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for1a Abstract: 2SJ132 PVS100 K020 Contextual Info: N E C ELECTRONICS INC 642752 5 N E C Tfl ELEC TR ONI CS INC DE \| b 4 5 7 S E S 98D 19031 NEC MOS FIELD OOITDHI 2 2J±a2 0 . 5 = 0.1 J3 Absolute Maximum Ratings Ta=25*C Drain to Source Voltage YDSS . -30V Gate to Source Voltage VGSS ± 20V Continuous Drain Current	OCR Scan	b457SES 2SJ132 PVS100 DlciD34 CHASACTE21STICS J22686 for1a 2SJ132 PVS100 K020	PDF
Contextual Info: N E C ELE CTR ON IC S INC 6 4 2 7 5 2 5 N E C E L E C T R O N I C S INC Tfl MOS dF \| bi»57SaS OOITDHI S \| ~ 9 8 D 19031 D j FIELD EFFECT TRANSISTOR ELECTRON DEVICE \ _ FAST SWITCHING P-CHANNEL S IL IC O N POWER 2J±a2 s.o±a 2 zi FET	OCR Scan	57SaS CHASACTE21STICS	PDF

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Abstract: 2SJ132 PVS100 K020
Contextual Info: N E C ELECTRONICS INC 642752 5 N E C Tfl ELEC TR ONI CS INC DE | b 4 5 7 S E S 98D 19031 NEC MOS FIELD OOITDHI 2 2J±a2 0 . 5 = 0.1 J3 Absolute Maximum Ratings Ta=25*C Drain to Source Voltage YDSS . -30V Gate to Source Voltage VGSS ± 20V Continuous Drain Current

OCR Scan

b457SES 2SJ132 PVS100 DlciD34 CHASACTE21STICS J22686 for1a 2SJ132 PVS100 K020

PDF

Contextual Info: N E C ELE CTR ON IC S INC 6 4 2 7 5 2 5 N E C E L E C T R O N I C S INC Tfl MOS dF | bi»57SaS OOITDHI S | ~ 9 8 D 19031 D j FIELD EFFECT TRANSISTOR ELECTRON DEVICE \ _ FAST SWITCHING P-CHANNEL S IL IC O N POWER 2J±a2 s.o±a 2 zi FET

OCR Scan

57SaS CHASACTE21STICS

PDF