CGS RESISTOR C14 Search Results

cgs resistor c7

Abstract: CGS C14 cgs resistor c14 Meggitt CGS 1 R/cgs resistor c7 CGS 1R0
Contextual Info: MEGGITT CGS HIGH VOLTAGE RESISTORS HIGH VALUE RESISTORS HIGH POWER RESISTORS ALUMINIUM CLAD RESISTORS CURRENT SENSE RESISTORS High Power Resistors TYPE C SERIES Meggitt CGS has manufactured the 'C' Series of Vitreous Enamelled Wirewound Resistors for more than

Contextual Info: ISL6113, ISL6114 Data Sheet September 25, 2007 FN6457.0 Dual Slot PCI-E Hot Plug Controllers Features The ISL6113, ISL6114 both target the PCI-Express Add-in card hot swap application. Together with a pair of N-Channel and P-Channel MOSFETs, and two sense resistors per slot, either

IRZ 40

Abstract: pci-e 98 pins pcb layout PCI-Express 2.0 X8 connector Pinout IRZ 46 graphic card circuit diagram ISL6113 l48 diode marking x16 MOSFET marking -ddr -sdram -rimm -sram -fla ISL6112 ISL6114
Contextual Info: ISL6113, ISL6114 Data Sheet September 25, 2007 FN6457.0 Dual Slot PCI-E Hot Plug Controllers Features The ISL6113, ISL6114 both target the PCI-Express Add-in card hot swap application. Together with a pair of N-Channel and P-Channel MOSFETs, and two sense resistors per slot, either

k1206

Abstract: cgs resistor c7 A123 transistor l2 k1206 220 r3
Contextual Info: e PTF 10120 120 Watts, 1.8–2.0 GHz LDMOS Field Effect Transistor Description The 10120 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 120 watts minimum

k1206

Abstract: G200 LDMOS transistor 1W
Contextual Info: PTF 10120 120 Watts, 1.8–2.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10120 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 120 watts power output.

k1206

Abstract: k1206 220 r3 cgs resistor G200
Contextual Info: PTF 10125 135 Watts, 1.4–1.6 GHz GOLDMOS Field Effect Transistor Description The PTF 10125 is an internally matched 135–watt GOLDMOS FET intended for linear driver and final applications from 1.4 to 1.6 GHz such as DAB/DRB. It operates at 40% efficiency with 12.5 dB typical

k1206

Abstract: RF Transistor 1500 MHZ
Contextual Info: PTF 10125 135 Watts, 1.4–1.6 GHz GOLDMOS Field Effect Transistor Description • The PTF 10125 is an internally matched, common source N-channel enhancement-mode lateral MOSFET intended for linear driver and final applications from 1.4 to 1.6 GHz, such as DAB/DRB. Rated output power is 135 watts. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.

10125

Abstract: G200 K1206 rf mosfet ericsson
Contextual Info: PTF 10125 135 Watts, 1.4–1.6 GHz GOLDMOS Field Effect Transistor Description • The PTF 10125 is an internally matched, common source N-channel enhancement-mode lateral MOSFET intended for linear driver and final applications from 1.4 to 1.6 GHz, such as DAB/DRB. It is rated

J120 MOSFET

Abstract: J115 mosfet AN211A MRF175LU VK200 MOSFET J140
Contextual Info: Order this document by MRF175LU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175LU N–Channel Enhancement–Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and

Contextual Info: Dual Slot PCI-Express Hot Plug Controller ISL6112 Features The ISL6112 targets the PCI-Express add-in card hot plug application. Together with two each of N-Channel and P-Channel MOSFETs, four current sense resistors, and several external passive components, the ISL6112 provides a

smd capa

Abstract: p33k
Contextual Info: Package 20275 120 Watts, 2110-2170 MHz PUSH/PULL LATERAL MOSFET PD21120R6 Description Key Features The PD21120R6 is a 120–watt, internally matched LDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This device typically operates at 48% efficiency P-1dB and 14 dB linear gain. Full gold

MRF1550

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1550T1 is designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband

Contextual Info: 120 Watts, 2110-2170 MHz GOLDMOS Field Effect Transistor PTF 102003 Description Key Features The PTF 102003 is a 120–watt, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This device typically operates at 48% efficiency P-1dB and 14 dB linear gain. Full gold

capicitor

Abstract: smd transistor 513 500 watts amplifier schematic diagram transistor SMD LOA G200 PCC103BNCT-ND smd L19
Contextual Info: PTF 10161 165 Watts, 869–894 MHz GOLDMOS Field Effect Transistor Description The PTF 10161 is an internally matched,165 watt GOLDMOS FET intended for large signal amplifier applications from 869 to 894 MHz. It typically operates with 50% efficiency and 16 db of gain. Nitride

48 Ohms Resistors CGS

Abstract: PTF102003 600B microstrip resistor PCC103BCT
Contextual Info: 375D–03, STYLE 1 Package 20275 120 Watts, 21 10-2170 MHz PUSH/PULL LATERAL MOSFET PTF102003 Description Key Features The PTF102003 is a 120–watt, internally matched LDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This device typically operates at 48% efficiency P-1dB and 14 dB linear gain. Full gold

VK200 20/4B inductor

Abstract: VK200 inductor of high frequencies VK200 4B inductor 100 watt hf mosfet 12 volt IN 965 b zener diode AN211A MRF175LU MRF175LV VK200 Nippon capacitors
Contextual Info: MOTOROLA Order this document by MRF175LU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175LU MRF175LV N–Channel Enhancement–Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and

Contextual Info: MOTOROLA Order this document by MRF175LU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175LU MRF175LV N–Channel Enhancement–Mode . . . designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and

inductor vk200

Abstract: VK200 20/4B inductor VK200 inductor of high frequencies AN211A MRF175LU MRF175LV VK200 J115 mosfet Nippon capacitors VK200 4B inductor
Contextual Info: MOTOROLA Order this document by MRF175LU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175LU MRF175LV N–Channel Enhancement–Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and

MRF1550F

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices

MOTOROLA LINEAR HF

Abstract: MRF175LV Nippon capacitors MRF175
Contextual Info: MOTOROLA Order this document by MRF175LU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and

Contextual Info: MOTOROLA Order this document by MRF175LU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175LU MRF175LV N–Channel Enhancement–Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and

MRF1550N

Contextual Info: Freescale Semiconductor Technical Data Rev. 7, 1/2005 RF Power Field Effect Transistors MRF1550NT1 MRF1550FNT1 MRF1550T1 MRF1550FT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices

EB209

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1550T1 is designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband

25Wx4

Abstract: PCI-Express 2.0 X8 connector Pinout ISL6112 ISL6112EVAL1Z ISL6112INZA ISL6112INZA-T ISL6112IRZA ISL6112IRZA-T MIC2592B-2YTQ TPS2363
Contextual Info: ISL6112 Data Sheet September 28, 2007 FN6456.0 Dual Slot PCI-Express Power Controller Features The ISL6112 targets the PCI-Express add-in card hot plug application. Together with two each of N-Channel and P-Channel MOSFETs, four current sense resistors and