A 3120 optocoupler
Abstract: A 3150 optocoupler induction cooker block diagrams A 3150 igbt driver Optocoupler HP 3120 IC A 3120 igbt drive A J312 a 314j inverter IGBT driver hcpl3120 j312
Text: Main Applications and Selection of Gate Driver Optocouplers Application Note 1335 Introduction IGBTs are now commonly used as switching components in both inverter and converter circuits, which are used in power control and motor drive applications. A typical
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5988-8560EN
5988-9009EN
A 3120 optocoupler
A 3150 optocoupler
induction cooker block diagrams
A 3150 igbt driver
Optocoupler HP 3120
IC A 3120 igbt drive
A J312
a 314j
inverter IGBT driver hcpl3120
j312
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Untitled
Abstract: No abstract text available
Text: MIC95410 6.6mΩ RDS ON , 7A, 5.5V VIN Load Switch in 1.2mm x 2.0mm QFN Package General Description Features The MIC95410 is a high-side load switch for computing and ultra-dense embedded computing boards where highcurrent low-voltage rails from sub-1V to 5.5V have to be
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MIC95410
MIC95410
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IRGPH50K
Abstract: IRG4PH50K IRGPH50M
Text: PD - 9.1576 IRG4PH50K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C ● High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V, TJ = 125°C, VGE = 15V ● Combines low conduction losses with high switching speed
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IRG4PH50K
IRGPH50K
IRG4PH50K
IRGPH50M
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTK920T TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR RF Switching for VCR Tuner FEATURES E Low loss at on state Typ 1dB@1GHz B DIM MILLIMETERS _ 0.2 2.9 + A With built-in bias diode 1 4 B F A C 3 2.8+0.2/-0.3 _ 0.2 1.9 + _ 0.05 0.16 +
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KTK920T
100MHz
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diode 1GHz
Abstract: KTK920BU FET MARKING
Text: SEMICONDUCTOR KTK920BU TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR RF Switching for VCR Tuner FEATURES Low loss at on state Typ 1dB@1GHz E M B M 4 2 3 D J 1 H L C A With built-in bias diode N K N DIM A B C D E H J K L M N MILLIMETERS _ 0.20 2.00 +
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KTK920BU
100MHz
diode 1GHz
KTK920BU
FET MARKING
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTK920T TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR RF Switching for VCR/DVD/SET Top Box Tuner FEATURES E ・Low loss at on state Typ 1dB@1GHz B DIM MILLIMETERS _ 0.2 A 2.9 + ・With built-in bias diode 1 4 B 3 D _ 0.1 0.4 + E F G H
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KTK920T
100MHz
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KTK920BT
Abstract: No abstract text available
Text: SEMICONDUCTOR KTK920BT TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR RF Switching for VCR Tuner FEATURES E Low loss at on state Typ 1dB@1GHz B DIM MILLIMETERS _ 0.2 A 2.9 + With built-in bias diode 1 4 B 3 D _ 0.1 0.4 + E F G H I J K 2.8+0.2/-0.3 _ 0.2
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KTK920BT
100MHz
KTK920BT
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KTK920T
Abstract: fet diode
Text: SEMICONDUCTOR KTK920T TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR RF Switching for VCR Tuner FEATURES E Low loss at on state Typ 1dB@1GHz B DIM MILLIMETERS _ 0.2 A 2.9 + With built-in bias diode 1 4 B 3 D _ 0.1 0.4 + E F G H I J K 2.8+0.2/-0.3 _ 0.2
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KTK920T
100MHz
KTK920T
fet diode
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Untitled
Abstract: No abstract text available
Text: PD - 95173A IRG4BC30WPbF INSULATED GATE BIPOLAR TRANSISTOR Features Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications Industry-benchmark switching losses improve efficiency of all power supply topologies 50% reduction of Eoff parameter
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5173A
IRG4BC30WPbF
O-220AB
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KTK921
Abstract: KTK921U fet diode diode 1GHz
Text: SEMICONDUCTOR KTK921U TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR RF Switching for VCR/DVD/Set Top Box Tuner FEATURES Low loss at on state Typ 1dB@1GHz E M With built-in bias diode 4 2 3 D J 1 H L C A Gate 3.3V operating M B N N K DIM A B C D E H
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KTK921U
100MHz
KTK921
KTK921U
fet diode
diode 1GHz
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IRG4PH50K
Abstract: IRGPH50K IRGPH50M
Text: PD - 9.1576 IRG4PH50K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C ● High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V, TJ = 125°C, VGE = 15V ● Combines low conduction losses with high switching speed
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IRG4PH50K
IRG4PH50K
IRGPH50K
IRGPH50M
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KTK920U
Abstract: No abstract text available
Text: SEMICONDUCTOR KTK920U TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR RF Switching for VCR Tuner FEATURES Low loss at on state Typ 1dB@1GHz E M B M 4 2 3 D J 1 H L C A With built-in bias diode N N K DIM A B C D E H J K L M N MILLIMETERS _ 0.20 2.00 +
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KTK920U
100MHz
KTK920U
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IRG4BC30WPBF
Abstract: No abstract text available
Text: PD - 95173A IRG4BC30WPbF INSULATED GATE BIPOLAR TRANSISTOR Features Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications Industry-benchmark switching losses improve efficiency of all power supply topologies 50% reduction of Eoff parameter
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5173A
IRG4BC30WPbF
1504BC30WPbF
O-220AB
IRG4BC30WPBF
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2N5434
Abstract: S 5018 2N5432 2N5433 X2N5432 X2N5433 X2N5434
Text: CALOGIC CORP 4flE D • 000032b <3 ■ CGC N-Channel JFET Switch CORPORATION vJ T -3 S -Z S ’ 2N5432- 2N5434 FEATURES ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise noted • LOW fd*<on) • Excellent Switching • Low Cutoff Current Gate-Source Voltage. -25V
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4432E
000032b
2N5432-2N5434
100mA
400mA
10sec)
300ns,
4432S
00D0357
2N5434
S 5018
2N5432
2N5433
X2N5432
X2N5433
X2N5434
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226a surface mount diode
Abstract: TO-226A JPAD50 TO-92 CALOGIC D 92 M 03 DIODE JPAD20 JPAD200 XJPAD10 2411 sot23 XJPAD20
Text: JPAD5 /JPAD10 1JPAD20 /JPAD501JPAD100 /JPAD20C CALOGIC CORP Low Leakage Pico Amp Diodes 10 4 4 3 5 2 4flE D 0000424 • CGC caloric CORPORATION V JPAD5/JPAD10/JPAD20/JPAD50/JPAD100/JPAD200 DESCRIPTIO N FEATURES • Low Leakage . 5 pA JPAD5
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104435s
PAD5/JPAD10/JPAD20/JPAD50/JPAD100/JPAD200
JPAD10
JPAD20
JPAD50
JPAD100
JPAD200
OT-23
226a surface mount diode
TO-226A
JPAD50
TO-92 CALOGIC
D 92 M 03 DIODE
JPAD20
JPAD200
XJPAD10
2411 sot23
XJPAD20
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2N3824
Abstract: N-Channel JFET Switch TO72 package n-channel jfet
Text: 2N3824 CALOGIC 4öE CORP 1Û44322 D OOOOE^a 1 • CGC calori* N-ChannelJFET Switch CORPO RATIO N v 'T-ss-zs 2N3824 ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise noted FEATURES • rds<250 0 h m s • lD(off><0.1nA Gate-Source or Gate-Drain Voltage . -50V
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2N3824
-T-35
200oc
10sec)
300mW
2N3824
N-Channel JFET Switch
TO72 package n-channel jfet
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TMPZ84C011
Abstract: CTC 313 TMPZ84C011AF-6 TMPZ84C011AF MPUZ80-298 BM80-2 CST8.00MT 84c011 Toshiba TMPZ84C011 TMPZ84C011A
Text: TO SH IB A TMPZ84C011A TMPZ84C011AF-6 TLCS-Z80 MICROPROCESSOR 1. O V ERVIEW AND FEATURES The TMPZ84C011A is a high-performance CMOS 8-bit microprocessor that contains the functional peripherals such as counter timer circuit CTC parallel I/O port, and clock generator/controller (CGC) around the TLCS-Z80 MPU. This microprocessor
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TMPZ84C011A
TMPZ84C011AF-6
TLCS-Z80
TMPZ84C011A
100-pin
tZ84C011A
TMPZ84C011
CTC 313
TMPZ84C011AF
MPUZ80-298
BM80-2
CST8.00MT
84c011
Toshiba TMPZ84C011
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2N5018
Abstract: 2N5019 X2N5018 X2N5019
Text: CALOÛIC CORP 4ôE D lñM432E 000031b b CGC c a lo r o CORPORATION \J 2N5018/2N5019 P-Channel JFET Switch 2N5018/2N5019 ABSO LU TE MAXIMUM RATINGS T a - 25°C unless otherwise noted FEATURES • Low Insertion Loss • No Offset or Error Voltages Generated By Closed Switch
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M432E
000031b
2N5018/2N5019
10sec)
500mW
2N5018)
2N5019)
2N5018
2N5019
100ns
X2N5018
X2N5019
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SD5501
Abstract: 5B42 SD5501N XSD5501
Text: 46E D SD5501 CALO GI C CORP 1Ô4432B 0G00277 Q • CGC calcxrt N-Channel Depletion-Mode 4-Channel DMOS FETArray CORPORATION v T-SMl SD5501 FEATURES DESCRIPTION • • • • The SD5501 is manufactured utilizing Calogic’s proprietary high speed, low capacitance DMOS process featuring an
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164432B
0G00277
SD5501
SD5501
5B42
SD5501N
XSD5501
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35z5
Abstract: SD404 SD404BD SD404CY XSD404
Text: SD4Q4 CALOGIC MAE D CORP 1Ô4M3SS Ü0002SS 1 CGC . _ C U lO O Iv High Speed DMOS N-Channel Switch C O RPORATION V SD404 "T -35Z 5 FEATURES DESCRIPTION • • • • • • The SD404 is an N-Channel Enhancement Mode device processed with Calogic's ultra high speed lateral DMOS
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0002SS
SD404
-T-35Z5
SD404
35z5
SD404BD
SD404CY
XSD404
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U1899
Abstract: U1897 2n43 U1898
Text: U l897 -U 1899 CA LO GI C CORP 4ÖE ] „ •§ D D D 0 4D 1 fl ■ CGC N-Channel JFET Switch CORPORATION T -Î 9 -Z 5 U18S7-U1899 ABSO LU TE MAXIMUM RATINGS Ta = 25°C unless otherwise specified) FEATURES • Low Insertion Loss • No Error or Offset Voltage Generated By Closed Switch
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U18S7-U1899
U1897
U1898
U1899
1120U
2n43
U1898
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0F30
Abstract: CGC SWITCH PBTF
Text: OF=50±15 gl 02.5±O.O5 SAFETY STANDARD APPROVAL: W c5UM SM o LEVER SPECIFICATION 5 A 1 2 5 V A C 0 J L CU Ü UPPER H O U 9N G P8T ♦ Q F 30% TEflWINAL 8 r* w Strip / A o C d O i2 Natural Stack SA 25CWAC CVD€. CE. CGC SPRING PLATE 0 e c 2 / A o C d 0 l2
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126VAC
250VAC
DC500V
AC1000V
/A0C0012
KW4A05-6D165S
KW4A05-6D165
0F30
CGC SWITCH
PBTF
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C849
Abstract: C854 C853
Text: P D - 9.1073 bitemational [ros]Rectifier ÌRGBC40K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Short circuit rated - 10ps @ 125°C, V qe = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz
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RGBC40K
C-853
IRGBC40K
TQ-220AB
C-854
C849
C854
C853
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c331 transistor
Abstract: No abstract text available
Text: international ri“ HlRectifier P D -9.1024 IRGPC50M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10ps @ 125°C, V qe = 15V • Switching-ioss rating includes all 'tail" losses • Optimized for medium operating frequency 1 to
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IRGPC50M
10kHz)
C-333
S54SS
G020123
O-247AC
C-334
c331 transistor
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