m A DA RLIN G TO N TR A N S IS T O R ARRAY W IT H C L A M P DIODE DESCRIPTION PIN CONFIGURATION TOP VIEW "he M 5 4 5 8 5 P , 8 -c h a n n e l sink driver, consists of 16 NPN d arlington transistors with internal cla m p diodes conn ected

Contextual Info: ERICSSON ^ PTB 20009 2.5 Watts, 935-960 MHz Cellular Radio RF Power Transistor D escription T he 20 00 9 is a cla ss AB, NPN, com m o n em itter RF po w e r tra n sisto r intended fo r 24 V dc op era tion acro ss th e 935 to 960 M H z fre q u e n cy band. Rated at 2.5 W atts m inim um ou tput pow er, it m ay be used fo r

E2023

Abstract: TeS ERICSSON
Contextual Info: ERICSSON í E 20237* 150 Watts, 4 7 0 - 8 6 0 MHz UHF TV P o w e r Transistor Description T h e E 2023 7 is a cla ss AB, NPN, com m o n e m itte r U H F T V po w e r tra n sisto r in tended fo r 28 V dc operation from 470 to 860 M Hz. Rated at 150 w a tts m inim um ou tput pow er, it m ay be used for both C W and

Contextual Info: ERICSSON ^ PTB 20011 20 Watts P-Sync, 470-860 MHz UHF TV Linear Power Transistor D escription T he 20011 is a cla ss A, NPN, com m o n e m itter U H F po w e r tra n sisto r intended fo r 26.5 V d c o p era tion from 470 to 860 M Hz. It is rated at 20 w a tts p-sync o u tp u t power, and m ay be used fo r both C W and PEP

Contextual Info: ERICSSON í PTB 20245 35 Watts, 2 . 1 - 2 . 2 GHz P C N / P C S P o w e r Transistor Description T h e 20 24 5 is a cla ss AB, NPN com m on em itter RF p o w e r tra n sisto r in tended for 26 V dc operation from 2.1 to 2.2 G H z fre q u e n cy band. Rated at 35 w a tts m inim um ou tput po w e r for PEP ap plicatio ns, it is

a331j

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6404 NPN Silicon RF Power Transistor T h e M R F 6 4 0 4 is d e s ig n e d fo r 2 6 v o lts m ic ro w a v e larg e sig n a l, c o m m o n em itte r, cla ss A B lin e a r a m p lifie r a p p lic a tio n s o p e ra tin g in th e ra ng e 1.8 to