Datasheet Archive: CGH60015D datasheets

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MACOM CGH60015D-GP4 GaN FETs GaN HEMT Die DC-6.0GHz, 15 Watt
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	CGH60015D-GP4		50			1 - 10 $114.23 100 $85.67 1000 $85.67 10000 $85.67	Buy Now
Richardson RFPD	CGH60015D-GP4				10	1 - 10 $114.23 100 $114.23 1000 $114.23 10000 $114.23	Buy Now

CGH60015D Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
CGH60015D-GP4		Cree/Wolfspeed	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET HEMT 28V DIE		Original	PDF

CGH60015D Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
CGH60015D Abstract: bonding wire cree Contextual Info: CGH60015D 15 W, 6.0 GHz, GaN HEMT Die Cree’s CGH60015D is a gallium nitride GaN High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,	Original	CGH60015D CGH60015D CGH6001 bonding wire cree	PDF
Contextual Info: CGH60015D 15 W, 6.0 GHz, GaN HEMT Die Cree’s CGH60015D is a gallium nitride GaN High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,	Original	CGH60015D CGH60015D CGH6001	PDF
CGH40025P Abstract: CGH40010P cgh60015 GaN ADS Gan hemt transistor x band cgh40120F cgh40045f CGH60015D CGH60060D CGH60030D cgh60120D Contextual Info: General Purpose Wide Bandgap Transistors Gallium Nitride GaN HEMTs for Broadband Applications Broadband performance - Enables high power, multi-octave bandwidth amplifiers This “general purpose” discrete device series features Cree’s GaN HEMTs. These unmatched packaged transistors	Original		PDF

Catalog Datasheet

Type

Document Tags

PDF

CGH60015D

Abstract: bonding wire cree
Contextual Info: CGH60015D 15 W, 6.0 GHz, GaN HEMT Die Cree’s CGH60015D is a gallium nitride GaN High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,

Original

CGH60015D CGH60015D CGH6001 bonding wire cree

PDF

Contextual Info: CGH60015D 15 W, 6.0 GHz, GaN HEMT Die Cree’s CGH60015D is a gallium nitride GaN High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,

Original

CGH60015D CGH60015D CGH6001

PDF

CGH40025P

Abstract: CGH40010P cgh60015 GaN ADS Gan hemt transistor x band cgh40120F cgh40045f CGH60015D CGH60060D CGH60030D cgh60120D
Contextual Info: General Purpose Wide Bandgap Transistors Gallium Nitride GaN HEMTs for Broadband Applications Broadband performance - Enables high power, multi-octave bandwidth amplifiers This “general purpose” discrete device series features Cree’s GaN HEMTs. These unmatched packaged transistors

Original

PDF

CGH60015D Search Results

CGH60015D Price and Stock

MACOM CGH60015D-GP4

CGH60015D Datasheets (1)

CGH60015D Datasheets Context Search

CGH60015D

CGH40025P