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    CKE 2009 AMP Search Results

    CKE 2009 AMP Datasheets Context Search

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    M8 A02

    Abstract: 8X13
    Text: W9812G2IB 1M x 4 BANKS × 32BITS SDRAM Table of Contents1. GENERAL DESCRIPTION . 3 2. FEATURES. 3


    Original     		PDF W9812G2IB 32BITS M8 A02 8X13

    W9864G2IH-6I

    Abstract: w9864g2ih6i W9864G2IH6
    Text: W9864G2IH 512K x 4 BANKS × 32BITS SDRAM Table of Contents1. GENERAL DESCRIPTION . 3 2. FEATURES . 3


    Original     		PDF W9864G2IH 32BITS W9864G2IH-6I w9864g2ih6i W9864G2IH6

    CKE 2009

    Abstract: W9864G2IH W9864G2IH-6 W9864G2iH-6I
    Text: W9864G2IH 512K X 4 BANKS X 32BITS SDRAM Table of Contents1. GENERAL DESCRIPTION . 3 2. FEATURES . 3


    Original     		PDF W9864G2IH 32BITS CKE 2009 W9864G2IH W9864G2IH-6 W9864G2iH-6I

    w9812g2ib-6i

    Abstract: W9812G2IB
    Text: W9812G2IB 1M x 4 BANKS × 32BITS SDRAM Table of Contents1. GENERAL DESCRIPTION . 3 2. FEATURES. 3


    Original     		PDF W9812G2IB 32BITS w9812g2ib-6i

    W9812G2IH-6

    Abstract: W9812G2IH-6C W9812G2IH6I
    Text: W9812G2IH 1M x 4 BANKS × 32BIT SDRAM Table of Contents1 GENERAL DESCRIPTION . 3 2 FEATURES. 3


    Original     		PDF W9812G2IH 32BIT W9812G2IH-6 W9812G2IH-6C W9812G2IH6I

    h5tq1g83bfr

    Abstract: HMT151R7BFR8C-G7 HMT151R7BFR4C H5TQ1G83BF
    Text: 240pin DDR3 SDRAM Registered DIMM DDR3 SDRAM Registered DIMM Based on 1Gb B-die HMT112R7BFR8C HMT125R7BFR8C HMT125R7BFR4C HMT151R7BFR8C HMT151R7BFR4C *Hynix Semiconductor reserves the right to change products or specifications without notice Rev. 1.0 / Dec. 2009


    Original     		PDF 240pin HMT112R7BFR8C HMT125R7BFR8C HMT125R7BFR4C HMT151R7BFR8C HMT151R7BFR4C 512Mx72 010mm h5tq1g83bfr HMT151R7BFR8C-G7 HMT151R7BFR4C H5TQ1G83BF

    DDR3L-1333

    Abstract: No abstract text available
    Text: 240pin DDR3L SDRAM Registered DIMM DDR3L SDRAM Registered DIMM Based on 1Gb T-die HMT112R7TFR8A HMT125R7TFR8A HMT125R7TFR4A HMT151R7TFR8A HMT151R7TFR4A *Hynix Semiconductor reserves the right to change products or specifications without notice Rev. 0.1 / Dec. 2009


    Original     		PDF 240pin HMT112R7TFR8A HMT125R7TFR8A HMT125R7TFR4A HMT151R7TFR8A HMT151R7TFR4A 512Mx72 010mm DDR3L-1333

    8X13

    Abstract: No abstract text available
    Text: W9864G2IB 512K x 4 BANKS × 32BITS SDRAM Table of Contents1. GENERAL DESCRIPTION . 3 2. FEATURES. 3


    Original     		PDF W9864G2IB 32BITS 8X13

    Untitled

    Abstract: No abstract text available
    Text: W9816G6IB 512K x 2 BANKS × 16 BITS SDRAM Table of Contents1. GENERAL DESCRIPTION . 3 2. FEATURES . 3


    Original     		PDF W9816G6IB

    Untitled

    Abstract: No abstract text available
    Text: W9864G6IH 1M x 4BANKS × 16BITS SDRAM Table of Contents1. GENERAL DESCRIPTION . 3 2. FEATURES . 3


    Original     		PDF W9864G6IH 16BITS

    cke 2009

    Abstract: W9812G2IH-6 W9812G2IH-6C W9812G2IH
    Text: W9812G2IH 1M x 4 BANKS × 32BIT SDRAM Table of Contents1 GENERAL DESCRIPTION . 3 2 FEATURES. 3


    Original     		PDF W9812G2IH 32BIT cke 2009 W9812G2IH-6 W9812G2IH-6C W9812G2IH

    Untitled

    Abstract: No abstract text available
    Text: 240pin DDR3 SDRAM Registered DIMM DDR3L SDRAM Registered DIMM Based on 2Gb A-die HMT325R7AFR8A HMT351R7AFR8A HMT351R7AFR4A HMT31GR7AFR8A HMT31GR7AFR4A HMT42GR7AMR4A *Hynix Semiconductor reserves the right to change products or specifications without notice.


    Original     		PDF 240pin HMT325R7AFR8A HMT351R7AFR8A HMT351R7AFR4A HMT31GR7AFR8A HMT31GR7AFR4A HMT42GR7AMR4A 010mm 2Gx72 HMT42GR7AMR4A

    HMT112R7BFR8A-G7

    Abstract: DDR3 RDIMM
    Text: 240pin DDR3L SDRAM Registered DIMM DDR3L SDRAM Registered DIMM Based on 1Gb B-die HMT112R7BFR8A HMT125R7BFR8A HMT125R7BFR4A HMT151R7BFR8A HMT151R7BFR4A *Hynix Semiconductor reserves the right to change products or specifications without notice Rev. 0.1 / Nov. 2009


    Original     		PDF 240pin HMT112R7BFR8A HMT125R7BFR8A HMT125R7BFR4A HMT151R7BFR8A HMT151R7BFR4A 512Mx72 010mm HMT112R7BFR8A-G7 DDR3 RDIMM

    Untitled

    Abstract: No abstract text available
    Text: 240pin DDR3 SDRAM Registered DIMM DDR3 SDRAM Registered DIMM Based on 1Gb T-die HMT112R7TFR8C HMT125R7TFR8C HMT125R7TFR4C HMT151R7TFR8C HMT151R7TFR4C *Hynix Semiconductor reserves the right to change products or specifications without notice Rev. 0.1 / Dec. 2009


    Original     		PDF 240pin HMT112R7TFR8C HMT125R7TFR8C HMT125R7TFR4C HMT151R7TFR8C HMT151R7TFR4C 512Mx72 010mm

    W9825G6EH75I

    Abstract: No abstract text available
    Text: W9825G6EH 4 M x 4 BANKS × 16 BITS SDRAM Table of Contents1. GENERAL DESCRIPTION . 3 2. FEATURES . 3


    Original     		PDF W9825G6EH W9825G6EH75I

    CKE 2009

    Abstract: W9825G2DB W9825G2DB-6
    Text: W9825G2DB 2M x 4 BANKS × 32BITS SDRAM Table of Contents1. GENERAL DESCRIPTION. 3 2. FEATURES . 3


    Original     		PDF W9825G2DB 32BITS CKE 2009 W9825G2DB W9825G2DB-6

    0.65mm pitch BGA

    Abstract: M52S16161A M52S16161A-10TG M52S16161A-8BG M52S16161A-8TG EsmtM52S16161A
    Text: ESMT M52S16161A Mobile SDRAM 512K x 16Bit x 2Banks Mobile Synchronous DRAM FEATURES z z z z z z z z z z z GENERAL DESCRIPTION 2.5V power supply LVCMOS compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency 2 & 3


    Original     		PDF M52S16161A 16Bit M52S16161A 0.65mm pitch BGA M52S16161A-10TG M52S16161A-8BG M52S16161A-8TG EsmtM52S16161A

    M12L16161A-7TG

    Abstract: M12L16161A M12L16161A-5TG M12L16161
    Text: ESMT M12L16161A SDRAM 512K x 16Bit x 2Banks Synchronous DRAM FEATURES z z z z z z z z z GENERAL DESCRIPTION JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency 2 & 3


    Original     		PDF M12L16161A 16Bit M12L16161A M12L16161A-7TG M12L16161A-5TG M12L16161

    M52D16161A

    Abstract: M52D16161A-10BG M52D16161A-10TG cke 2009 amp
    Text: ESMT M52D16161A Mobile SDRAM 512K x 16Bit x 2Banks Mobile Synchronous DRAM FEATURES z z z z z z z z z z z GENERAL DESCRIPTION The M52D16161A is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with high performance CMOS technology.


    Original     		PDF M52D16161A 16Bit M52D16161A M52D16161A-10BG M52D16161A-10TG cke 2009 amp

    M12S64322A

    Abstract: M12S64322A-6BG M12S64322A-6TG M12S64322A-7TG
    Text: ESMT M12S64322A SDRAM 512K x 32 Bit x 4 Banks Synchronous DRAM FEATURES y y y y y y y y ORDERING INFORMATION JEDEC standard 2.5V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency 2 & 3


    Original     		PDF M12S64322A M12S64322A-6TG 166MHz M12S64322A-7TG 143MHz M12S64322A-6BG 90BGA M12S64322A-7BG M12S64322A M12S64322A-6BG M12S64322A-6TG M12S64322A-7TG

    H55S1262EFP

    Abstract: No abstract text available
    Text: 128MBit MOBILE SDR SDRAMs based on 2M x 4Bank x16 I/O Specification of 128M 8Mx16bit Mobile SDRAM Memory Cell Array - Organized as 4banks of 2,097,152 x16 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for


    Original     		PDF 128MBit 8Mx16bit) 128Mbit H55S1262EFP 16bits 200us

    HY57V561620FTP-H

    Abstract: No abstract text available
    Text: 256Mb Synchronous DRAM based on 4M x 4Bank x16 I/O 256M 16Mx16bit Hynix SDRAM Memory Memory Cell Array - Organized as 4banks of 4,194,304 x 16 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for


    Original     		PDF 256Mb 16Mx16bit) 256Mbit HY57V561620F 256Mbit HY57V561620FTP-H

    M52D16161A

    Abstract: No abstract text available
    Text: ESMT M52D16161A Operation Temperature Condition -40°C~85°C Mobile SDRAM 512K x 16Bit x 2Banks Mobile Synchronous DRAM FEATURES z z z z z z z z z z z GENERAL DESCRIPTION 1.8V power supply LVCMOS compatible with multiplexed address Dual banks operation MRS cycle with address key programs


    Original     		PDF M52D16161A 16Bit M52D16rate M52D16161A

    Untitled

    Abstract: No abstract text available
    Text: ESMT SDRAM M52S128324A 1M x 32 Bit x 4 Banks Synchronous DRAM FEATURES y y y y y y y y y JEDEC standard 2.5V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency 1, 2 & 3 - Burst Length ( 1, 2, 4, 8 & full page )


    Original     		PDF M52S128324A M52S128324A-7TG 143MHz M52S128324A-7BG 143Min