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    CEP3120 TRANSISTOR Search Results

    CEP3120 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LP395Z/LFT1
    		Texas Instruments Ultra Reliable Power Transistor 3-TO-92 Visit Texas Instruments Buy
    LM395T/NOPB
    		Texas Instruments Ultra Reliable Power Transistor 3-TO-220 0 to 125 Visit Texas Instruments Buy
    ULN2003ANS
    		Texas Instruments High-Voltage, High-Current Darlington Transistor Arrays 16-SO Visit Texas Instruments Buy
    ULQ2003ADRG4
    		Texas Instruments Darlington Transistor Arrays 16-SOIC Visit Texas Instruments
    LP395Z/NOPB
    		Texas Instruments Ultra Reliable Power Transistor 3-TO-92 -40 to 125 Visit Texas Instruments Buy

    CEP3120 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    CEP3120

    Contextual Info: CEP3120/CEB3120 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 40A,RDS ON = 15mΩ @VGS = 10V. RDS(ON) = 22mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired.


    Original     		CEP3120/CEB3120 O-220 O-263 CEP3120 PDF

    CEP3120

    Abstract: CEB3120 cep3120 TRANSISTOR
    Contextual Info: CEP3120/CEB3120 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 40A,RDS ON = 15mΩ @VGS = 10V. RDS(ON) = 22mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired.


    Original     		CEP3120/CEB3120 O-220 O-263 CEP3120 CEB3120 cep3120 TRANSISTOR PDF

    CEP3120

    Abstract: ceb3120
    Contextual Info: CEP3120/CEB3120 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 40A,RDS ON = 15mΩ @VGS = 10V. RDS(ON) = 22mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired.


    Original     		CEP3120/CEB3120 O-220 O-263 CEP3120 ceb3120 PDF