cgs resistor c7
Abstract: CGS C14 cgs resistor c14 Meggitt CGS 1 R/cgs resistor c7 CGS 1R0
Text: MEGGITT CGS HIGH VOLTAGE RESISTORS HIGH VALUE RESISTORS HIGH POWER RESISTORS ALUMINIUM CLAD RESISTORS CURRENT SENSE RESISTORS High Power Resistors TYPE C SERIES Meggitt CGS has manufactured the 'C' Series of Vitreous Enamelled Wirewound Resistors for more than
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Untitled
Abstract: No abstract text available
Text: ISL6113, ISL6114 Data Sheet September 25, 2007 FN6457.0 Dual Slot PCI-E Hot Plug Controllers Features The ISL6113, ISL6114 both target the PCI-Express Add-in card hot swap application. Together with a pair of N-Channel and P-Channel MOSFETs, and two sense resistors per slot, either
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ISL6113,
ISL6114
FN6457
ISL6114
5m-1994.
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IRZ 40
Abstract: pci-e 98 pins pcb layout PCI-Express 2.0 X8 connector Pinout IRZ 46 graphic card circuit diagram ISL6113 l48 diode marking x16 MOSFET marking -ddr -sdram -rimm -sram -fla ISL6112 ISL6114
Text: ISL6113, ISL6114 Data Sheet September 25, 2007 FN6457.0 Dual Slot PCI-E Hot Plug Controllers Features The ISL6113, ISL6114 both target the PCI-Express Add-in card hot swap application. Together with a pair of N-Channel and P-Channel MOSFETs, and two sense resistors per slot, either
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ISL6113,
ISL6114
FN6457
ISL6114
5m-1994.
IRZ 40
pci-e 98 pins pcb layout
PCI-Express 2.0 X8 connector Pinout
IRZ 46
graphic card circuit diagram
ISL6113
l48 diode marking
x16 MOSFET marking -ddr -sdram -rimm -sram -fla
ISL6112
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k1206
Abstract: cgs resistor c7 A123 transistor l2 k1206 220 r3
Text: e PTF 10120 120 Watts, 1.8–2.0 GHz LDMOS Field Effect Transistor Description The 10120 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 120 watts minimum
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K1206
G-200,
1-877-GOLDMOS
1301-PTF
k1206
cgs resistor c7
A123
transistor l2
k1206 220 r3
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k1206
Abstract: G200 LDMOS transistor 1W
Text: PTF 10120 120 Watts, 1.8–2.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10120 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 120 watts power output.
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K1206
1-877-GOLDMOS
1301-PTF
k1206
G200
LDMOS transistor 1W
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k1206
Abstract: k1206 220 r3 cgs resistor G200
Text: PTF 10125 135 Watts, 1.4–1.6 GHz GOLDMOS Field Effect Transistor Description The PTF 10125 is an internally matched 135–watt GOLDMOS FET intended for linear driver and final applications from 1.4 to 1.6 GHz such as DAB/DRB. It operates at 40% efficiency with 12.5 dB typical
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K1206
1-877-GOLDMOS
1522-PTF
k1206
k1206 220 r3
cgs resistor
G200
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k1206
Abstract: RF Transistor 1500 MHZ
Text: PTF 10125 135 Watts, 1.4–1.6 GHz GOLDMOS Field Effect Transistor Description • The PTF 10125 is an internally matched, common source N-channel enhancement-mode lateral MOSFET intended for linear driver and final applications from 1.4 to 1.6 GHz, such as DAB/DRB. Rated output power is 135 watts. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.
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K1206
G-200,
1-877-GOLDMOS
1301-PTF
RF Transistor 1500 MHZ
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10125
Abstract: G200 K1206 rf mosfet ericsson
Text: PTF 10125 135 Watts, 1.4–1.6 GHz GOLDMOS Field Effect Transistor Description • The PTF 10125 is an internally matched, common source N-channel enhancement-mode lateral MOSFET intended for linear driver and final applications from 1.4 to 1.6 GHz, such as DAB/DRB. It is rated
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K1206
1-877-GOLDMOS
1301-PTF
10125
G200
K1206
rf mosfet ericsson
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J120 MOSFET
Abstract: J115 mosfet AN211A MRF175LU VK200 MOSFET J140
Text: Order this document by MRF175LU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175LU N–Channel Enhancement–Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and
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MRF175LU/D
MRF175LU
J120 MOSFET
J115 mosfet
AN211A
MRF175LU
VK200
MOSFET J140
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Untitled
Abstract: No abstract text available
Text: Dual Slot PCI-Express Hot Plug Controller ISL6112 Features The ISL6112 targets the PCI-Express add-in card hot plug application. Together with two each of N-Channel and P-Channel MOSFETs, four current sense resistors, and several external passive components, the ISL6112 provides a
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ISL6112
ISL6112
5m-1994.
FN6456
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smd capa
Abstract: p33k
Text: Package 20275 120 Watts, 2110-2170 MHz PUSH/PULL LATERAL MOSFET PD21120R6 Description Key Features The PD21120R6 is a 120–watt, internally matched LDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This device typically operates at 48% efficiency P-1dB and 14 dB linear gain. Full gold
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PD21120R6
PD21120R6
PCS6106TR
PCC103BCT
1/16W
smd capa
p33k
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MRF1550
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1550T1 is designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband
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MRF1550T1
AN215A,
MRF1550
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Untitled
Abstract: No abstract text available
Text: 120 Watts, 2110-2170 MHz GOLDMOS Field Effect Transistor PTF 102003 Description Key Features The PTF 102003 is a 120–watt, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This device typically operates at 48% efficiency P-1dB and 14 dB linear gain. Full gold
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1/16W
1-877-GOLDMOS
1522-PTF
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capicitor
Abstract: smd transistor 513 500 watts amplifier schematic diagram transistor SMD LOA G200 PCC103BNCT-ND smd L19
Text: PTF 10161 165 Watts, 869–894 MHz GOLDMOS Field Effect Transistor Description The PTF 10161 is an internally matched,165 watt GOLDMOS FET intended for large signal amplifier applications from 869 to 894 MHz. It typically operates with 50% efficiency and 16 db of gain. Nitride
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220QBK-ND
1-877-GOLDMOS
1522-PTF
capicitor
smd transistor 513
500 watts amplifier schematic diagram
transistor SMD LOA
G200
PCC103BNCT-ND
smd L19
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48 Ohms Resistors CGS
Abstract: PTF102003 600B microstrip resistor PCC103BCT
Text: 375D–03, STYLE 1 Package 20275 120 Watts, 21 10-2170 MHz PUSH/PULL LATERAL MOSFET PTF102003 Description Key Features The PTF102003 is a 120–watt, internally matched LDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This device typically operates at 48% efficiency P-1dB and 14 dB linear gain. Full gold
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PTF102003
PTF102003
PCS6106TR
PCC103BCT
1/16W
48 Ohms Resistors CGS
600B
microstrip resistor
PCC103BCT
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VK200 20/4B inductor
Abstract: VK200 inductor of high frequencies VK200 4B inductor 100 watt hf mosfet 12 volt IN 965 b zener diode AN211A MRF175LU MRF175LV VK200 Nippon capacitors
Text: MOTOROLA Order this document by MRF175LU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175LU MRF175LV N–Channel Enhancement–Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and
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MRF175LU/D
MRF175LU
MRF175LV
MRF175LU
MRF175LU/D*
VK200 20/4B inductor
VK200 inductor of high frequencies
VK200 4B inductor
100 watt hf mosfet 12 volt
IN 965 b zener diode
AN211A
MRF175LV
VK200
Nippon capacitors
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF175LU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175LU MRF175LV N–Channel Enhancement–Mode . . . designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and
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MRF175LU/D
MRF175LU
MRF175LV
10orola
MRF175LU
MRF175LU/D*
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inductor vk200
Abstract: VK200 20/4B inductor VK200 inductor of high frequencies AN211A MRF175LU MRF175LV VK200 J115 mosfet Nippon capacitors VK200 4B inductor
Text: MOTOROLA Order this document by MRF175LU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175LU MRF175LV N–Channel Enhancement–Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and
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MRF175LU/D
MRF175LU
MRF175LV
MRF175LU
MRF175LU/D*
inductor vk200
VK200 20/4B inductor
VK200 inductor of high frequencies
AN211A
MRF175LV
VK200
J115 mosfet
Nippon capacitors
VK200 4B inductor
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MRF1550F
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices
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AN215A,
MRF1550T1
MRF1550FT1
MRF1550F
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MOTOROLA LINEAR HF
Abstract: MRF175LV Nippon capacitors MRF175
Text: MOTOROLA Order this document by MRF175LU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and
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MRF175LU/D
MRF175LU
MRF175LV
MRF175LU
MRF175LV
MRF175LU/D*
MRF175LU/D
MOTOROLA LINEAR HF
Nippon capacitors
MRF175
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF175LU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175LU MRF175LV N–Channel Enhancement–Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and
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MRF175LU/D
MRF175LU
MRF175LV
MRF175LU
MRF175LU/D*
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MRF1550N
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Rev. 7, 1/2005 RF Power Field Effect Transistors MRF1550NT1 MRF1550FNT1 MRF1550T1 MRF1550FT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices
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AN215A,
MRF1550NT1
MRF1550FNT1
MRF1550T1
MRF1550FT1
MRF1550N
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EB209
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1550T1 is designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband
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MRF1550T1
AN215A,
EB209
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25Wx4
Abstract: PCI-Express 2.0 X8 connector Pinout ISL6112 ISL6112EVAL1Z ISL6112INZA ISL6112INZA-T ISL6112IRZA ISL6112IRZA-T MIC2592B-2YTQ TPS2363
Text: ISL6112 Data Sheet September 28, 2007 FN6456.0 Dual Slot PCI-Express Power Controller Features The ISL6112 targets the PCI-Express add-in card hot plug application. Together with two each of N-Channel and P-Channel MOSFETs, four current sense resistors and
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ISL6112
FN6456
ISL6112
25Wx4
PCI-Express 2.0 X8 connector Pinout
ISL6112EVAL1Z
ISL6112INZA
ISL6112INZA-T
ISL6112IRZA
ISL6112IRZA-T
MIC2592B-2YTQ
TPS2363
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