CIRCLE OF CONSTANT NOISE Search Results

CIRCLE OF CONSTANT NOISE Result Highlights (5)

Part	Manufacturer	Description
CLC425A/BPA	Rochester Electronics LLC	CLC425 - Op Amp, Wideband, Low-Noise - Dual marked (5962-9325901MPA)
CLC428A/BPA	Rochester Electronics LLC	CLC428 - OP AMP, DUAL, LOW NOISE, WIDEBAND, VOLT FDBK - Dual marked (5962-9470801MPA)
F2923EVBI	Renesas Electronics Corporation	Evaluation Board for F2923 SP2T with Constant Impedance, K\|z\|
F2923NCGI	Renesas Electronics Corporation	Constant Impedance K\|z\| SP2T RF Switch
F2923NCGI8	Renesas Electronics Corporation	Constant Impedance K\|z\| SP2T RF Switch

CIRCLE OF CONSTANT NOISE Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
matching with smith chart Abstract: AN-1852 chart AN1852 APP1852 MAX2320 MAX2720 MAX2721 lna 30MHz to 2214 Text: Maxim > App Notes > WIRELESS, RF, AND CABLE Keywords: lna, rf, rfic, amplifier, stability, power gain, transmission lines, rfics, theory, smith chart, rf ics, radio frequency, amplifiers, low noise amplifier, amps Jan 09, 2003 APPLICATION NOTE 1852 Low-Noise Amplifier Stability Concept to Practical Considerations,	Original	com/an1852 MAX2320: MAX2720: MAX2721: AN1852, APP1852, Appnote1852, matching with smith chart AN-1852 chart AN1852 APP1852 MAX2320 MAX2720 MAX2721 lna 30MHz to 2214	PDF
circle surround 2 IC Abstract: Using Linvill Techniques LS12 MAX2320 MAX2720 MAX2721 SS11 app abstract Text: Maxim > App Notes > WIRELESS, RF, AND CABLE Keywords: lna, rf, rfic, amplifier, stability, power gain, transmission lines, rfics, theory, smith chart, rf ics, radio frequency, amplifiers, low noise amplifier, amps Jan 09, 2003 APPLICATION NOTE 1851 Low-Noise Amplifier Stability Concept to Practical Considerations,	Original	com/an1851 MAX2320: MAX2720: MAX2721: AN1851, APP1851, Appnote1851, circle surround 2 IC Using Linvill Techniques LS12 MAX2320 MAX2720 MAX2721 SS11 app abstract	PDF
APP1851 Abstract: LS12 MAX2320 SS11 s11s Text: Maxim > App Notes > Wireless and RF Keywords: lna, rf, rfic, amplifier, stability, power gain, transmission lines, rfics, theory, smith chart, rf ics, radio frequency, amplifiers, low noise amplifier, amps Jan 09, 2003 APPLICATION NOTE 1851 Low-Noise Amplifier Stability Concept to Practical Considerations,	Original	MAX2320: com/an1851 AN1851, APP1851, Appnote1851, APP1851 LS12 MAX2320 SS11 s11s	PDF
RF transistors with s-parameters Abstract: MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor s11 s12 s21 s22 Hewlett-Packard transistor microwave Text: High-Frequency Transistor Primer Part II Noise and S-parameter Characterization This is the second part of the Hewlett-Packard High Frequency Transistor Primer series. It is an introduction to the noise and S-parameter characterization of GaAs FET and silicon bipolar	Original	5091-8350E 5968-1411E RF transistors with s-parameters MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor s11 s12 s21 s22 Hewlett-Packard transistor microwave	PDF
high power FET transistor s-parameters Abstract: transistor s11 s12 s21 s22 FET transistors with s-parameters transistor s parameters noise 2S12 circle of constant Noise MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT bipolar transistor ghz s-parameter s21a1 Text: High-Frequency Transistor Primer Part II Noise and S-parameter Characterization This is the second part of the Agilent Technologies High Frequency Transistor Primer series. It is an introduction to the noise and S-parameter characterization of GaAs FET and silicon bipolar	Original	5091-8350E 5968-1411E high power FET transistor s-parameters transistor s11 s12 s21 s22 FET transistors with s-parameters transistor s parameters noise 2S12 circle of constant Noise MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT bipolar transistor ghz s-parameter s21a1	PDF
transistor s11 s12 s21 s22 Abstract: 5091-8350E MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT high power FET transistor s-parameters s11a1 s-parameter s11 s12 s21 Text: High-Frequency Transistor Primer Part II Noise and S-parameter Characterization This is the second part of the Hewlett-Packard High Frequency Transistor Primer series. It is an introduction to the noise and S-parameter characterization of GaAs FET and silicon bipolar	Original	5091-8350E 5968-1411E transistor s11 s12 s21 s22 5091-8350E MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT high power FET transistor s-parameters s11a1 s-parameter s11 s12 s21	PDF
APP742 Abstract: smith chart smith MAX2320 MAX2338 MAX2358 MAX2387 MAX2388 MAX2472 matching with smith chart Text: Maxim > App Notes > WIRELESS, RF, AND CABLE Keywords: smith chart, RF, impedance matching, transmission line Jul 22, 2002 APPLICATION NOTE 742 Impedance Matching and the Smith Chart: The Fundamentals Abstract: Tutorial on RF impedance matching using the Smith Chart. Examples are shown plotting reflection	Original	MAX2472 900MHz MAX2387: MAX2388: MAX2472: MAX2473: MAX2640: MAX2641: MAX2642: MAX2644: APP742 smith chart smith MAX2320 MAX2338 MAX2358 MAX2387 MAX2388 matching with smith chart	PDF
MAX2320 Abstract: MAX2338 MAX2358 MAX2472 SIEMENS saw filter Maxim Integrated MAX2640 28 27 app abstract Text: Maxim > App Notes > Wireless, RF, and Cable Keywords: smith chart, RF, impedance matching, transmission line Jul 22, 2002 APPLICATION NOTE 742 Impedance Matching and the Smith Chart: The Fundamentals Abstract: Tutorial on RF impedance matching using the Smith chart. Examples are shown plotting reflection	Original	MAX2472 900MHz MAX2388: MAX2472: MAX2473: MAX2640: MAX2641: MAX2642: MAX2644: MAX2645: MAX2320 MAX2338 MAX2358 SIEMENS saw filter Maxim Integrated MAX2640 28 27 app abstract	PDF
smith chart Abstract: max2640 smith smith MAX2320 MAX2338 MAX2387 MAX2388 MAX2640 MAX2641 MAX2642 Text: WIRELESS, RF, AND CABLE Application Note 742: Mar 23, 2001 Impedance Matching and the Smith Chart: The Fundamentals Tutorial on RF impedance matching using the Smith Chart. Examples are shown plotting reflection coefficients, impedances and admittances. A sample matching network is designed at 60 MHz using graphical methods.	Original	MAX2320: MAX2338: MAX2387: MAX2388: MAX2640: MAX2641: MAX2642: MAX2644: MAX2645: MAX2648: smith chart max2640 smith smith MAX2320 MAX2338 MAX2387 MAX2388 MAX2640 MAX2641 MAX2642	PDF
ADL5521/23 Abstract: No abstract text available Text: Preliminary Technical Data Sheet FEATURES 400 MHz to 4000 MHz Low Noise Amplifier ADL5523 FUNCTIONAL BLOCK DIAGRAM Operation from 400 MHz to 4000 MHz Noise figure of 0.9 dB at 900 MHz Including external input match Gain of 21.5 dB at 900 MHz OIP3 of 35.0 dBm at 900 MHz	Original	ADL5521 ADL5523 ADL5523 ADL5523ACPZ-R7 ADL5523-EVALZ1 061507-B PR06829-0-7/08 ADL5521/23	PDF
Untitled Abstract: No abstract text available Text: 400 MHz to 4000 MHz Low Noise Amplifier ADL5521 Preliminary Technical Data FEATURES Operation from 400 MHz to 4000 MHz Noise figure of 0.8 dB at 900 MHz Including external input match Gain of 20.0 dB at 900 MHz OIP3 of 37.7 dBm at 900 MHz P1dB of 22.0 dBm at 900 MHz	Original	ADL5523 ADL5521 ADL5521 ADL5521ACPZ-R7 ADL5521-EVALZ1 061507-B PR06828-0-7/08	PDF
BLM21PG600SN1D Abstract: ATF-50189 ATF50189 RO4350 Text: ATF-50189 2.4 GHz high-linearity second stage LNA/ driver using ATF-50189 Application Note 5106 Introduction EPHEMT biasing Avago Technologies’ATF-50189 is a high linearity, medium power, low noise E-pHEMT FET in a low cost surface mount SOT89 package. It is suitable for high output IP3 LNA Q2	Original	ATF-50189 ATF-50189 5989-2799EN AV01-0677EN BLM21PG600SN1D ATF50189 RO4350	PDF
matching circuit of atf 52189 Abstract: BLM21PG600SN1D 53189 ATF-52189 ATF-521P8 ATF-53189 RO4350 depletion mode PHEMT .s2p Text: 2.0 GHz high-linearity second stage LNA/ driver using the ATF-52189 Application Note 5245 Introduction EPHEMT Biasing Avago Technologies’ ATF-52189 is a high linearity, medium power, low noise E-pHEMT FET in a low cost surface mount SOT89 package. It is suitable for high	Original	ATF-52189 ATF-52189 ATF-521P8 5989-4040EN matching circuit of atf 52189 BLM21PG600SN1D 53189 ATF-521P8 ATF-53189 RO4350 depletion mode PHEMT .s2p	PDF
ATF-53189 Abstract: SMA CONN ATF - 53189 AMPLIFIER ATF-521P8 ATF53189 RO4350 53189 Text: 2.0 GHz high-linearity second stage LNA/driver using Avago Technologies ATF-53189 Application Note 5244 Introduction Circuit Description Avago Technologies’ ATF-53189 is a high linearity, medium power, low noise E-pHEMT FET in a low cost surface mount SOT89 package. It is suitable for high	Original	ATF-53189 ATF-53189 ATF-521P8 5989-3846EN SMA CONN ATF - 53189 AMPLIFIER ATF53189 RO4350 53189	PDF

si4432 Abstract: Si443x AN427 mathcad Si433X SI4432-V2 Text: AN427 EZRADIOPRO Si433X & Si443X RX LNA MATCHING 1. Introduction The purpose of this application note is to provide a description of the impedance matching of the RX differential low noise amplifier LNA on the Si433x and Si443x family of RFICs. We desire to simultaneously achieve two goals with the matching network:	Original	AN427 Si433X Si443X Si433x si4432 AN427 mathcad SI4432-V2	PDF
AMPSA Abstract: DS-AMPSA-MTCH-2014.2.5 Text: AWR Connected AMPSA OVERVIEW AWR Connected™ for AMPSA Impedance-Matching Wizard IMW provides a state-of-the-art synthesis solution for impedance-matching networks for/of RF and microwave circuits and devices such as amplifiers, antennas, etc. Integrating	Original	DS-AMPSA-MTCH-2014 AMPSA DS-AMPSA-MTCH-2014.2.5	PDF
RO4350B Abstract: MGA-61563 GRM1555C1H330JZ01E isolator 2 2.1 GHz AN5012 RO4350 0603CS 0604HQ 4350B E4413A Text: A 2.2-2.9 GHz Low Noise Amplifier Using Avago Technologies’ MGA-61563 Application Note 5237 MGA-61563 is the high performance GaAs MMIC amplifier fabricated with Avago Technologies’ E-pHEMT process and is targeted for commercial wireless application from 100 MHz to 6 GHz. The MGA-61563 uses	Original	MGA-61563 MGA-61563 MGA-6156is E4419B E4413A 5989-3285EN AV02-1428EN RO4350B GRM1555C1H330JZ01E isolator 2 2.1 GHz AN5012 RO4350 0603CS 0604HQ 4350B	PDF
Rogers 4350B Abstract: 4350B SKY67100 SKY67100-396LF SKY67101 Rogers 4350B substrate Text: WHITE PAPER Designing Ultra Low Noise Amplifiers for Infrastructure Receiver Applications By Fikret Altunkilic, Alan Miller, Vivian Tzanakos and Michele Lewis Introduction Amplifiers used in wireless infrastructure receiver applications have the key requirements of low noise, high linearity, and	Original	SKY67101-396LF, SKY67100-396LF, Rogers 4350B 4350B SKY67100 SKY67100-396LF SKY67101 Rogers 4350B substrate	PDF
Untitled Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DAT BFS25A NPN 5 GHz wideband transistor Product specification December 1997 NXP Semiconductors Product specification NPN 5 GHz wideband transistor FEATURES BFS25A PINNING • Low current consumption PIN  Low noise figure DESCRIPTION	Original	BFS25A OT323 OT323 MBC870 OT323. R77/03/pp13	PDF
MRC034 Abstract: MRC036 MRC031 BFS25A RF NPN POWER TRANSISTOR 3 GHZ Replacement Handbook MRC053 Text: DISCRETE SEMICONDUCTORS DATA SHEET BFS25A NPN 5 GHz wideband transistor Product specification December 1997 NXP Semiconductors Product specification NPN 5 GHz wideband transistor FEATURES BFS25A PINNING • Low current consumption PIN  Low noise figure	Original	BFS25A OT323 OT323 MBC870 OT323. R77/03/pp13 MRC034 MRC036 MRC031 BFS25A RF NPN POWER TRANSISTOR 3 GHZ Replacement Handbook MRC053	PDF
cavity resonator Abstract: two cavity resonator design dielectric resonator oscillator Text: TM Single Frequency Cavity Resonator Patent Pending DLI's Cavity Resonators set a new standard for high Q resonator performance across a broad spectrum of frequencies. High Q resonators play a critical role in system noise performance, and employing this advantage is	Original		PDF
41ga Abstract: No abstract text available Text: 400 MHz – 4000 MHz Low Noise Amplifier ADL5521 Preliminary Technical Data FEATURES Operation from 400 MHz to 4000 MHz Noise figure of 0.8 dB at 900 MHz Gain of 20.0 dB at 900 MHz OIP3 of 37.7 dBm at 900 MHz P1dB of 22.0 dBm at 900 MHz Integrated bias control circuit	Original	ADL5523 ADL5521 ADL5521 ADL5521ACPZ-R71 ADL5521ACPZ-WP1 ADL5521-EVALZ J-STD-020 J-STD-20 41ga	PDF
ADL5523 Abstract: ADL5521-EVALZ ADL5521 900MHZ Text: 400 MHz – 4000 MHz Low Noise Amplifier ADL5521 Preliminary Technical Data FEATURES Operation from 400 MHz to 4000 MHz Noise figure of 0.8 dB at 900 MHz Including external input match Gain of 20.0 dB at 900 MHz OIP3 of 37.7 dBm at 900 MHz P1dB of 22.0 dBm at 900 MHz	Original	ADL5521 ADL5523 ADL5521 061507-B ADL5521ACPZ-R71 ADL5521ACPZ-WP1 ADL5521-EVALZ J-STD-020 ADL5523 ADL5521-EVALZ 900MHZ	PDF
gummel Abstract: small signal high frequency bipolar transistor IC sequential DATA BASE 60Ghz gex 96 a TRANSISTOR 30GHZ transistor RBV cbv2 Y parameters of transistors in high frequency Text: IEEE BCTM 6.1 Im proved E xtraction o f B ase and E m itter R esistan ce from Sm all Signal H igh Frequency A d m itta n ce M easurem ents W.J: Kloosterm an, J.C.J. Paasschens and D.B.M . Klaassen Philips Research Laboratories, Prof. Holstlaan 4, 5656 A A Eindhoven, The Netherlands	OCR Scan	ED-31 2048/JessiT28 30GHz, 60Ghz gummel small signal high frequency bipolar transistor IC sequential DATA BASE gex 96 a TRANSISTOR 30GHZ transistor RBV cbv2 Y parameters of transistors in high frequency	PDF

CIRCLE OF CONSTANT NOISE Search Results

CIRCLE OF CONSTANT NOISE Result Highlights (5)

CIRCLE OF CONSTANT NOISE Datasheets Context Search

matching with smith chart

circle surround 2 IC

APP1851

RF transistors with s-parameters

high power FET transistor s-parameters

transistor s11 s12 s21 s22

APP742

MAX2320

smith chart

ADL5521/23

Untitled

BLM21PG600SN1D

matching circuit of atf 52189

ATF-53189

si4432

AMPSA

RO4350B

Rogers 4350B

Untitled

MRC034

cavity resonator

41ga

ADL5523

gummel