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    CHMC 48 Search Results

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    SW50N06

    Abstract: Samwin* sw50n06 Samwin samwin sw50n06 CHMC sw50n chmc equivalent
    Text: SAMWIN SW50N06 General Description Features N-Channel MOSFET BVDSS Minimum RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) This power MOSFET is produced in CHMC with advanced VDMOS process, planar stripe. This technology enable power MOSFET to have better


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    PDF SW50N06 023ohm SW50N06 Samwin* sw50n06 Samwin samwin sw50n06 CHMC sw50n chmc equivalent

    SW7N60

    Abstract: Samwin
    Text: SAMWIN SW7N60 Features General Description N-Channel MOSFET BVDSS Minimum RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ℃) This power MOSFET is produced in CHMC with advanced VDMOS process, planar stripe. This technology enable power MOSFET to have better


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    PDF SW7N60 200nF 300nF SW7N60 Samwin

    SW2N60

    Abstract: Samwin SW2N
    Text: SAMWIN SW2N60 General Description Features zN-Channel MOSFET zBVDSS Minimum zRDS(ON) (Maximum) zID zQg (Typical) zPD (@TC=25 ℃) : 600 V : 5.0 ohm : 2.0 A : 16 nc : 50 W This power MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN. This


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    PDF SW2N60 O-252 O-220 O-251 SW2N60 Samwin SW2N

    Samwin

    Abstract: SW4N60 CHMC
    Text: SAMWIN SW4N60 General Description Features N-Channel MOSFET BVDSS Minimum RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 600 V : 2.2 ohm : 4.0 A : 20 nc : 73 W This power MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better


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    PDF SW4N60 Samwin SW4N60 CHMC

    d2915cp

    Abstract: CHMC chmc D2915CP CHMC 37 agc v3 chmc fm chmc* 50 CHMC 36 d2915c CHMC 104
    Text: CHMC 华越微电子有限公司 D2915CP 图象伴音、视频同步处理电路 概述 D2915CP 外形图 D2915 用于处理所有小型信号(除彩色信号)。 电路采用 DIP28 塑料封装。 主要特点 高集成技术使视频、中频电路、音频转换器电路、


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    PDF D2915CP D2915 DIP28 V2721 d2915cp CHMC chmc D2915CP CHMC 37 agc v3 chmc fm chmc* 50 CHMC 36 d2915c CHMC 104

    chmc

    Abstract: isolation transformer 6V R2165 chmc sh UTC9106 Chmc s sc910 SC9106 chmc s2
    Text: Silicore TONE RINGER SC9106 GENERAL DESCRIP TION Outline Dra wing The SC9106 is a bipolar integrated circuit designed for teleph on e bell replace ment. FUNCTIONS z Two oscillators z Output amp lifier z Power supply control circuit FEATURES z Designed for telephone bell replacement.


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    PDF SC9106 SC9106 SC9106. chmc isolation transformer 6V R2165 chmc sh UTC9106 Chmc s sc910 chmc s2

    D2915

    Abstract: CHMC IC tv rf section CHMC 37 CD10 RD10 CHMC am fm TV RF tuner tv vertical ic circuit CHMC 104
    Text: Silicore TV VIF & SIF & DEFLECTION SYSTEM D2915 IC FOR TV LARGE INTEGRTION O U T L I N E D R AW I N G GENERAL DESCRIPTION The D2915 integrated stages for is circuit the a monolithic containing V I F, SIF all and deflection functions of television receivers.


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    PDF D2915 V27-21 D2915 CHMC IC tv rf section CHMC 37 CD10 RD10 CHMC am fm TV RF tuner tv vertical ic circuit CHMC 104

    UTC9106

    Abstract: chmc chmc sh SC9106 Silicore Shaoxing Silicore Technology
    Text: Silicore SC9106 TEST CIRCUIT 1 2 +5% 0.47uF _ 6.8K 165K +_ 1% S1 8 SC 9106 7 3 6 4 5 191K +_1% S2 0.068uF _ 5% _ A + APPLICATION CIRCUIT R1 1 C1 TIP 0.9uF 560 C5 2 1 8 0.22uF RSL 3 2 RING C4 22uF/35V 29V D1 10K 7 SC9106 3 6 4 5 R2 _1% 165K+ C2 _5% 0.47uF+


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    PDF SC9106 068uF 22uF/35V UTC9106 SC9106. SC9106 chmc chmc sh Silicore Shaoxing Silicore Technology

    2N60D

    Abstract: chengdu RX2N60D chmc* 50 mosfet 1980 CHMC
    Text: CPEC 成都瑞芯电子有限公司 CHENGDU PROMISING CHIP ELECTRONICS CO., LTD RX2N60D 600V N 沟道功率 MOSFET 产品简介 地址;成都高新区世纪城南路 216 号天府软件园 D 区 6 号楼 14 层 Tel:086-28-85198496 85198428 Fax:086-28-8519893


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    PDF RX2N60D Tel086-28-85198496 Fax086-28-8519893 RX2N60D] 2N60D chengdu RX2N60D chmc* 50 mosfet 1980 CHMC

    2N60s

    Abstract: chengdu
    Text: CPEC 成都瑞芯电子有限公司 CHENGDU PROMISING CHIP ELECTRONICS CO., LTD RX2N60s 600V N 沟道功率 MOSFET 产品简介 地址;成都高新区世纪城南路 216 号天府软件园 D 区 6 号楼 14 层 Tel:086-28-85198496 85198428 Fax:086-28-8519893


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    PDF RX2N60s Tel086-28-85198496 Fax086-28-8519893 RX2N60s] 2N60s chengdu

    LMM 2057

    Abstract: TLC 7555 MBI 5066 samxon GR chn 809 LM 805 CV yx 805 3054 CHN 747 CHMC 46 CHN 932
    Text: aJ}1E R^kb^l SZ[e^ O37 aJ3@s R^kb^l CaZkm O39 ,5M- Aiieb\Zmbhg Gnb]^ebg^l O3: aJ{z OZkm Mnf[^k Rrlm^f O369 {`aJbW SZiibg` Ri^\b_b\Zmbhgl O36: 1obW OZ\dbg` Ri^\b_b\Zmbhgl O36; K^Z] Fhkfbg` Ri^\b_b\Zmbhg O36< LbgbZmnk^ Sri^ O36= ymJ G^g^kZe Onkihl^ O387 =H>J


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    PDF O3659 O3666 O3678 LMM 2057 TLC 7555 MBI 5066 samxon GR chn 809 LM 805 CV yx 805 3054 CHN 747 CHMC 46 CHN 932

    M2KA

    Abstract: HEPC XS2F-D523-D80-A OMR H C3JW ly2f t2 YAZAKI Terminal7116-4022 WL01CA 54151A
    Text: We surveyed SVHC 161 substances. REACH/SVHC Information Product description SMCI XB. SMC TE SENSOR YA-JA01 PB FREE SENSOR YA-HC05 PBFREE SP SMC DI SENSOR YA-HC04 SMC DI SENSOR YA-JB01 SENSOR YA-HC09(SP) SENSOR YA-HA01PB-FREE(SP) SENSOR YA-HC09 SMC YA-JA02 A-TE SENSOR


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    PDF YA-JA01 YA-HC05 YA-HC04 YA-JB01 YA-HC09 YA-HA01PB-FREE YA-HC09 YA-JA02 YA-HC18 YA-JB05 M2KA HEPC XS2F-D523-D80-A OMR H C3JW ly2f t2 YAZAKI Terminal7116-4022 WL01CA 54151A

    CPGA100

    Abstract: No abstract text available
    Text: rz7 SGS-THOMSON * 7 # . H O Ê lM ilL IO T [ii!lD ( g @ W .A .R .P . 1 .1 WEIGHT ASSOCIATIVE RULE PROCESSOR ADVANCED DATA • High Speed Rules Processing ■ Antecedent Membership Functions with any Shape ■ Up to 256 Rules (4 Antecedents, 1 Consequent)


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    PDF CPGA100 PLCC84 100-pin CPGA100 84-lead

    mte maxim

    Abstract: CHMC 37
    Text: 5 7 . SGS-THOMSON M Ê iœ iL iC T l iÊ S W .A .R .P . 1 .1 W E IG H T ASSOCIATIVE RULE PRO C ESSO R ADVANCED DATA • H igh spe e d Rules Processing ■ Antecedent Membership Functions with any Shape ■ Up to 256 Rules 4 Antecedents, 1 Consequent ■ Up to 16 Input Configurable Variables


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    PDF 100-pin CPGA100 84-lead PLCC84 mte maxim CHMC 37