CH72SD Search Results

Contextual Info: TOSHIBA O I S C R E T E / O P T O J D e J i DTTESO 001ti71G 9097250 TOSHIBA DISCRETE/OPTO ¿ /o ó h ìh i 990 16710 DT-S^-VI SEMICONDUCTOR TOSHIBA FIELD EFFECT TRANSISTOR TECHNICAL DATA SILICON N CHANNEL MOS TYPE 2 S K 5 3 7 INDUSTRIAL APPLICATIONS Unit in mm

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM6472-4L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 25 dBm, - Single carrier level • High power - P ld B = 36 dBm at 6.4 GHz to 7.2 GHz

transistor 16870

Abstract: 16870 transistor tr/1/16870 transistor
Contextual Info: TOSHIBA OISCRETE/OPTO} 9097250 TOSHIBA ¿/oshiht Ti DISCRETE/OPTO 99D 16870 D / TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR Y T F-6 3 1 SILICON N CHANNEL.MOS TYPE TECHNICAL DATA ( 71 - M O S I ) INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.