CFB0303 Search Results

Contextual Info: CFB0303 hŒŠ‹@d ”„“Œ†@r„”Šˆ@l•žMn•Œ ˆ@g„a™@fet mŒ“ŒŸ@b˜•„‡…„”‡L@i”†N@QPWYU@r•†‘’ˆ @r‡NL@h•›™š•”L@tˆŸ„™@WWPYY †•“

CFB0303

Contextual Info: CFB0303 High Dynamic Range Low-Noise GaAs FET Advanced Product Information June 2002 1 of 2 Features ❏ Low-Noise Figure from 0.8 to 2.0 GHz ❏ High Gain ❏ High Intercept Point ❏ Highly Stable ❏ Easily Matched to 50Ω ❏ 70 mil Package ❏ PHEMT Material

CFB0303

Contextual Info: High Dynamic Range Low Noise GaAs FET CFB0303 August 2006 - Rev 03-Aug-06 Features Low-Noise Figure from 0.8 to 2.0 GHz High Gain High Intercept Point Highly Stable Easily Matched to 50 70 mil Package PHEMT Material Applications Cellular Base Stations PCS Base Stations

pseudomorphic HEMT

Abstract: CF003-03 Hemt transistor
Contextual Info: GaAs Pseudomorphic HEMT Transistor July 2008 - Rev 19-Jul-08 CF003-03 Features Low Noise Figure 1 dB @ 12 GHz High Gain: 10 dB at 12 GHz P1dB Power: 20 dBm Wafer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF003-03 GaAs-based transistor is a 600 um gate width,

Contextual Info: GaAs Pseudomorphic HEMT Transistor July 2008 - Rev 19-Jul-08 CF003-03 Features Low Noise Figure 1 dB @ 12 GHz High Gain: 10 dB at 12 GHz P1dB Power: 20 dBm Wafer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF003-03 GaAs-based transistor is a 600 um gate width,

xg1015-SE

Abstract: XB1013-qt CMM6001-BD CFP0103-SP CMM6004-BD XZ1003-QT XU1016 QH XP1073-BD XD1008-QH XP1035-BD
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