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    CJ SOT 89 Search Results

    CJ SOT 89 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    CJ SOT 89 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mark 642 sot 363

    Abstract: mark 642 sot 6 EN6100-4 SC-75 mark tw sot323 mark us sot-563
    Text: ESDA6V1-5P6 5-Line TVS Array Power Dissipation 150m Watts Reverse Working Voltage 6.1 VOLTS P b Lead Pb -Free Features: * Monolithic Structure * Low Clamping Voltage * IEC Compatibility(EN6100-4) 61000-4-2(ESD): Air–15kV, Contact-8kV * MIL STD 883E-Method 3015-7: class 3


    Original     		PDF EN6100-4) 883E-Method OT-563 OT-563 02-Apr-09 150mm 200mm 200mm mark 642 sot 363 mark 642 sot 6 EN6100-4 SC-75 mark tw sot323 mark us sot-563

    eft 317 transistor

    Abstract: NUP4201 NUP4201DR2 STF202 MUN5212 13926 SMDA05-6R2 DARLINGTON TRANSISTOR ARRAY
    Text: BRD8020/D Rev. 1, May-2002 MicroIntegration The Next Step in Simplicity and Miniaturization ON Semiconductor MicroIntegrationE The Next Step in Simplicity and Miniaturization BRD8020/D Rev. 1, May–2002  SCILLC, 2002 Previous Edition  2001 “All Rights Reserved”


    Original     		PDF BRD8020/D May-2002 r14525 eft 317 transistor NUP4201 NUP4201DR2 STF202 MUN5212 13926 SMDA05-6R2 DARLINGTON TRANSISTOR ARRAY

    Untitled

    Abstract: No abstract text available
    Text: $ ฀ C ฀"9@/;%;+8<3<=9; ";9.>-=฀$>77+;B 6KGYZWKX R฀F2=฀ 492?6=฀?@C>2=฀=6G6= R฀I46=6?E฀82E6฀492C86฀I฀' 9I"\[#฀AC@5F4E฀ ' ) 9I )( K ' 9I"\[#$ZNe /- Z $9 )+ 6 R฀&@H฀@? C6D:DE2?46฀' 9I"\[# R฀*3 7C66฀=625฀A=2E:?8฀,@"-฀4@>A=:2?E


    Original     		PDF 492C86à E2C86Eà E6DE65 E96CH

    Untitled

    Abstract: No abstract text available
    Text:  $  "%&$!"#C " 9@ /;% ;+8<3<=9;   " ;9.>-=$ >7 7 +;B 6KGYZWKX R  F2 = 492 ? ? 6=  ? @C> 2 = 6G6= R  I46= = 6? E82 E6 492 C86 I' 9I"\[# AC@5F4E '  ) 9I )( K ' 9I"\[#$ZNe /- Z" $9 )+ 6 R& @H @? C6D:DE2 ? 46 ' 9I"\[# R * 3 7C66 = 62 5 A= 2 E:? 8 , @" - 4@> A=


    Original     		PDF 8976BF6?

    STP4119

    Abstract: Full-bridge SG3525 APPLICATION NOTES sg3525 application note mc34063 step up with mosfet mc34063 step down with mosfet Full-bridge SG3525 sg3525 pwm INVERTER MJ2955 300 watts amplifier circuit diagram MT3336 sg3535a
    Text: ON Semiconductor Master Components Selector Guide Power Management, Amplifiers and Comparators, Analog Switches, Thyristors, Diodes, Rectifiers, Bipolar Transistors, FETs, Circuit Protection, Clock and Data Management, Interface, and Standard Logic Devices


    Original     		PDF SG388/D May-2007 STP4119 Full-bridge SG3525 APPLICATION NOTES sg3525 application note mc34063 step up with mosfet mc34063 step down with mosfet Full-bridge SG3525 sg3525 pwm INVERTER MJ2955 300 watts amplifier circuit diagram MT3336 sg3535a

    2x062h

    Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062
    Text: Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 目 录 CONTENT 开关二极管 SWITCHING DIODES. 1 1. SOD–923 Surface Mount Switching Diodes. 1


    Original     		PDF ZMM22 ZMM24 ZMM27 ZMM43 ZMM47 2x062h gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062

    2N6284 inverter schematic diagram

    Abstract: NTD18N06 MKP9V160 sine wave inverter tl494 circuit diagram ECL IC NAND adp3121 DARLINGTON TRANSISTOR ARRAY ezairo MC74HC4538 TIP142 6403 F
    Text: ON Semiconductor Master Components Selector Guide AC−DC Controllers and Regulators; Amplifiers and Comparators; Analog Switches; Bipolar Transistors; Clock and Data Distribution; Clock Generation; Custom; DC−DC Controllers, Converters, and Regulators; Digital


    Original     		PDF SG388/D 2N6284 inverter schematic diagram NTD18N06 MKP9V160 sine wave inverter tl494 circuit diagram ECL IC NAND adp3121 DARLINGTON TRANSISTOR ARRAY ezairo MC74HC4538 TIP142 6403 F

    Motorola transistor smd marking codes

    Abstract: SMD TRANSISTOR MARKING 5c SMD code smd TRANSISTOR code marking 2F toshiba smd marking code transistor TRANSISTOR SMD MARKING CODE 1P smd transistor 5c Diode SOT-23 marking 15d SMD TRANSISTOR MARKING 6B TRANSISTOR SMD MARKING CODE 1d
    Text: Eugene Turuta 2 - pins SOT - 89 databook 3 - pins Acti ve Activ SMD components mar king codes marking Introduction SMD-codes for semiconductor components in 3-pins cases SMD-codes for semiconductor components in SOT-89 cases SMD-codes for semiconductor components in BGA and LPP cases


    Original     		PDF OT-89 OT-223 C-120, 2001MD, Motorola transistor smd marking codes SMD TRANSISTOR MARKING 5c SMD code smd TRANSISTOR code marking 2F toshiba smd marking code transistor TRANSISTOR SMD MARKING CODE 1P smd transistor 5c Diode SOT-23 marking 15d SMD TRANSISTOR MARKING 6B TRANSISTOR SMD MARKING CODE 1d

    heds 5310

    Abstract: VC 5022-2 p605 mosfet HEDS 6310 encoder heds 6310 acsl 086 s SMD MOSFET DRIVE 4606 Alps GMR sensor transistor 5503 dm logitech x 530
    Text: Avago Technologies www.avagotech.com AVAGO TECHNOLOGIES EBV Elektronik GmbH & Co. KG www.ebv.com Оптоэлектронные и СВЧ компоненты «Аваго Текнолоджиз» АПРЕЛЬ ОПТОЭЛЕКТРОННЫЕ И СВЧ КОМПОНЕНТЫ «АВАГО ТЕКНОЛОДЖИЗ»


    Original     		PDF

    al 60 dv 2425

    Abstract: No abstract text available
    Text: hSE B PHILIPS INTERNATIONAL • 711GÖSb DGbSSMT 7 7 CJ H P H I N BT136F SERIES FULL-PACK TRIACS Glass-passivated 4 ampere triacs in SOT-186 envelopes, which feature an electrically isolated m ounting base. They are intended fo r use in applications requiring high bidirectional transient and blocking


    OCR Scan     		PDF BT136F OT-186 BT136F--500 D8573 al 60 dv 2425

    Untitled

    Abstract: No abstract text available
    Text: ¡eluom Semiconductor, Inc. TC1034 TC1035 LINEAR BUILDING B LO C K -S IN G LE OPERATIONAL AMPLIFIERS IN SOT PACKAGES FEATURES GENERAL DESCRIPTION • ■ ■ ■ The TC1034/1035 are single CMOS operational ampli­ fiers for low-power applications. They have a typical operating supply current of 6 ji A,


    OCR Scan     		PDF TC1034 TC1035 OT-23A TC1035) TC1034/1035 D-82152

    PJ 0349

    Abstract: CD 888 CB pj 0266 iv PJ 0399 pj 1126 1V nt 9989 pj 1126 SIC SOT343 IC HS 8108 pj 0159
    Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE686 SERIES FEATURES HIGH GAIN BANDW IDTH PRO DUCT: fT o f 15 G H z LOW VO LTAG E/LO W CU R R EN T OPERATION HIGH INSERTION POW ER GAIN: |S 21 E|2 = 12 dB @ 2 V , 7 m A , 2 G H z |S 2 1 E |2 = 11 d B @ 1 V, 5 mA, 2 G H z


    OCR Scan     		PDF NE686 OT-143) NE68618-T1 NE68619-T1 NE68630-T1 NE68633-T1 NE68639-T1 NE68639R-T1 PJ 0349 CD 888 CB pj 0266 iv PJ 0399 pj 1126 1V nt 9989 pj 1126 SIC SOT343 IC HS 8108 pj 0159

    JRC 45800

    Abstract: 0620 jrc jrc 13600 jtp sot 143 JRC 6005 4560 d JRC jrc 0620 4560 JRC JRC 76600 transistor 2sc 5586
    Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE687 SERIES FEATURES . L O W N O IS E : 1.3 dB A T 2 .0 G H z • L O W V O L T A G E O P E R A T IO N • EASY T O M ATCH • H IG H G A IN B A N D W ID T H P R O D U C T : f ï o f 13 G H z • A V A IL A B L E IN S IX L O W C O S T P L A S T IC S U R F A C E


    OCR Scan     		PDF NE687 OT-143} NE68718-T1 NE68719-T1 NE68730-T1 NE68733-T1 NE68739-T1 NE68739R-T1 JRC 45800 0620 jrc jrc 13600 jtp sot 143 JRC 6005 4560 d JRC jrc 0620 4560 JRC JRC 76600 transistor 2sc 5586

    169800

    Abstract: 80500 TRANSISTOR D 5036 cd 4599 4463 B 80500 bb
    Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE687 SERIES FEATURES • LOW NOISE: 1.3 dB AT 2.0 GHz • LOW VOLTAGE OPERATION • EASY TO MATCH • HIGH GAIN BANDWIDTH PRODUCT: fTof 13 GHz 18 SOT 343 STYLE 19 (3 PIN ULTRA SU PER MINI MOLD) 30 (SOT 323 STYLE)


    OCR Scan     		PDF NE687 OT-143) NE68718-T1 NE68719-T1 NE68730-T1 NE68733-T1 NE68739-T1 NE68739R-T1 169800 80500 TRANSISTOR D 5036 cd 4599 4463 B 80500 bb

    2SD369

    Abstract: IC 200 UDR 005 2SD369-Y 100W AUDIO ic AMPLIFIER 251C 2SD369-0 Sink15 2SD369O
    Text: 2SD SILICON NPN DIFFUSED JUNCTION TRANSISTOR I il I f ffl o ±n,t> * 4 o D C - D C V >'< - * m o INDUSTRIAL APPLICATIONS Unit in m m - * m A u dio 369 Itower A m p l i f i e r , Power S w i t c h i n g DC-DC C o n v e r t e r and R e g u l a t o r A p p l i c a t i o n s .


    OCR Scan     		PDF 2sd369 AC73tttffl 300X300X2mm 100X100X2mm 2SD369 IC 200 UDR 005 2SD369-Y 100W AUDIO ic AMPLIFIER 251C 2SD369-0 Sink15 2SD369O

    smd transistor marking A3

    Abstract: telefunken ha 880 telefunken ha 800 "59 R" mosmic 945 mosmic S595T S595TR A3 smd sot-143 telefunken ha 750 m
    Text: T em ic S595T/S595TR S e m i c o n d u c t o r s MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage M OSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. M Applications V dD Low noise gain controlled input stages in UHF- and VHFtuner with 5 V supply voltage.


    OCR Scan     		PDF s595t/s595tr S595T S959TR D-74025 26-Mar-97 smd transistor marking A3 telefunken ha 880 telefunken ha 800 "59 R" mosmic 945 mosmic S595TR A3 smd sot-143 telefunken ha 750 m

    ic HS 2272

    Abstract: tg 56700 SR 13009 transistor sr 13009 transistor d 13009 IC tt 3034 0732 8m80 D 13009 K gi 9405
    Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE685 SERIES FEATURES • LOW COST • SMALL AND ULTRA SMALL SIZE PACKAGES . LOW VOLTAGE/LOW CURRENT OPERATION . HIGH GAIN BANDWIDTH PRODUCT: fT of 12 GHz • NOISE FIGURES OF 1.5 dB AT 2.0 GHZ 18 SOT 343 STYLE


    OCR Scan     		PDF NE685 NEG85 OT-143) NE68518-T1 NE68519-T1 NE68530-T1 NE68533-T1 NE68539-T1 NE68539R-T1 ic HS 2272 tg 56700 SR 13009 transistor sr 13009 transistor d 13009 IC tt 3034 0732 8m80 D 13009 K gi 9405

    diode S6 78A

    Abstract: TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor
    Text: SIEM EN S Selection Guide RF-Transistors and MMICs MOS Field-Effect Dual-Gate GaAs FETs. 14


    OCR Scan     		PDF O-92tl O-92d diode S6 78A TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor

    Vo 80500 TRANSISTOR

    Abstract: ST 80500 ap 4606 ST 80500 transistor q 1257 transistor IR 9342 2110 transistor NE68819 SOT143 L03 0828 30400
    Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE688 SERIES FEATURES_ • LOW PHASE NOISE DISTORTIO N • LOW NOISE: 1 .5 dB at 2 .0 G H z • LOW VO LTAG E OPERATION • LARGE ABSOLUTE M AXIM UM CO LLEC TO R CU RREN T: Ic M A X = 1 0 0 m A


    OCR Scan     		PDF NE688 OT-143) PACKAGEOUTUNE39R NE68818-T1 NE68819-T1 NE68830-T1 NE68833-T1 NE68839-T1 NE68839R-T1 Vo 80500 TRANSISTOR ST 80500 ap 4606 ST 80500 transistor q 1257 transistor IR 9342 2110 transistor NE68819 SOT143 L03 0828 30400

    transistor TT 3043

    Abstract: IJEAD
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: h = 8 GHz • LOW NOISE FIGURE: 1.2dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB AT 2 GHz • LOW COST 00 CHIP


    OCR Scan     		PDF NE681 b4E752S D0hSb73 transistor TT 3043 IJEAD

    2SC1424

    Abstract: s2l sot23
    Text: NPN SILICON GENERAL PURPOSE TRANSISTOR NE734 SERIES FEATURES • LOW NOISE FIG UR E: < 3 dB at 500 MHz • HIGH G A IN : 15 dB at 500 MHz B • HIGH G AIN BAN D W ID TH PR O D U C T: 2 GHz 3 GHz for the NE73435 • S M A LL C O LLEC TO R C A P A C IT A N C E : 1 pF


    OCR Scan     		PDF NE73435) NE734 OT-23) PACKAGEOUTUNE33 PACKAGEOUTUNE39 OT-143) PACKAGEOUTUNE39 2SC1424 s2l sot23

    transistor bf 422 NPN

    Abstract: BFR521 MSB037 NPN transistor mhz s-parameter transistor SOT103 SOT-103
    Text: Product specification Philips Semiconductors NPN 9 GHz wideband transistor BFR521 FEATURES DESCRIPTION • High power gain Silicon NPN planar epitaxial transistor in a plastic, 4-lead dual emitter SOT1Q3 package. • Low noise figure • High transition frequency


    OCR Scan     		PDF BFR521 OT103 MSB037 OT103. 7110A2b transistor bf 422 NPN BFR521 MSB037 NPN transistor mhz s-parameter transistor SOT103 SOT-103

    p87c528efaa

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification CMOS single-chip 8-bit microcontroller 87C528 PIN CONFIGURATIONS 4p| V dd T2/P1.o [ T DESCRIPTION T2EX7P1.i [ T 39] PO.O/ADO P 1 .2 | T 3 Ì] P0.1/AD1 P 1 .3 [ T 1 P 1 .4 [ T 36] P0.3/AD3 P 1 .5 [6 35] P0.4/AD4


    OCR Scan     		PDF 87C528 87C528 80C51 80C51. 83C528--32k 80C528-- 83C528 87C528--32k p87c528efaa

    cd 1691 cp

    Abstract: cp 8888 sj 6344 cP8888 nt 9989 1691 AI bt 67600
    Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE686 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: fT of 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: |S21E|2 = 12 dB @ 2 V, 7 mA, 2 GHz |S21E|Z = 11 dB @ 1 V, 5 mA, 2 GHz


    OCR Scan     		PDF NE686 OT-143) NE68618-T1 NE68619-T1 NE68630-T1 NE68633-T1 NE68639-T1 cd 1691 cp cp 8888 sj 6344 cP8888 nt 9989 1691 AI bt 67600