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    CHANGE TRANSISTOR PARAMETERS Search Results

    CHANGE TRANSISTOR PARAMETERS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    CHANGE TRANSISTOR PARAMETERS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 13 Neptune Ave. Brooklyn NY 11235 Tel. 718 934-4500 Fax. (718) 332-4661 Website: www.minicircuits.com PRODUCT CHANGE NOTICE PCN Form (D4-E000-73) PCN# 15-026 NOTIFICATION DATE: May 13, 2015 MODEL(S) AFFECTED: ROS-480+ EXTENT OF CHANGE: 1. Replacement of supplied transistor and varactor diode based on discontinuation of supply with alternate,


    Original     		PDF D4-E000-73) ROS-480+ 10kHz PCN15-026 M135112 D3-E040

    Dielectric Resonator Oscillator DRO

    Abstract: yig oscillator application note yig tuned oscillator A008 amplifier TRANSISTOR AT-41400 dielectric resonator Catalog Bipolar Transistor yig oscillator A008 ATF-26836
    Text: Microwave Oscillator Design Application Note A008 NOTE: This publication is a reprint of a previously published Application Note and is for technical reference only. Note that since the transistor s parameters change with frequency, k also varies with frequency.


    Original     		PDF 5968-3628E Dielectric Resonator Oscillator DRO yig oscillator application note yig tuned oscillator A008 amplifier TRANSISTOR AT-41400 dielectric resonator Catalog Bipolar Transistor yig oscillator A008 ATF-26836

    Untitled

    Abstract: No abstract text available
    Text: 13 Neptune Ave. Brooklyn NY 11235 Tel. 718 934-4500 Fax. (718) 332-4661 Website: www.minicircuits.com PRODUCT CHANGE NOTICE PCN Form (D4-E000-73) PCN#15-027 NOTIFICATION DATE: May 13, 2015 MODEL(S) AFFECTED: JTOS-1300+ EXTENT OF CHANGE: 1. Replacement of supplied transistor and varactor diode based on discontinuation of supply with alternate,


    Original     		PDF D4-E000-73) JTOS-1300+ PCN15-027 M135112 D3-E040

    Untitled

    Abstract: No abstract text available
    Text: 13 Neptune Ave. Brooklyn NY 11235 Tel. 718 934-4500 Fax. (718) 332-4661 Website: www.minicircuits.com PRODUCT CHANGE NOTICE PCN Form (D4-E000-73) PCN#15-037 NOTIFICATION DATE: June 12, 2015 MODEL(S) AFFECTED: ROS-3800+ & ZX95-3800-S+ EXTENT OF CHANGE: 1. Replacement of supplied transistor and varactor diode based on discontinuation of supply with alternate,


    Original     		PDF D4-E000-73) ROS-3800+ ZX95-3800-S+ 100kHz PCN15-037 M135112 D3-E040

    Untitled

    Abstract: No abstract text available
    Text: 13 Neptune Ave. Brooklyn NY 11235 Tel. 718 934-4500 Fax. (718) 332-4661 Website: www.minicircuits.com PRODUCT CHANGE NOTICE PCN Form (D4-E000-73) PCN# 15-008 NOTIFICATION DATE: March 3, 2015 MODEL(S) AFFECTED: ROS-3250-519+ ZX95-3250+ EXTENT OF CHANGE: 1. Replacement of supplied transistor and varactor diode based on discontinuation of supply with alternate,


    Original     		PDF D4-E000-73) ROS-3250-519+ ZX95-3250+ PCN15-008 M135112 D3-E040

    318d

    Abstract: No abstract text available
    Text: MSD602-RT1G, SMSD602-RT1G NPN General Purpose Amplifier Transistor Surface Mount http://onsemi.com Features • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable


    Original     		PDF MSD602-RT1G, SMSD602-RT1G MSD602â 318d

    SPZT3904T1G

    Abstract: transistor marking 1am
    Text: PZT3904T1G, SPZT3904T1G General Purpose Transistor NPN Silicon http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements SOT−223 CASE 318E


    Original     		PDF PZT3904T1G, SPZT3904T1G AEC-Q101 OT-223 PZT3904T1/D transistor marking 1am

    Untitled

    Abstract: No abstract text available
    Text: PZT3904T1G, SPZT3904T1G General Purpose Transistor NPN Silicon http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements SOT−223 CASE 318E


    Original     		PDF PZT3904T1G, SPZT3904T1G PZT3904T1/D

    Untitled

    Abstract: No abstract text available
    Text: PZTA92T1G, NSVPZTA92T1G High Voltage Transistor PNP Silicon http://onsemi.com Features • Complement to PZTA42T1G • NSV Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable


    Original     		PDF PZTA92T1G, NSVPZTA92T1G PZTA42T1G PZTA92T1/D

    SMMBT5401LT1G

    Abstract: MMBT5401LT1G
    Text: MMBT5401LT1G, SMMBT5401LT1G, MMBT5401LT3G High Voltage Transistor PNP Silicon http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements SOT−23 TO−236


    Original     		PDF MMBT5401LT1G, SMMBT5401LT1G, MMBT5401LT3G AEC-Q101 OT-23 O-236) MMBT5401LT1/D SMMBT5401LT1G MMBT5401LT1G

    Untitled

    Abstract: No abstract text available
    Text: MBT2222ADW1, NSVBT2222ADW1 General Purpose Transistor NPN Silicon http://onsemi.com Features • Moisture Sensitivity Level: 1 • NSV Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable


    Original     		PDF MBT2222ADW1, NSVBT2222ADW1 AEC-Q101 SC-88/SC70-6/SOT-363 MBT2222ADW1T1/D

    Untitled

    Abstract: No abstract text available
    Text: PZTA42T1G High Voltage Transistor Surface Mount NPN Silicon http://onsemi.com Features • PZTA42T1G is Complement to PZTA92T1G • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements; AEC−Q101 Qualified and


    Original     		PDF PZTA42T1G PZTA92T1G AEC-Q101 OT-223 PZTA42T1/D

    Untitled

    Abstract: No abstract text available
    Text: MMBT5401LT1G, SMMBT5401LT1G, MMBT5401LT3G High Voltage Transistor PNP Silicon http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements SOT−23 TO−236


    Original     		PDF MMBT5401LT1G, SMMBT5401LT1G, MMBT5401LT3G AEC-Q101 OT-23 O-236) MMBT5401LT1/D

    Untitled

    Abstract: No abstract text available
    Text: MMBT5401LT1G, SMMBT5401LT1G, MMBT5401LT3G High Voltage Transistor PNP Silicon http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements SOT−23 TO−236


    Original     		PDF MMBT5401LT1G, SMMBT5401LT1G, MMBT5401LT3G MMBT5401LT1/D

    LMBT4401WT1G

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.


    Original     		PDF AEC-Q101 LMBT4401WT1G S-LMBT4401WT1G LMBT4401WT3G S-LMBT4401WT3G 3000/Tape 10000/Tape SC-70 LMBT4401WT1G

    Untitled

    Abstract: No abstract text available
    Text: MBT35200MT1 High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements


    Original     		PDF MBT35200MT1 AEC-Q101 MBT35200MT1/D

    Untitled

    Abstract: No abstract text available
    Text: MMBFJ309L, MMBFJ310L, SMMBFJ310L JFET - VHF/UHF Amplifier Transistor N−Channel http://onsemi.com Features 2 SOURCE • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • 3 GATE Site and Control Change Requirements


    Original     		PDF MMBFJ309L, MMBFJ310L, SMMBFJ310L MMBFJ309LT1/D

    transistor y21 sot-23

    Abstract: MMBFJ310LT1G SMMBFJ310LT1G Y22 SOT23 S12 sot 23-6
    Text: MMBFJ309L, MMBFJ310L, SMMBFJ310L JFET - VHF/UHF Amplifier Transistor N−Channel http://onsemi.com Features 2 SOURCE • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • 3 GATE Site and Control Change Requirements


    Original     		PDF MMBFJ309L, MMBFJ310L, SMMBFJ310L AEC-Q101 OT-23 O-236) MMBFJ309LT1/D transistor y21 sot-23 MMBFJ310LT1G SMMBFJ310LT1G Y22 SOT23 S12 sot 23-6

    Untitled

    Abstract: No abstract text available
    Text: MMBFJ309L, MMBFJ310L, SMMBFJ310L JFET - VHF/UHF Amplifier Transistor N−Channel http://onsemi.com Features 2 SOURCE • Drain and Source are Interchangeable • S Prefix for Automotive and Other Applications Requiring Unique • 3 GATE Site and Control Change Requirements; AEC−Q101 Qualified and


    Original     		PDF MMBFJ309L, MMBFJ310L, SMMBFJ310L AEC-Q101 OT-23 O-236) MMBFJ309LT1/D

    Untitled

    Abstract: No abstract text available
    Text: BF720T1G, SBF720T1G, BF720T3G NPN Silicon Transistor Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique  Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original     		PDF BF720T1G, SBF720T1G, BF720T3G BF720T1/D

    Untitled

    Abstract: No abstract text available
    Text: MMBT5087L Low Noise Transistor PNP Silicon Features • NSV Prefix for Automotive and Other Applications Requiring • http://onsemi.com Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original     		PDF MMBT5087L MMBT5087LT1/D

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site LMBT4401LT1G S-LMBT4401LT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.


    Original     		PDF LMBT4401LT1G S-LMBT4401LT1G AEC-Q101 LMBT4401LT3G S-LMBT4401LT3G 3000/Tape 10000/Tape LMBT4401LT1G

    Untitled

    Abstract: No abstract text available
    Text: BSS63LT1G, NSVBSS63LT1G High Voltage Transistor PNP Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS • COLLECTOR 3 Compliant NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101


    Original     		PDF BSS63LT1G, NSVBSS63LT1G AEC-Q101 BSS63LT1/D

    SMMBT4403LT1G

    Abstract: SMMBT4403L
    Text: MMBT4403L, SMMBT4403L Switching Transistor PNP Silicon Features • S Prefix for Automotive and Other Applications Requiring Unique • http://onsemi.com Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original     		PDF MMBT4403L, SMMBT4403L AEC-Q101 OT-23 O-236) MMBT4403LT1/D SMMBT4403LT1G