CIRCUIT LASER DIODE PULSED Search Results

Hitachi DSA00279

Contextual Info: HL8325G GaAlAs Laser Diode ADE-208-582A Z 2nd Edition Dec. 2000 Description The HL8325G is a high-power 0.8 µm band GaAlAs laser diode with a TQW (triple quantum well) structure. Its internal circuit configuration is suitable for operation on a single positive supply voltage. It

HL8325G

Contextual Info: HL8325G GaAlAs Laser Diode ODE-208-582C Z Rev.3 Mar. 2005 Description The HL8325G is a high-power 0.8 µm band GaAlAs laser diode with a TQW (triple quantum well) structure. Its internal circuit configuration is suitable for operation on a single positive supply voltage. It

HL8333G

Contextual Info: HL8333G GaAlAs Laser Diode ODE-208-014 Z Rev.0 May. 2005 Description The HL8333G is a high-power 0.8 µm band GaAlAs laser diode with a TQW (triple quantum well) structure. Its internal circuit configuration is suitable for operation on a single positive supply voltage. It

HL8325G

Abstract: Hitachi DSA0047
Contextual Info: HL8325G GaAlAs Laser Diode ADE-208-582A Z 2nd Edition Dec. 2000 Description The HL8325G is a high-power 0.8 µm band GaAlAs laser diode with a TQW (triple quantum well) structure. Its internal circuit configuration is suitable for operation on a single positive supply voltage. It is

Contextual Info: HL8325G ODE-208-048 Z Rev.0 Oct. 17, 2006 GaAlAs Laser Diode Description The HL8325G is a high-power 0.8 µm band GaAlAs laser diode with a TQW (triple quantum well) structure. Its internal circuit configuration is suitable for operation on a single positive supply voltage. It is suitable as a light

Contextual Info: HL8325G ODE-208-048B Z Rev.2 Feb. 01, 2008 GaAlAs Laser Diode Description The HL8325G is a high-power 0.8 µm band GaAlAs laser diode with a TQW (triple quantum well) structure. Its internal circuit configuration is suitable for operation on a single positive supply voltage. It is suitable as a light

Contextual Info: HL8325G ODE2051-00 M Rev.0 Aug. 01, 2008 GaAlAs Laser Diode Description The HL8325G is a high-power 0.8 m band GaAlAs laser diode with a TQW (triple quantum well) structure. Its internal circuit configuration is suitable for operation on a single positive supply voltage. It is suitable as a light

HL8325G

Contextual Info: HL8325G ODE-208-048A Z Rev.1 May 08, 2007 GaAlAs Laser Diode Description The HL8325G is a high-power 0.8 µm band GaAlAs laser diode with a TQW (triple quantum well) structure. Its internal circuit configuration is suitable for operation on a single positive supply voltage. It is suitable as a light

MA177

Contextual Info: HL8325G GaAIAs Laser Diode Description The HL8325G is a high-power 0.8 jim band GaAIAs laser diode with a TQW triple quantum well structure. Its internal circuit configuration is suited for operation on a single positive supply voltage. It is suitable as a light source for optical disk memories, card readers and various other types o f optical

Hitachi DSA002726

Contextual Info: HL8325G GaAlAs Laser Diode Description The HL8325G is a high-power 0.8 µm band GaAlAs laser diode with a TQW triple quantum well structure. Its internal circuit configuration is suited for operation on a single positive supply voltage. It is suitable as a light source for optical disk memories, card readers and various other types of optical

HL8325G

Contextual Info: HL8325G GaAlAs Laser Diode Description The HL8325G is a high-power 0.8 µm band GaAlAs laser diode with a TQW triple quantum well structure. Its internal circuit configuration is suited for operation on a single positive supply voltage. It is suitable as a light source for optical disk memories, card readers and various other types of optical

Rsens and RREF

Contextual Info: . VM8001 LASER POWER AMPLIFIER PRELIMINARY FEATURES • High-Performance Integrated Circuit for Laser Diode Drive and Power Monitoring • Single +5-Volt Supply • Voltage-Controlled Read and Write Currents from 10 to 100 mA • 4 ns Rise and Fall Write Current Pulses With Only 3%

Contextual Info: HL8325G GaAlAs Laser Diodes HITACHI ADE-208-582 Z 1st. Edition October 1997 Description The HL8325G is a high - power 0.8 (Am band GaAlAs laser diode with a TQW (triple quantum well) structure. Its internal circuit configuration is suitable for operation on a single positive supply voltage. It is

Hitachi DSA00164

Contextual Info: HL8325G GaAlAs Laser Diodes ADE-208-582 Z 1st. Edition October 1997 Description The HL8325G is a high - power 0.8 µm band GaAlAs laser diode with a TQW (triple quantum well) structure. Its internal circuit configuration is suitable for operation on a single positive supply voltage. It is

Contextual Info: iC-WJB 2.7V LASER DIODE DRIVER Rev C1, Page 1/12 FEATURES APPLICATIONS ° ° ° ° ° ° ° ° ° ° LD driver for continuous or pulsed operation CW to 300kHz of up to 100mA Average control of laser power Simple LD power adjustment via external resistor

zd6v8

Abstract: N231
Contextual Info: iC-WJB if f if ll 2.7V LASER DIODE DRIVER FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ LD driver for continuous or pulsed operation CW to 300kHz of up to 250mA Average control of laser power Simple LD power adjustment via external resistor

170KW

Contextual Info: iC-WJB 2.7 V LASER DIODE DRIVER Rev E1, Page 1/12 FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Battery supplied LD modules ♦ LD Pointers Simple APC adjustment via an external resistor Continuous CW or pulsed operation of up to 300 kHz Laser diode current of up to 100 mA

Contextual Info: iC-WJB 2.7 V LASER DIODE DRIVER Rev D1, Page 1/12 FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Battery supplied LD modules ♦ LD Pointers Simple APC adjustment via an external resistor Continuous CW or pulsed operation of up to 300 kHz Laser diode current of up to 100 mA

MIL-STD-883H

Contextual Info: iC-WJB 2 .7 V LASER DIODE DRIVER F ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ E A T U R E S _ _ LD driver for continuous or pulsed operation CW to 300kHz o f up to 250mA Average control of laser power Simple LD power adjustment via external resistor

G003

Abstract: G101 G102 G103 G104 G301 MD 202 IC PULSED LASER DIODE DRIVER circuits 65KS
Contextual Info: iC-WJB 2.7V LASER DIODE DRIVER Rev C1, Page 1/12 FEATURES APPLICATIONS ° ° ° ° ° ° ° ° ° ° LD driver for continuous or pulsed operation CW to 300kHz of up to 100mA Average control of laser power Simple LD power adjustment via external resistor

G003

Abstract: G008 G010 iC-WJ SO8
Contextual Info: iC-WJB 2.7 V LASER DIODE DRIVER Rev D1, Page 1/12 FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Battery supplied LD modules ♦ LD Pointers Simple APC adjustment via an external resistor Continuous CW or pulsed operation of up to 300 kHz Laser diode current of up to 100 mA

LA167

Abstract: LA-63 LA-68 LA60
Contextual Info: LASER DIODE INC 1SE D | S305TÛS D0GGM75 fi | LA-60 SERIES LA-160 SERIES LASER DIODE, INC._ 850nm PULSED GaAIAs LASER DIODES T - f l- e e FEATURES > Wavelength Selection Available from 780 to 880 nm P High Efficiency at Low Drive Currents P Up to 90 Watts Peak Power Output

zd6v8

Abstract: G003 G008 G010 CG013
Contextual Info: iC-WJB 2.7 V LASER DIODE DRIVER Rev E1, Page 1/12 FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Battery supplied LD modules ♦ LD Pointers Simple APC adjustment via an external resistor Continuous CW or pulsed operation of up to 300 kHz Laser diode current of up to 100 mA

LA-167

Abstract: laser diode 780 nm cd dual beam laser circuit laser diode pulsed LA-160 LA-162 LA-163 LA167 LA-60 LA-63
Contextual Info: LASER DIODE INC 15E D | S3BS^flS 00D0M75 A | LA-60 SERIES LA-160 SERIES LASER DIODE, INC. T -H -i'O C 850nm PULSED GaAIAs LASER DIODES FEATURES P W avelength Selection Available from 780 to 880 nm P High Efficiency a t Low Drive Currents t> Up to 90 Watts Peak Power O utput