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    Text: PRELIMINARY CGHV22150MP 150 W, 1800-2200 MHz, 50 V, GaN HEMT for LTE Cree’s CGHV22150MP is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22150MP ideal for 1.8 2.2 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is


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