Untitled
Abstract: No abstract text available
Text: MSS40,000 Series Medium Barrier Silicon Schottky Diodes Description Features The Aeroflex / Metelics MSS40,000 Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum
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MSS40
MIL-PRF-19500
MIL-PRF-38534
A17026
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smmd-840
Abstract: MMD-810 MMD832-0805-2 SMMD837-SOD323 MMDB30-0402 MMD-835
Text: Silicon Step Recovery Diodes Description Features The diodes feature fully passivated, true mesa construction for sharp transitions and improved stability. The beam lead SRDs have the industry’s fastest transition times for millimeter wave multiplication and picosecond pulse forming.
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MIL-PRF-19500
MIL-PRF-38534
smmd-840
MMD-810
MMD832-0805-2
SMMD837-SOD323
MMDB30-0402
MMD-835
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MMD0840
Abstract: MMD810-T86 MMDB30-B11 mmdb30-0402 MMDB30-E28 MMD820-0805-2 SMMD-840 MMD820-E28 SMMD840-SOD323 MMD805-0805-2
Text: Silicon Step Recovery Diodes Description Features The diodes feature fully passivated, true mesa construction for sharp transitions and improved stability. The beam lead SRDs have the industry’s fastest transition times for millimeter wave multiplication and picosecond pulse forming.
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MIL-PRF-19500
MIL-PRF-38534
MMD0840
MMD810-T86
MMDB30-B11
mmdb30-0402
MMDB30-E28
MMD820-0805-2
SMMD-840
MMD820-E28
SMMD840-SOD323
MMD805-0805-2
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TMS4464
Abstract: TMS 2764 Texas Instruments IC mk4564 mcm6256 tms4500a Fuji Electric tv schematic diagram ET 439 power module fuji mcm6665 74L5138 TMS4500
Text: SMYOOO2 . ,MOS Memory Data Book 1984 II I III \' h' \/ Commercial and Military , :\ Specifications ' 1'/ ! . .Jf TEXAS INSTRUMENTS Alphanumeric Index, Table of Contents, Selection Guide Interchangeability Guide _ Glossary/Timing Conventions/Data Sheet Structure
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SMYD002
o184-464PP-142M
iS-146
TMS4464
TMS 2764 Texas Instruments IC
mk4564
mcm6256
tms4500a
Fuji Electric tv schematic diagram
ET 439 power module fuji
mcm6665
74L5138
TMS4500
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MSPD2018
Abstract: m21 sot23 transistor MSPD1012-H50 MSPD1000-E50/E50SM mpn7620-et47 MSPD1012-E50 mpn7610 mbd1057 MMD0840 MPN7345
Text: Microwave Diodes Schottky Varactor PIN Step Recovery Planar Tunnel MOS / MIS Capacitors Short Form Catalog 2006 About Aeroflex / Metelics The Experience and Resources to Deliver the Technological Edge In many electronics applications, there is simply no margin for
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A17084
MSPD2018
m21 sot23 transistor
MSPD1012-H50
MSPD1000-E50/E50SM
mpn7620-et47
MSPD1012-E50
mpn7610
mbd1057
MMD0840
MPN7345
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Untitled
Abstract: No abstract text available
Text: 74AHC1G17; 74AHCT1G17 Single Schmitt trigger buffer Rev. 1 — 18 March 2014 Product data sheet 1. General description The 74AHC1G17 and 74AHCT1G17 are single buffers with Schmitt-trigger inputs. Inputs are overvoltage tolerant. This feature allows the use of these devices as translators in
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74AHC1G17;
74AHCT1G17
74AHC1G17
74AHCT1G17
JESD22-A114E:
JESD22-A115-A:
JESD22-C101C:
AHCT1G17
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Texas Instruments TTL
Abstract: texas instruments 74LS612 TMS4500 sn74als966 sunny SCO 020 IC PAL 006A tms4500a SN74AS888 A61686 74ls610
Text: SDVD001 .LSI Logic Data Book 1986 ~ TEXAS INSTRUMENTS General Information LSI Devices Application Reports Mechanical Data LSI Logic Data Book TEXAS INSTRUMENTS IMPORTANT NOTICE Texas Instruments Til reserves the right to make changes in the devices or the device specifications identified in this publication
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SDVD001
11----I
11M/S
SDV011DV600R
Texas Instruments TTL
texas instruments 74LS612
TMS4500
sn74als966
sunny SCO 020
IC PAL 006A
tms4500a
SN74AS888
A61686
74ls610
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MSV34,060-0805-2
Abstract: MSV34000 064-E28 092-H20 SMTD3001 082-E28 092-E28 MSV34,064-E28
Text: 30 V Silicon Varactor Diodes MSV34,000, SMTD & SMTV Series Description Features The work horse of varactors these diodes are built tough with fully passivated mesa construction and Aeroflex / Metelics trimetallization. Featuring a nominal gamma of 0.46 these diodes
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MSV34
MIL-PRF-19500
MIL-PRF-35834
OD323,
MSV34,060-0805-2
MSV34000
064-E28
092-H20
SMTD3001
082-E28
092-E28
MSV34,064-E28
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MSPD2018
Abstract: MZBD-9161 ZENER 15B1 msd700 package inductance MSPD2018-H50 B20 zener diode glass MPN7320 MZBD9161 MLP7121 15B1 zener diode
Text: Aeroflex / Metelics, Inc. Microwave Diodes & Passive Semiconductor Devices Microwave Diodes & Passive Semiconductor Devices Aeroflex / Metelics, Inc. Aeroflex / Metelics, Inc. East Coast Operations 54 Grenier Field Road, Londonderry, NH 03053 Tel: 603 641-3800
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foc17091
MSPD2018
MZBD-9161
ZENER 15B1
msd700 package inductance
MSPD2018-H50
B20 zener diode glass
MPN7320
MZBD9161
MLP7121
15B1 zener diode
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SAS SFF-8087
Abstract: SAS SFF-8086 SAS SFF-8484 SFF8484 pinout SFF-8484 cj cl a17 IPASS SAS SFF-8086 SFF-8087 SFF-8643 pinout
Text: 10 I MATERIAL 79576-5000 79576-5001 79576-5002 79576-5003 79576-5004 79576-9000 79576-9001 79576-9002 79576-9003 79576-9004 79576-5020 79576-5021 79576-5022 79576-5023 79576-5024 APPS I PASS ON BP I PASS ON BP I PASS ON BP I PASS ON BP I PASS ON BP I PASS ON CTRL
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SD-79576-500
SAS SFF-8087
SAS SFF-8086
SAS SFF-8484
SFF8484 pinout
SFF-8484
cj cl a17
IPASS SAS
SFF-8086
SFF-8087
SFF-8643 pinout
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TC 9260 P
Abstract: 64k X 8 30-pin SIMM
Text: CYM9260 CYM9261B CYM9262A CYM9263 64K x72SR A M 128Kx 72 SRAM 256K x 72 SRAM 512K x 72 SRAM Features • Operates at 66 MHz • Uses 64K x 1 8 ,128K x 18, or 256K x 18 high perfor mance synchronous SRAMs • 168-position Angled DIMM from Amp p/n 179508-2
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CYM9260
CYM9261B
CYM9262A
CYM9263
x72SR
128Kx
168-position
CYM9260,
CYM9262,
CYM9263
TC 9260 P
64k X 8 30-pin SIMM
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ACC Microelectronics Corporation
Abstract: MCS200 A2028 MOTOROLA MCS2000 "ACC Microelectronics" g245 MD666 A20286 D245
Text: Order this data sheet by MCS2220/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information PC/AT Integrated Data & Address Buffer The MCS2220 and MCS2220A are basically one high performance buffer chip running in two different modes. The MCS2220 is a buffer chip running in
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MCS2220/D
MCS2220
MCS2220A
MCS2220)
MCS2220A)
16-Bit
MK145BP,
A23864
ACC Microelectronics Corporation
MCS200
A2028
MOTOROLA MCS2000
"ACC Microelectronics"
g245
MD666
A20286
D245
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Untitled
Abstract: No abstract text available
Text: HN62415 Series Preliminary 4M 256K x 16-bit and (512K x 8-bit) Mask ROM • DESCRIPTION The Hitachi HN62415 Series is a 4-Megabit CMOS Mask Programmable Read Only Memory organized as 262,144 x 16-bit and 524,288 x 8-bit. The low power consumption of this device makes it ideal for
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HN62415
16-bit)
16-bit
40-pin
40lead
44-lead
48-lead
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Untitled
Abstract: No abstract text available
Text: TLC545C, TLC545I, TLC546C, TLC546I 8-BIT ANALOG-TO-DIGITAL CONVERTERS WITH SERIAL CONTROL AND 19 INPUTS S LA S 066B - DECEMBER 1985 - REVISED OCTOBER 1996 8-Bit Re so lu ti on A/D C o n v e r t e r N or DW P A C K A G E TOP V IE W M icro p ro cesso r Peripheral or Stand-Alone
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TLC545C,
TLC545I,
TLC546C,
TLC546I
20-Channel
TLS46
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marking E47
Abstract: cj cl a17 E43 marking C67-C70 SD-85801-018
Text: B A B 10 11 12 13 14 15 16 4 5 6 7 8 9 VI EW 0 M MA ING SID 17 18 19 20 21 22 23 24 25 26 27 28 29 O m 2 3 ROW 1 E B D C B 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 B B B B B B B B B B B B B B B B B B B B B B B B B B B B B B B B B B B
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A73/A78/B73/C73/D73/E73
A1/A3/A5/A7/A9/A11/A13/A15/A17/
A19/A21/A23/A25/A27/A29/A31/A33/
A35/A37/A
51/A53/A55/A57/A59/A61/A63/A65/
A67-A70/A74-A76/B74-B78/
C1/C3/C5/C7/C9/C11/C13/C15/C1PROJECTION
SD-85801-
marking E47
cj cl a17
E43 marking
C67-C70
SD-85801-018
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2A153
Abstract: cj cl a17
Text: ^ jw * SCS-THOMSON M 28F201A M 28V201A iMH g[si(ô [gfug(gir[si(cj)iin(Sg CMOS 2 Megabit (256K x 8, Chip Erase) FLASH MEMORY ABBREVIATED DATA • MEMORY CHIP ERASE ■ SUPPLY VOLTAGE in READ OPERATION - 5V ± 10% for M28F201A version - 3.3V ± 0.3V for M28V201A version
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28F201A
28V201A
M28F201A
M28V201A
M28V201A
30jiA
150ns
2A153
cj cl a17
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MB838200B
Abstract: mb838200 AL4A mb83
Text: April 1993 Edition 2.0 FUJITSU DATA SHEET MB838200B/BL CMOS 8M-BIT MASK READ ONLY MEMORY 512K x 16 1M x 8 CMOS MASK READ ONLY MEMORY The Fujitsu M B838200B/BL is a CMOS Si-gate mask-programmable static read only memory organized as 524,288 words by 16 bits or 1,048,576 words by 8 bits.
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MB838200B/BL
B838200B/BL
MB838200BLcan
MB838200B/BL
0bl45
MB838200B
mb838200
AL4A
mb83
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80pin simm
Abstract: SMART Modular Technologies SM832C512P-12 SM832C512P-15
Text: JUL 1 5 1993 SM832C512P 2MByte 512K x 32 PROM Module General Description Features The SM832C512P is a high performance, 2Mbyte PROM memory module organized as 512K words by 32 bits, in a 80-pin SIMM (single-in-line memory module) package. • High Density : 2Mbyte
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SM832C512P
SM832C512P
80-pin
120/150ns
80pin simm
SMART Modular Technologies
SM832C512P-12
SM832C512P-15
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Untitled
Abstract: No abstract text available
Text: SIEMENS 19 Device Specification / C161 Device Specification The device specification describes the electrical parameters of the device. It lists DC characteristics like input, output or supply voltages or currents, and AC characteristics like timing characteristics
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7/AD15
6/AD14
13/SCLK
0/A16
5/AD13
4/AD12
1/A17
2/A18
3/A19
C1610,
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DD313
Abstract: KM718V787-8 KM718V787-9 ZZ3A10 SRAM sheet samsung
Text: KM718V787 CMOS SRAM ELECTRONICS 128K X 18-Bit Synchronous Burst SRAM FEATURES GENERAL DESCRIPTION. • Synchronous Operation. • On-Chip Address Counter. • W rite Self-Timed Cycle. • On- Chip Address and Control Registers. • Single 3.3V±5% Power Supply.
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KM718V787
128Kx
18-Bit
100-Pin
KM718V787)
GD313D4
00313DS
DD313
KM718V787-8
KM718V787-9
ZZ3A10
SRAM sheet samsung
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Untitled
Abstract: No abstract text available
Text: SIEMENS Specification 07,95 Preliminary C165 Revision History: 07.95 Original Version 25 MHz Previous Releases: 09.94 20 MHz Page Subjects (changes since last revision) 8 External Clock Drive Specification changed. 9 ¿6’ ¿1 4 >¿1 5 ! ¿16 >¿17 updated.
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D-81541
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Untitled
Abstract: No abstract text available
Text: TLC545C, TLC545I, TLC546C, TLC546I 8-BIT ANALOG-TO-DIGITAL CONVERTERS WITH SERIAL CONTROL AND 19 INPUTS S LA S 066B - D E C E M B E R 1985 - R EVISED O C TO B ER 1996 * 8-Bit Resolution A/D Converter • Microprocessor Peripheral or Stand-Alone Operation I
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TLC545C,
TLC545I,
TLC546C,
TLC546I
20-Channel
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Untitled
Abstract: No abstract text available
Text: U i 0354713 0000112 2 • 2bE D April 12, 1990 ADVANCED ELECTRONIC PKG AEPSS1M9 STATIC RAM MODULE > > 1,048,576 x 9 Organization » O n board BUFFERS for all address and control lines » Low profile design, 0.5 inch stand-off height. > > Double sided to maximize
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S632000
Abstract: cj cl a17
Text: 2M Bit 262,144 x 8 Static CMOS Mask ROM -> GOULD Preliminary Data Sheet /• iT lI 1 «Semiconductors S632000 (256K x 8) General Description Features The Gould AMI S632000 device is a 2,097,152 bit static m ask program mable C M O S R O M organized as 260,144 words by 8 bits. The device is fully TTL
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S632000
S632000-15-150
S632000
cj cl a17
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