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KEMET Corporation CK06BX105K Multilayer Ceramic Capacitors MLCC - Leaded 50V 1 uF BX 10% 5.08 mm CK06
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	CK06BX105K		18,339			1 $5.91 10 $4.04 100 $3.6 1000 $2.93 10000 $2.74	Buy Now
KEMET Corporation C062K105K5X5CA7301 Multilayer Ceramic Capacitors MLCC - Leaded 50V 1 uF BX 10% 5.08 mm LDD Mil X7R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	C062K105K5X5CA7301		1,422			1 $5.91 10 $4.01 100 $3 1000 $2.98 10000 $2.74	Buy Now
KEMET Corporation CK06BX105K7301 Multilayer Ceramic Capacitors MLCC - Leaded 50V 1 uF BX 10% 5.08 mm CK06
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	CK06BX105K7301		1,313			1 $5.91 10 $4.01 100 $3 1000 $2.39 10000 $2.28	Buy Now
Kyocera AVX Components CK06BX105M Multilayer Ceramic Capacitors MLCC - Leaded MOLDED RADIAL STD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	CK06BX105M		876			1 $6.76 10 $5.54 100 $5.54 1000 $4.42 10000 $4.42	Buy Now
Kyocera AVX Components CK06BX105K Multilayer Ceramic Capacitors MLCC - Leaded 1.0UF 50V 10% 5.08MM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	CK06BX105K		630			1 $8.44 10 $6.45 100 $5.26 1000 $4.36 10000 $4.36	Buy Now

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CK-06 105 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
ar9350 Abstract: Apple 820-1881 p51 apple diode sot 143 s5 C7555 PP3V42G3H 101B SOT23-6 ah530 R7549 MLB-EVT Text: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV SCHEM,MLB,M1 ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE D DATE 428208PRODUCTION RELEASED 03/04/06	Original	ITP700FLEX ar9350 Apple 820-1881 p51 apple diode sot 143 s5 C7555 PP3V42G3H 101B SOT23-6 ah530 R7549 MLB-EVT	PDF
IC43R16320B Abstract: DDR333 DDR400 IC43R16320B-6TL Text: IS43R16320B IC43R16320B 512 Mb Double Data Rate Synchronous DRAM PRELIMINARY INFORMATION JUNE 2008 Features Specifications • Density: 512M bits • Organization ⎯ 8M words x 16 bits × 4 banks • Package: 66-pin plastic TSOP II ⎯ Lead-free (RoHS compliant)	Original	IS43R16320B IC43R16320B 66-pin DDR400: DDR333, 400Mbps/333Mbps/266Mbps IC43R16320B DDR333 DDR400 IC43R16320B-6TL	PDF
Untitled Abstract: No abstract text available Text: ISSI IS43R16160A1 16Meg x 16 256-MBIT DDR SDRAM PRELIMINARY INFORMATION MAY 2006 FEATURES DEVICE OVERVIEW • • ISSI’s 256-Mbit DDR SDRAM achieves high-speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 268,435,456-bit memory	Original	IS43R16160A1 16Meg 256-MBIT	PDF
TSOP-66 Abstract: DDR400 IS43R16800A1 Text: ISSI IS43R16800A1 8Meg x 16 128-MBIT DDR SDRAM PRELIMINARY INFORMATION APRIL 2006 FEATURES DEVICE OVERVIEW • • • • ISSI’s 128-Mbit DDR SDRAM achieves high-speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 134,217,728-bit memory	Original	IS43R16800A1 128-MBIT 728-bit 32M-bit 16-bit TSOP-66 DDR400 IS43R16800A1	PDF
a12ca Abstract: No abstract text available Text: 256Mb: 16 Meg x 16, 8 Meg x 32 Mobile DDR SDRAM Features Mobile Double Data Rate DDR SDRAM MT46H16M16LF – 4 Meg x 16 x 4 banks MT46H8M32LF/LG – 2 Meg x 32 x 4 banks Features • • • • • • • • • • • • • • • • • • •	Original	256Mb: MT46H16M16LF MT46H8M32LF/LG 09005aef82091978 09005aef8209195b MT46H16M16LF_ a12ca	PDF
mt46 Abstract: No abstract text available Text: Preliminary‡ 128Mb: 8 Meg x 16 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H8M16LF – 2 Meg x 16 x 4 Banks For the latest data sheet, refer to Micron’s Web site: www.micron.com/products/dram/mobile Features Figure 1: • VDD = 1.7–1.95V, VDDQ = 1.7–1.95V	Original	128Mb: MT46H8M16LF 09005aef822b7e27/Source: 09005aef822b7dd6 mt46	PDF
NT5TU32M16 Abstract: No abstract text available Text: DDR2 512Mb SDRAM Nanya Technology Corp. NT5TU64M8EE / NT5TU32M16EG NT5TU64M8EE / NT5TU32M16EG Commercial, Industrial and Automotive DDR2 512Mb SDRAM Features  JEDEC DDR2 Compliant  Data Integrity - Double-data rate on DQs, DQS, DM bus - Auto Refresh and Self Refresh Modes	Original	512Mb NT5TU64M8EE NT5TU32M16EG DDR2-800 NT5TU32M16EG-ACA NT5TU32M16EG-ACH. DDR2-800/1066 NT5TU32M16	PDF
ISSI 346 Abstract: DDR333 DDR400 IS43R16320A ISSI 605 ISSI 742 Text: ISSI IS43R16320A 32Meg x 16 512-MBIT DDR SDRAM NOVEMBER 2006 FEATURES DEVICE OVERVIEW • • ISSI’s 512-Mbit DDR SDRAM achieves high-speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 536,870,912-bit memory	Original	IS43R16320A 32Meg 512-MBIT 912-bit 128M-bit 16-bit ISSI 346 DDR333 DDR400 IS43R16320A ISSI 605 ISSI 742	PDF
Untitled Abstract: No abstract text available Text: 512Mb: x4, x8, x16 DDR SDRAM Features Double Data Rate DDR SDRAM MT46V128M4 – 32 Meg x 4 x 4 banks MT46V64M8 – 16 Meg x 8 x 4 banks MT46V32M16 – 8 Meg x 16 x 4 banks Features Options • VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V • VDD = +2.6V ±0.1V, VDDQ = +2.6V ±0.1V (DDR400)	Original	512Mb: MT46V128M4 MT46V64M8 MT46V32M16 DDR400) 09005aef80a1d9d4/Source: 09005aef80a1d9e7 512MBDDRx4x8x16	PDF
Untitled Abstract: No abstract text available Text: Advance‡ 256Mb: 16 Meg x 16, 8 Meg x 32 Mobile DDR SDRAM Features Mobile Double Data Rate DDR SDRAM MT46H16M16LF - 4 Meg x 16 x 4 banks MT46H8M32LF/LG - 2 Meg x 32 x 4 banks For the latest data sheet, refer to Micron's Web site: http:\\www.micron.com/mobile	Original	256Mb: MT46H16M16LF MT46H8M32LF/LG 09005aef82091978 09005aef8209195b	PDF
ELPIDA lpddr Abstract: 1GB-x16 samsung lpddr LPDDR2 SDRAM samsung MT46H64M16LF cross infineon power cycling Text: 1Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H64M16LF – 16 Meg x 16 x 4 banks MT46H32M32LF – 8 Meg x 32 x 4 banks Features Options • VDD/VDDQ – 1.8V/1.8V • Configuration – 64 Meg x 16 16 Meg x 16 x 4 banks – 32 Meg x 32 (8 Meg x 32 x 4 banks)	Original	MT46H64M16LF MT46H32M32LF 09005aef83d9bee4 ELPIDA lpddr 1GB-x16 samsung lpddr LPDDR2 SDRAM samsung MT46H64M16LF cross infineon power cycling	PDF
W631GU6KB12K Abstract: 41ti Text: W631GU6KB 8M x 8 BANKS × 16 BIT DDR3L SDRAM Table of Contents1. GENERAL DESCRIPTION . 5 2. FEATURES . 5	Original	W631GU6KB W631GU6KB12K 41ti	PDF
Untitled Abstract: No abstract text available Text: 512Mb: x4, x8, x16 DDR SDRAM Features Double Data Rate DDR SDRAM MT46V128M4 – 32 Meg x 4 x 4 banks MT46V64M8 – 16 Meg x 8 x 4 banks MT46V32M16 – 8 Meg x 16 x 4 banks For the latest data sheet, refer to Micron’s Web site: www.micron.com/ddrsdram Features	Original	512Mb: MT46V128M4 MT46V64M8 MT46V32M16 DDR400) 09005aef80a1d9e7 512MBDDRx4x8x16	PDF
Untitled Abstract: No abstract text available Text: W631GG8KB 16M x 8 BANKS × 8 BIT DDR3 SDRAM Table of Contents1. GENERAL DESCRIPTION . 5 2. FEATURES . 5	Original	W631GG8KB	PDF

1gbDDRx4x8x16 Abstract: No abstract text available Text: 1Gb: x4, x8, x16 DDR SDRAM Features Double Data Rate DDR SDRAM MT46V256M4 – 64 Meg x 4 x 4 banks MT46V128M8 – 32 Meg x 8 x 4 banks MT46V64M16 – 16 Meg x 16 x 4 banks For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/datasheets	Original	MT46V256M4 MT46V128M8 MT46V64M16 DDR400) 09005aef80a2f898/Source: 09005aef80a2f8ae 1gbDDRx4x8x16	PDF
L 3705 N Abstract: No abstract text available Text: 512Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H32M16LF – 8 Meg x 16 x 4 banks MT46H16M32LF/LG – 4 Meg x 32 x 4 banks Preliminary‡ For the latest data sheet, refer to Micron’s Web site: www.micron.com/mobile Features • • • •	Original	512Mb: MT46H32M16LF MT46H16M32LF/LG 09005aef81a16e9d/Source: 09005aef81a6c5f3 MT46H32M16LF L 3705 N	PDF
Untitled Abstract: No abstract text available Text: 4Gb DDR3 SDRAM C-Die NT5CB C 512M8CN / NT5CB(C)256M16CP Options Features  Differential clock input (CK, ) Speeds  Differential bidirectional data strobe  DDR3 - 2133 2,3  TDQS and /TDQS pair for X8  DDR3 - 1866 2,3  8n-bit prefetch architecture	Original	512M8CN 256M16CP P124-136 P92-123 P146-156 P137-143	PDF
ISSI 346 Abstract: DDR333 IS43R16320A Text: ISSI IS43R16320A 32Meg x 16 512-MBIT DDR SDRAM MARCH 2006 FEATURES DEVICE OVERVIEW • • ISSI’s 512-Mbit DDR SDRAM achieves high-speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 536,870,912-bit memory array is internally organized as four banks of 128M-bit to	Original	IS43R16320A 32Meg 512-MBIT 912-bit 128M-bit 16-bit ISSI 346 DDR333 IS43R16320A	PDF
Untitled Abstract: No abstract text available Text: 128Mb: x4, x8, x16 DDR SDRAM Features Double Data Rate DDR SDRAM MT46V32M4 – 8 Meg x 4 x 4 Banks MT46V16M8 – 4 Meg x 8 x 4 Banks MT46V8M16 – 2 Meg x 16 x 4 Banks Features Options • VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V • VDD = +2.6V ±0.1V, VDDQ = +2.6V ±0.1V (DDR 400)	Original	128Mb: MT46V32M4 MT46V16M8 MT46V8M16 09005aef816fd013/Source: 09005aef816ce127 128MBDDRx4x8x16D	PDF
Untitled Abstract: No abstract text available Text: 1Gb DDR3 SDRAM F-Die NT5CB C 128M8FN / NT5CB(C)64M16FP Options Features  Differential clock input (CK, ) Speeds  Differential bidirectional data strobe  DDR3 - 1866  TDQS and /TDQS pair for X8  DDR3/DDR3L/DDR3L RS - 1600 2,3 2,4  8n-bit prefetch architecture	Original	128M8FN 64M16FP P122-134 P144-154 P135-141	PDF
Untitled Abstract: No abstract text available Text: 128Mb: x4, x8, x16 DDR SDRAM Features Double Data Rate DDR SDRAM MT46V32M4 – 8 Meg x 4 x 4 Banks MT46V16M8 – 4 Meg x 8 x 4 Banks MT46V8M16 – 2 Meg x 16 x 4 Banks Features Options • VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V • VDD = +2.6V ±0.1V, VDDQ = +2.6V ±0.1V (DDR 400)	Original	128Mb: MT46V32M4 MT46V16M8 MT46V8M16 09005aef816fd013/Source: 09005aef816ce127 128MBDDRx4x8x16D	PDF
vectra LCP Abstract: tb 10 n 6 Text: Date 06/03/11 SYM B 06/10/11 C 06/30/11 D 02/24/12 E REVISION RECORD CHANGED PCB LAYOUT DIM. UPDATED SPECIFICATIONS ADDED DROP TEST RESULT ADDED OPTIONAL ADHESIVE NOTE TO PCB LAYOUT AUTH DR. CK. T.B. B.S. T.B. B.S. T.B. B.S. T.B. B.S. i 3.56 [0.14] i PCB LAYOUT	OCR Scan	E174096 C5191, CR2032 BHSD-2032-SM vectra LCP tb 10 n 6	PDF
CR2032 pcb Abstract: BATTERY CR2032 pcb Phosphor Bronze C5191 Text: Date 06/10/11 SYM A 08/19/11 B 02/24/12 C REVISION RECORD UPDATED SPECIFICATIONS UPDATED PCB LAYOUT ADDED OPTION ADHESIVE NOTE TO PCB LAYOUT AUTH DR. CK. T.B. B.S. T.B. B.S. T.B. B.S. O PTIO N AL PCB LAYOUT i 4.75 [0.19] i 5.08 [0.20] 26.92 [1.06] SPECIFICATIONS:	OCR Scan	E174096 C5191, 18bration CR2032 BHSD-2032-PC CR2032 pcb BATTERY CR2032 pcb Phosphor Bronze C5191	PDF
25 RIA 80M SCR Abstract: triac diac rectifier E10520 SCR 800V 50A ht 40 diac E1041 Text: PART NUMBER DEFINITION TRIAC & ALTERNISTOR LOGIC TRIAC 20 12 04 Special Options V= 4 00 0V Isolation T O -2 20 Pkg. Only L = LO G IC T R IA C 20 Voltage Rating Lead Form Dimensions 2 0 = 200V T Q -2 0 2 A B . (See Page 102) 4 0 = 400V T O -2 2 0 A B (See Page 105)	OCR Scan	PxxxxBA70 25 RIA 80M SCR triac diac rectifier E10520 SCR 800V 50A ht 40 diac E1041	PDF

CK-06 105 Search Results

CK-06 105 Price and Stock

KEMET Corporation CK06BX105K

KEMET Corporation C062K105K5X5CA7301

KEMET Corporation CK06BX105K7301

Kyocera AVX Components CK06BX105M

Kyocera AVX Components CK06BX105K

CK-06 105 Datasheets Context Search

ar9350

IC43R16320B

Untitled

TSOP-66

a12ca

mt46

NT5TU32M16

ISSI 346

Untitled

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ELPIDA lpddr

W631GU6KB12K

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1gbDDRx4x8x16

L 3705 N

Untitled

ISSI 346

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vectra LCP

CR2032 pcb

25 RIA 80M SCR