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    CEP3120 TRANSISTOR Search Results

    CEP3120 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    CEP3120 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    CEP3120

    Abstract: No abstract text available
    Text: CEP3120/CEB3120 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 40A,RDS ON = 15mΩ @VGS = 10V. RDS(ON) = 22mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired.


    Original     		CEP3120/CEB3120 O-220 O-263 CEP3120 PDF

    CEP3120

    Abstract: CEB3120 cep3120 TRANSISTOR
    Text: CEP3120/CEB3120 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 40A,RDS ON = 15mΩ @VGS = 10V. RDS(ON) = 22mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired.


    Original     		CEP3120/CEB3120 O-220 O-263 CEP3120 CEB3120 cep3120 TRANSISTOR PDF

    CEP3120

    Abstract: ceb3120
    Text: CEP3120/CEB3120 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 40A,RDS ON = 15mΩ @VGS = 10V. RDS(ON) = 22mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired.


    Original     		CEP3120/CEB3120 O-220 O-263 CEP3120 ceb3120 PDF