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    CK 78 SMD Search Results

    CK 78 SMD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLM15PX121BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 120ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX181SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 180ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM21HE802SN1L Murata Manufacturing Co Ltd FB SMD 0805inch 8000ohm NONAUTO Visit Murata Manufacturing Co Ltd
    BLM15PX330BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 33ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX600SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 60ohm POWRTRN Visit Murata Manufacturing Co Ltd

    CK 78 SMD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CXD2408R

    Abstract: ICX074AK ICX074AL
    Text: CXD2408R Timing Generator for Progressive Scan CCD Image Sensor Description The CXD2408R is an IC developed to generate the timing pulses required by the Progressive Scan CCD image sensors as well as signal processing circuits. Features • EIA support • Electronic shutter function


    Original     		PDF CXD2408R CXD2408R 1560fh 5454MHz) FP64PL01 FP064- 1010Q ICX074AK ICX074AL

    1M preset, horizontal

    Abstract: CXD2408R ICX074AK ICX074AL CXD2311AR
    Text: CXD2408R Timing Generator for Progressive Scan CCD Image Sensor For the availability of this product, please contact the sales office. Description The CXD2408R is an IC developed to generate the timing pulses required by the Progressive Scan CCD image sensors as well as signal processing


    Original     		PDF CXD2408R CXD2408R 1560fh 5454MHz) 1/60s 64PIN LQFP-64P-L01 LQFP064-P-1010 1M preset, horizontal ICX074AK ICX074AL CXD2311AR

    CXD2408R

    Abstract: ICX074AK ICX074AL
    Text: CXD2408R Timing Generator for Progressive Scan CCD Image Sensor Description The CXD2408R is an IC developed to generate the timing pulses required by the Progressive Scan CCD image sensors as well as signal processing circuits. Features • EIA support • Electronic shutter function


    Original     		PDF CXD2408R CXD2408R 1560fh 5454MHz) 1/60s 64PIN LQFP-64P-L01 LQFP064-P-1010 ICX074AK ICX074AL

    sony ccd cmos camera

    Abstract: CXD2408AR ICX074AK ICX074AL CXD2311AR
    Text: CXD2408AR Timing Generator for Progressive Scan CCD Image Sensor Description The CXD2408AR is an IC developed to generate the timing pulses required by the Progressive Scan CCD image sensors as well as signal processing circuits. Features • EIA support • Electronic shutter function


    Original     		PDF CXD2408AR CXD2408AR 1560fh 5454MHz) XD2408AR 64PIN LQFP-64P-L01 LQFP064-P-1010 42/COPPER sony ccd cmos camera ICX074AK ICX074AL CXD2311AR

    Untitled

    Abstract: No abstract text available
    Text: PD-94584J S-SERIES 28V Input, Single/Dual Output HYBRID-HIGH RELIABILITY RADIATION HARDENED LOW POWER DC-DC CONVERTER Description The S-Series of DC-DC converters are low power radiation hardened, high reliability devices designed for hostile radiation environments such as those


    Original     		PDF PD-94584J

    Untitled

    Abstract: No abstract text available
    Text: PD-94584H S-SERIES 28V Input, Single/Dual Output HYBRID-HIGH RELIABILITY RADIATION HARDENED LOW POWER DC-DC CONVERTER Description The S-Series of DC-DC converters are low power radiation hardened, high reliability devices designed for hostile radiation environments such as those


    Original     		PDF PD-94584H MIL-STD-975 MIL-STD-1547. 2520Junction

    5962-04239

    Abstract: S2805S/CK
    Text: PD-94584H S-SERIES 28V Input, Single/Dual Output HYBRID-HIGH RELIABILITY RADIATION HARDENED LOW POWER DC-DC CONVERTER Description The S-Series of DC-DC converters are low power radiation hardened, high reliability devices designed for hostile radiation environments such as those


    Original     		PDF PD-94584H MIL-STD-975 MIL-STD-1547. 2520Junction 5962-04239 S2805S/CK

    Untitled

    Abstract: No abstract text available
    Text: CERAMOS Lead Pb Free Product - RoHS Compliant LUW C9EN Released Besondere Merkmale • Gehäusetyp: SMD Keramik Gehäuse mit diffusem Silikonverguss • Typischer Lichtstrom: 78 lm bei 500 mA • Besonderheit des Bauteils: hocheffiziente Lichtquelle bei geringem Platzbedarf


    Original     		PDF 4000/Rolle, JESD22-A114-D D-93055

    Untitled

    Abstract: No abstract text available
    Text: CERAMOS Lead Pb Free Product - RoHS Compliant LUW C9EN Released Besondere Merkmale • Gehäusetyp: SMD Keramik Gehäuse mit diffusem Silikonverguss • Typischer Lichtstrom: 78 lm bei 500 mA • Besonderheit des Bauteils: hocheffiziente Lichtquelle bei geringem Platzbedarf


    Original     		PDF 4000/Rolle, JESD22-A114-D D-93055

    Untitled

    Abstract: No abstract text available
    Text: W3J512M72K-XPBX W3J512M72K-XLBX *ADVANCED 4GB – 512M x 72 DDR3 SDRAM 1.35V – 543 PBGA Multi-Chip Package FEATURES  Address/control terminations included  DDR3 Data Rate = 800, 1,066, 1333, 1600* Mb/s  Differential clock terminations included


    Original     		PDF W3J512M72K-XPBX W3J512M72K-XLBX 1600Mb/s W3J512M72K-XLBX

    Untitled

    Abstract: No abstract text available
    Text: CERAMOS Lead Pb Free Product - RoHS Compliant LUW C9EN Released Besondere Merkmale • Gehäusetyp: SMD Keramik Gehäuse mit diffusem Silikonverguss • Typischer Lichtstrom: 78 lm bei 500 mA • Besonderheit des Bauteils: hocheffiziente Lichtquelle bei geringem Platzbedarf


    Original     		PDF 4000/Rolle, JESD22-A114-D

    Untitled

    Abstract: No abstract text available
    Text: W3J512M72G-XPBX W3J512M72G-XLBX 4GB – 512M x 72 DDR3 SDRAM – 1.5V – 543 PBGA Multi-Chip Package FEATURES  Address/control terminations included  DDR3 Data Rate = 800, 1066, 1333, 1600* Mb/s  Differential clock terminations included


    Original     		PDF W3J512M72G-XPBX W3J512M72G-XLBX 1600Mb/s W3J512M72G-XLBX

    w3j128m72

    Abstract: w3j512m72
    Text: W3J512M72G-XPBX W3J512M72G-XLBX 4GB – 512M x 72 DDR3 SDRAM – 1.5V – 543 PBGA Multi-Chip Package FEATURES  Address/control terminations included  DDR3 Data Rate = 800, 1066, 1333, 1600* Mb/s  Differential clock terminations included


    Original     		PDF W3J512M72G-XPBX W3J512M72G-XLBX 1600Mb/s w3j128m72 w3j512m72

    Untitled

    Abstract: No abstract text available
    Text: F5B Capacitor / Diode unit metallized POLYester film CAPACITOR with Integrated bidirectional suppressor diode High performance peak reduction Typical applications: these component units are used to strongly reduce transient phenomena and act as EMI-RFI suppressors for automotive motors and other suppression


    Original     		PDF 20x10-4 1x10-9

    MT41K256M32

    Abstract: FBGA DDR3 x32 MT41K256M3 MT41K256M16
    Text: Preliminary‡ 8Gb: x32 TwinDie DDR3L SDRAM Description TwinDie 1.35V DDR3L SDRAM MT41K256M32 – 32 Meg x 32 x 8 Banks Description Options Marking • Configuration – 32 Meg x 32 x 8 banks • FBGA package Pb-free – 136-ball FBGA (11mm x 14mm x 1.2mm) Rev. D


    Original     		PDF MT41K256M32 MT41K256M16 MT41K256M32. 136-ball DDR3L-1600) DDR3L-1333) DDR3L-1066) SAC305 09005aef84ad0652 MT41K256M32 FBGA DDR3 x32 MT41K256M3

    MT41K256M32

    Abstract: MT41K256M3 8Gb DDR3 SDRAM twindie MT41K256M16
    Text: 8Gb: x32 TwinDie DDR3L SDRAM Description TwinDie 1.35V DDR3L SDRAM MT41K256M32 – 32 Meg x 32 x 8 Banks Description Options Marking • Configuration – 32 Meg x 32 x 8 banks • FBGA package Pb-free – 136-ball FBGA (11mm x 14mm x 1.2mm) Rev. D – 136-ball FBGA


    Original     		PDF MT41K256M32 MT41K256M16 MT41K256M32. 136-ball DDR3L-1600) DDR3L-1333) DDR3L-1066) 09005aef84ad0652 MT41K256M32 MT41K256M3 8Gb DDR3 SDRAM twindie

    capacitor 0.1 k 100 MKT

    Abstract: No abstract text available
    Text: F5B Capacitor / Diode unit metallized POLYester film CAPACITOR with Integrated bidirectional suppressor diode High performance peak reduction Typical applications: these component units are used to strongly reduce transient phenomena and act as EMI-RFI suppressors for automotive motors and other suppression


    Original     		PDF 20x10-4 1x10-9 capacitor 0.1 k 100 MKT

    IEC60063

    Abstract: capacitor mkt 100nf
    Text: F5B Capacitor / Diode unit METALLIZED POLYESTER FILM CAPACITOR WITH INTEGRATED BIDIRECTIONAL SUPPRESSOR DIODE HIGH PERFORMANCE PEAK REDUCTION Typical applications: these component units are used to strongly reduce transient phenomena and act as EMI-RFI suppressors for automotive motors and other suppression


    Original     		PDF 1x10-9 20x10-4 IEC60063 capacitor mkt 100nf

    capacitor 100nf 63v MKT

    Abstract: smd code marking CK suppressor diode smd CK 78 smd varistor ck 100nF 63V polyester capacitor capacitor mkt 100nf
    Text: F5B Capacitor / Diode unit metallized POLYester film CAPACITOR with Integrated bidirectional suppressor diode High performance peak reduction Typical applications: these component units are used to strongly reduce transient phenomena and act as EMI-RFI suppressors for automotive motors and other suppression


    Original     		PDF 20x10-4 1x10-9 capacitor 100nf 63v MKT smd code marking CK suppressor diode smd CK 78 smd varistor ck 100nF 63V polyester capacitor capacitor mkt 100nf

    FBGA DDR3 x32

    Abstract: MT41K256M32 MT41K256M16 MT41K256M3 MICRON fBGA package code
    Text: Preliminary‡ 8Gb: x32 TwinDie DDR3L SDRAM Description TwinDie 1.35V DDR3L SDRAM MT41K256M32 – 32 Meg x 32 x 8 Banks Description Options Marking • Configuration – 32 Meg x 32 x 8 banks • FBGA package Pb-free – 136-ball FBGA (11mm x 14mm x 1.2mm) Rev. D


    Original     		PDF MT41K256M32 MT41K256M16 MT41K256M32. 136-ball DDR3L-1600) DDR3L-1333) DDR3L-1066) SAC305 09005aef84ad0652 FBGA DDR3 x32 MT41K256M32 MT41K256M3 MICRON fBGA package code

    Untitled

    Abstract: No abstract text available
    Text: SMD 4MM SQUARE / SINGLE-TURN CERMET / 5-TURN SEALED • Elastom er seal allow s m ultiple adjustm ents while m aintaining environm ental protection ■ R ecom m ended for reflow and w ave solder processing ■ Cross-slot rotor design suitable for autom atic adjustm ent equipm ent


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Components Datasheet status Product specification date of issue April 1991 B D S201/203/77 NPN silicon epitaxial base power transistors DESCRIPTION PINNING-SOT223 PIN NPN silicon epitaxial base transistors DESCRIPTION in a miniature SMD envelope 1


    OCR Scan     		PDF S201/203/77 PINNING-SOT223 OT223) BDS202/204/78. BDS201/203/77 bfci53T31 OT223.

    Untitled

    Abstract: No abstract text available
    Text: For technical assistance call the Multifuser Products number on the back cover. > Features Applications • 4.5mm SMD ■ Fast tripping resettable circuit protection ■ Surface mount packaging for automated assembly ■ Reduced component size and resistance


    OCR Scan     		PDF F-MSM020 F-MSMC035 MF-MSMC050 F-MSM050 MF-MSMC075 F-MSM075 23Leaded 02C-110 MF-MSMC035 MF-MSMC050.

    Untitled

    Abstract: No abstract text available
    Text: Lattica ispLSI and pLS/0 1048C ;Semiconductor I Corporation High-Density Programmable Logic Features Functional Block Diagram HIGH-DENSITY PROGRAMMABLE LOGIC — 8000 PLD Gates — 96 I/O Pins, 12 Dedicated Inputs, 2 Global Output Enables — 288 Registers


    OCR Scan     		PDF 1048C 041A-48C-isp