HS-6564RH
Abstract: No abstract text available
Text: HS-6564RH S I GN D ES W NE at F O R or D E H nter c D e R N 7 C /ts ME 564 or t COM ee HS-6 al Supp rsil.com E R S ic .inte NOT chn r Te or w w w u o 8K SI L tact con -INTER 8 1-88 September 1997 Features Radiation Hardened x 8, 16K x 4 CMOS RAM Module
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HS-6564RH
308mW/MHz
250ns
-55oC
125oC
HS5-6504RH
HS-6564RH
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CHN 550
Abstract: CHN 545 chn 710 CHN 712 chn 538 CHN 431 CHN 709 CHN 741 chn 738 chn 648 equivalent
Text: R&S ZNC/ZND Vector Network Analyzers User Manual ;xíÇ2 User Manual Test & Measurement 1173.9557.02 ─ 26 This manual describes the following vector network analyzer types: ● R&S®ZNC3 (2 ports, 9 kHz to 3 GHz, N connectors), order no. 1311.6004K12
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6004K12
ZNC-B10
ZN-B14
ZNC-B19
ZNC3-B22
ZNC-K19
VXI-11
CHN 550
CHN 545
chn 710
CHN 712
chn 538
CHN 431
CHN 709
CHN 741
chn 738
chn 648 equivalent
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CHN 525
Abstract: TRANSISTOR chn 602 SCR PIN CONFIGURATION CHN 035 chn 725 chn 729 chn 038 TRANSISTOR CHN 736 CHN T4 chn 720 chn 728
Text: 2-Channel, 2.35 V to 5.25 V 1 MSPS, 10-/12-Bit ADCs AD7912/AD7922 Preliminary Technical Data FUNCTIONAL BLOCK DIAGRAM FEATURES VDD Fast throughput rate: 1 MSPS Specified for VDD of 2.35 V to 5.25 V Low power: 4.8 mW typ at 1 MSPS with 3 V supplies 15.5mW typ at 1 MSPS with 5 V supplies
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10-/12-Bit
AD7912/AD7922
EVAL-AD7922
AD7912/AD7922
PR04351
CHN 525
TRANSISTOR chn 602
SCR PIN CONFIGURATION CHN 035
chn 725
chn 729
chn 038 TRANSISTOR
CHN 736
CHN T4
chn 720
chn 728
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TRANSISTOR chn 602
Abstract: CHN 525 chn 038 TRANSISTOR CHN 450 Equivalent for SCR 207A A8303 CHN 804 tr/pcb-2-1/TRANSISTOR chn 602
Text: 2-Channel, 2.35 V to 5.25 V, 1 MSPS, 10-/12-Bit ADCs AD7912/AD7922 FUNCTIONAL BLOCK DIAGRAM FEATURES VDD Fast throughput rate: 1 MSPS Specified for VDD of 2.35 V to 5.25 V Low power: 4.8 mW typ at 1 MSPS with 3 V supplies 15.5mW typ at 1 MSPS with 5 V supplies
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10-/12-Bit
AD7912/AD7922
10-/12-BIT
EVAL-AD7922
D04351â
TRANSISTOR chn 602
CHN 525
chn 038 TRANSISTOR
CHN 450
Equivalent for SCR 207A
A8303
CHN 804
tr/pcb-2-1/TRANSISTOR chn 602
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CHN 525
Abstract: chn 038 TRANSISTOR chn 734 TRANSISTOR chn 602 CHN 602 CHN 804 chn 728 CHN T4 chn 725 CHN 736
Text: 2-Channel, 2.35 V to 5.25 V, 1 MSPS, 10-/12-Bit ADCs AD7912/AD7922 FUNCTIONAL BLOCK DIAGRAM FEATURES VDD Fast throughput rate: 1 MSPS Specified for VDD of 2.35 V to 5.25 V Low power: 4.8 mW typ at 1 MSPS with 3 V supplies 15.5mW typ at 1 MSPS with 5 V supplies
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10-/12-Bit
AD7912/AD7922
10-/12-BIT
EVAL-AD7922
D04351
CHN 525
chn 038 TRANSISTOR
chn 734
TRANSISTOR chn 602
CHN 602
CHN 804
chn 728
CHN T4
chn 725
CHN 736
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chn 442
Abstract: chn 437 chn 439 chn 436 lz smd marking
Text: MICRON TE CHN OLOGY INC 3.7E- D • blllSMi 0001530 *} MICRON ■ MT5C6408 8830 t|CHt*MCtV MC MILITARY SRAM 8K X 8 SRAM AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT (Top View • SMD 5962-85525, -89691 • JAN M38510/292 « RAD-tolerant (consult factory)
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MT5C6408
M38510/292
28L/300
32L/LCC
C-12A)
MIL-STD-883
chn 442
chn 437
chn 439
chn 436
lz smd marking
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ST CHN 510
Abstract: 83C97 chn 809 chn 809 ST
Text: 83C97 T e chn o log y, In co rp o rate d 10BASE-T Ethernet Transceiver With On Chip Filters and Digital Interface and Serial Port PRELIMINARY October 1994 SEEQ AutoDUPLEX Designation S ym bol indentifies product as A u to D U P L E X device. Description
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83C97
10BASE-T
83C97
10BASET)
ST CHN 510
chn 809
chn 809 ST
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Untitled
Abstract: No abstract text available
Text: MOS LSI T M S 4025 NC 2048-BIT DYNAMIC RANDOM-ACCESS MEMORY features • L o w pow er dissip ation • Full decode • A ccess tim e — 280 nsec m ax • Cycle tim e — 64 0 nsec m ax • H igh output-current cap ab ility 2 m A ty p • Low -threshold te chn o lo gy
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2048-BIT
24-pin
1024-w
1024-bit
10-bit
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chn 809
Abstract: chn 809 ST Transistor TT 2246 transistor chn 037 MO40 TT 2246 transistor capacitor JA8 KMA Series 232 pin diagram of BC 547 SABRE 408
Text: 83C95 T e chn o log y, Inco rp o rate d 10BASE-T Ethernet Transceiver With On Chip Filters And AUI PRELIMINARY October 1994 S E E Q A u to D U P L E X D esignation Symbol indentifies product as AutoDUPLEX device. D escription The 83C95 is a highly integrated analog interface 1C for
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83C95
10BASE-T
83C95
10BASET)
10BASET
chn 809
chn 809 ST
Transistor TT 2246
transistor chn 037
MO40
TT 2246 transistor
capacitor JA8
KMA Series 232
pin diagram of BC 547
SABRE 408
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Transistor TT 2246
Abstract: transistor chn 911 TT 2246 transistor jm31a pulse electronics era transformer transistor chn 037 chn 809 S4744
Text: SEEQ T e chn o log y, Inco rp o rate d 83C96 10BASE-T Ethernet Transceiver With On Chip Filters and Digital Interface PRELIMINARY October 1994 SEEQ AutoDUPLEX Designation Sym bol indentifies product as A u to D U P L E X device. Description The 83C96 is a highly integrated analog interface 1C for
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83C96
10BASE-T
83C96
10BASET)
10BASET
Transistor TT 2246
transistor chn 911
TT 2246 transistor
jm31a
pulse electronics era transformer
transistor chn 037
chn 809
S4744
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Untitled
Abstract: No abstract text available
Text: 256 Kilobit 32K x 8 SuperFlash MTP SST27SF256 Prelim inary Specifications FEATURES: • • 5.0V Read Operation (4.5V to 5.5V) • Does Not Require UV Source Chip Erase Time: 100 ms • TTL I/O Compatibility Low Power Consumption • JEDEC Standard Byte-wide EPROM Pinouts
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SST27SF256
28-Pin
32-Pin
SST27SF256_
S-016
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chn+335
Abstract: No abstract text available
Text: 1 Megabit 128K x 8 Multi-Purpose Flash SST39VF010 Preliminary Specifications FEATURES: • • • Organized as 128K X 8 Fast Sector Erase and Byte Program: Single 2.7-3.6V Read and Write Operations - Superior Reliability - • Low Power Consumption: - •
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SST39VF010
MO-142
chn+335
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1/CHN 326
Abstract: No abstract text available
Text: 21Ü 2 Megabit 256K x 8 Multi-Purpose Flash SST39SF020 Data Sheet FEATURES: • • • Organized as 256 K X 8 Fast Sector Erase and Byte Program: Single 5.0V Read and Write Operations - Superior Reliability - • • Active Current: 20 mA (typical) Standby Current: 10 |iA (typical)
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SST39SF020
1/CHN 326
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Untitled
Abstract: No abstract text available
Text: 4 Megabit 512K x 8-Bit Multi-Purpose Flash SST39VF040Q Advance Information FEATURES: • Organized as 512 K x 8 • • Single 2.7-3.6V Read and Write Operations • • V • Superior Reliability - • Uniform 4 KByte sectors Block Erase Capability (8 blocks)
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SST39VF040Q
SST39VF040Q
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Untitled
Abstract: No abstract text available
Text: 512 Kilobit 64K x 8 Multi-Purpose Flash SST39VF512 Preliminary Specifications FEATURES: • • • Organized as 64K X 8 Fast Sector Erase and Byte Program: Single 2.7-3.6V Read and Write Operations - Superior Reliability - • Low Power Consumption: - •
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SST39VF512
MO-142
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CHN 142
Abstract: CHN T4
Text: 2 Megabit 256K x 8 Multi-Purpose Flash SST39VF020 Preliminary Sp ecifica tions FEATURES: • Organized as 256K X 8 • Single 2.7-3.6V Read and Write Operations • Superior Reliability - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention
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SST39VF020
MO-142
CHN 142
CHN T4
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Untitled
Abstract: No abstract text available
Text: 21Ü 16 Megabit FlashBank Memory SST38UF166 Advance Information FEATURES: • • • Single 2.2-2.8V Read and Write Operations Read Access Time Separate Memory Banks for Code or Data - - Latched Address and Data Superior Reliability End of Write Detection
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SST38UF166
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CHN 512
Abstract: CHN 314 1/CHN 852
Text: 21Ü 512 Kilobit 64K x 8 Multi-Purpose Flash SST39SF512 Data Sheet FEATURES: • • • Organized as 64K X 8 Fast Sector Erase and Byte Program: Single 5.0V Read and Write Operations - Superior Reliability - • • Active Current: 20 mA (typical) Standby Current: 10 |iA (typical)
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SST39SF512
CHN 512
CHN 314
1/CHN 852
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chn 348
Abstract: CHN 314 chn 317 CHN 852 chn 440
Text: 2 Megabit 256K x 8 SuperFlash MTP SST37VF020 Prelim inary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention
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SST37VF020
32-Pin
SST37VF020
chn 348
CHN 314
chn 317
CHN 852
chn 440
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Untitled
Abstract: No abstract text available
Text: 8 Megabit Flash + 2 Megabit SRAM ComboMemory SST32LH802 Advance Inform ation FEATURES: • Organized as 512 K x16 Flash + 128Kx16 SRAM or 512K x8 x2 Flash + 128K x8 x2 SRAM • Single 3.0-3.6V Read and Write Operations • Concurrent Operation - Read from or write to SRAM while erase/
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SST32LH802
128Kx16
SST32LH802
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Untitled
Abstract: No abstract text available
Text: 21Ü 1 Megabit 128K x 8 Multi-Purpose Flash SST39SF010 Data Sheet FEATURES: • Organized as 128K X 8 • Single 5.0V Read and Write Operations • Superior Reliability - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention Low Power Consumption:
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SST39SF010
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Untitled
Abstract: No abstract text available
Text: iiili 8 Megabit 1M x 8-Bit Multi-Purpose Flash _ SST39VF080Q_ Advance Information FEATURES: • Organized as 1M x 8 • Latched Address and Data • Single 2.7-3.6V Read and Write Operations • Fast Sector Erase and Byte Program:
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SST39VF080Q_
SST39VF080Q
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27721
Abstract: No abstract text available
Text: iiili 16 Megabit 2M x 8-Bit Multi-Purpose Flash _ SST39VF016Q_ Advance Information FEATURES: • Organized as 2 M X 8 • Latched Address and Data • Single 2.7-3.6V Read and Write Operations • Fast Sector Erase and Byte Program:
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SST39VF016Q_
SST39VF016Q
Multi58-4276
27721
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oasis
Abstract: SST39VF400 SST39VF400 read code
Text: 4 Megabit 256K x 16-Bit Multi-Purpose Flash f SST39VF400 r Advance Information FEATURES: • Organized as 256 K X 16 • Single 2.7-3.6V Read and Write Operations • Superior Reliability - • • 2 KWord sectors Uniform 32 KWord blocks Fast Read Access Time:
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16-Bit)
SST39VF400
oasis
SST39VF400
SST39VF400 read code
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