CJL8810 Search Results
CJL8810 Datasheets Context Search
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate MOSFETS CJL8810 SOT-23-6L Dual N-Channel MOSFET DESCRIPTION The CJL8810 uses advanced trench technology to provide excellent RDS ON and low gate charge. It is ESD protected. This device is suitable |
Original |
OT-23-6L CJL8810 OT-23-6L CJL8810 250uA | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate MOSFETS CJL8810 Dual N-Channel Enhancement Mode Field Effect Transistor DESCRIPTION The CJL8810 use advanced trench technology to provide excellent RDS ON and low gate charge. It is ESD protected. This device is suitable |
Original |
OT-23-6L CJL8810 CJL8810 OT-23-6L 250uA |